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1. 发明授权

US06169756A Vertical cavity surface-emitting laser with optical guide and current aperture 失效
标题翻译：垂直腔表面发射激光器，具有光导和电流孔径
公开(公告)号：US06169756A
公开(公告)日：2001-01-02
申请号：US08997710
申请日：1997-12-23
申请人： Leo Maria Chirovsky , Lucian Arthur D'Asaro , William Scott Hobson , Sanghee Park Hui , Ronald Eugene Leibenguth , Betty Jyue Tseng , James Dennis Wynn , George John Zydzik
发明人： Leo Maria Chirovsky , Lucian Arthur D'Asaro , William Scott Hobson , Sanghee Park Hui , Ronald Eugene Leibenguth , Betty Jyue Tseng , James Dennis Wynn , George John Zydzik
IPC分类号： H01S5187
CPC分类号： H01S5/18341 , H01S5/18308 , H01S5/18369 , H01S5/2063
摘要： A VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively. In one embodiment, the optical guide comprises an intracavity high refractive index mesa disposed transverse to the cavity resonator axis and a multi-layered dielectric (i.e., non-epitaxial) mirror overlaying the mesa. In another embodiment, the current guide comprises an annular first electrode which laterally surrounds the mesa but has an inside diameter which is greater than that of an ion-implantation-defined current aperture. The current guide causes current to flow laterally from the first electrode along a first path segment which is essentially perpendicular to the resonator axis, then vertically from the first segment along a second path segment essentially parallel to that axis, and finally through the current aperture and the active region to a second electrode. The dielectric mirror is deposited only after the formation of the guides in order to facilitate their fabrication.
摘要翻译： VCSEL包括分别提供独特形式的驱动电流和横向限制的独立电流和光导。在一个实施例中，光导包括横向于空腔谐振器轴的腔内高折射率台面和覆盖台面的多层电介质（即非外延）镜。在另一个实施例中，电流引导件包括横向包围台面但具有大于离子注入限定电流孔径的内径的环形第一电极。当前的引导件导致电流沿着基本上垂直于谐振器轴线的第一路径段从第一电极横向流动，然后沿着基本上平行于该轴线的第二路径段从第一段垂直流动，最后通过电流孔径有源区到第二电极。只有在形成引导件之后才沉积电介质镜，以便于它们的制造。

2. 发明授权

US5668049A Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur 失效
标题翻译：制造基于GaAs的激光器的方法，其包括具有气相硫的小面涂层
公开(公告)号：US5668049A
公开(公告)日：1997-09-16
申请号：US692834
申请日：1996-07-31
申请人： Utpal Kumar Chakrabarti , William Scott Hobson , Fan Ren , Melinda Lamont Schnoes
发明人： Utpal Kumar Chakrabarti , William Scott Hobson , Fan Ren , Melinda Lamont Schnoes
IPC分类号： H01L33/00 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/223 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0202 , H01S5/0282 , H01S5/223 , H01S5/34313
摘要： In a method of making a GaAs-based semiconductor laser, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H.sub.2 S plasma. Following the exposure, the cleavage facets are coated in the chamber with a protective dielectric (preferably silicon nitride) layer. The method can be practiced with high through-put, and can yield lasers (e.g., 980 nm pump lasers for optical fiber amplifiers) capable of operation at high power.
摘要翻译：在制造基于GaAs的半导体激光器的方法中，完全处理的晶片通常在环境气氛中被切割成激光棒，激光棒被装载到可抽空的沉积室（优选地是ECR CVD室）中并暴露于 H2S等离子体。暴露后，将裂解小面用保护电介质（优选氮化硅）层涂覆在腔室中。该方法可以通过高通量实现，并且可以产生能够在高功率下操作的激光器（例如，用于光纤放大器的980nm泵浦激光器）。

