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1. 发明授权

US06808744B2 Method for preparing and regenerating a composite crucible 失效
标题翻译：复合坩埚的制备和再生方法
公开(公告)号：US06808744B2
公开(公告)日：2004-10-26
申请号：US10352654
申请日：2003-01-28
申请人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
发明人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
IPC分类号： B05D722
CPC分类号： C03B23/006 , C03B19/095 , C03B29/02 , C30B15/10 , C30B35/002 , Y10T428/13 , Y10T428/131 , Y10T428/1314 , Y10T428/1317
摘要： A composite crucible for pulling up monocrystalline silicon, which is superior in shape stability and suitable for a large-sized one is provided. The composite crucible is characterized in that a carbonaceous material as an outer layer and a quartz glass as an inner layer are integrally formed. Methods for preparing and regenerating a composite crucible are also disclosed.
摘要翻译：提供了一种复合坩埚，其用于提升单晶硅，其形状稳定性优异并且适合于大尺寸硅。复合坩埚的特征在于，作为外层的碳质材料和作为内层的石英玻璃一体形成。还公开了制备和再生复合坩埚的方法。

2. 发明授权

US06524668B1 Composite crucible, and preparation method and regeneration method thereof 有权
标题翻译：复合坩埚及其制备方法及再生方法
公开(公告)号：US06524668B1
公开(公告)日：2003-02-25
申请号：US09334239
申请日：1999-06-16
申请人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
发明人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
IPC分类号： B29D2200
CPC分类号： C03B23/006 , C03B19/095 , C03B29/02 , C30B15/10 , C30B35/002 , Y10T428/13 , Y10T428/131 , Y10T428/1314 , Y10T428/1317
摘要： A composite crucible for pulling up monocrystalline silicone, which is superior in shape stability and suitable for a large-sized one is provided. The composite crucible is characterized in that a carbonaceous material as an outer layer and a quartz glass as an inner layer are integrally formed.
摘要翻译：提供了一种用于提升单晶硅的复合坩埚，其具有优异的形状稳定性并且适合于大尺寸硅胶。复合坩埚的特征在于，作为外层的碳质材料和作为内层的石英玻璃一体形成。

3. 发明授权

US07160387B2 High purity silica crucible by electrolytic refining, and its production method and pulling method 有权
标题翻译：高纯度二氧化硅坩埚通过电解精炼及其制备方法和拉拔方法
公开(公告)号：US07160387B2
公开(公告)日：2007-01-09
申请号：US10781682
申请日：2004-02-20
申请人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
发明人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
IPC分类号： C30B13/06
CPC分类号： C03C3/06 , C03B19/095 , C03B2201/03 , C30B15/10 , C30B29/06 , Y10S117/90 , Y10T117/1032 , Y10T117/1052
摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.
摘要翻译：本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中，纯度为通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末中空旋转模具的内表面。该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化二氧化硅粉末层外面。

4. 发明申请

US20050000404A1 High purity silica crucible by electrolytic refining, and its production method and pulling method 有权
标题翻译：高纯度二氧化硅坩埚通过电解精炼及其制备方法和拉拔方法
公开(公告)号：US20050000404A1
公开(公告)日：2005-01-06
申请号：US10781682
申请日：2004-02-20
申请人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
发明人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
IPC分类号： C03B20/00 , C03B19/09 , C30B15/00 , C30B15/10 , C30B29/06 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C03C3/06 , C03B19/095 , C03B2201/03 , C30B15/10 , C30B29/06 , Y10S117/90 , Y10T117/1032 , Y10T117/1052
摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.
摘要翻译：本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中，通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末中空旋转模具的内表面。该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化二氧化硅粉末层外面。

5. 发明授权

US08449352B2 Carbon electrode grinding apparatus 有权
标题翻译：碳电极研磨装置
公开(公告)号：US08449352B2
公开(公告)日：2013-05-28
申请号：US12687264
申请日：2010-01-14
申请人： Masanori Fukui , Minoru Shirakawa , Tadashi Nemoto , Tadashi Sato
发明人： Masanori Fukui , Minoru Shirakawa , Tadashi Nemoto , Tadashi Sato
IPC分类号： B24B19/00
CPC分类号： C03B19/095 , B24B19/16 , H05B7/085
摘要： A carbon electrode grinding apparatus for shaping a front end of an arc discharge carbon electrode is provided with front end grinding blades configured to grind a front end surface of the carbon electrode, lateral surface grinding blades configured to grind a surface from the front end surface to a base end of the carbon electrode, and rotation means configured to rotate and drive the front end grinding blades and the lateral surface grinding blades around a rotation axis line coincident with an axis line of the carbon electrode.
摘要翻译：用于使电弧放电碳电极的前端成形的碳电极研磨装置设置有前端研磨刀片，其被配置为研磨碳电极的前端表面，侧面研磨刀片被构造成从前端表面研磨表面到碳电极的基端，以及旋转装置，被配置为围绕与碳电极的轴线重合的旋转轴线旋转并驱动前端研磨刀片和侧面研磨刀片。

