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1. 发明授权

US4708484A Projection alignment method and apparatus 失效
标题翻译：投影对准方法及装置
公开(公告)号：US4708484A
公开(公告)日：1987-11-24
申请号：US789778
申请日：1985-10-21
申请人： Yoshihiro Komeyama , Yukio Kembo , Asahiro Kuni , Ryuuichi Funatsu , Akira Inagaki , Minoru Ikeda , Keiichi Okamoto
发明人： Yoshihiro Komeyama , Yukio Kembo , Asahiro Kuni , Ryuuichi Funatsu , Akira Inagaki , Minoru Ikeda , Keiichi Okamoto
IPC分类号： G01R31/26 , G03F9/00 , H01L21/30 , G01B11/26
CPC分类号： G03F9/7023 , G03F9/7049 , G03F9/7076
摘要： The present invention relates, in a projection aligner wherein a mask and a wafer are held proximate to one another and wherein a circuit pattern depicted on the mask is transferred onto the wafer, to a method of detecting the respective positions of the mask and the wafer for the relative positioning between the mask and the wafer. To the end of dispensing with the withdrawal of a microscope objective in such a way that the objective of a microscope for detecting the mask and the wafer and projection light, for example, an X-ray, are prevented from interfering, thereby to achieve the enhancement of throughput and to permit the detection of the positions of the mask and the wafer even during projection, the present invention consists in that the objective of the microscope is inclined with respect to a perpendicular to the plane of the mask or the plane of the wafer being a plane to-be-detected, so as not to interfere with the projection light, for example, the X-ray, whereby the circuit pattern can be transferred while the relative positions of the mask and the wafer are being detected.
摘要翻译：本发明涉及一种投影对准器，其中掩模和晶片彼此靠近地保持，并且其中将掩模上描绘的电路图案转印到晶片上，以检测掩模和晶片的相应位置的方法用于掩模和晶片之间的相对定位。以这样的方式分配显微镜物镜的取出的结束，使得防止用于检测掩模和晶片的显微镜和例如X射线的投射光的目的被干扰，从而实现增加吞吐量并且即使在投影期间也能够检测掩模和晶片的位置，本发明的目的在于，显微镜的目的是相对于掩模的平面垂直于或平面的倾斜晶片是要被检测的平面，以便不干涉诸如X射线的投影光，由此可以在检测掩模和晶片的相对位置的同时传输电路图案。

2. 发明授权

US4825453A X-ray exposure apparatus 失效
标题翻译： X射线曝光装置
公开(公告)号：US4825453A
公开(公告)日：1989-04-25
申请号：US788861
申请日：1985-10-17
申请人： Yukio Kembo , Yoshihiro Komeyama , Minoru Ikeda , Akira Inagaki
发明人： Yukio Kembo , Yoshihiro Komeyama , Minoru Ikeda , Akira Inagaki
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30 , G21K5/00
CPC分类号： B82Y10/00 , G03F7/2039 , G03F7/70033 , G03F7/70841 , G03F7/70866
摘要： Disclosed is an X-ray exposure apparatus having a low attenuation chamber supplied with a gas absorbing little X-rays, the low attenuation chamber being interposed between an X-ray source and a mask so that X-rays transmitted through the low attenuation chamber are irradiated on the mask so as to transfer a mask pattern onto a resist on a wafer, the apparatus comprising detecting means for detecting the gas or components mixed in the gas in the low attenuation chamber, control means for controlling a quantity of supply of the gas into the low attenuation chamber in accordance with an output signal of the detecting means, and/or adjusting means for adjusting a quantity of exposure of said X-rays irradiated on the mask in accordance with an output signal of the detecting means.
摘要翻译：公开了一种具有低吸收少量X射线吸收气体的低衰减室的X射线曝光装置，该低衰减室插入在X射线源和掩模之间，使得透过低衰减室的X射线为照射在掩模上以将掩模图案转印到晶片上的抗蚀剂上，该装置包括用于检测混合在低衰减室中的气体中的气体或成分的检测装置，用于控制气体供应量的控制装置根据检测装置的输出信号进入低衰减室，和/或调节装置，用于根据检测装置的输出信号调节照射在掩模上的所述X射线的曝光量。

