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1. 发明申请

US20110176570A1 Semiconductor light emitting device 有权
公开(公告)号：US20110176570A1
公开(公告)日：2011-07-21
申请号：US13064337
申请日：2011-03-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/20
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

2. 发明授权

US07965750B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07965750B2
公开(公告)日：2011-06-21
申请号：US12385811
申请日：2009-04-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00 , H01S3/094
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.
摘要翻译：半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电类型的第一接触层，第一导电类型的第一接触层导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

3. 发明申请

US20110064109A1 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US20110064109A1
公开(公告)日：2011-03-17
申请号：US12805876
申请日：2010-08-23
申请人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
发明人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
IPC分类号： H01S5/323 , H01S5/00 , H01S5/183
CPC分类号： H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S2301/173
摘要： A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.
摘要翻译：提供了能够防止电流变窄层分离的激光二极管。激光二极管包括依次具有第一多层膜反射器，有源层和第二多层膜反射器的台面，并且具有用于使注入有源层的电流变窄的电流变窄层和与该有源层相邻的缓冲层目前缩窄层。通过氧化含有Al的第一氧化层形成电流变窄层。通过氧化选择材料和厚度的第二氧化层使得氧化速率高于第一多层膜反射器和第二多层膜反射器的氧化速率并且低于第一氧化层的氧化速率而形成缓冲层。缓冲层的厚度为10nm以上。

4. 发明授权

US08514905B2 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US08514905B2
公开(公告)日：2013-08-20
申请号：US12805876
申请日：2010-08-23
申请人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
发明人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S2301/173
摘要： A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.
摘要翻译：提供了能够防止电流变窄层分离的激光二极管。激光二极管包括依次具有第一多层膜反射器，有源层和第二多层膜反射器的台面，并且具有用于使注入到有源层的电流变窄的电流变窄层和与该有源层相邻的缓冲层目前变窄层。通过氧化含有Al的第一氧化层形成电流变窄层。通过氧化选择材料和厚度的第二氧化层使得氧化速率高于第一多层膜反射器和第二多层膜反射器的氧化速率并且低于第一氧化层的氧化速率而形成缓冲层。缓冲层的厚度为10nm以上。

5. 发明授权

US08102890B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08102890B2
公开(公告)日：2012-01-24
申请号：US13064337
申请日：2011-03-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00 , H01S3/091 , H01S3/094
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.
摘要翻译：半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电型第一接触层，第一导电类型的第一接触层导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

6. 发明申请

US20090285253A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20090285253A1
公开(公告)日：2009-11-19
申请号：US12385811
申请日：2009-04-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/20
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.
摘要翻译：半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电型第一接触层，第一导电类型的第一接触层导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

7. 发明授权

US08218596B2 Vertical cavity surface emitting laser and method of manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US08218596B2
公开(公告)日：2012-07-10
申请号：US13317165
申请日：2011-10-12
申请人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
发明人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/18358 , H01S5/2086
摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.
摘要翻译：提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。台面的底部扩展到较低DBR层的顶面。基部是露出多层的端面的非平坦面。由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态裸露。包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

8. 发明授权

US08085827B2 Vertical cavity surface emitting laser and method of manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US08085827B2
公开(公告)日：2011-12-27
申请号：US12379824
申请日：2009-03-03
申请人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
发明人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/18358 , H01S5/2086
摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.
摘要翻译：提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。台面的底部扩展到较低DBR层的顶面。基部是露出多层的端面的非平坦面。由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态裸露。包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

9. 发明申请

US20100046565A1 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US20100046565A1
公开(公告)日：2010-02-25
申请号：US12458962
申请日：2009-07-28
申请人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/183 , H01S5/028
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.
摘要翻译：垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和第二多层反射镜，或第二多层反射镜。在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

10. 发明授权

US08290009B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08290009B2
公开(公告)日：2012-10-16
申请号：US12458962
申请日：2009-07-28
申请人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.
摘要翻译：垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和第二多层反射镜，或第二多层反射镜。在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

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