3. 发明授权

US6044100A Lateral injection VCSEL 失效
标题翻译：侧向注入VCSEL
公开(公告)号：US6044100A
公开(公告)日：2000-03-28
申请号：US997712
申请日：1997-12-23
申请人： William Scott Hobson , Daryoosh Vakhshoori
发明人： William Scott Hobson , Daryoosh Vakhshoori
IPC分类号： H01S5/183 , H01S3/19 , H01L29/06
CPC分类号： H01S5/18311 , H01S5/18341 , H01S5/18369
摘要： A VCSEL comprises a pair of multi-layered mirrors forming an optical cavity resonator having its axis perpendicular to the layers of the mirrors, an active region disposed within the resonator, and a current guide for directing pumping current through an aperture to generate stimulated emission of radiation which propagates along the resonator axis. A portion of the radiation forms an output signal which emerges through at least one of the mirrors. The current guide includes a lateral injection structure disposed between one of the mirrors and the current aperture. The lateral injection structure comprises at least one relatively thin, highly doped semiconductor layer, each of the highly doped layer(s) being located at a node of the standing wave of the intracavity radiation, at least one lower doped semiconductor layer disposed adjacent each of the highly doped layers (e.g., one lower doped layer sandwiched between a pair of highly doped layers), and an etch stop layer disposed between the one mirror and the uppermost highly doped layer.
摘要翻译： VCSEL包括一对多层反射镜，其形成具有垂直于反射镜的层的轴的光腔谐振器，设置在谐振器内的有源区，以及用于引导泵浦电流通过孔径以产生受激发射的辐射沿着谐振器轴传播。辐射的一部分形成通过至少一个反射镜出射的输出信号。当前的引导件包括设置在反射镜之一和电流孔之间的横向注射结构。横向注射结构包括至少一个相对较薄的高度掺杂的半导体层，每个高度掺杂层位于腔内辐射的驻波的一个节点处，至少一个下掺杂半导体层邻近高掺杂层（例如，夹在一对高掺杂层之间的一个下掺杂层）和设置在一个反射镜和最上面的高掺杂层之间的蚀刻停止层。

4. 发明授权

US5815521A Semiconductor laser with low beam divergence 失效
标题翻译：具有低光束散度的半导体激光器
公开(公告)号：US5815521A
公开(公告)日：1998-09-29
申请号：US906655
申请日：1997-08-07
申请人： William Scott Hobson , Daryoosh Vakhshoori
发明人： William Scott Hobson , Daryoosh Vakhshoori
IPC分类号： G02B6/42 , H01S3/06 , H01S3/10 , H01S5/00 , H01S5/20 , H01S5/32 , H01S5/343 , H04B10/02 , H04B10/28 , H01S3/19 , G02B6/10
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34313 , H01S2301/18 , H01S2302/00 , H01S5/2004 , H01S5/209 , H01S5/3211
摘要： The inventive III/V semiconductor lasers comprise mode-shaping layers disposed in the upper and lower cladding regions, respectively, and having larger refractive index than the adjoining cladding material. Incorporation of the mode-shaping layers can significantly spread the mode structure of the laser, with attendant reduction of beam spreading. Preferred embodiments are Al-free III/V semiconductor lasers. Especially preferred are such lasers that do not have quaternary III/V semiconductor material between active region and substrate, for improved heat removal.
摘要翻译：本发明的III / V半导体激光器包括分别设置在上包层区域和下包层区域中并且具有比邻接包层材料更大的折射率的模式形成层。结合模式成形层可以显着地扩展激光器的模式结构，伴随着光束扩展的减少。优选实施例是无Al III / V半导体激光器。特别优选的是这样的激光器，其在活性区域和衬底之间不具有季III / V半导体材料，以改善散热。

