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1. 发明申请

US20110068372A1 SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS 有权
标题翻译：传感器使用高电子移动晶体管
公开(公告)号：US20110068372A1
公开(公告)日：2011-03-24
申请号：US12992002
申请日：2009-03-20
申请人： Fan Ren , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
发明人： Fan Ren , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
IPC分类号： H01L29/778
CPC分类号： G01N27/414
摘要： Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
摘要翻译：本发明的实施例包括具有InGaP / GaAs HEMT的AlGaAs / GaAs高电子迁移率晶体管（HEMT）的传感器。 InAlAs / InGaAs HEMT，AlGaAs / InGaAs PHEMT，InAlAs / InGaAs PHEMT，Sb基HEMT或基于InAs的HEMT，HEMT在门表面具有目标受体的功能化。目标受体允许敏感性用于检测乳腺癌，前列腺癌，肾损伤，氯化物，葡萄糖，金属或pEI的目标（或底物），当溶液与传感器接触时，HEMI产生信号。解决方案可以是血液，唾液，尿液，呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

2. 发明申请

US20100188069A1 SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS 审中-公开
标题翻译：传感器使用高电子移动晶体管
公开(公告)号：US20100188069A1
公开(公告)日：2010-07-29
申请号：US12724117
申请日：2010-03-15
申请人： FAN REN , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
发明人： FAN REN , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
IPC分类号： G01N27/26 , H01L29/778
CPC分类号： G01N33/54306 , G01N27/4145 , G01N33/0045 , H01L29/2003 , H01L29/7787
摘要： Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
摘要翻译：本发明的实施例包括在HEMT的栅极区域上具有捕获试剂的高电子迁移率晶体管（HEMT）的传感器。示例传感器包括在栅极区域上具有薄金层的HEMT和结合的抗体; 栅区上的薄金层和螯合剂; 栅极区域上的非天然栅极电介质; 以及在栅极区域上具有固定化酶的非天然电介质的纳米棒。包括抗体或酶的实施方案可以具有通过结合基团结合到Au-门的抗体或酶。本发明的其它实施方案是使用传感器检测乳腺癌，前列腺癌，肾损伤，葡萄糖，金属或pH的方法，当溶液与传感器接触时，HEMT产生信号。解决方案可以是血液，唾液，尿液，呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

3. 发明授权

US08835984B2 Sensors using high electron mobility transistors 有权
标题翻译：使用高电子迁移率晶体管的传感器
公开(公告)号：US08835984B2
公开(公告)日：2014-09-16
申请号：US12992002
申请日：2009-03-20
申请人： Fan Ren , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
发明人： Fan Ren , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
IPC分类号： H01L29/72 , G01N27/414
CPC分类号： G01N27/414
摘要： Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
摘要翻译：本发明的实施例包括具有InGaP / GaAs HEMT的AlGaAs / GaAs高电子迁移率晶体管（HEMT）的传感器。 InAlAs / InGaAs HEMT，AlGaAs / InGaAs PHEMT，InAlAs / InGaAs PHEMT，Sb基HEMT或基于InAs的HEMT，HEMT在门表面具有目标受体的功能化。目标受体允许敏感性用于检测乳腺癌，前列腺癌，肾损伤，氯化物，葡萄糖，金属或pEI的目标（或底物），当溶液与传感器接触时，HEMI产生信号。解决方案可以是血液，唾液，尿液，呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

4. 发明申请

US20110117669A1 MATERIALS AND METHODS FOR DETECTING TOXINS, PATHOGENS AND OTHER BIOLOGICAL MATERIALS 审中-公开
标题翻译：用于检测毒素，病原体和其他生物材料的材料和方法
公开(公告)号：US20110117669A1
公开(公告)日：2011-05-19
申请号：US12664022
申请日：2009-11-06
申请人： Fan Ren , Stephen John Pearton , Tanmay Lele
发明人： Fan Ren , Stephen John Pearton , Tanmay Lele
IPC分类号： H01L29/20 , H01L29/737 , G01N33/566
CPC分类号： G01N27/3275 , G01N27/4145 , G01N33/54373 , G01N33/56911 , G01N33/56983 , G01N2333/33
摘要： Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs.
摘要翻译：本发明的实施方案提供可用于检测毒素，病原体和其他生物材料的结合分子官能化的高电子迁移率晶体管（HEMT）。在具体实施方案中，抗体功能化的HEMT可用于检测肉毒杆菌毒素。抗体可以通过固定化的巯基乙酸锚定在HEMT的金层门区。本发明的检测器的实施例可以用于基于AlGaN / GaN HEMT的现场可部署电子生物学应用中。

