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1. 发明申请

US20150171265A1 QUANTUM EFFICIENCY OF MULTIPLE QUANTUM WELLS 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US20150171265A1
公开(公告)日：2015-06-18
申请号：US14629487
申请日：2015-02-23
申请人： Invensas Corporation
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L33/00 , H01L33/32 , H01L33/62 , H01L33/06
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

2. 发明申请

US20060091404A1 Semiconductor light emitting devices with graded compositon light emitting layers 有权
标题翻译：具有分级组合发光层的半导体发光器件
公开(公告)号：US20060091404A1
公开(公告)日：2006-05-04
申请号：US10977867
申请日：2004-10-29
申请人： Yu-Chen Shen , Michael Krames , Nathan Gardner
发明人： Yu-Chen Shen , Michael Krames , Nathan Gardner
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3205 , H01S5/34333
摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1-xN, AlxGa1-xN, or InxAlyGa1-x-yN.
摘要翻译：半导体发光器件中的III族氮化物发光层具有渐变组成。发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。在发光层中的分级可以减少与发光层中的极化场相关的问题。发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

3. 发明授权

US07122839B2 Semiconductor light emitting devices with graded composition light emitting layers 有权
标题翻译：具有渐变成分发光层的半导体发光器件
公开(公告)号：US07122839B2
公开(公告)日：2006-10-17
申请号：US10977867
申请日：2004-10-29
申请人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
发明人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3205 , H01S5/34333
摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.
摘要翻译：半导体发光器件中的III族氮化物发光层具有渐变组成。发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。在发光层中的分级可以减少与发光层中的极化场相关的问题。发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

4. 发明授权

US5883911A Surface-emitting laser device 失效
标题翻译：表面发射激光器件
公开(公告)号：US5883911A
公开(公告)日：1999-03-16
申请号：US742160
申请日：1996-11-01
申请人： Bun Lee , Jong-Hyeob Baek , Sung-Woo Choi , Jin-Hong Lee
发明人： Bun Lee , Jong-Hyeob Baek , Sung-Woo Choi , Jin-Hong Lee
IPC分类号： H01S3/00 , H01S5/183 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S2301/173 , H01S5/1053 , H01S5/18319 , H01S5/3205 , H01S5/3215 , H01S5/3406 , H01S5/34313
摘要： An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an In.sub.x Ga.sub.1-x As thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the In.sub.x Ga.sub.1-x As grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the In.sub.x Ga.sub.1-x As thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.
摘要翻译：由于使用具有期望晶格率的薄膜材料生长的电位使用非常小部分的活化层，并且由此产生连续振荡，因此改进的表面发射激光器件可以容易地改变发光波长通过使用具有高反射率的反射器在室温下进行。因此，增加了包括GaAs衬底的光学特性; 在GaAs衬底上由反射率为1的多层AlAs / GaAs异质薄膜形成下反射体; 在下反射器上由下反射器形成的齿形分级层和在组成分级方法中具有大晶格率的In x Ga 1-x As薄膜; 在In x Ga 1-x As分级层上形成一个齿形的InGaAs分级阱，作为In组成减少而不是分级层; 在In x Ga 1-x As薄膜上形成缓冲层，由晶格键合的InP形成; 并且在缓冲层上的反射率为1的InAlAs / InAlGaAs异质薄膜的多层上形成上半导体反射器，其中从其表面发射激光束。

5. 发明授权

US09583671B2 Quantum efficiency of multiple quantum wells 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US09583671B2
公开(公告)日：2017-02-28
申请号：US14629487
申请日：2015-02-23
申请人： Invensas Corporation
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L21/00 , H01L33/00 , H01L33/06 , H01L31/0352 , H01L31/105 , B82Y20/00 , H01L33/32 , H01L33/62 , H01L29/06 , H01L31/00 , H01L33/24 , H01S5/20 , H01S5/34 , H01S5/343 , H01S5/32
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

