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1. 发明授权

US5387545A Impurity diffusion method 失效
标题翻译：杂质扩散法
公开(公告)号：US5387545A
公开(公告)日：1995-02-07
申请号：US805969
申请日：1991-12-12
申请人： Yukihiro Kiyota , Tohru Nakamura , Takahiro Onai , Taroh Inada
发明人： Yukihiro Kiyota , Tohru Nakamura , Takahiro Onai , Taroh Inada
IPC分类号： H01L21/22 , C30B31/06 , H01L21/225 , H01L21/331 , H01L29/73 , H01L21/223
CPC分类号： H01L29/66272 , C30B31/06 , H01L21/2254 , Y10S148/017
摘要： An impurity diffusion method which can control a surface atomic concentration from a low to a high surface atomic concentration with a good uniformity is provided. Natural oxide is removed from the surface of a semiconductor substrate with a deoxidizing atmosphere gas as a diffusion atmosphere gas in advance, and then an impurity gas is passed thereto, while passing the deoxidizing atmosphere gas thereto, thereby conducting the diffusion. Flow rate or concentration of impurity of the impurity gas is so set that the impurity atomic concentration of the diffusion layer can be controlled by the flow rate or the concentration of impurity of the impurity gas. The impurity atomic concentration of the diffusion layer can be controlled by adjusting the flow rate or concentration of impurity of the impurity gas, and a diffusion layer having a low impurity atomic concentration can be formed. A shallow junction having a depth of not more than 50 nm can be formed.
摘要翻译：提供了能够以均匀性良好地控制表面原子浓度从低到高表面原子浓度的杂质扩散方法。预先用脱氧气氛气体作为扩散气氛气体从半导体衬底的表面除去天然氧化物，然后在通过脱氧气氛气体的同时通过杂质气体，从而进行扩散。杂质气体的流量或杂质浓度设定为可以通过杂质气体的流量或杂质浓度来控制扩散层的杂质原子浓度。扩散层的杂质原子浓度可以通过调节杂质气体的杂质浓度的流量或浓度来进行控制，可以形成杂质原子浓度低的扩散层。可以形成深度不大于50nm的浅结。

2. 发明授权

US5430317A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5430317A
公开(公告)日：1995-07-04
申请号：US122663
申请日：1993-09-17
申请人： Takahiro Onai , Katsuyoshi Washio , Tohru Nakamura
发明人： Takahiro Onai , Katsuyoshi Washio , Tohru Nakamura
IPC分类号： H01L21/331 , H01L29/73 , H01L29/732 , H01L27/01 , H01L27/12
CPC分类号： H01L29/66265 , H01L29/7317
摘要： A transistor is formed on a bonded SOI substrate. A collector electrode is connected to the peripheral sides of the collector areas on the insulator. A first insulator of isolation is formed on the peripheral side of the collector electrode. A base electrode is connected to a base area on the first insulator of isolation. Second insulators of isolation are formed on the peripheral side of a base electrode, and emitter electrode is connected to an emitter area by the second insulators of isolation. The connections between the collector electrode and the collector areas, between the base electrode and the base area, and between the emitter electrode and the emitter area are made under the emitter electrode, so the occupation area is small.
摘要翻译：在结合的SOI衬底上形成晶体管。集电极连接到绝缘体上的集电极区域的周边。在集电极的周边形成第一隔离绝缘体。基极连接到第一隔离绝缘体上的基极区域。隔离的第二绝缘体形成在基极的外围侧，并且发射极通过隔离的第二绝缘体连接到发射极区。集电极与集电极区域之间，基极电极与基极区域之间以及发射极和发射极区域之间的连接形成在发射电极的下方，占用面积小。

