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1. 发明公开

US20240039248A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20240039248A1
公开(公告)日：2024-02-01
申请号：US18225855
申请日：2023-07-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： Daisuke INOUE
IPC分类号： H01S5/34 , H01S5/227 , H01S5/343 , H01S5/22
CPC分类号： H01S5/3425 , H01S5/227 , H01S5/3434 , H01S5/34373 , H01S5/2206 , H01S5/2222
摘要： A semiconductor laser device includes a first semiconductor layer and an active layer provided above the first semiconductor layer. The first semiconductor layer is a superlattice layer and includes a plurality of first layers and a plurality of second layers. The plurality first layers and the plurality of second layers are alternately stacked upon each other. Thicknesses of the plurality of first layers are equal to each other, and thicknesses of the plurality of second layers are equal to each other.

2. 发明申请

US20160294161A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：US20160294161A1
公开(公告)日：2016-10-06
申请号：US15182252
申请日：2016-06-14
申请人： Kabushiki Kaisha Toshiba
发明人： Shigeyuki TAKAGI , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fuji , Yasumoto Shiomi
IPC分类号： H01S5/34 , H01S1/00 , H01S5/12 , H01S5/20 , H01S5/343 , H01S5/22
CPC分类号： H01S5/3402 , B82Y20/00 , H01S1/00 , H01S5/12 , H01S5/2022 , H01S5/2031 , H01S5/2054 , H01S5/22 , H01S5/2219 , H01S5/3211 , H01S5/3425 , H01S5/34333 , H01S2301/166 , H01S2301/176
摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.
摘要翻译：半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率低于构成活性层的所有层的折射率。

3. 发明授权

US09407065B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US09407065B2
公开(公告)日：2016-08-02
申请号：US13565008
申请日：2012-08-02
申请人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
发明人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
IPC分类号： H01S5/34 , H01S5/20 , H01S5/22 , B82Y20/00 , H01S5/12 , H01S5/32
CPC分类号： H01S5/3402 , B82Y20/00 , H01S1/00 , H01S5/12 , H01S5/2022 , H01S5/2031 , H01S5/2054 , H01S5/22 , H01S5/2219 , H01S5/3211 , H01S5/3425 , H01S5/34333 , H01S2301/166 , H01S2301/176
摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.
摘要翻译：半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率低于构成活性层的所有层的折射率。

4. 发明申请

US20130301667A1 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20130301667A1
公开(公告)日：2013-11-14
申请号：US13943421
申请日：2013-07-16
申请人： Sony Corporation
发明人： Yoshifumi Sato , Daisuke Imanishi
IPC分类号： H01S5/30 , H01S5/343
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0421 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/32325 , H01S5/3425 , H01S5/343 , H01S5/3436
摘要： This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device includes the laminated structure of an n-AlInP clad layer, a superlattice active layer section, a p-AlInP first clad layer, a GaInP etching stop layer are formed, and on top of that, there are a p-AlInP second clad layer, a GaInP protective layer and a p-GaAs contact layer, which are processed into a stripe-shaped ridge. A p-side electrode is directly coated and formed on the etching stop layer of ridge top surface.
摘要翻译：这提供了一种具有高的电流限制效应，漏电流小，温度特性好的高光输出效率的半导体激光器件，并且表示低阈值电流，并且可以有效地将激光限制在条纹区域，并且在梁剖面中是有利的。该半导体激光器件包括n-AlInP包覆层，超晶格有源层部分，p-AlInP第一覆盖层，GaInP蚀刻停止层的层叠结构，其中存在p-AlInP 第二包层，GaInP保护层和p-GaAs接触层，其被加工成条形脊。 p侧电极被直接涂覆并形成在脊顶表面的蚀刻停止层上。

5. 发明申请

US20130259080A1 ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 有权
标题翻译：通过部分或完全放松的铝氮化镓氮化物层与杂质分离的二氧化氮量子阱中的各向异性应变控制
公开(公告)号：US20130259080A1
公开(公告)日：2013-10-03
申请号：US13904908
申请日：2013-05-29
申请人： The Regents of the University of California
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01L33/12 , H01S5/34 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
摘要翻译：用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛位错，使得有源层中的各向异性应变被下层调制。

6. 发明授权

US07041524B2 Semiconductor laser device and method for fabricating the same 失效
公开(公告)号：US07041524B2
公开(公告)日：2006-05-09
申请号：US10961036
申请日：2004-10-12
申请人： Toshikazu Onishi
发明人： Toshikazu Onishi
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/164 , H01S5/2231 , H01S5/3086 , H01S5/3425 , H01S5/3436
摘要： A semiconductor laser device according to the present invention has a semiconductor substrate having a first region and a second region adjacent to the first region, a first active layer formed on the first region and made of a compound semiconductor, a first clad layer formed on the first active layer and made of a compound semiconductor containing a first dopant, and a second active region formed on the second region and made of a compound semiconductor containing a second dopant having a diffusion coefficient with respect to the first active region which is higher than that of the first dopant.

