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1. 发明申请

US20110019709A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110019709A1
公开(公告)日：2011-01-27
申请号：US12805029
申请日：2010-07-08
申请人： Yuji Masui , Takahiro Arakida , Naoki Jogan , Rintaro Koda , Kouichi Kondo
发明人： Yuji Masui , Takahiro Arakida , Naoki Jogan , Rintaro Koda , Kouichi Kondo
IPC分类号： H01S5/02 , H01L33/62 , H01L31/02
CPC分类号： H01S5/0425 , H01L24/24 , H01L33/385 , H01L33/62 , H01L2924/12041 , H01L2924/12043 , H01L2924/14 , H01S5/18311 , H01S5/18347 , H01S5/423 , H01L2924/00
摘要： The present invention provides a method of manufacturing a semiconductor device realizing improved yield. The semiconductor device includes: a substrate having a top face, an under face, and side faces; an optical function unit formed on the top face; a plurality of electrode pads formed on the under face; and a wiring formed on at least the side face and electrically connecting the optical function unit and at least one of the plurality of electrode pads.
摘要翻译：本发明提供一种制造实现提高产量的半导体器件的方法。半导体器件包括：具有顶面，底面和侧面的基板; 形成在上表面上的光学功能单元; 形成在下表面上的多个电极焊盘; 以及形成在至少所述侧面上并且电连接所述光学功能单元和所述多个电极焊盘中的至少一个的布线。

2. 发明申请

US20110007769A1 LASER DIODE 审中-公开
标题翻译：激光二极管
公开(公告)号：US20110007769A1
公开(公告)日：2011-01-13
申请号：US12824377
申请日：2010-06-28
申请人： Yuji Masui , Osamu Maeda , Rintaro Koda , Takahiro Arakida , Naoki Jogan , Kouichi Kondo
发明人： Yuji Masui , Osamu Maeda , Rintaro Koda , Takahiro Arakida , Naoki Jogan , Kouichi Kondo
IPC分类号： H01S5/10 , H01S5/00
CPC分类号： H01S5/18316 , H01S5/18311 , H01S5/18333 , H01S5/18358 , H01S5/2022 , H01S2301/166
摘要： A laser diode includes: a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order; and a first oxide narrowing layer and a second oxide narrowing layer. The first oxide narrowing layer is formed close to the active layer, in comparison with the second oxide narrowing layer, includes a first unoxidized region in a middle region in a plane, and includes a first oxidized region on a periphery of the first unoxidized region. The second oxide narrowing layer includes, in a region facing the first unoxidized region, a second unoxidized region having a diameter smaller than that of the first unoxidized region, includes a third unoxidized region in a region not facing the first unoxidized region, and includes a second oxidized region on a periphery of the second unoxidized region and the third unoxidized region.
摘要翻译：激光二极管包括：第一多层膜反射镜，有源层和第二多层膜反射镜; 以及第一氧化物变窄层和第二氧化物变窄层。与第二氧化物变窄层相比，第一氧化物变窄层靠近有源层形成，在平面中的中间区域包括第一未氧化区域，并且在第一未氧化区域的周围包括第一氧化区域。所述第二氧化物变窄层在面向所述第一未氧化区域的区域中包括直径小于所述第一未氧化区域的直径的第二未氧化区域，在不面向所述第一未氧化区域的区域中包含第三未氧化区域，第二未氧化区域的周边上的第二氧化区域和第三未氧化区域。

3. 发明授权

US08218596B2 Vertical cavity surface emitting laser and method of manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US08218596B2
公开(公告)日：2012-07-10
申请号：US13317165
申请日：2011-10-12
申请人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
发明人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/18358 , H01S5/2086
摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.
摘要翻译：提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。台面的底部扩展到较低DBR层的顶面。基部是露出多层的端面的非平坦面。由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态裸露。包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

4. 发明申请

US20120009704A1 Vertical cavity surface emitting laser and method of manufacturing thereof 审中-公开
标题翻译：垂直腔面发射激光器及其制造方法
公开(公告)号：US20120009704A1
公开(公告)日：2012-01-12
申请号：US13137851
申请日：2011-09-19
申请人： Yuji Masui , Takahiro Arakida , Terukazu Naruse , Rintaro Koda , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Terukazu Naruse , Rintaro Koda , Naoki Jogan
IPC分类号： H01L33/60
CPC分类号： H01S5/18344 , H01S5/06226 , H01S5/18311 , H01S5/1835
摘要： A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.
摘要翻译：提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形第二多层反射器的截面积。

5. 发明授权

US08085827B2 Vertical cavity surface emitting laser and method of manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US08085827B2
公开(公告)日：2011-12-27
申请号：US12379824
申请日：2009-03-03
申请人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
发明人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/18358 , H01S5/2086
摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.
摘要翻译：提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。台面的底部扩展到较低DBR层的顶面。基部是露出多层的端面的非平坦面。由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态裸露。包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

6. 发明申请

US20110176570A1 Semiconductor light emitting device 有权
公开(公告)号：US20110176570A1
公开(公告)日：2011-07-21
申请号：US13064337
申请日：2011-03-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/20
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

7. 发明申请

US20100200868A1 Semiconductor Light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20100200868A1
公开(公告)日：2010-08-12
申请号：US12657809
申请日：2010-01-28
申请人： Yuji Masui , Rintaro Koda , Osamu Maeda , Takahiro Arakida , Terukazu Naruse , Naoki Jogan
发明人： Yuji Masui , Rintaro Koda , Osamu Maeda , Takahiro Arakida , Terukazu Naruse , Naoki Jogan
IPC分类号： H01L33/00
CPC分类号： H01S5/0264
摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.
摘要翻译：半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 设置在所述半导体发光元件和所述半导体光检测元件之间的透明基板; 第一金属层，其在包括与所述发光区域相对的区域的区域中具有第一开口，并且接合所述半导体发光元件和所述基板; 以及第二金属层，其在包括与发光区域相对的区域的区域中具有第二开口，并且接合半导体光检测元件和基板。

8. 发明申请

US20100046565A1 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US20100046565A1
公开(公告)日：2010-02-25
申请号：US12458962
申请日：2009-07-28
申请人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/183 , H01S5/028
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.
摘要翻译：垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和第二多层反射镜，或第二多层反射镜。在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

9. 发明授权

US07965750B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07965750B2
公开(公告)日：2011-06-21
申请号：US12385811
申请日：2009-04-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00 , H01S3/094
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.
摘要翻译：半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电类型的第一接触层，第一导电类型的第一接触层导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

10. 发明申请

US20100193805A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20100193805A1
公开(公告)日：2010-08-05
申请号：US12648706
申请日：2009-12-29
申请人： Naoki JOGAN , Yuji Masui , Rintaro Koda , Takahiro Arakida
发明人： Naoki JOGAN , Yuji Masui , Rintaro Koda , Takahiro Arakida
IPC分类号： H01L33/00 , H01L31/02
CPC分类号： H01S5/0264 , H01S5/0215 , H01S5/0217 , H01S5/18311
摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; and an insulating oxidized layer disposed between the semiconductor light-emitting element and the semiconductor light-detecting element.
摘要翻译：半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 以及设置在半导体发光元件和半导体光检测元件之间的绝缘氧化层。

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