3. 发明授权

US4777641A Method and apparatus for alignment 失效
标题翻译：对准方法和装置
公开(公告)号：US4777641A
公开(公告)日：1988-10-11
申请号：US918004
申请日：1986-10-14
申请人： Akira Inagaki , Yukio Kembo , Ryuichi Funatsu , Asahiro Kuni , Keiichi Okamoto , Yoshihiro Komeyama
发明人： Akira Inagaki , Yukio Kembo , Ryuichi Funatsu , Asahiro Kuni , Keiichi Okamoto , Yoshihiro Komeyama
IPC分类号： G02B7/00 , G03F9/00 , H01L21/027 , H01L21/30 , H01L21/67 , H01L21/68 , G21K5/00
CPC分类号： G03F9/70
摘要： A method and apparatus for alignment for use in X-ray exposure or the like wherein a mask is provided having a formation of an alignment pattern made up of at least one linear segment formed in a peripheral section of the mask and a wafer is provided having a formation of an alignment pattern formed in a same direction as the alignment pattern of the mask and made up of linear segments. An illuminating arrangement illuminates a light to the mask alignment pattern along a direction inclined to the alignment direction and the mask alignment pattern and the wafer alignment pattern are imaged and transformed into a video signal. An A/D converts the video signal into a digital signal and stores the digital signal in a memory. The digital video signal is read out from the memory and averaged in a mask alignment pattern by removing a shadow portion caused by the mask alignment pattern and additionally averaged in a wafer alignment pattern area with an averaged wafer alignment pattern signal and an averaged wafer alignment pattern signal being provided. Relative displacement between the mask and the wafer is detected from the averaged mask alignment pattern signal and the averaged wafer alignment pattern signal and the mask and wafer are aligned by moving at least one of the mask and wafer so that displacement between the mask and the wafer does not exist.
摘要翻译：一种用于X射线曝光等的对准用的方法和装置，其中提供具有由形成在掩模的周边部分中的至少一个线性部分构成的取向图案的掩模和晶片，其具有：形成与由掩模的对准图形相同的方向形成并由直线段构成的对准图案。照明装置沿着对准方向倾斜的方向照射到掩模对准图案，并且将掩模对准图案和晶片对准图案成像并变换为视频信号。 A / D将视频信号转换为数字信号，并将数字信号存储在存储器中。从存储器中读出数字视频信号，并通过去除由掩模对准图形引起的阴影部分并以平均的晶片对准图案信号和平均的晶片对准图案在晶片对准图案区域中平均化，以掩模对准图案平均化提供信号。从平均的掩模对准图案信号中检测掩模和晶片之间的相对位移，并且通过移动掩模和晶片中的至少一个来对准平均的晶片对准图案信号并且掩模和晶片，使得掩模和晶片之间的位移不存在。

4. 发明授权

US4666291A Light-exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4666291A
公开(公告)日：1987-05-19
申请号：US852729
申请日：1986-04-16
申请人： Motoya Taniguchi , Asahiro Kuni , Ryuichi Funatsu , Yukio Kembo , Akira Inagaki
发明人： Motoya Taniguchi , Asahiro Kuni , Ryuichi Funatsu , Yukio Kembo , Akira Inagaki
IPC分类号： H01L51/00 , G03F7/20 , G03F9/00 , G03B27/68
CPC分类号： G03F9/7053 , G03F7/703 , G03F7/707
摘要： A light-exposure apparatus which can keep uniform the gap between a mask and a wafer and reduce the density of arrangement of vertical movers adapted to deform the wafer to thereby reduce cost and weight of the apparatus. The apparatus has a thin plate deforming mechanism comprising a chuck platen for holding on its top surface the wafer, the bottom surface of the chuck platen being formed with imperforate slits patterned in the form of a grid composed of a plurality of triangular meshes so that the chuck platen may be deformed along bending lines near the triangular meshes, and a plurality of vertical movers for vertically deforming the individual triangular meshes so as to flatten or deform into a desired shape the wafer.
摘要翻译：能够使掩模和晶片之间的间隙保持均匀并且减小适于使晶片变形的垂直移动器的布置密度，从而降低装置的成本和重量的曝光装置。该装置具有薄板变形机构，其包括用于在其顶表面上保持晶片的卡盘台板，卡盘台板的底表面形成为由多个三角形网格构成的网格形式的无孔狭缝，使得卡盘台板可以沿着三角形网格附近的弯曲线变形，并且多个垂直移动器用于使各个三角形网格垂直变形，以使其平坦化或变形成所需形状的晶片。