7. 发明授权

US06987281B2 Group III nitride contact structures for light emitting devices 有权
标题翻译：用于发光器件的III族氮化物接触结构
公开(公告)号：US06987281B2
公开(公告)日：2006-01-17
申请号：US10366053
申请日：2003-02-13
申请人： John Adam Edmond , Kathleen Marie Doverspike , Michael John Bergmann , Hua-Shuang Kong
发明人： John Adam Edmond , Kathleen Marie Doverspike , Michael John Bergmann , Hua-Shuang Kong
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , B82Y20/00 , H01L33/04 , H01S5/0425 , H01S5/32341 , H01S5/3425
摘要： A superlattice contact structure for light emitting devices includes a plurality of contiguous p-type Group III nitride layers. The contact structure may be formed of p-type indium nitride, aluminum indium nitride, or indium gallium nitride. Also disclosed is a light emitting device that incorporates the disclosed contact structures.
摘要翻译：发光器件的超晶格接触结构包括多个邻接的p型III族氮化物层。接触结构可以由p型氮化铟，氮化铟铟或氮化铟镓形成。还公开了结合所公开的接触结构的发光器件。

8. 发明申请

US20050041712A1 Semiconductor laser device and production method therefor 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050041712A1
公开(公告)日：2005-02-24
申请号：US10495865
申请日：2003-09-19
申请人： Yoshifumi Sato , Daisuke Imanishi
发明人： Yoshifumi Sato , Daisuke Imanishi
IPC分类号： H01S5/042 , H01S5/22 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0421 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/32325 , H01S5/3425 , H01S5/343 , H01S5/3436
摘要： This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device (100) includes the laminated structure of an n-AlInP clad layer (103) a superlattice active layer section (104), a p-AlInP first clad layer (105), a GaInP etching stop layer (106) are formed, and on top of that, there are a p-AlInP second clad layer (107), a GaInP protective layer (108) and a p-GaAs contact layer (109), which are processed into a stripe-shaped ridge. A p-side electrode (111) is directly coated and formed on the etching stop layer of ridge top surface, ridge sides and ridge flanks since s the superlattice active layer section is sandwiched between the n-AlInP clad layer and the p-AlInP first clad layer, an energy band gap difference from the active layer section becomes greater.
摘要翻译：这提供了一种具有高的电流限制效应，漏电流小，温度特性好的高光输出效率的半导体激光器件，并且表示低阈值电流，并且可以有效地将激光限制在条纹区域，并且在梁剖面中是有利的。该半导体激光器件（100）包括n-AlInP覆盖层（103），超晶格有源层部分（104），p-AlInP第一覆盖层（105），GaInP蚀刻停止层（106）的叠层结构形成，并且还有一个被加工成条状脊的p-AlInP第二包层（107），GaInP保护层（108）和p-GaAs接触层（109）。 p侧电极（111）直接涂覆并形成在脊顶表面，脊侧和脊脊的蚀刻停止层上，因为超晶格有源层部分夹在n-AlInP包层和p-AlInP第一与有源层部分的能带隙差变大。

9. 发明授权

US06671301B1 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06671301B1
公开(公告)日：2003-12-30
申请号：US09565937
申请日：2000-05-05
申请人： Toshikazu Onishi , Hideto Adachi , Masaya Mannou , Akira Takamori
发明人： Toshikazu Onishi , Hideto Adachi , Masaya Mannou , Akira Takamori
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/2231 , H01S5/3425 , H01S5/34326
摘要： A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2×1018 cm−3.
摘要翻译：一种半导体激光器件，包括：第一导电类型的半导体衬底; 设置在半导体衬底上的第一导电类型的覆层; 设置在所述第一导电类型的包覆层上的有源层，所述有源层具有在至少一个腔端面附近包括无序区域的超晶格结构; 设置在有源层上的第二导电类型的第一包层; 设置在第一包层上的第二导电类型的蚀刻停止层; 以及设置在所述蚀刻停止层上的所述第二导电类型的第二包层，所述第二包层形成脊结构，所述脊结构沿着空腔长度方向延伸并具有预定宽度。在至少一个空腔端面附近的蚀刻停止层中的杂质浓度大于空腔内的杂质的浓度，并且等于或小于约2×10 18 cm -3 >。

10. 发明授权

US06621841B1 Phonon-pumped semiconductor lasers 失效
标题翻译：声子泵浦半导体激光器
公开(公告)号：US06621841B1
公开(公告)日：2003-09-16
申请号：US10132328
申请日：2002-04-23
申请人： Richard A. Soref , Gregory Sun
发明人： Richard A. Soref , Gregory Sun
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S1/00 , H01S5/04 , H01S5/0612 , H01S5/3022 , H01S5/3401 , H01S5/3402 , H01S5/3425
摘要： The first phonon-pumped semiconductor laser. The active region is an unbiased boron-doped Si0.94Ge0.06/Si superlattice with Si0.97Ge0.03 buffer layers embedded in a surface-plasmon strip waveguide. Warm and cool heat sinks create a temperature gradient across the waveguide. A heat buffer layer adjacent to the cool sink reflects optical phonons and transmits acoustic phonons. Within the resonator, the difference in effective temperatures of optical and acoustic phonons provides hole pumping for the lasing transition between the heavy-hole 2 (HH2) and heavy-hole 1(HH1) minibands. A gain of 280/cm at the 5THz emission frequency is predicted for 6×1017/cm3 doping at temperatures of 300K and 77K for optical and acoustic phonons, respectively.
摘要翻译：第一个声子泵浦半导体激光器。有源区是一个无偏硼掺杂的Si0.94Ge0.06 / Si超晶格，Si0.97Ge0.03缓冲层埋在表面等离子体激元条波导中。温暖和凉爽的散热器在波导上产生温度梯度。与冷却水槽相邻的热缓冲层反射光学声子并传输声学声子。在谐振器内，光学和声学声子的有效温度差异为重孔2（HH2）和重孔1（HH1）迷你型之间的激光过渡提供了空穴泵浦。在5THz发射频率下，对于光学和声学声子，在300K和77K的温度下分别预测6×10 17 / cm 3的掺杂增益为280 / cm。

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