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1. 发明授权

US5821171A Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article 失效
标题翻译：在GaAs系半导体上具有镓层的制品及其制造方法
公开(公告)号：US5821171A
公开(公告)日：1998-10-13
申请号：US408678
申请日：1995-03-22
申请人： Minghwei Hong , Jueinai Raynien Kwo , Joseph Petrus Mannaerts , Matthias Passlack , Fan Ren , George John Zydzik
发明人： Minghwei Hong , Jueinai Raynien Kwo , Joseph Petrus Mannaerts , Matthias Passlack , Fan Ren , George John Zydzik
IPC分类号： C23C14/08 , H01L29/51 , H01L31/04 , H01L33/44 , H01S5/00 , H01S5/028 , H01L21/316
CPC分类号： H01L29/517 , C23C14/08 , H01L33/44 , H01S5/028
摘要： A high quality interface between a GaAs-based semiconductor and a Ga.sub.2 O.sub.3 dielectric an be formed if the semiconductor surface is caused to have less than 1% of a monolayer impurity coverage at completion of the first monolayer of the Ga.sub.2 O.sub.3 on the surface. This is achieved, for instance, by preparing the surface of a GaAs wafer under UHV conditions in a first growth chamber, transferring the wafer through a transfer module under UHV to a second growth chamber that is also under UHV, and growing the dielectric by evaporation of Ga.sub.2 O.sub.3 from a solid source, the process carried out such that the integrated impurity exposure of the surface is at most 100 Langmuirs. Articles according to the invention have low interface state density (
摘要翻译：如果半导体表面在表面上的Ga 2 O 3的第一单层完成时具有小于单层杂质覆盖率的1％，则形成GaAs基半导体和Ga 2 O 3电介质之间的高质量界面。这通过例如通过在第一生长室中在UHV条件下制备GaAs晶片的表面来实现，将晶片通过UHV下的转移模块转移到也在UHV下的第二生长室，并通过蒸发使电介质生长的Ga 2 O 3来自固体源，所述方法进行，使得表面的综合杂质暴露量为至多100兰缪尔。根据本发明的制品具有低界面态密度（<1011 / cm2×Ve）和界面复合速度（<104cm / s）。根据本发明的半导体/ Ga 2 O 3结构可以有利地用于各种电子或光电子器件，例如GaAs基MOS-FET，HBT，太阳能电池上的激光器。

2. 发明授权

US06305195B1 Process for fabricating silica article involving joining of discrete bodies 有权
标题翻译：制造涉及离散体的接合的二氧化硅制品的方法
公开(公告)号：US06305195B1
公开(公告)日：2001-10-23
申请号：US09321076
申请日：1999-05-27
申请人： James William Fleming, Jr. , George John Zydzik
发明人： James William Fleming, Jr. , George John Zydzik
IPC分类号： C03B37018
CPC分类号： C03B23/207 , C03B37/01205 , C03B37/02736 , C03B2205/30
摘要： An improved process for fabricating a refractory dielectric article, in particular silica optical fiber, is provided. The fabrication process involves joining of two elongated bodies—typically silica preforms—end-to-end by use of an isothermal plasma torch technique. A long preform made in this manner allows drawing of optical fiber with less down-time and waste than current processes. The plasma torch technique also produces low perturbations within the resultant preform, thereby increasing the amount of usable fiber.
摘要翻译：提供了制造难熔电介质制品，特别是二氧化硅光纤的改进方法。制造过程涉及通过使用等温等离子体焰炬技术来连接两个细长体 - 通常是二氧化硅预制件 - 端对端。以这种方式制成的长预制件允许拉伸光纤比当前工艺更少的停机时间和浪费。等离子体焰炬技术还在所得预制件内产生低扰动，从而增加可用纤维的量。

