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1. 发明授权

US07122839B2 Semiconductor light emitting devices with graded composition light emitting layers 有权
标题翻译：具有渐变成分发光层的半导体发光器件
公开(公告)号：US07122839B2
公开(公告)日：2006-10-17
申请号：US10977867
申请日：2004-10-29
申请人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
发明人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3205 , H01S5/34333
摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.
摘要翻译：半导体发光器件中的III族氮化物发光层具有渐变组成。发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。在发光层中的分级可以减少与发光层中的极化场相关的问题。发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

2. 发明申请

US20090261361A1 III-NITRIDE LIGHT EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT EMMITTING REGION 有权
标题翻译：具有双重结构光照射区域的III型氮化物发光装置
公开(公告)号：US20090261361A1
公开(公告)日：2009-10-22
申请号：US12495464
申请日：2009-06-30
申请人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
发明人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
摘要翻译： III族氮化物发光层设置在双异质结构中的n型区域和p型区域之间。 III族氮化物发光层的至少一部分具有渐变组成。

3. 发明授权

US08847252B2 III-nitride light emitting device with double heterostructure light emitting region 有权
标题翻译：具有双异质结构发光区域的III族氮化物发光器件
公开(公告)号：US08847252B2
公开(公告)日：2014-09-30
申请号：US12495464
申请日：2009-06-30
申请人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
发明人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/32 , H01L33/04 , H01L33/06
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
摘要翻译： III族氮化物发光层设置在双异质结构中的n型区域和p型区域之间。 III族氮化物发光层的至少一部分具有渐变组成。

4. 发明授权

US06995389B2 Heterostructures for III-nitride light emitting devices 有权
标题翻译： III族氮化物发光器件的异质结构
公开(公告)号：US06995389B2
公开(公告)日：2006-02-07
申请号：US10465775
申请日：2003-06-18
申请人： James C. Kim , Nathan F. Gardner , Michael R. Krames , Yu-Chen Shen , Troy A. Trottier , Jonathan J. Wierer, Jr.
发明人： James C. Kim , Nathan F. Gardner , Michael R. Krames , Yu-Chen Shen , Troy A. Trottier , Jonathan J. Wierer, Jr.
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/3425 , H01S5/343 , H01S5/34333 , H01S5/34346
摘要： Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer and quantum well layer in the active region of a light emitting device. In some embodiments, the reservoir layer is thicker than the barrier layer and quantum well layer, and has a greater indium composition than the barrier layer and a smaller indium composition than the quantum well layer. In some embodiments, the reservoir layer is graded. In a second embodiment, the active region of a light emitting device is a superlattice of alternating quantum well layers and barrier layers. In some embodiments, the barrier layers are thin such that charge carriers can tunnel between quantum well layers through a barrier layer.
摘要翻译：公开了异质结构设计，其可以增加III族氮化物发光器件（例如发光二极管）的有源区的量子阱层中可用的电荷载体的数量。在第一实施例中，存储层包括在发光器件的有源区中的势垒层和量子阱层。在一些实施例中，储存层比阻挡层和量子阱层厚，并且具有比阻挡层更大的铟组成和比量子阱层更小的铟组成。在一些实施例中，储层被分级。在第二实施例中，发光器件的有源区是交替的量子阱层和阻挡层的超晶格。在一些实施例中，阻挡层是薄的，使得电荷载流子可以通过势垒层在量子阱层之间隧穿。

5. 发明授权

US07880186B2 III-nitride light emitting device with double heterostructure light emitting region 有权
标题翻译：具有双异质结构发光区域的III族氮化物发光器件
公开(公告)号：US07880186B2
公开(公告)日：2011-02-01
申请号：US11682276
申请日：2007-03-05
申请人： Nathan F. Gardner , Gangyi Chen , Werner K. Goetz , Michael R. Krames , Gerd O. Mueller , Yu-Chen Shen , Satoshi Watanabe
发明人： Nathan F. Gardner , Gangyi Chen , Werner K. Goetz , Michael R. Krames , Gerd O. Mueller , Yu-Chen Shen , Satoshi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm−3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要翻译：在器件中，III族氮化物发光层设置在n型区域和p型区域之间。设置在n型区域和发光层之间的第一间隔层被掺杂到6×10 18 cm -3和5×10 19 cm -3之间的掺杂剂浓度。设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到小于6×10 18 cm -3的掺杂剂浓度。

6. 发明授权

US07221000B2 Reverse polarization light emitting region for a semiconductor light emitting device 有权
标题翻译：用于半导体发光器件的反向偏振发光区域
公开(公告)号：US07221000B2
公开(公告)日：2007-05-22
申请号：US11226185
申请日：2005-09-13
申请人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
发明人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
IPC分类号： H01L29/22
CPC分类号： H01L33/32 , H01L33/16
摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.
摘要翻译：半导体发光器件包括设置在n型区域和p型区域之间的发光层。发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