3. 发明授权

US5598015A Hetero-junction bipolar transistor and semiconductor devices using the same 失效
标题翻译：异质结双极晶体管和使用其的半导体器件
公开(公告)号：US5598015A
公开(公告)日：1997-01-28
申请号：US357342
申请日：1994-12-15
申请人： Tomonori Tanoue , Hiroshi Masuda , Tohru Nakamura , Takahiro Onai , Katsuyoshi Washio
发明人： Tomonori Tanoue , Hiroshi Masuda , Tohru Nakamura , Takahiro Onai , Katsuyoshi Washio
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737 , H01L31/0328 , H01L27/082 , H01L31/0336
CPC分类号： H01L29/66318 , H01L29/7371
摘要： A hetero-junction bipolar transistor having an emitter composed of a semiconductor having a wider forbidden band width than that of a semiconductor constituting a base is disclosed. In the transistor, the emitter and the electrode leader area composed of a single crystalline semiconductor are provided being extended from the upper part of the emitter to the surface of the base through an insulating layer, for the purpose of making it possible to miniaturize the transistor and to operate the transistor at a high-speed by decreasing the emitter resistance.
摘要翻译：公开了一种异质结双极晶体管，其具有由具有比构成基极的半导体宽的禁带宽度的半导体构成的发射极。在晶体管中，由单晶半导体构成的发射极和电极引出区域通过绝缘层从发射极的上部延伸到基底的表面，以便使晶体管小型化并通过降低发射极电阻来高速运行晶体管。

4. 发明授权

US5109263A Semiconductor device with optimal distance between emitter and trench isolation 失效
标题翻译：具有发射极和沟槽隔离之间最佳距离的半导体器件
公开(公告)号：US5109263A
公开(公告)日：1992-04-28
申请号：US556365
申请日：1990-07-24
申请人： Mitsuo Nanba , Tohru Nakamura , Kazuo Nakazato , Takeo Shiba , Katsuyoshi Washio , Kiyoji Ikeda , Takahiro Onai , Masatada Horiuchi
发明人： Mitsuo Nanba , Tohru Nakamura , Kazuo Nakazato , Takeo Shiba , Katsuyoshi Washio , Kiyoji Ikeda , Takahiro Onai , Masatada Horiuchi
IPC分类号： H01L21/331 , H01L21/762 , H01L29/08 , H01L29/10 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/76229 , H01L29/0804 , H01L29/1004 , H01L29/732
摘要： A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.
摘要翻译：发射极和隔离区域之间的距离保持在由发射极深度和基底宽度（即，基底在深度方向上的厚度）确定的范围内的垂直双极晶体管布置。这样可以防止发射器的载波被捕获到内部，从而防止截止频率的下降。

5. 发明授权

US5424575A Semiconductor device for SOI structure having lead conductor suitable for fine patterning 失效
标题翻译：具有用于精细图案化的引线导体的SOI结构的半导体器件
公开(公告)号：US5424575A
公开(公告)日：1995-06-13
申请号：US890787
申请日：1992-06-01
申请人： Katsuyoshi Washio , Tohru Nakamura , Takahiro Onai , Masatada Horiuchi , Takashi Uchino
发明人： Katsuyoshi Washio , Tohru Nakamura , Takahiro Onai , Masatada Horiuchi , Takashi Uchino
IPC分类号： H01L21/331 , H01L27/12 , H01L29/06 , H01L29/73 , H01L29/72
CPC分类号： H01L29/7317 , H01L27/1203 , H01L29/0692
摘要： A semiconductor device has an electrically insulating substrate and a semiconductor layer formed on the insulating substrate. A plurality of semiconductor regions are defined so as to be joined to each other to form at least two homojunctions in the semiconductor layer. A lead conductor for one of the semiconductor regions which is required to have a small thickness has a specific structure such that the lead conductor is in contact with the one semiconductor region at the main surface of the semiconductor layer for electrical connection therebetween and extends over that portion of the semiconductor layer which contributes to definition of at least one of the semiconductor regions other than the first-mentioned one semiconductor region.
摘要翻译：半导体器件具有形成在绝缘基板上的电绝缘基板和半导体层。多个半导体区域被定义为彼此接合以在半导体层中形成至少两个同态。需要具有小厚度的半导体区域之一的引线导体具有特定结构，使得引线导体与半导体层的主表面处的一个半导体区域接触，以在其间进行电连接，并延伸超过该半导体区域部分半导体层有助于定义除了前述一个半导体区域以外的半导体区域中的至少一个。