6. 发明授权

US08696813B2 Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible 有权
标题翻译：硅单晶的制造方法，硅单晶拉丝装置和玻璃状石英坩埚
公开(公告)号：US08696813B2
公开(公告)日：2014-04-15
申请号：US12786911
申请日：2010-05-25
申请人： Masanori Fukui , Hideki Watanabe , Nobumitsu Takase
发明人： Masanori Fukui , Hideki Watanabe , Nobumitsu Takase
IPC分类号： C30B15/04
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06
摘要： Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a long time and decrease of impurity concentration of a silicon single crystal can be expected. A method for manufacturing a silicon single crystal is provided. The method includes: detecting touching status of a seed crystal at silicon melt by supplying voltage V1 using a crucible side as a negative electrode and a wire side as a positive electrode and by monitoring change of the voltage, when the seed crystal provided at a front end of the wire touches the silicon melt inside a vitreous silica crucible; devitrifying an inner surface of the vitreous silica crucible as supplying voltage V2 using the crucible side as a positive electrode and the wire side as a negative electrode during a temperature control period; and growing a silicon single crystal by slowly pulling the seed crystal as supplying voltage V3 using the crucible side as a negative electrode and the wire side as a positive electrode after the temperature control period.
摘要翻译：监测硅熔体的泄漏，并检测硅熔体中的晶种的接触，此外，长时间拉伸和降低硅单晶的杂质浓度可以耐久的石英玻璃坩埚的增强可以是预期。提供了制造硅单晶的方法。该方法包括：通过使用坩埚侧作为负极并且线侧作为正极来提供电压V1，并通过监视电压的变化来检测硅熔体处的晶种的触摸状态导线的末端触及石英玻璃坩埚内的硅熔体; 在温度控制期间，使用坩埚侧作为正极而将作为负极的线侧作为供给电压V2而使玻璃状石英坩埚的内表面失透; 并且通过在坩埚侧作为负极并且在温度控制周期之后将线侧作为正极，通过缓慢地拉晶晶体作为供给电压V3来生长硅单晶。

7. 发明授权

US08172942B2 Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal 有权
标题翻译：电弧放电装置，玻璃石英玻璃坩埚的制造装置及其制造方法以及提高硅单晶的方法
公开(公告)号：US08172942B2
公开(公告)日：2012-05-08
申请号：US12253500
申请日：2008-10-17
申请人： Masanori Fukui , Koichi Suzuki , Takeshi Fujita
发明人： Masanori Fukui , Koichi Suzuki , Takeshi Fujita
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B17/00 , C30B21/02 , C30B28/06 , C30B35/00
CPC分类号： C30B15/10 , C03B19/095 , C30B29/06 , Y10T117/10 , Y10T117/1024 , Y10T117/1032
摘要： The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm3 to 1.80 g/cm3, and variability in density among the carbon electrodes is 0.2 g/cm3 or less. The carbon particles that constitute the carbon electrodes preferably have a particle diameter of 0.3 mm or less.
摘要翻译：电弧放电装置包括连接到用于加热二氧化硅粉末的电源的各相的多个碳电极，并且通过在碳电极之间产生电弧放电使其熔化。所有碳电极的密度范围为1.30g / cm 3至1.80g / cm 3，碳电极之间的密度变化率为0.2g / cm 3以下。构成碳电极的碳粒子的粒径优选为0.3mm以下。

8. 发明授权

US07736613B2 Modification process of synthetic silica powder and its quartz glass product 有权
标题翻译：合成二氧化硅粉及其石英玻璃制品的改性工艺
公开(公告)号：US07736613B2
公开(公告)日：2010-06-15
申请号：US10303899
申请日：2002-11-26
申请人： Masanori Fukui , Takahiro Satoh
发明人： Masanori Fukui , Takahiro Satoh
IPC分类号： C01B33/12 , C01B33/18 , C03B19/10
CPC分类号： C30B35/002 , C03B19/1065 , C03B2201/04 , C03B2201/20 , C03C1/026 , C30B15/10 , Y10T117/10 , Y10T428/13 , Y10T428/131 , Y10T428/1317
摘要： A modified synthetic silica powder is produced by heating in vacuum an amorphous synthetic silica powder produced by a sol-gel process, and then cooling the heated silica powder in an atmosphere containing helium. When the modified synthetic silica powder is fused and vitrified in a process of crucible production, the resulting quartz glass crucible contains hardly any bubbles.
摘要翻译：通过在真空中加热通过溶胶 - 凝胶法制备的无定形合成二氧化硅粉末，然后在含有氦气的气氛中冷却加热的二氧化硅粉末来制备改性合成二氧化硅粉末。当改性合成二氧化硅粉末在坩埚生产过程中熔融和玻璃化时，所得石英玻璃坩埚几乎不含任何气泡。

9. 发明申请

US20100170298A1 Vitreous silica crucible manufacturing apparatus 有权
标题翻译：硅玻璃坩埚制造设备
公开(公告)号：US20100170298A1
公开(公告)日：2010-07-08
申请号：US12684178
申请日：2010-01-08
申请人： Masanori Fukui , Hiroshi Kishi , Masaki Morikawa
发明人： Masanori Fukui , Hiroshi Kishi , Masaki Morikawa
IPC分类号： C03B19/06
CPC分类号： C03B19/095 , H05B7/085
摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.
摘要翻译：玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径基端的R1设定在0.6〜0.8的范围内。每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

10. 发明申请

US20100126407A1 SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON 审中-公开
标题翻译：二氧化硅玻璃巧克力和拉伸单晶硅的方法
公开(公告)号：US20100126407A1
公开(公告)日：2010-05-27
申请号：US12694661
申请日：2010-01-27
申请人： Hiroshi Kishi , Masanori Fukui
发明人： Hiroshi Kishi , Masanori Fukui
IPC分类号： C30B15/30
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , Y10T117/1024
摘要： A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm.
摘要翻译：一种用于拉拔单晶硅的石英玻璃坩埚，其包括圆柱形直体部分，底部和位于直体部分和底部之间的弯曲部分，其中弯曲的内壁表面的曲率半径部分是100到240毫米。弯曲部的壁厚W的变化优选为0.1〜1.4mm / cm。

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