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    • 7. 发明授权
    • Vertical cavity surface emitting laser
    • 垂直腔表面发射激光
    • US08290009B2
    • 2012-10-16
    • US12458962
    • 2009-07-28
    • Yuji MasuiTakahiro ArakidaRintaro KodaOsamu MaedaTomoyuki OkiNaoki Jogan
    • Yuji MasuiTakahiro ArakidaRintaro KodaOsamu MaedaTomoyuki OkiNaoki Jogan
    • H01S5/00
    • H01S5/18336H01S5/0655H01S5/18311H01S5/18316H01S5/18358H01S2301/166
    • A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.
    • 垂直腔表面发射激光器包括层叠结构,其包括在基板上的横向模式调整层,第一多层反射镜,具有发光区域的有源层和第二多层反射镜,从 并且包括电流限制层,其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域,在有源层和 第二多层反射镜,或第二多层反射镜。 在横模调整层中,与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。
    • 8. 发明授权
    • Vertical cavity surface emitting laser
    • 垂直腔表面发射激光
    • US08218594B2
    • 2012-07-10
    • US12458754
    • 2009-07-22
    • Osamu MaedaYuji MasuiMasaki ShiozakiTakahiro ArakidaTakayuki Kawasumi
    • Osamu MaedaYuji MasuiMasaki ShiozakiTakahiro ArakidaTakayuki Kawasumi
    • H01S5/00
    • H01S5/18327H01S5/02461H01S5/1221H01S5/18311H01S5/18358H01S5/18391H01S2301/166H01S2304/02H01S2304/04
    • The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer film reflector have a laminated structure in which reflectance of oscillation wavelength λx is almost constant without depending on temperature change. The active layer is made of a material with which a maximum gain is obtained at temperature higher than ambient temperature. The reflectance adjustment layer has a laminated structure in which difference ΔR(=Rx−Ry) between reflectance Rx of a region opposed to a central region of the light emission region and reflectance Ry of a region opposed to an outer edge region of the light emission region is increased associated with temperature increase from ambient temperature to high temperature.
    • 本发明提供一种垂直腔表面发射激光器,包括:第一多层膜反射器; 具有发光区域的有源层; 第二多层膜反射器; 和反射率调整层。 第一多层膜反射器和第二多层膜反射器具有振荡波长λx的反射率几乎恒定而不依赖于温度变化的层叠结构。 有源层由在高于环境温度的温度下获得最大增益的材料制成。 反射率调整层具有层叠结构,其中与发光区域的中心区域相对的区域的反射率Rx与与发光区域的外边缘区域相对的区域的反射率Ry之间的差Dgr R(= Rx-Ry) 发光区域随温度从环境温度升高到高温而增加。
    • 9. 发明授权
    • Vertical cavity surface emitting laser
    • 垂直腔表面发射激光
    • US08077752B2
    • 2011-12-13
    • US12318421
    • 2008-12-29
    • Osamu MaedaMasaki ShiozakiTakahiro Arakida
    • Osamu MaedaMasaki ShiozakiTakahiro Arakida
    • H01S5/00
    • H01S5/18394H01S5/0425H01S5/18311H01S5/18327H01S5/18347H01S5/18358H01S2301/166H01S2301/176
    • A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.
    • 提供了能够提供高输出基本横模的垂直腔面发射激光器(VCSEL),同时防止高阶横模的振荡。 VCSEL包括形成在半导体层上的包括有源层和电流限制层的半导体层和横向模式调整部。 电流限制层具有电流注入区域和电流限制区域。 横模调整部具有高反射面积和低反射面积。 高反射率区域形成在包括与电流注入区域的中心点相对的第一相对区域的区域中。 高反射率区域的中心点布置在与第一相对区域不同的区域中。 在与电流注入区域相对的相对区域中,在没有形成高反射率区域的区域中形成低反射率区域。