6. 发明授权

US4926235A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4926235A
公开(公告)日：1990-05-15
申请号：US106861
申请日：1987-10-13
申请人： Yoichi Tamaki , Tokuo Kure , Tohru Nakamura , Tetsuya Hayashida , Kiyoji Ikeda , Katsuyoshi Washio , Takahiro Onai , Akihisa Uchida , Kunihiko Watanabe
发明人： Yoichi Tamaki , Tokuo Kure , Tohru Nakamura , Tetsuya Hayashida , Kiyoji Ikeda , Katsuyoshi Washio , Takahiro Onai , Akihisa Uchida , Kunihiko Watanabe
IPC分类号： H01L21/285 , H01L21/763 , H01L29/423
CPC分类号： H01L21/763 , H01L21/28525 , H01L29/42304
摘要： A semiconductor device is disclosed, which includes bipolar transistor each having an emitter, base and collector formed inside each protruding portion of a semiconductor substrate, and trenches for device isolation. The bipolar transistor and the trench are spaced apart from each other by a predetermined spacing. According to this arrangement, the width of a base contact becomes uniform and any change of transistor characteristics can be prevented effectively.
摘要翻译：公开了一种半导体器件，其包括双极晶体管，每个双极晶体管具有形成在半导体衬底的每个突出部分内的发射极，基极和集电极以及用于器件隔离的沟槽。双极晶体管和沟槽彼此隔开预定间隔。根据这种布置，基极接触的宽度变得均匀，并且可以有效地防止晶体管特性的任何变化。

7. 发明授权

US5324983A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5324983A
公开(公告)日：1994-06-28
申请号：US902592
申请日：1992-06-22
申请人： Takahiro Onai , Takeo Shiba , Tohru Nakamura , Yoichi Tamaki , Katsuyoshi Washio , Kazuhiro Ohnishi , Masayoshi Saitoh
发明人： Takahiro Onai , Takeo Shiba , Tohru Nakamura , Yoichi Tamaki , Katsuyoshi Washio , Kazuhiro Ohnishi , Masayoshi Saitoh
IPC分类号： H01L21/28 , H01L21/331 , H01L29/423 , H01L29/73 , H01L29/732 , H01L27/082 , H01L27/102 , H01L29/00
CPC分类号： H01L29/66272 , H01L29/42304
摘要： A first region of a first conductivity type is formed in the surface of a semiconductor body, and second and third regions of a second conductivity type are formed on and under, respectively, of the first region. An electrode region formed on a first insulating film formed on the semiconductor body is connected electrically to the first region. The electrode region is defined as having an elongated first part an upper surface of which is connected to an electrode, and having a second, different part which has a substantially constant width and which width is substantially equal to the thickness of the first portion of the electrode region. A metal silicide film is formed over the upper surface of the first portion of the electrode region. The first, second and third regions can be base, emitter and collector regions, respectively, of a bipolar transistor formed in an island region of an epitaxially grown layer on a semiconductor substrate.
摘要翻译：第一导电类型的第一区域形成在半导体本体的表面中，并且第二导电类型的第二和第三区域分别形成在第一区域的上下。形成在形成在半导体主体上的第一绝缘膜上的电极区域与第一区域电连接。电极区域被限定为具有细长的第一部分，其上表面连接到电极，并且具有第二不同部分，其具有基本恒定的宽度，并且该宽度基本上等于第一部分的厚度电极区域。在电极区域的第一部分的上表面上形成金属硅化物膜。第一，第二和第三区域可以分别是形成在半导体衬底上的外延生长层的岛区中的双极晶体管的基极，发射极和集电极区域。

8. 发明授权

US5237200A Semiconductor bipolar transistor with concentric regions 失效
标题翻译：具有同心区域的半导体双极晶体管
公开(公告)号：US5237200A
公开(公告)日：1993-08-17
申请号：US833759
申请日：1992-02-11
申请人： Mitsuo Nanba , Tohru Nakamura , Nakazato Kazuo , Takeo Shiba , Katsuyoshi Washio , Kiyoji Ikeda , Takahiro Onai , Masatada Horiuchi
发明人： Mitsuo Nanba , Tohru Nakamura , Nakazato Kazuo , Takeo Shiba , Katsuyoshi Washio , Kiyoji Ikeda , Takahiro Onai , Masatada Horiuchi
IPC分类号： H01L21/285 , H01L21/331 , H01L21/762 , H01L29/08 , H01L29/10 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/28525 , H01L21/76229 , H01L29/0804 , H01L29/1004 , H01L29/732
摘要： A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.
摘要翻译：发射极和隔离区域之间的距离保持在由发射极深度和基底宽度（即，基底在深度方向上的厚度）确定的范围内的垂直双极晶体管布置。这样可以防止发射器的载波被捕获到内部，从而防止截止频率的下降。