7. 发明授权

US06903376B2 Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction 有权
标题翻译：在用于改进光提取的倒装芯片发光二极管中选择性地放置量子阱
公开(公告)号：US06903376B2
公开(公告)日：2005-06-07
申请号：US10158360
申请日：2002-05-29
申请人： Yu-Chen Shen , Michael R. Krames , Michael J. Ludowise
发明人： Yu-Chen Shen , Michael R. Krames , Michael J. Ludowise
IPC分类号： H01L27/15 , H01L33/02 , H01L33/08 , H01L33/38 , H01L33/40 , H01L33/52 , H01L33/56 , H01L33/62 , H01L33/64 , H01L29/267
CPC分类号： H01L33/405 , G09G2360/148 , H01L27/156 , H01L33/025 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/52 , H01L33/56 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/051 , H01L2224/05572 , H01L2224/056 , H01L2224/16 , H01L2924/01019 , H01L2924/01025 , H01L2924/01046 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12041 , H01L2924/00014
摘要： In accordance with embodiments of the invention, a light emitting device includes a light emitting region and a reflective contact separated from the light emitting region by one or more layers. In a first embodiment, the separation between the light emitting region and the reflective contact is between about 0.5λn and about 0.9λn, where λn is the wavelength of radiation emitted from the light emitting region in an area of the device separating the light emitting region and the reflective contact. In a second embodiment, the separation between the light emitting region and the reflective contact is between about λn and about 1.4λn. The light emitting region may be, for example, III-nitride, III-phosphide, or any other suitable material.
摘要翻译：根据本发明的实施例，发光器件包括发光区域和从发光区域分离一层或多层的反射接触。在第一实施例中，发光区域和反射接触件之间的间隔在约0.5λ至约0.9λ之间，其中λ< SUB>是在分离发光区域和反射接触的器件的区域中从发光区域发射的辐射的波长。在第二实施例中，发光区域和反射接触件之间的间隔在约λλ至约1.4λ之间。发光区域可以是例如III族氮化物，III-磷化物或任何其它合适的材料。

8. 发明申请

US20160177439A1 SPUTTER TOOL 审中-公开
标题翻译：飞溅工具
公开(公告)号：US20160177439A1
公开(公告)日：2016-06-23
申请号：US14578332
申请日：2014-12-19
申请人： Yu-Chen Shen , Taiqing Qiu , Robe Woehl , Kieran Mark Tracy , Mukul Agrawal
发明人： Yu-Chen Shen , Taiqing Qiu , Robe Woehl , Kieran Mark Tracy , Mukul Agrawal
IPC分类号： C23C14/50 , C23C14/34
CPC分类号： C23C14/50 , C23C14/165 , C23C14/34 , C23C14/3464 , H01J37/32715
摘要： Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.
摘要翻译：描述了溅射工具。在一个实施例中，用于支撑晶片的装置包括具有用于接收晶片的凹陷的托盘。托盘包括在凹陷下方的开口，并且凹陷中的边缘将晶片支撑在开口上。盖子至少部分地覆盖开口。在一个示例中，盖可以是具有一个或多个孔的板，并且管可以位于盖中的每个孔下方。在一个实施例中，晶片处理系统包括处理室和具有凹陷的托盘以接收晶片。托盘在凹陷下方具有开口，并且凹陷中的边缘将晶片支撑在开口上方。在一个这样的实施例中，盖至少部分地覆盖开口。根据一个实施例，能量吸收材料设置在托盘中的开口下方。

9. 发明授权

US09054255B2 Solar cell having an emitter region with wide bandgap semiconductor material 有权
标题翻译：太阳能电池具有宽带隙半导体材料的发射极区域
公开(公告)号：US09054255B2
公开(公告)日：2015-06-09
申请号：US13429138
申请日：2012-03-23
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L21/00 , H01L31/0747 , H01L31/068 , H01L31/072 , H01L31/0745
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
摘要翻译：描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。在一个示例中，一种方法包括在具有受控气氛的处理工具中形成在太阳能电池的半导体衬底的表面上的薄介电层。半导体衬底具有带隙。在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

10. 发明申请

US20130223493A1 SIGNAL TRANSITION DETECTION CIRCUIT AND METHOD OF THE SAME 有权
标题翻译：信号转换检测电路及其方法
公开(公告)号：US20130223493A1
公开(公告)日：2013-08-29
申请号：US13454352
申请日：2012-04-24
申请人： Yu-Chen Shen , Kuei-Chang Yang
发明人： Yu-Chen Shen , Kuei-Chang Yang
IPC分类号： H04B17/00
CPC分类号： H04L1/24
摘要： A signal transition detection circuit is provided. The signal transition detection circuit comprises a counter module, a DAC, a comparator and a digital sampling module. The counter module generates a digital step signal. The DAC converts the digital step signal into an analog input signal and transmits it to an under-test circuit such that the under-test circuit generates an output signal transiting from a first stable level to a second stable level, wherein a transition section is located between the first and the second stable level. The comparator receives and compares the output signal with a default value to generate a normalized output signal. The digital sampling module samples the normalized output signal to retrieve impulses such that when the number of the impulses is accumulated to be larger than a reference value, a corresponding step of the digital step signal is determined to be a transition point.
摘要翻译：提供了一种信号转换检测电路。信号转换检测电路包括计数器模块，DAC，比较器和数字采样模块。计数器模块产生数字步进信号。 DAC将数字步进信号转换为模拟输入信号并将其发送到未被测试的电路，使得欠测试电路产生从第一稳定电平转移到第二稳定电平的输出信号，其中过渡部分位于在第一和第二稳定水平之间。比较器接收并比较输出信号与默认值，以产生归一化的输出信号。数字采样模块对归一化的输出信号进行采样以取回脉冲，使得当脉冲数被累积到大于参考值时，数字步进信号的相应步骤被确定为转变点。

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