5. 发明授权

US06493368B1 Lateral injection vertical cavity surface-emitting laser 有权
标题翻译：侧向注射垂直腔表面发射激光器
公开(公告)号：US06493368B1
公开(公告)日：2002-12-10
申请号：US09605342
申请日：2000-06-28
申请人： Leo Maria Chirovsky , Lucian Arthur D'Asaro , William Scott Hobson , John Lopata
发明人： Leo Maria Chirovsky , Lucian Arthur D'Asaro , William Scott Hobson , John Lopata
IPC分类号： H01S500
CPC分类号： H01S5/18341 , H01S5/0421 , H01S5/0422 , H01S5/18308 , H01S5/18327 , H01S5/18369 , H01S5/18377 , H01S5/2063
摘要： A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and lower contact layers located on opposite sides of the active region, upper and lower electrodes disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure including an apertured high resistivity layer for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion of the lower contact layer that extends under the top electrode has relatively high resistivity. This feature of our invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance.
摘要翻译：侧向注入VCSEL包括形成空腔谐振器的上镜和下镜，设置在谐振器中的有源区，位于有源区的相对侧上的高导电性上和下接触层，设置在上接触层和下接触层上的上电极和下电极以及电流引导结构，其包括用于限制电流在相对窄的通道中流动通过有源区域的有孔的高电阻率层，其特征在于，所述下接触层的一部分，在顶部电极下方具有较高的电阻率。本发明的这个特征有两个目的。首先，它抑制平行路径中的电流流动，并且因此倾向于使孔径中的电流密度分布更有利于基模。二是降低寄生电容。

6. 发明授权

US06271069B1 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body 失效
标题翻译：在GaAs基半导体本体上制造包含氧化物层的制品的方法
公开(公告)号：US06271069B1
公开(公告)日：2001-08-07
申请号：US09122558
申请日：1998-07-24
申请人： Young-Kai Chen , Alfred Yi Cho , William Scott Hobson , Minghwei Hong , Jenn-Ming Kuo , Jueinai Raynien Kwo , Donald Winslow Murphy , Fan Ren
发明人： Young-Kai Chen , Alfred Yi Cho , William Scott Hobson , Minghwei Hong , Jenn-Ming Kuo , Jueinai Raynien Kwo , Donald Winslow Murphy , Fan Ren
IPC分类号： H01L2976
CPC分类号： H01L29/517 , C23C14/08 , H01L21/28158 , H01L21/28264 , H01L21/8252 , H01L27/0605 , H01L29/66522 , H01L29/78 , H01L33/44 , H01S5/028
摘要： Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1×1011 cm−2 eV−1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.1.
摘要翻译：公开了制造基于GaAs的增强型MOS-FET的方法以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是没有蚀刻凹槽或外延再生长的平面器件，其栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下至多为1×10 11 cm -2 eV-1）。该方法涉及离子注入，在含As气氛中的注入活化，表面重构和栅极氧化物的原位沉积。在优选的实施方案中，栅极氧化物形成之后的处理步骤在高于300℃的空气中或在高于约700℃的UHV中进行。该方法可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET以及包括MOS-FET和MES-FET的IC。该方法包括沉积总体组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电荷稳定剂元素，x大于或等于零选择z以满足Ga和A基本上完全氧化，y /（x + y）大于0.1的要求。

7. 发明授权

US5912498A Article comprising an oxide layer on GAN 失效
标题翻译：文章包括GAN上的氧化物层
公开(公告)号：US5912498A
公开(公告)日：1999-06-15
申请号：US948874
申请日：1997-10-10
申请人： William Scott Hobson , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
发明人： William Scott Hobson , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
IPC分类号： H01L29/78 , H01L21/20 , H01L21/28 , H01L21/316 , H01L29/51 , H01L29/786 , H01L29/76
CPC分类号： H01L29/517 , H01L21/28264 , H01L21/31604
摘要： A high quality oxide layer has been formed on a GaN surface by a method that involves preparation of the GaN such that the surface is essentially atomically clean and essentially atomically ordered, and that further involves exposing the surface to evaporant from a GGG (gallium gadolinium garnet) evaporation source. MOS structures comprising the GaN/oxide combination have shown low leakage current, as well as charge accumulation and depletion.
摘要翻译：通过涉及制备GaN的方法，GaN表面上形成高质量的氧化物层，使得表面基本上是原子上清洁的并且基本上是原子排列的，并且进一步包括将表面从GGG（镓钆石榴石）蒸发源。包括GaN /氧化物组合的MOS结构显示出低的漏电流以及电荷累积和耗尽。

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