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1. 发明授权

US06271069B1 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body 失效
标题翻译：在GaAs基半导体本体上制造包含氧化物层的制品的方法
公开(公告)号：US06271069B1
公开(公告)日：2001-08-07
申请号：US09122558
申请日：1998-07-24
申请人： Young-Kai Chen , Alfred Yi Cho , William Scott Hobson , Minghwei Hong , Jenn-Ming Kuo , Jueinai Raynien Kwo , Donald Winslow Murphy , Fan Ren
发明人： Young-Kai Chen , Alfred Yi Cho , William Scott Hobson , Minghwei Hong , Jenn-Ming Kuo , Jueinai Raynien Kwo , Donald Winslow Murphy , Fan Ren
IPC分类号： H01L2976
CPC分类号： H01L29/517 , C23C14/08 , H01L21/28158 , H01L21/28264 , H01L21/8252 , H01L27/0605 , H01L29/66522 , H01L29/78 , H01L33/44 , H01S5/028
摘要： Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1×1011 cm−2 eV−1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.1.
摘要翻译：公开了制造基于GaAs的增强型MOS-FET的方法以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是没有蚀刻凹槽或外延再生长的平面器件，其栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下至多为1×10 11 cm -2 eV-1）。该方法涉及离子注入，在含As气氛中的注入活化，表面重构和栅极氧化物的原位沉积。在优选的实施方案中，栅极氧化物形成之后的处理步骤在高于300℃的空气中或在高于约700℃的UHV中进行。该方法可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET以及包括MOS-FET和MES-FET的IC。该方法包括沉积总体组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电荷稳定剂元素，x大于或等于零选择z以满足Ga和A基本上完全氧化，y /（x + y）大于0.1的要求。

2. 发明授权

US5821171A Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article 失效
标题翻译：在GaAs系半导体上具有镓层的制品及其制造方法
公开(公告)号：US5821171A
公开(公告)日：1998-10-13
申请号：US408678
申请日：1995-03-22
申请人： Minghwei Hong , Jueinai Raynien Kwo , Joseph Petrus Mannaerts , Matthias Passlack , Fan Ren , George John Zydzik
发明人： Minghwei Hong , Jueinai Raynien Kwo , Joseph Petrus Mannaerts , Matthias Passlack , Fan Ren , George John Zydzik
IPC分类号： C23C14/08 , H01L29/51 , H01L31/04 , H01L33/44 , H01S5/00 , H01S5/028 , H01L21/316
CPC分类号： H01L29/517 , C23C14/08 , H01L33/44 , H01S5/028
摘要： A high quality interface between a GaAs-based semiconductor and a Ga.sub.2 O.sub.3 dielectric an be formed if the semiconductor surface is caused to have less than 1% of a monolayer impurity coverage at completion of the first monolayer of the Ga.sub.2 O.sub.3 on the surface. This is achieved, for instance, by preparing the surface of a GaAs wafer under UHV conditions in a first growth chamber, transferring the wafer through a transfer module under UHV to a second growth chamber that is also under UHV, and growing the dielectric by evaporation of Ga.sub.2 O.sub.3 from a solid source, the process carried out such that the integrated impurity exposure of the surface is at most 100 Langmuirs. Articles according to the invention have low interface state density (
摘要翻译：如果半导体表面在表面上的Ga 2 O 3的第一单层完成时具有小于单层杂质覆盖率的1％，则形成GaAs基半导体和Ga 2 O 3电介质之间的高质量界面。这通过例如通过在第一生长室中在UHV条件下制备GaAs晶片的表面来实现，将晶片通过UHV下的转移模块转移到也在UHV下的第二生长室，并通过蒸发使电介质生长的Ga 2 O 3来自固体源，所述方法进行，使得表面的综合杂质暴露量为至多100兰缪尔。根据本发明的制品具有低界面态密度（<1011 / cm2×Ve）和界面复合速度（<104cm / s）。根据本发明的半导体/ Ga 2 O 3结构可以有利地用于各种电子或光电子器件，例如GaAs基MOS-FET，HBT，太阳能电池上的激光器。