5. 发明授权

US4803712A X-ray exposure system 失效
标题翻译： X射线曝光系统
公开(公告)号：US4803712A
公开(公告)日：1989-02-07
申请号：US4880
申请日：1987-01-20
申请人： Yukio Kembo , Minoru Ikeda , Motoya Taniguchi
发明人： Yukio Kembo , Minoru Ikeda , Motoya Taniguchi
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70691 , G03F7/709
摘要： An X-ray exposure system includes a frame set on the floor; an X-ray source fixedly provided in the central portion of the upper part of the frame; a mask-wafer alignment means comprising a wafer at a fixed distance from a mask, an X-Y table mounted with the wafer holder, a mask holder for holding the mask, and an alignment detecting means for detecting the alignment of the alignment pattern of the mask and that of the wafer; vibration isolators for supporting the mask-wafer alignment means so that vibrations do not propagate to the mask-wafer alignment means; detecting means for detecting the position of the mask-wafer alignment means with respect to three-dimensional directions relative to the X-ray source; an arithmetic means for calculating an exposure error of a dislocation of a mask pattern exposure on the wafer, on the basis of position data obtained by the detecting means; and correcting means for correcting the exposure error calculated by the arithmetic means.
摘要翻译： X射线曝光系统包括设置在地板上的框架; 固定地设置在所述框架的上部的中心部分的X射线源; 掩模晶片对准装置，其包括距离掩模固定距离的晶片，安装有晶片保持器的XY工作台，用于保持掩模的掩模支架，以及用于检测掩模的对准图案的对准的对准检测装置和晶片的; 用于支撑掩模 - 晶片对准装置的振动隔离器，使得振动不传播到掩模 - 晶片对准装置; 检测装置，用于相对于X射线源相对于三维方向检测掩模晶片对准装置的位置; 用于根据由检测装置获得的位置数据计算晶片上的掩模图案曝光的位错的曝光误差的算术装置; 以及校正装置，用于校正由算术装置计算出的曝光误差。

6. 发明授权

US4852133A X-ray lithography apparatus 失效
标题翻译： X射线光刻设备
公开(公告)号：US4852133A
公开(公告)日：1989-07-25
申请号：US117499
申请日：1987-11-06
申请人： Minoru Ikeda , Ryuichi Funatsu , Yukio Kembo , Motoya Taniguchi
发明人： Minoru Ikeda , Ryuichi Funatsu , Yukio Kembo , Motoya Taniguchi
IPC分类号： H01L21/027 , G03F7/20 , H01L21/30
CPC分类号： G03F7/70866 , G03F7/70875 , G03F7/70933
摘要： An X-ray lithography apparatus for transferring a pattern formed in a mask onto a wafer by using a soft X-ray. The apparatus comprises a soft X-ray generating unit, a gas chamber connected to an X-ray exit window of the soft X-ray generating unit and filled with a gaseous medium having a high transmittivity to the X-ray, the mask being mounted within the gas chamber, a stage for positioning the wafer in opposition to the mask with a small gap therebetween, detecting optics disposed within the gas chamber for optically picking up image of alignment patterns of the mask and wafer, an imager disposed within the gas chamber for converting the image of the alignment pattern picked up by the detecting optics into a video signal, a discharging port for withdrawing from the gas chamber the gaseous medium present in the vicinity of the imager, a combination of a blower and a heat exchanged for cooling and circulating the gaseous medium withdrawn through the gas discharging port, and a charging port for feeding back to the gas chamber the gaseous medium conditioned and circulated by the blower and the heat exchanger. The discharge port, blower and heat exchanger and the charging port cooperate to prevent the temperature of the gaseous medium within the gas chamber from being increased due to heat generated by the imager means to thereby suppress drift phenomenon in the detecting optics.
摘要翻译：一种X射线光刻设备，用于通过使用软X射线将形成在掩模中的图案转印到晶片上。该装置包括软X射线产生单元，连接到软X射线产生单元的X射线出射窗的气室，并且填充有对X射线具有高透射率的气体介质，所述掩模被安装在气室内设有用于将晶片定位成与掩模相对的掩模的台阶，其间检测设置在气室内的光学拾取掩模和晶片的对准图案的图像;设置在气室内的成像器用于将由检测光学元件拾取的对准图案的图像转换为视频信号;排出口，用于从气室中取出存在于成像器附近的气态介质，鼓风机和换热器的组合并且循环通过气体排出口排出的气体介质，以及用于将由鼓风机调节和循环的气体介质反馈给气室的充气口，在交换器。排气口，鼓风机和热交换器以及充气口配合，以防止气体室内气态介质的温度由于成像器装置产生的热量而增加，从而抑制检测光学元件中的漂移现象。

