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1. 发明授权

US09564854B2 Photonic degradation monitoring for semiconductor devices 有权
标题翻译：半导体器件的光子劣化监测
公开(公告)号：US09564854B2
公开(公告)日：2017-02-07
申请号：US14705268
申请日：2015-05-06
申请人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
发明人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
IPC分类号： G01N21/64 , H02S50/15
CPC分类号： H02S50/15 , G01N21/6408 , G01N21/6489 , G01N2201/06113 , G01N2201/0621
摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
摘要翻译：对半导体测试方法和半导体测试设备进行描述。在一个示例中，用于测试半导体的方法可以包括在半导体上施加光以引起光子降解。该方法还可以包括接收从半导体施加的光引起的光致发光测量，并从光致发光测量监测半导体的光子劣化。

2. 发明申请

US20160329864A1 PHOTONIC DEGRADATION MONITORING FOR SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的光子降解监测
公开(公告)号：US20160329864A1
公开(公告)日：2016-11-10
申请号：US14705268
申请日：2015-05-06
申请人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
发明人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
IPC分类号： H02S50/15 , G01N21/64
CPC分类号： H02S50/15 , G01N21/6408 , G01N21/6489 , G01N2201/06113 , G01N2201/0621
摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
摘要翻译：对半导体测试方法和半导体测试设备进行描述。在一个示例中，用于测试半导体的方法可以包括在半导体上施加光以引起光子降解。该方法还可以包括接收从半导体施加的光引起的光致发光测量，并从光致发光测量监测半导体的光子劣化。

3. 发明申请

US20160071996A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 审中-公开
公开(公告)号：US20160071996A1
公开(公告)日：2016-03-10
申请号：US14945708
申请日：2015-11-19
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0747 , H01L31/0236 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

4. 发明授权

US08767900B2 Signal transition detection circuit and method of the same 有权
标题翻译：信号转换检测电路及其方法相同
公开(公告)号：US08767900B2
公开(公告)日：2014-07-01
申请号：US13454352
申请日：2012-04-24
申请人： Yu-Chen Shen , Kuei-Chang Yang
发明人： Yu-Chen Shen , Kuei-Chang Yang
IPC分类号： H04L7/02
CPC分类号： H04L1/24
摘要： A signal transition detection circuit is provided. The signal transition detection circuit comprises a counter module, a DAC, a comparator and a digital sampling module. The counter module generates a digital step signal. The DAC converts the digital step signal into an analog input signal and transmits it to an under-test circuit such that the under-test circuit generates an output signal transiting from a first stable level to a second stable level, wherein a transition section is located between the first and the second stable level. The comparator receives and compares the output signal with a default value to generate a normalized output signal. The digital sampling module samples the normalized output signal to retrieve impulses such that when the number of the impulses is accumulated to be larger than a reference value, a corresponding step of the digital step signal is determined to be a transition point.
摘要翻译：提供了一种信号转换检测电路。信号转换检测电路包括计数器模块，DAC，比较器和数字采样模块。计数器模块产生数字步进信号。 DAC将数字步进信号转换为模拟输入信号并将其发送到未被测试的电路，使得欠测试电路产生从第一稳定电平转移到第二稳定电平的输出信号，其中过渡部分位于在第一和第二稳定水平之间。比较器接收并比较输出信号与默认值，以产生归一化的输出信号。数字采样模块对归一化的输出信号进行采样以取回脉冲，使得当脉冲数被累积到大于参考值时，数字步进信号的相应步骤被确定为转变点。

5. 发明申请

US20130247965A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 有权
公开(公告)号：US20130247965A1
公开(公告)日：2013-09-26
申请号：US13429138
申请日：2012-03-23
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