5. 发明授权

US08828713B2 Sensors using high electron mobility transistors 有权
标题翻译：使用高电子迁移率晶体管的传感器
公开(公告)号：US08828713B2
公开(公告)日：2014-09-09
申请号：US12966531
申请日：2010-12-13
申请人： Fan Ren , Stephen John Pearton , Tanmay Lele
发明人： Fan Ren , Stephen John Pearton , Tanmay Lele
IPC分类号： G01N27/00
CPC分类号： G01N33/54306 , G01N27/4145 , G01N33/0045 , H01L29/2003 , H01L29/7787
摘要： Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
摘要翻译：本发明的实施例包括在HEMT的栅极区域上具有捕获试剂的高电子迁移率晶体管（HEMT）的传感器。示例传感器包括在栅极区域上具有薄金层的HEMT和结合的抗体; 栅区上的薄金层和螯合剂; 栅极区域上的非天然栅极电介质; 以及在栅极区域上具有固定化酶的非天然电介质的纳米棒。包括抗体或酶的实施方案可以具有通过结合基团结合到Au-门的抗体或酶。本发明的其它实施方案是使用传感器检测乳腺癌，前列腺癌，肾损伤，葡萄糖，金属或pH的方法，当溶液与传感器接触时，HEMT产生信号。解决方案可以是血液，唾液，尿液，呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

6. 发明申请

US20120098599A1 ENHANCEMENT MODE HEMT FOR DIGITAL AND ANALOG APPLICATIONS 审中-公开
标题翻译：数字和模拟应用的增强模式HEMT
公开(公告)号：US20120098599A1
公开(公告)日：2012-04-26
申请号：US13380956
申请日：2010-06-29
申请人： Chih-Yang Chang , Fan Ren , Stephen John Pearton
发明人： Chih-Yang Chang , Fan Ren , Stephen John Pearton
IPC分类号： H03F3/21 , H01L21/335 , H01L29/778 , H01L27/088 , H01L29/20 , H01L29/161
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/4236 , H01L29/517
摘要： An enhancement mode (E-mode) HEMT is provided that can be used for analog and digital applications. In a specific embodiment, the HEMT can be an AlN/GaN HEMT. The subject E-mode device can be applied to high power, high voltage, high temperature applications, including but not limited to telecommunications, switches, hybrid electric vehicles, power flow control and remote sensing. According to an embodiment of the present invention, E-mode devices can be fabricated by performing an oxygen plasma treatment with respect to the gate area of the HEMT. The oxygen plasma treatment can be, for example, an O2 plasma treatment. In addition, the threshold voltage of the E-mode HEMT can be controlled by adjusting the oxygen plasma exposure time. By using a masking layer protecting regions for depletion mode (D-mode) devices, D-mode and E-mode devices can be fabricated on a same chip.
摘要翻译：提供了可用于模拟和数字应用的增强模式（E模式）HEMT。在具体实施方式中，HEMT可以是AlN / GaN HEMT。主题E模式设备可以应用于高功率，高电压，高温应用，包括但不限于电信，交换机，混合动力电动车辆，电力流量控制和遥感。根据本发明的实施例，可以通过对HEMT的栅极区进行氧等离子体处理来制造E模式器件。氧等离子体处理可以是例如O 2等离子体处理。此外，E模式HEMT的阈值电压可以通过调节氧等离子体暴露时间来控制。通过使用用于耗尽模式（D模式）器件的掩模层保护区域，可以在同一芯片上制造D模式和E模式器件。

7. 发明申请

US20110088456A1 NORMALIZED HYDROGEN SENSING AND METHODS OF FABRICATING A NORMALIZED HYDROGEN SENSOR 审中-公开
标题翻译：普通氢传感器的正规化感应方法和正规化氢传感器的制作方法
公开(公告)号：US20110088456A1
公开(公告)日：2011-04-21
申请号：US12723802
申请日：2010-03-15
申请人： FAN REN , Stephen John Pearton
发明人： FAN REN , Stephen John Pearton
IPC分类号： G01N27/00 , H01L29/778
CPC分类号： G01N33/005 , G01N27/4141 , H01L27/0605 , H01L27/085 , H01L29/42316 , H01L29/51 , H01L29/7787
摘要： HEMT-based hydrogen sensors are provided. In accordance with one embodiment, a normalized sensor is provided having a control HEMT-based sensor connected in series to an active HEMT-based sensor. The control and the active sensor include functionalized gate regions. The gate functionalization for both the control and the active sensor is the same material that selectively absorbs hydrogen gas. The control sensor further includes a protective layer to inhibit its gate functionalization from being exposed to hydrogen. In one embodiment, the final metal for the contacts of the sensors is used as the protective layer. In other embodiments, the protective layer is a dielectric or polymer.
摘要翻译：提供基于HEMT的氢传感器。根据一个实施例，提供了具有与基于活动的基于HEMT的传感器串联连接的基于控制HEMT的传感器的归一化传感器。控制和主动传感器包括功能化的门区。控制和有源传感器的门功能化是选择性吸收氢气的相同材料。控制传感器还包括一个保护层，以阻止其门官能化暴露于氢气。在一个实施例中，用于传感器的触点的最终金属用作保护层。在其它实施方案中，保护层是电介质或聚合物。