3. 发明授权

US5903037A GaAs-based MOSFET, and method of making same 失效
标题翻译：基于GaAs的MOSFET及其制造方法
公开(公告)号：US5903037A
公开(公告)日：1999-05-11
申请号：US804782
申请日：1997-02-24
申请人： Alfred Yi Cho , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
发明人： Alfred Yi Cho , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
IPC分类号： H01L29/78 , B82B1/00 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/51 , H01L21/316 , H01L23/58
CPC分类号： H01L29/517 , H01L21/28158 , H01L21/28264 , H01L29/66522 , H01L2924/0002
摘要： It has been found that a Ga-oxide-containing layer is substantially not etched in HF solution if the layer is a Ga-Gd-oxide with Gd:Ga atomic ratio of more than about 1:7.5, preferably more than 1:4 or even 1:2. This facilitates removal of a protective dielectric (typically SiO.sub.2) layer after an ohmic contact anneal, with the Ga-Gd-oxide gate oxide layer serving as etch stop and not being adversely affected by contact with the HF etchant. Gd-Ge-oxide also exhibits a composition-dependent etch rate in HCl:H.sub.2 O.
摘要翻译：已经发现，如果该层是Gd:Ga原子比大于约1:7.5，优选大于1:4的Ga-Gd氧化物，则在HF溶液中基本上不蚀刻含Ga氧化物层，或甚至1：2。这有助于在欧姆接触退火之后去除保护性电介质（通常为SiO 2）层，其中Ga-Gd氧化物栅极氧化物层用作蚀刻停止，并且不受与HF蚀刻剂的接触的不利影响。 Gd-Ge-氧化物还表现出在HCl：H 2 O中的组成依赖性蚀刻速率。

4. 发明授权

US5912498A Article comprising an oxide layer on GAN 失效
标题翻译：文章包括GAN上的氧化物层
公开(公告)号：US5912498A
公开(公告)日：1999-06-15
申请号：US948874
申请日：1997-10-10
申请人： William Scott Hobson , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
发明人： William Scott Hobson , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
IPC分类号： H01L29/78 , H01L21/20 , H01L21/28 , H01L21/316 , H01L29/51 , H01L29/786 , H01L29/76
CPC分类号： H01L29/517 , H01L21/28264 , H01L21/31604
摘要： A high quality oxide layer has been formed on a GaN surface by a method that involves preparation of the GaN such that the surface is essentially atomically clean and essentially atomically ordered, and that further involves exposing the surface to evaporant from a GGG (gallium gadolinium garnet) evaporation source. MOS structures comprising the GaN/oxide combination have shown low leakage current, as well as charge accumulation and depletion.
摘要翻译：通过涉及制备GaN的方法，GaN表面上形成高质量的氧化物层，使得表面基本上是原子上清洁的并且基本上是原子排列的，并且进一步包括将表面从GGG（镓钆石榴石）蒸发源。包括GaN /氧化物组合的MOS结构显示出低的漏电流以及电荷累积和耗尽。