6. 发明授权

US07285799B2 Semiconductor light emitting devices including in-plane light emitting layers 有权
标题翻译：包括平面内发光层的半导体发光器件
公开(公告)号：US07285799B2
公开(公告)日：2007-10-23
申请号：US10829141
申请日：2004-04-21
申请人： James C. Kim , Yu-Chen Shen
发明人： James C. Kim , Yu-Chen Shen
IPC分类号： H01L27/15 , H01L29/24
CPC分类号： H01L33/18 , H01L33/02 , H01L33/06 , H01L33/32
摘要： A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a axis roughly parallel to the plane of the layer, referred to as an in-plane light emitting layer. The in-plane light emitting layer may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, the in-plane light emitting layer has a thickness greater than 50 Å.
摘要翻译：半导体发光器件包括具有纤锌矿晶体结构的平面发光层，其具有大致平行于该层平面的<0001>轴，被称为面内发光层。面内发光层可以包括例如{11 20}或{10 10} InGaN发光层。在一些实施例中，面内发光层的厚度大于50。

7. 发明申请

US20070145384A1 III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region 有权
标题翻译：具有双异质结构发光区域的III型氮化物发光器件
公开(公告)号：US20070145384A1
公开(公告)日：2007-06-28
申请号：US11682276
申请日：2007-03-05
申请人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
发明人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要翻译：在器件中，III族氮化物发光层设置在n型区域和p型区域之间。设置在n型区域和发光层之间的第一间隔层被掺杂到掺杂剂浓度为6×10 18 cm -3和5×10 6 19厘米-3 -3。设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到掺杂剂浓度小于6×10 -3 -3 -3倍 >。

8. 发明授权

US07122839B2 Semiconductor light emitting devices with graded composition light emitting layers 有权
标题翻译：具有渐变成分发光层的半导体发光器件
公开(公告)号：US07122839B2
公开(公告)日：2006-10-17
申请号：US10977867
申请日：2004-10-29
申请人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
发明人： Yu-Chen Shen , Michael R. Krames , Nathan F. Gardner
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3205 , H01S5/34333
摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.
摘要翻译：半导体发光器件中的III族氮化物发光层具有渐变组成。发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。在发光层中的分级可以减少与发光层中的极化场相关的问题。发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

9. 发明申请

US20060197100A1 Reverse polarization light emitting region for a semiconductor light emitting device 有权
标题翻译：用于半导体发光器件的反向偏振发光区域
公开(公告)号：US20060197100A1
公开(公告)日：2006-09-07
申请号：US11226185
申请日：2005-09-13
申请人： Yu-Chen Shen , Michael Krames , Nathan Gardner
发明人： Yu-Chen Shen , Michael Krames , Nathan Gardner
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/32 , H01L33/16
摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.
摘要翻译：半导体发光器件包括设置在n型区域和p型区域之间的发光层。发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

10. 发明申请

US20160177439A1 SPUTTER TOOL 审中-公开
标题翻译：飞溅工具
公开(公告)号：US20160177439A1
公开(公告)日：2016-06-23
申请号：US14578332
申请日：2014-12-19
申请人： Yu-Chen Shen , Taiqing Qiu , Robe Woehl , Kieran Mark Tracy , Mukul Agrawal
发明人： Yu-Chen Shen , Taiqing Qiu , Robe Woehl , Kieran Mark Tracy , Mukul Agrawal
IPC分类号： C23C14/50 , C23C14/34
CPC分类号： C23C14/50 , C23C14/165 , C23C14/34 , C23C14/3464 , H01J37/32715
摘要： Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.
摘要翻译：描述了溅射工具。在一个实施例中，用于支撑晶片的装置包括具有用于接收晶片的凹陷的托盘。托盘包括在凹陷下方的开口，并且凹陷中的边缘将晶片支撑在开口上。盖子至少部分地覆盖开口。在一个示例中，盖可以是具有一个或多个孔的板，并且管可以位于盖中的每个孔下方。在一个实施例中，晶片处理系统包括处理室和具有凹陷的托盘以接收晶片。托盘在凹陷下方具有开口，并且凹陷中的边缘将晶片支撑在开口上方。在一个这样的实施例中，盖至少部分地覆盖开口。根据一个实施例，能量吸收材料设置在托盘中的开口下方。

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