8. 发明授权

US08222041B2 Oxygen and carbon dioxide sensing 失效
标题翻译：氧气和二氧化碳检测
公开(公告)号：US08222041B2
公开(公告)日：2012-07-17
申请号：US12990377
申请日：2009-05-08
申请人： Fan Ren , Stephen John Pearton
发明人： Fan Ren , Stephen John Pearton
IPC分类号： G01N33/497 , G01N27/00
CPC分类号： G01N33/004 , G01N27/4141 , Y10T436/20 , Y10T436/204998 , Y10T436/207497
摘要： A high electron mobility transistor (HEMT) capable of performing as a CO2 or O2 sensor is disclosed, hi one implementation, a polymer solar cell can be connected to the HEMT for use in an infrared detection system. In a second implementation, a selective recognition layer can be provided on a gate region of the HEMT. For carbon dioxide sensing, the selective recognition layer can be, in one example, PEI/starch. For oxygen sensing, the selective recognition layer can be, in one example, indium zinc oxide (IZO). In one application, the HEMTs can be used for the detection of carbon dioxide and oxygen in exhaled breath or blood.
摘要翻译：公开了能够作为CO 2或O 2传感器执行的高电子迁移率晶体管（HEMT）。在一个实施方案中，聚合物太阳能电池可以连接到用于红外检测系统的HEMT。在第二实施例中，可以在HEMT的栅极区域上提供选择性识别层。对于二氧化碳感测，在一个实例中，选择性识别层可以是PEI /淀粉。对于氧气感测，在一个示例中，选择性识别层可以是氧化铟锌（IZO）。在一个应用中，HEMT可用于检测呼出气或血液中的二氧化碳和氧气。

9. 发明申请

US20120058488A1 WIRELESS BASED MARINE PATHOGENS DETECTION SYSTEM 审中-公开
标题翻译：无线基于海洋病原体检测系统
公开(公告)号：US20120058488A1
公开(公告)日：2012-03-08
申请号：US13319417
申请日：2010-05-06
申请人： Barbara Jane Sheppard , Yu-Lin Wang , Fan Ren , Stephen John Pearton
发明人： Barbara Jane Sheppard , Yu-Lin Wang , Fan Ren , Stephen John Pearton
IPC分类号： C12Q1/04 , G01N27/00 , C12M1/34
CPC分类号： G01N33/56905 , G01N27/414 , G01N27/4145 , Y02A50/52
摘要： Embodiments of the present Invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.
摘要翻译：本发明的实施方案提供用于海洋或淡水病原体感测的抗体功能化的高电子迁移率晶体管（HEMT）装置。在一个实施方案中，海洋病原体可以是牛皮癣菌（Perkinsus marinus）。感测单元可以包括在HEMT上制造的无线发射器。感测单元允许在不直接进入电源插座的地区进行测试，并可以使用无线发射器将测试结果发送到中央位置。根据实施例，可以在几秒钟内实现测试结果。

10. 发明申请

US20110084713A1 CHLORIDE DETECTION 有权
标题翻译：氯离子检测
公开(公告)号：US20110084713A1
公开(公告)日：2011-04-14
申请号：US12997163
申请日：2008-11-13
申请人： Fan Ren , Stephen John Pearton
发明人： Fan Ren , Stephen John Pearton
IPC分类号： G01R27/08 , H01L29/778 , H01L21/335
CPC分类号： G01N27/414
摘要： A high electron mobility transistor (HEMT) capable of performing as a chlorine sensor is disclosed. In one implementation, a silver chloride layer can be provided on a gate region of the HEMT. In one application, the HEMTs can be used for the measurement and detection of chloride in bio-sensing applications. In another application, the HEMTs can be used for the detection of chloride in water for environmental and health applications.
摘要翻译：公开了能够作为氯传感器执行的高电子迁移率晶体管（HEMT）。在一个实施方式中，可以在HEMT的栅极区域上提供氯化银层。在一个应用中，HEMT可用于测量和检测生物感应应用中的氯化物。在另一个应用中，HEMT可用于检测水中的氯化物，以用于环境和健康应用。

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