7. 发明授权

US4475223A Exposure process and system 失效
标题翻译：曝光过程和系统
公开(公告)号：US4475223A
公开(公告)日：1984-10-02
申请号：US387206
申请日：1982-06-10
申请人： Motoya Taniguchi , Mitsuyoshi Koizumi , Nobuyuki Akiyama , Yukio Kembo , Minoru Ikeda
发明人： Motoya Taniguchi , Mitsuyoshi Koizumi , Nobuyuki Akiyama , Yukio Kembo , Minoru Ikeda
IPC分类号： H01L21/027 , G03B27/02 , G03F7/20 , G03F7/207 , G03F9/00 , G03F9/02 , G21K5/00
CPC分类号： G03F7/707 , G03F7/20 , G03F7/703 , G03F9/703 , G03F9/7034
摘要： An X ray exposure process and system for transferring a mask pattern onto a wafer with use of X rays, wherein heights on the mask at many points are measured on a light interference band basis by a mask-height measuring device of non-contact measurement type at an X ray exposure position, the mask being mounted on a chamber which is filled with a He gas and or the like to prevent attenuation of an X ray source, heights on the wafer at many points are measured at a wafer-height measuring position different from said exposure position, and according to the measured results, the wafer is finely moved upwardly or downwardly (that is, deformed) individually independently by means of a chuck which sucks and holds the wafer at many points thereon so that, a gap between the mask and wafer is adjusted to a desired level.
摘要翻译： X射线曝光处理和系统，用于使用X射线将掩模图案转印到晶片上，其中通过非接触测量型的掩模高度测量装置在光干涉条带下测量许多点上的掩模上的高度在X射线曝光位置，掩模被安装在填充有He气体等的室中以防止X射线源的衰减，在晶片高度测量位置处测量许多点上的晶片上的高度与所述曝光位置不同，并且根据测量结果，通过在其上的许多点吸附并保持晶片的卡盘，晶片被独立地独立地向上或向下（即变形）精细地移动，使得晶片之间的间隙掩模和晶片被调节到期望的水平。

8. 发明申请

US20080087820A1 PROBE CONTROL METHOD FOR SCANNING PROBE MICROSCOPE 审中-公开
标题翻译：用于扫描探针显微镜的探测控制方法
公开(公告)号：US20080087820A1
公开(公告)日：2008-04-17
申请号：US11867476
申请日：2007-10-04
申请人： Toru KURENUMA , Hiroaki Yanagimoto , Yukio Kembo , Yuichi Kunitomo , Takafumi Morimoto , Satoshi Sekino
发明人： Toru KURENUMA , Hiroaki Yanagimoto , Yukio Kembo , Yuichi Kunitomo , Takafumi Morimoto , Satoshi Sekino
IPC分类号： G01N23/00
CPC分类号： G01Q10/06 , G01Q30/06
摘要： This probe control method is applied to the scanning probe microscope having a probe section with a probe pointed at a sample, a detection section for detecting physical quantity between the sample and the probe, a measurement section for measuring the surface of the sample to obtain the surface information on the basis of the physical quantity when scanning the sample surface by the probe, and a movement mechanism with at least two degree of freedom. The probe control method has steps of moving the probe in a scanning direction different from the contact direction while making the probe come into contact with the sample surface, detecting the torsional state of the probe during the movement of the probe, and adjusting either or both of the rate in the scanning direction and the force in the contact direction on the basis of the detected value obtained by the detection step.
摘要翻译：将该探针控制方法应用于具有探针指向样品的探针部的扫描探针显微镜，用于检测样品与探针之间的物理量的检测部，测定样品表面的测定部，基于通过探针扫描样品表面时的物理量的表面信息，以及具有至少两个自由度的移动机构。探针控制方法具有使探针沿着与接触方向不同的扫描方向移动的步骤，同时使探针与样品表面接触，检测探针移动期间探针的扭转状态，并且调节任一或两者基于通过检测步骤获得的检测值，扫描方向上的速率和接触方向上的力。

