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1. 发明授权

US5387545A Impurity diffusion method 失效
标题翻译：杂质扩散法
公开(公告)号：US5387545A
公开(公告)日：1995-02-07
申请号：US805969
申请日：1991-12-12
申请人： Yukihiro Kiyota , Tohru Nakamura , Takahiro Onai , Taroh Inada
发明人： Yukihiro Kiyota , Tohru Nakamura , Takahiro Onai , Taroh Inada
IPC分类号： H01L21/22 , C30B31/06 , H01L21/225 , H01L21/331 , H01L29/73 , H01L21/223
CPC分类号： H01L29/66272 , C30B31/06 , H01L21/2254 , Y10S148/017
摘要： An impurity diffusion method which can control a surface atomic concentration from a low to a high surface atomic concentration with a good uniformity is provided. Natural oxide is removed from the surface of a semiconductor substrate with a deoxidizing atmosphere gas as a diffusion atmosphere gas in advance, and then an impurity gas is passed thereto, while passing the deoxidizing atmosphere gas thereto, thereby conducting the diffusion. Flow rate or concentration of impurity of the impurity gas is so set that the impurity atomic concentration of the diffusion layer can be controlled by the flow rate or the concentration of impurity of the impurity gas. The impurity atomic concentration of the diffusion layer can be controlled by adjusting the flow rate or concentration of impurity of the impurity gas, and a diffusion layer having a low impurity atomic concentration can be formed. A shallow junction having a depth of not more than 50 nm can be formed.
摘要翻译：提供了能够以均匀性良好地控制表面原子浓度从低到高表面原子浓度的杂质扩散方法。预先用脱氧气氛气体作为扩散气氛气体从半导体衬底的表面除去天然氧化物，然后在通过脱氧气氛气体的同时通过杂质气体，从而进行扩散。杂质气体的流量或杂质浓度设定为可以通过杂质气体的流量或杂质浓度来控制扩散层的杂质原子浓度。扩散层的杂质原子浓度可以通过调节杂质气体的杂质浓度的流量或浓度来进行控制，可以形成杂质原子浓度低的扩散层。可以形成深度不大于50nm的浅结。

2. 发明授权

US08466990B2 Imaging apparatus and method, electronic device, and program 有权
标题翻译：成像设备和方法，电子设备和程序
公开(公告)号：US08466990B2
公开(公告)日：2013-06-18
申请号：US12805520
申请日：2010-08-04
申请人： Kazuki Nomoto , Akihiro Nakamura , Takashi Kubodera , Kaneyoshi Takeshita , Yukihiro Kiyota
发明人： Kazuki Nomoto , Akihiro Nakamura , Takashi Kubodera , Kaneyoshi Takeshita , Yukihiro Kiyota
IPC分类号： H04N5/217 , H04N5/228 , H04N9/64 , H04N3/14 , H04N5/335
CPC分类号： H04N5/3675
摘要： An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.
摘要翻译：一种成像装置，包括：成像单元，被配置为使用成像装置对图像进行成像; 图像获取单元，被配置为获得由所述成像单元成像的等于黑暗时间的多个图像; 注册单元，被配置为用图像获取单元获得的图像登记像素的输出值改变以超过预定阈值的像素的地址和变化量; 以及校正单元，被配置为基于通过所述处理对象像素的输出值的差异与所述处理对象像素的输出值的差异来对所述处理对象像素的像素值进行比较，当对应于由所述登记单元登记的地址的像素作为处理对象像素时，处理对象像素的周边像素和处理对象像素的变化量。

3. 发明申请

US20110234830A1 Solid-state image pickup device, method of manufacturing thereof, and electronic apparatus 审中-公开
标题翻译：固态图像拾取装置，其制造方法和电子装置
公开(公告)号：US20110234830A1
公开(公告)日：2011-09-29
申请号：US12929688
申请日：2011-02-09
申请人： Yukihiro Kiyota , Keiji Mabuchi
发明人： Yukihiro Kiyota , Keiji Mabuchi
IPC分类号： H04N5/228 , H04N5/335 , H01L31/18
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14612 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H04N5/369 , H04N5/378
摘要： Provided is a solid-state image pickup device including: a plurality of pixels, each of which includes a photoelectric conversion portion and a pixel transistor formed in a front surface side of a substrate, wherein a rear surface side of the substrate is set as a light receiving plane of the photoelectric conversion portion; and an element, which becomes a passive element or an active element, which is disposed in the front surface side of the substrate so as to be superimposed on the photoelectric conversion portion.
摘要翻译：本发明提供一种固体摄像装置，其特征在于，包括：多个像素，每个像素包括形成在基板的正面侧的光电转换部和像素晶体管，所述基板的背面侧被设定为光电转换部的光接收面; 以及成为无源元件或有源元件的元件，其被配置在基板的前表面侧，以便叠加在光电转换部分上。

4. 发明申请

US20110102648A1 Imaging Apparatus and method, electronic device, and program 有权
标题翻译：成像设备和方法，电子设备和程序
公开(公告)号：US20110102648A1
公开(公告)日：2011-05-05
申请号：US12805520
申请日：2010-08-04
申请人： Kazuki Nomoto , Akihiro Nakamura , Takashi Kubodera , Kaneyoshi Takeshita , Yukihiro Kiyota
发明人： Kazuki Nomoto , Akihiro Nakamura , Takashi Kubodera , Kaneyoshi Takeshita , Yukihiro Kiyota
IPC分类号： H04N9/64
CPC分类号： H04N5/3675
摘要： An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.
摘要翻译：一种成像装置，包括：成像单元，被配置为使用成像装置对图像进行成像; 图像获取单元，被配置为获得由所述成像单元成像的等于黑暗时间的多个图像; 注册单元，被配置为用图像获取单元获得的图像登记像素的输出值改变以超过预定阈值的像素的地址和变化量; 以及校正单元，被配置为基于通过所述处理对象像素的输出值的差异与所述处理对象像素的输出值的差异来对所述处理对象像素的像素值进行比较，当对应于由所述登记单元登记的地址的像素作为处理对象像素时，处理对象像素的周边像素和处理对象像素的变化量。

5. 发明授权

US06605512B2 Manufacturing method of a semiconductor device 有权
公开(公告)号：US06605512B2
公开(公告)日：2003-08-12
申请号：US10026841
申请日：2001-12-27
申请人： Yukihiro Kiyota
发明人： Yukihiro Kiyota
IPC分类号： H01L21336
CPC分类号： G01N21/956 , G01N21/211 , H01L22/12
摘要： The invention provides a non-destructive inspection method for a selectively grown film and a manufacturing method of a semiconductor device for providing a simple and convenient process control and throughput improvement. The method comprises forming a pattern in which selectively grown areas are closely arranged on a wafer for manufacturing an LSI, determining the film thickness and the composition of the selectively grown layer by analyzing optical constant data for the entire pattern, and feeding back the result to the next batch thereby conducting process control.

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