5. 发明授权

US5668049A Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur 失效
标题翻译：制造基于GaAs的激光器的方法，其包括具有气相硫的小面涂层
公开(公告)号：US5668049A
公开(公告)日：1997-09-16
申请号：US692834
申请日：1996-07-31
申请人： Utpal Kumar Chakrabarti , William Scott Hobson , Fan Ren , Melinda Lamont Schnoes
发明人： Utpal Kumar Chakrabarti , William Scott Hobson , Fan Ren , Melinda Lamont Schnoes
IPC分类号： H01L33/00 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/223 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0202 , H01S5/0282 , H01S5/223 , H01S5/34313
摘要： In a method of making a GaAs-based semiconductor laser, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H.sub.2 S plasma. Following the exposure, the cleavage facets are coated in the chamber with a protective dielectric (preferably silicon nitride) layer. The method can be practiced with high through-put, and can yield lasers (e.g., 980 nm pump lasers for optical fiber amplifiers) capable of operation at high power.
摘要翻译：在制造基于GaAs的半导体激光器的方法中，完全处理的晶片通常在环境气氛中被切割成激光棒，激光棒被装载到可抽空的沉积室（优选地是ECR CVD室）中并暴露于 H2S等离子体。暴露后，将裂解小面用保护电介质（优选氮化硅）层涂覆在腔室中。该方法可以通过高通量实现，并且可以产生能够在高功率下操作的激光器（例如，用于光纤放大器的980nm泵浦激光器）。

6. 发明申请

US20110117669A1 MATERIALS AND METHODS FOR DETECTING TOXINS, PATHOGENS AND OTHER BIOLOGICAL MATERIALS 审中-公开
标题翻译：用于检测毒素，病原体和其他生物材料的材料和方法
公开(公告)号：US20110117669A1
公开(公告)日：2011-05-19
申请号：US12664022
申请日：2009-11-06
申请人： Fan Ren , Stephen John Pearton , Tanmay Lele
发明人： Fan Ren , Stephen John Pearton , Tanmay Lele
IPC分类号： H01L29/20 , H01L29/737 , G01N33/566
CPC分类号： G01N27/3275 , G01N27/4145 , G01N33/54373 , G01N33/56911 , G01N33/56983 , G01N2333/33
摘要： Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs.
摘要翻译：本发明的实施方案提供可用于检测毒素，病原体和其他生物材料的结合分子官能化的高电子迁移率晶体管（HEMT）。在具体实施方案中，抗体功能化的HEMT可用于检测肉毒杆菌毒素。抗体可以通过固定化的巯基乙酸锚定在HEMT的金层门区。本发明的检测器的实施例可以用于基于AlGaN / GaN HEMT的现场可部署电子生物学应用中。

7. 外观设计

USD530837S1 Fluorescent light tube 有权
标题翻译：荧光灯管
公开(公告)号：USD530837S1
公开(公告)日：2006-10-24
申请号：US29233335
申请日：2005-06-30
申请人： James F. Loughrey , Fan Ren
设计人： James F. Loughrey , Fan Ren

8. 发明申请

US20060213251A1 Carbon nanotube films for hydrogen sensing 审中-公开
标题翻译：用于氢气感测的碳纳米管膜
公开(公告)号：US20060213251A1
公开(公告)日：2006-09-28
申请号：US11089311
申请日：2005-03-24
申请人： Andrew Rinzler , Jennifer Sippel-Oakley , Byoung Kang , Hung-Ta Wang , Fan Ren , Stephen Pearton
发明人： Andrew Rinzler , Jennifer Sippel-Oakley , Byoung Kang , Hung-Ta Wang , Fan Ren , Stephen Pearton
IPC分类号： G01N7/00
CPC分类号： G01N27/127 , G01N33/005
摘要： A multi-layer H2 sensor includes a carbon nanotube layer, and a ultra-thin metal or metal alloy layer in contact with the nanotube layer. The ultra-thin metal or metal alloy layer is preferably from 10 to 50 angstroms thick. An electrical resistance of the layered sensor increases upon exposure to H2 and can provide detection of hydrogen gas (H2) down to at least 10 ppm, The metal or metal alloy layer is preferably selected from the group consisting of Ni, Pd and Pt, or mixtures thereof. Multi-layered sensors and can be conveniently operated at room temperature.
摘要翻译：多层H 2传感器包括碳纳米管层和与纳米管层接触的超薄金属或金属合金层。超薄金属或金属合金层的厚度优选为10〜50埃。层状传感器的电阻在暴露于H 2 2时增加，并且可以将氢气（H 2 O 2）的检测降低至至少10ppm。金属或金属合金层优选选自Ni，Pd和Pt，或其混合物。多层传感器，可方便地在室温下运行。