9. 发明授权

US07177020B2 Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process 失效
标题翻译：用于分析半导体制造工艺中的外来颗粒的产生状态的方法和装置
公开(公告)号：US07177020B2
公开(公告)日：2007-02-13
申请号：US11128352
申请日：2005-05-13
申请人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
发明人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
IPC分类号： G01J3/00
CPC分类号： H01L21/681 , B82Y15/00 , G01N21/94 , G01N21/9501 , G01N21/95623 , G01N2021/8822 , G01R31/308 , H01J37/00 , H01J2237/022 , H01J2237/0225 , H01L21/67253 , H01L21/67288 , H01L22/12
摘要： An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a detection optical unit which detects light from the specimen illuminated by the laser with an image sensor while the table is moving, and a signal processor. The signal processor processes a signal outputted from the image sensor of the detection optical unit and converted to a digital signal and extracts defects of the specimen by comparing the converted digital signal with a reference digital signal. A display unit displays information of defects extracted by the signal processor.
摘要翻译：用于检测试样缺陷的装置和方法包括照射光学单元，其将激光倾斜地突出到在一个方向上在一个方向上比在横向方向上更长的区域，安装样本的台单元，可移动的检测光学单元，检测光学单元，其在桌子移动时利用图像传感器检测由激光照射的样本的光，以及信号处理器。信号处理器处理从检测光学单元的图像传感器输出的信号并转换为数字信号，并通过将转换的数字信号与参考数字信号进行比较来提取样本的缺陷。显示单元显示由信号处理器提取的缺陷的信息。

10. 发明授权

US07037735B2 Apparatus and method for testing defects 失效
公开(公告)号：US07037735B2
公开(公告)日：2006-05-02
申请号：US10170378
申请日：2002-06-14
申请人： Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Shunichi Matsumoto , Yukio Kembo , Ryouji Matsunaga , Keiji Sakai , Takanori Ninomiya , Tetsuya Watanabe , Hisato Nakamura , Takahiro Jingu , Yoshio Morishige , Shuichi Chikamatsu
发明人： Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Shunichi Matsumoto , Yukio Kembo , Ryouji Matsunaga , Keiji Sakai , Takanori Ninomiya , Tetsuya Watanabe , Hisato Nakamura , Takahiro Jingu , Yoshio Morishige , Shuichi Chikamatsu
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： B82Y15/00 , G01N21/94 , G01N21/95623 , G01N21/95684 , G01N2021/8822 , G01R31/308 , H01J37/00 , H01J2237/022 , H01J2237/0225 , H01L21/67253 , H01L21/67288 , H01L21/681 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A defect inspection method includes radiating an illumination slit-shaped beam having lights substantially parallel to a longitudinal direction to a substrate having circuit patterns in a direction inclined at a predetermined gradient relative to the direction of a line normal to the substrate and inclined at a predetermined gradient on a surface with respect to a group of main straight lines of the circuit patterns with its longitudinal direction oriented almost perpendicularly to a direction of a movement of the substrate. Scattered light reflected by a defect such as a foreign particle existing on the illuminated substrate is received and converted into a detection signal by using an image sensor, and defect judging is effected of an extracted a signal indicating a defect such as a foreign particle on the basis of the detection signal output.

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