3. 发明授权

US06208680B1 Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors 失效
标题翻译：具有ZNS / CA-MG-氟化物多层镜的光学装置
公开(公告)号：US06208680B1
公开(公告)日：2001-03-27
申请号：US08997711
申请日：1997-12-23
申请人： Leo Maria Chirovsky , Sanghee Park Hui , George John Zydzik
发明人： Leo Maria Chirovsky , Sanghee Park Hui , George John Zydzik
IPC分类号： H01S5187
CPC分类号： H01S5/18369 , H01S5/0207 , H01S5/18308 , H01S5/18341
摘要： In a multi-layered dielectric mirror the higher refractive index layers comprise ZnS and the lower refractive index layers comprise a composite of approximately 95%MgF2 and 5%CaF2 by mole fraction. In one embodiment, the fluoride layers are e-beam deposited from an essentially eutectic melt of the two fluorides. In another embodiment, the semiconductor surface on which the mirror is formed is protected by an aluminum borosilicate glass layer. Application of the invention to the design and fabrication of VCSELs is also described.
摘要翻译：在多层电介质镜中，较高的折射率层包含ZnS，较低的折射率层包含约95％MgF 2和5％CaF 2的摩尔分数的复合物。在一个实施方案中，氟化物层由两种氟化物的基本上共熔的熔体电子束沉积。在另一个实施例中，其上形成有反射镜的半导体表面由硼硅酸铝玻璃层保护。还描述了本发明在VCSEL的设计和制造中的应用。

4. 发明授权

US5719077A Fixture and method for laser fabrication by in-situ cleaving of semiconductor bars 失效
标题翻译：通过半导体棒的原位切割激光制造的夹具和方法
公开(公告)号：US5719077A
公开(公告)日：1998-02-17
申请号：US549897
申请日：1995-10-30
申请人： Utpal Kumar Chakrabarti , Judith Francavilla de Jong , Erdmann Frederick Schubert , James Dennis Wynn , George John Zydzik
发明人： Utpal Kumar Chakrabarti , Judith Francavilla de Jong , Erdmann Frederick Schubert , James Dennis Wynn , George John Zydzik
IPC分类号： B28D5/00 , H01L21/301 , H01L21/304 , H01S5/00 , H01S5/02 , H01S5/40 , H01L21/203
CPC分类号： H01L21/3043 , B28D5/0017 , H01S5/0201 , H01S5/0202 , H01S5/4025 , Y10T225/357
摘要： The invention is an apparatus and method for cleaving a semiconductor bar and coating the cleaved facets within a vacuum environment. The apparatus is a fixture having at least one rotator for cleaving one or more semiconductor samples into semiconductor bars and positioning the semiconductor bars for immediate coating of their cleaved facets. The fixture is operably positioned within a processing chamber and exposed to a conventional coating medium before, during or immediately after cleaving the semiconductor sample. The fixture cleaves the semiconductor samples in a manner that reduces semiconductor sample waste and also allows the processing environment requirements to be reduced compared to other cleaving and coating techniques. A single actuation feed-through mechanism actuates the fixture from outside of the processing chamber.
摘要翻译：本发明是用于切割半导体棒并在真空环境中涂覆切割面的装置和方法。该装置是具有至少一个旋转器的固定装置，用于将一个或多个半导体样品切割成半导体棒，并且定位半导体棒以立即涂覆其切割面。夹具可操作地定位在处理室内，并在切割半导体样品之前，期间或之后暴露于常规涂覆介质。固定装置以减少半导体样品废物的方式切割半导体样品，并且与其他切割和涂覆技术相比，可以减少处理环境要求。单个致动馈通机构从处理室的外部致动固定装置。

5. 发明授权

US06553790B1 Process for fabricating optical fiber involving tuning of core diameter profile 有权
标题翻译：制造光纤涉及芯直径轮廓调谐的工艺
公开(公告)号：US06553790B1
公开(公告)日：2003-04-29
申请号：US09567536
申请日：2000-05-09
申请人： James William Fleming, Jr. , George John Zydzik
发明人： James William Fleming, Jr. , George John Zydzik
IPC分类号： C03B3707
CPC分类号： C03B37/01254 , C03B37/01211 , C03B37/0124 , C03B2203/18
摘要： A silica-based core rod is traversed by a heat source along its longitudinal axis, to provide heated, softened regions. During the traverse, compressive or tensile movements are provided along the rod's longitudinal axis, these movements inducing, respectively, increases or decreases in the core diameter at the softened regions. By providing selective core diameter increases and/or decreases across the entire length of the core rod, a desired core diameter profile is attained. It is possible to attain a substantially uniform core diameter, or a varying core diameter profile that provides particular properties, such as systematically varying dispersion. In addition, due to the ability to increase core diameter and core rod diameter in a controlled manner, it is possible to make larger core rods, and in turn larger fiber preforms, than presently possible.
摘要翻译：二氧化硅基芯棒沿其纵向轴线被热源横穿，以提供加热的软化区域。在横移过程中，沿着杆的纵向轴线提供压缩或拉伸运动，这些运动分别在软化区域处引起芯直径的增加或减小。通过在芯棒的整个长度上提供选择的芯直径增加和/或减小，获得期望的芯直径分布。可以获得基本均匀的芯直径或提供特定性能的变化的芯直径轮廓，例如系统变化的分散体。另外，由于能够以受控的方式增加芯直径和芯棒直径，所以可以制造比目前可能的更大的芯棒，以及大的纤维预制件。