9. 发明申请

US20110091510A1 NANOROD MATERIALS AND METHODS OF MAKING AND USING SAME 审中-公开
标题翻译：纳米材料及其制备方法和使用方法
公开(公告)号：US20110091510A1
公开(公告)日：2011-04-21
申请号：US12936491
申请日：2009-04-30
申请人： Tanmay P. Lele , Fan Ren , Benjamin George Keselowsky , Jiyeon Lee , Anand Gupte , Byung-Hwan Chu , Karl Zawoy
发明人： Tanmay P. Lele , Fan Ren , Benjamin George Keselowsky , Jiyeon Lee , Anand Gupte , Byung-Hwan Chu , Karl Zawoy
IPC分类号： A61K9/00 , A61K31/727 , A61K38/02 , A61K33/24 , A61K31/407 , C12N5/071 , A61P43/00 , B32B9/00 , C01G9/02 , C01G23/047 , C01B33/02 , C01B21/06 , A61L33/00 , B82Y5/00 , B82Y40/00
CPC分类号： A61K9/00 , A61K31/366 , A61K31/407 , A61K33/24 , A61K38/02 , A61K38/4893 , B82Y5/00 , B82Y30/00 , B82Y40/00 , C01G9/02 , C01G23/047 , C01P2004/03 , C01P2004/16 , C01P2004/62 , C01P2004/64 , C12Y304/24069 , C30B7/10 , C30B29/16 , C30B29/60 , Y10S977/762 , Y10S977/915 , Y10T428/249924 , Y10T428/249925 , Y10T428/24994 , Y10T428/294 , Y10T428/2958 , Y10T428/2964 , Y10T428/298
摘要： The subject invention concerns nanorods, compositions and substrates comprising nanorods, and methods of making and using nanorods and nanorod compositions and substrates. In one embodiment, the nanorod is composed of Zinc oxide (ZnO). In a further embodiment, a nanorod of the invention further comprises SiO2 or TiO2. In a specific embodiment, a nanorod of the invention is composed of ZnO coated with SiO2. Nanorods of the present invention are useful as an adhesion-resistant biomaterial capable of reducing viability in anchorage-dependent cells.
摘要翻译：本发明涉及包含纳米棒的纳米棒，组合物和底物，以及制备和使用纳米棒和纳米棒组合物和底物的方法。在一个实施方案中，纳米棒由氧化锌（ZnO）组成。在另一个实施方案中，本发明的纳米棒还包含SiO 2或TiO 2。在具体实施方案中，本发明的纳米棒由涂覆有SiO 2的ZnO组成。本发明的纳米棒可用作能够降低锚定依赖性细胞活力的耐粘附生物材料。

10. 发明申请

US20110068372A1 SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS 有权
标题翻译：传感器使用高电子移动晶体管
公开(公告)号：US20110068372A1
公开(公告)日：2011-03-24
申请号：US12992002
申请日：2009-03-20
申请人： Fan Ren , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
发明人： Fan Ren , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
IPC分类号： H01L29/778
CPC分类号： G01N27/414
摘要： Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
摘要翻译：本发明的实施例包括具有InGaP / GaAs HEMT的AlGaAs / GaAs高电子迁移率晶体管（HEMT）的传感器。 InAlAs / InGaAs HEMT，AlGaAs / InGaAs PHEMT，InAlAs / InGaAs PHEMT，Sb基HEMT或基于InAs的HEMT，HEMT在门表面具有目标受体的功能化。目标受体允许敏感性用于检测乳腺癌，前列腺癌，肾损伤，氯化物，葡萄糖，金属或pEI的目标（或底物），当溶液与传感器接触时，HEMI产生信号。解决方案可以是血液，唾液，尿液，呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

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