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1. 发明申请

US20150171265A1 QUANTUM EFFICIENCY OF MULTIPLE QUANTUM WELLS 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US20150171265A1
公开(公告)日：2015-06-18
申请号：US14629487
申请日：2015-02-23
申请人： Invensas Corporation
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L33/00 , H01L33/32 , H01L33/62 , H01L33/06
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

2. 发明申请

US20060091404A1 Semiconductor light emitting devices with graded compositon light emitting layers 有权
标题翻译：具有分级组合发光层的半导体发光器件
公开(公告)号：US20060091404A1
公开(公告)日：2006-05-04
申请号：US10977867
申请日：2004-10-29
申请人： Yu-Chen Shen , Michael Krames , Nathan Gardner
发明人： Yu-Chen Shen , Michael Krames , Nathan Gardner
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3205 , H01S5/34333
摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1-xN, AlxGa1-xN, or InxAlyGa1-x-yN.
摘要翻译：半导体发光器件中的III族氮化物发光层具有渐变组成。发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。在发光层中的分级可以减少与发光层中的极化场相关的问题。发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

3. 发明授权

US07122839B2 Semiconductor light emitting devices with graded composition light emitting layers 有权
标题翻译：具有渐变成分发光层的半导体发光器件
公开(公告)号：US07122839B2
公开(公告)日：2006-10-17
申请号：US10977867
申请日：2004-10-29
申请人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
发明人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3205 , H01S5/34333
摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.
摘要翻译：半导体发光器件中的III族氮化物发光层具有渐变组成。发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。在发光层中的分级可以减少与发光层中的极化场相关的问题。发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

4. 发明授权

US5883911A Surface-emitting laser device 失效
标题翻译：表面发射激光器件
公开(公告)号：US5883911A
公开(公告)日：1999-03-16
申请号：US742160
申请日：1996-11-01
申请人： Bun Lee , Jong-Hyeob Baek , Sung-Woo Choi , Jin-Hong Lee
发明人： Bun Lee , Jong-Hyeob Baek , Sung-Woo Choi , Jin-Hong Lee
IPC分类号： H01S3/00 , H01S5/183 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S2301/173 , H01S5/1053 , H01S5/18319 , H01S5/3205 , H01S5/3215 , H01S5/3406 , H01S5/34313
摘要： An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an In.sub.x Ga.sub.1-x As thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the In.sub.x Ga.sub.1-x As grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the In.sub.x Ga.sub.1-x As thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.
摘要翻译：由于使用具有期望晶格率的薄膜材料生长的电位使用非常小部分的活化层，并且由此产生连续振荡，因此改进的表面发射激光器件可以容易地改变发光波长通过使用具有高反射率的反射器在室温下进行。因此，增加了包括GaAs衬底的光学特性; 在GaAs衬底上由反射率为1的多层AlAs / GaAs异质薄膜形成下反射体; 在下反射器上由下反射器形成的齿形分级层和在组成分级方法中具有大晶格率的In x Ga 1-x As薄膜; 在In x Ga 1-x As分级层上形成一个齿形的InGaAs分级阱，作为In组成减少而不是分级层; 在In x Ga 1-x As薄膜上形成缓冲层，由晶格键合的InP形成; 并且在缓冲层上的反射率为1的InAlAs / InAlGaAs异质薄膜的多层上形成上半导体反射器，其中从其表面发射激光束。

5. 发明申请

US20170330996A1 SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR CHIP 审中-公开
公开(公告)号：US20170330996A1
公开(公告)日：2017-11-16
申请号：US15594519
申请日：2017-05-12
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alfred LELL , Andreas LOEFFLER , Christoph EICHLER , Bernhard STOJETZ , Andre SOMERS
IPC分类号： H01L33/00 , H01S5/32 , H01L33/32 , H01L21/67 , H01S5/323 , H01L33/62
CPC分类号： H01L33/0025 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/26 , H01L33/32 , H01L33/62 , H01S5/026 , H01S5/1082 , H01S5/2036 , H01S5/2219 , H01S5/222 , H01S5/227 , H01S5/3205 , H01S5/32341 , H01S5/4031 , H01S2301/176 , H01S2301/18
摘要： A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

6. 发明授权

US08975616B2 Quantum efficiency of multiple quantum wells 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US08975616B2
公开(公告)日：2015-03-10
申请号：US13541559
申请日：2012-07-03
申请人： Liang Wang , Ilyas Mohammed , Masud Beroz
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L29/06 , H01L31/00 , H01L33/06 , H01L31/0352 , H01L31/105 , H01L33/24 , H01S5/20 , H01S5/34 , H01S5/343 , H01S5/32
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

7. 发明申请

US20050040386A1 Multiple quantum well broad spectrum gain medium and method for forming same 审中-公开
标题翻译：多量子阱广谱增益介质及其形成方法
公开(公告)号：US20050040386A1
公开(公告)日：2005-02-24
申请号：US10478778
申请日：2002-02-20
申请人： Fow-Sen Choa
发明人： Fow-Sen Choa
IPC分类号： H01L29/06 , H01L29/24 , H01L31/0328 , H01S5/00 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/005 , H01S5/1057 , H01S5/106 , H01S5/141 , H01S5/2077 , H01S5/227 , H01S5/3202 , H01S5/3205 , H01S5/34 , H01S5/34313 , H01S5/34373 , H01S5/4043 , H01S2304/04
摘要： A broadband medium (100) for a laser (300) having multiple quantum wells (130).
摘要翻译：一种用于具有多个量子阱（130）的激光器（300）的宽带介质（100）。

8. 发明授权

US11876349B2 Semiconductor device, semiconductor laser, and method of producing a semiconductor device 有权
公开(公告)号：US11876349B2
公开(公告)日：2024-01-16
申请号：US17401735
申请日：2021-08-13
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Masahiro Murayama
IPC分类号： H01S5/042 , H01S5/22 , H01S5/20 , H01S5/32 , H01L31/0224
CPC分类号： H01S5/22 , H01S5/04253 , H01S5/2059 , H01S5/321 , H01S5/3205 , H01L31/022491
摘要： To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of not less than 90% and not more than 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge on a surface of the ridge on which the transparent conductive layer is formed, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

9. 发明授权

US09583671B2 Quantum efficiency of multiple quantum wells 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US09583671B2
公开(公告)日：2017-02-28
申请号：US14629487
申请日：2015-02-23
申请人： Invensas Corporation
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L21/00 , H01L33/00 , H01L33/06 , H01L31/0352 , H01L31/105 , B82Y20/00 , H01L33/32 , H01L33/62 , H01L29/06 , H01L31/00 , H01L33/24 , H01S5/20 , H01S5/34 , H01S5/343 , H01S5/32
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

10. 发明申请

US20140008607A1 QUANTUM EFFICIENCY OF MULTIPLE QUANTUM WELLS 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US20140008607A1
公开(公告)日：2014-01-09
申请号：US13541559
申请日：2012-07-03
申请人： Liang Wang , Ilyas Mohammed , Masud Beroz
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L33/06
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

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