9. 发明授权

US09254243B2 Drug transferring needle and drug transferring method 有权
标题翻译：药物转移针和药物转移方法
公开(公告)号：US09254243B2
公开(公告)日：2016-02-09
申请号：US14008808
申请日：2012-03-14
申请人： Akira Higuchi , Akinobu Okuda , Akihiro Ohta , Yuki Takenaka , Tohru Nakamura
发明人： Akira Higuchi , Akinobu Okuda , Akihiro Ohta , Yuki Takenaka , Tohru Nakamura
IPC分类号： A61J1/20 , A61M5/162
CPC分类号： A61J1/2096 , A61M5/162
摘要： A drug transferring needle includes a needle base portion, a first needle portion having therein an air passage, and a second needle portion longer than the first needle portion and arranged parallel to the first needle portion. In the first needle portion, a first air vent being one end of the air passage is provided on a distal end side of the second needle portion from a second air vent being the other end of the air passage. In the second needle portion, one end of a liquid passage is connected to the inside of the needle base portion, and the other end thereof is a liquid pass opening of the second needle portion. The second needle portion has a distal end having the liquid pass opening, a base portion connected to the needle base portion, and an intermediate portion connecting the distal end and the base portion.
摘要翻译：药物传送针包括针基部，其中具有空气通道的第一针部分和比第一针部长并且平行于第一针部分布置的第二针部分。在第一针部中，作为空气通路的另一端的第二排气口在第二针部的前端侧设置有作为空气通路一端的第一排气口。在第二针部中，液体通路的一端与针基部的内侧连接，另一端为第二针部的液体通过口。第二针部具有具有液体通过口的远端，与针基部连接的基部，以及连接前端和基部的中间部。

10. 发明授权

US08950776B2 Wheelchair and bed 有权
标题翻译：轮椅和床
公开(公告)号：US08950776B2
公开(公告)日：2015-02-10
申请号：US13498692
申请日：2011-06-20
申请人： Shohei Tsukada , Yohei Kume , Hideo Kawakami , Tohru Nakamura , Toshihide Ueda
发明人： Shohei Tsukada , Yohei Kume , Hideo Kawakami , Tohru Nakamura , Toshihide Ueda
IPC分类号： A61G7/16 , A61G5/00 , A61G5/10
CPC分类号： A61G5/006 , A61G5/1089 , A61G7/16 , A61G7/165
摘要： In a bed including a wheelchair and a bed main body portion, the wheelchair has a seating bottom portion composed of bendably coupling a plurality of divided members. A chair bottom support member supports the seating bottom portion, the chair bottom support member changing a shape of a leg bottom part in conjunction with inclination of a back bottom part. A chair base portion fixes the chair bottom support member. Front casters are provided in the chair base portion, the front casters being capable of freely changing direction. Both side wheel bottom support members are axially supported on the chair base portion. Rear casters are provided at one end of the both side wheel bottom support members, the rear casters being capable of freely changing direction. Traveling wheels are provided at the other end of both side wheel bottom support members, whose traveling direction is fixed to a straight-moving direction. Caster links couple parts of the both side wheel bottom support members on the side of the rear casters and the back bottom part of the chair bottom support member.
摘要翻译：在包括轮椅和床主体部分的床上，轮椅具有由可弯曲地联接多个分开的构件的座椅底部构成。座椅底部支撑构件支撑座椅底部部分，椅子底部支撑构件结合后部底部的倾斜度改变腿部底部部分的形状。座椅基部固定椅子底部支撑构件。前脚轮设置在椅基部上，前脚轮能够自由地改变方向。两个侧轮底部支撑构件轴向地支撑在椅子基部上。后脚轮设置在两个侧轮底部支撑构件的一端，后脚轮能够自由地改变方向。在两侧轮底部支撑构件的另一端设置行进轮，行进方向固定在直线方向上。脚轮将后脚轮侧的两个侧轮底部支撑构件的一部分连接到椅子底部支撑构件的后部底部。

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