6. 发明授权

US06169756A Vertical cavity surface-emitting laser with optical guide and current aperture 失效
标题翻译：垂直腔表面发射激光器，具有光导和电流孔径
公开(公告)号：US06169756A
公开(公告)日：2001-01-02
申请号：US08997710
申请日：1997-12-23
申请人： Leo Maria Chirovsky , Lucian Arthur D'Asaro , William Scott Hobson , Sanghee Park Hui , Ronald Eugene Leibenguth , Betty Jyue Tseng , James Dennis Wynn , George John Zydzik
发明人： Leo Maria Chirovsky , Lucian Arthur D'Asaro , William Scott Hobson , Sanghee Park Hui , Ronald Eugene Leibenguth , Betty Jyue Tseng , James Dennis Wynn , George John Zydzik
IPC分类号： H01S5187
CPC分类号： H01S5/18341 , H01S5/18308 , H01S5/18369 , H01S5/2063
摘要： A VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively. In one embodiment, the optical guide comprises an intracavity high refractive index mesa disposed transverse to the cavity resonator axis and a multi-layered dielectric (i.e., non-epitaxial) mirror overlaying the mesa. In another embodiment, the current guide comprises an annular first electrode which laterally surrounds the mesa but has an inside diameter which is greater than that of an ion-implantation-defined current aperture. The current guide causes current to flow laterally from the first electrode along a first path segment which is essentially perpendicular to the resonator axis, then vertically from the first segment along a second path segment essentially parallel to that axis, and finally through the current aperture and the active region to a second electrode. The dielectric mirror is deposited only after the formation of the guides in order to facilitate their fabrication.
摘要翻译： VCSEL包括分别提供独特形式的驱动电流和横向限制的独立电流和光导。在一个实施例中，光导包括横向于空腔谐振器轴的腔内高折射率台面和覆盖台面的多层电介质（即非外延）镜。在另一个实施例中，电流引导件包括横向包围台面但具有大于离子注入限定电流孔径的内径的环形第一电极。当前的引导件导致电流沿着基本上垂直于谐振器轴线的第一路径段从第一电极横向流动，然后沿着基本上平行于该轴线的第二路径段从第一段垂直流动，最后通过电流孔径有源区到第二电极。只有在形成引导件之后才沉积电介质镜，以便于它们的制造。

7. 发明授权

US4013501A Growth of neodymium doped yttrium aluminum garnet crystals 失效
标题翻译：掺钕钇铝石榴石晶体的生长
公开(公告)号：US4013501A
公开(公告)日：1977-03-22
申请号：US690613
申请日：1976-05-27
申请人： Le Grand Gerard Van Uitert , George John Zydzik
发明人： Le Grand Gerard Van Uitert , George John Zydzik
IPC分类号： C30B9/00 , B01J17/04 , C01F17/00
CPC分类号： C30B9/00 , C30B29/28
摘要： A method is disclosed for growing neodymium doped yttrium aluminum garnet crystals from a melt containing constituent oxides, lead oxide, lead fluoride, and boron trioxide. By subjecting the melt to a controlled temperature cycle while maintaining a temperature gradient in the melt, large size, high quality crystals are obtained. Crystals produced by the disclosed method are suited for laser application.
摘要翻译：公开了一种从含有组分氧化物，氧化铅，氟化铅和三氧化硼的熔体中生长钕掺杂的钇铝石榴石晶体的方法。通过在保持熔体中的温度梯度的同时对熔体进行受控温度循环，获得大尺寸，高质量的晶体。通过公开的方法生产的晶体适用于激光应用。

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