6. 发明申请

US20140008607A1 QUANTUM EFFICIENCY OF MULTIPLE QUANTUM WELLS 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US20140008607A1
公开(公告)日：2014-01-09
申请号：US13541559
申请日：2012-07-03
申请人： Liang Wang , Ilyas Mohammed , Masud Beroz
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L33/06
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

7. 发明授权

US5390209A Article comprising a semiconductor laser that is non-degenerate with regard to polarization 失效
标题翻译：包含相对于极化不退化的半导体激光器的制品
公开(公告)号：US5390209A
公开(公告)日：1995-02-14
申请号：US177503
申请日：1994-01-05
申请人： Daryoosh Vakhshoori
发明人： Daryoosh Vakhshoori
IPC分类号： H01S5/00 , H01S5/183 , H01S5/32 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/18355 , H01S5/3202 , H01S5/3205 , H01S5/3404 , H01S5/3408 , H01S5/342
摘要： The output of vertical cavity surface emitting layers (VC-SELs) generally lacks polarization stability due to polarization mode degeneracity. I have discovered that in the usual (001) laser geometry polarization mode degeneracity can be removed if the active region of the laser is selected such that the active region lacks mirror symmetry with respect to any plane normal to the [001] crystal direction. Exemplarily, the active region comprises one or more asymmetrical quantum wells, e.g., quantum wells having a saw-tooth profile. The invention can also be embodied in edge emitting lasers, but embodiment in VC-SELs is preferred.
摘要翻译：垂直腔表面发射层（VC-SEL）的输出通常由于偏振模态退化而缺乏极化稳定性。我已经发现，在通常的（001）激光几何中，如果选择激光器的有源区域使得有源区域相对于垂直于[001]晶体方向的任何平面没有镜像对称性，则可以去除极化模式退化特性。示例性地，有源区包括一个或多个非对称量子阱，例如具有锯齿轮廓的量子阱。本发明也可以实现在边缘发射激光器中，但VC-SEL中的实施例是优选的。

8. 发明申请

US20170330996A1 SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR CHIP 审中-公开
公开(公告)号：US20170330996A1
公开(公告)日：2017-11-16
申请号：US15594519
申请日：2017-05-12
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alfred LELL , Andreas LOEFFLER , Christoph EICHLER , Bernhard STOJETZ , Andre SOMERS
IPC分类号： H01L33/00 , H01S5/32 , H01L33/32 , H01L21/67 , H01S5/323 , H01L33/62
CPC分类号： H01L33/0025 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/26 , H01L33/32 , H01L33/62 , H01S5/026 , H01S5/1082 , H01S5/2036 , H01S5/2219 , H01S5/222 , H01S5/227 , H01S5/3205 , H01S5/32341 , H01S5/4031 , H01S2301/176 , H01S2301/18
摘要： A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

9. 发明授权

US08975616B2 Quantum efficiency of multiple quantum wells 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US08975616B2
公开(公告)日：2015-03-10
申请号：US13541559
申请日：2012-07-03
申请人： Liang Wang , Ilyas Mohammed , Masud Beroz
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L29/06 , H01L31/00 , H01L33/06 , H01L31/0352 , H01L31/105 , H01L33/24 , H01S5/20 , H01S5/34 , H01S5/343 , H01S5/32
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

10. 发明申请

US20050040386A1 Multiple quantum well broad spectrum gain medium and method for forming same 审中-公开
标题翻译：多量子阱广谱增益介质及其形成方法
公开(公告)号：US20050040386A1
公开(公告)日：2005-02-24
申请号：US10478778
申请日：2002-02-20
申请人： Fow-Sen Choa
发明人： Fow-Sen Choa
IPC分类号： H01L29/06 , H01L29/24 , H01L31/0328 , H01S5/00 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/005 , H01S5/1057 , H01S5/106 , H01S5/141 , H01S5/2077 , H01S5/227 , H01S5/3202 , H01S5/3205 , H01S5/34 , H01S5/34313 , H01S5/34373 , H01S5/4043 , H01S2304/04
摘要： A broadband medium (100) for a laser (300) having multiple quantum wells (130).
摘要翻译：一种用于具有多个量子阱（130）的激光器（300）的宽带介质（100）。

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