专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06808744B2 Method for preparing and regenerating a composite crucible 失效
标题翻译：复合坩埚的制备和再生方法
公开(公告)号：US06808744B2
公开(公告)日：2004-10-26
申请号：US10352654
申请日：2003-01-28
申请人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
发明人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
IPC分类号： B05D722
CPC分类号： C03B23/006 , C03B19/095 , C03B29/02 , C30B15/10 , C30B35/002 , Y10T428/13 , Y10T428/131 , Y10T428/1314 , Y10T428/1317
摘要： A composite crucible for pulling up monocrystalline silicon, which is superior in shape stability and suitable for a large-sized one is provided. The composite crucible is characterized in that a carbonaceous material as an outer layer and a quartz glass as an inner layer are integrally formed. Methods for preparing and regenerating a composite crucible are also disclosed.
摘要翻译：提供了一种复合坩埚，其用于提升单晶硅，其形状稳定性优异并且适合于大尺寸硅。复合坩埚的特征在于，作为外层的碳质材料和作为内层的石英玻璃一体形成。还公开了制备和再生复合坩埚的方法。

2. 发明授权

US06524668B1 Composite crucible, and preparation method and regeneration method thereof 有权
标题翻译：复合坩埚及其制备方法及再生方法
公开(公告)号：US06524668B1
公开(公告)日：2003-02-25
申请号：US09334239
申请日：1999-06-16
申请人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
发明人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
IPC分类号： B29D2200
CPC分类号： C03B23/006 , C03B19/095 , C03B29/02 , C30B15/10 , C30B35/002 , Y10T428/13 , Y10T428/131 , Y10T428/1314 , Y10T428/1317
摘要： A composite crucible for pulling up monocrystalline silicone, which is superior in shape stability and suitable for a large-sized one is provided. The composite crucible is characterized in that a carbonaceous material as an outer layer and a quartz glass as an inner layer are integrally formed.
摘要翻译：提供了一种用于提升单晶硅的复合坩埚，其具有优异的形状稳定性并且适合于大尺寸硅胶。复合坩埚的特征在于，作为外层的碳质材料和作为内层的石英玻璃一体形成。

3. 发明授权

US07160387B2 High purity silica crucible by electrolytic refining, and its production method and pulling method 有权
标题翻译：高纯度二氧化硅坩埚通过电解精炼及其制备方法和拉拔方法
公开(公告)号：US07160387B2
公开(公告)日：2007-01-09
申请号：US10781682
申请日：2004-02-20
申请人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
发明人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
IPC分类号： C30B13/06
CPC分类号： C03C3/06 , C03B19/095 , C03B2201/03 , C30B15/10 , C30B29/06 , Y10S117/90 , Y10T117/1032 , Y10T117/1052
摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.
摘要翻译：本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中，纯度为通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末中空旋转模具的内表面。该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化二氧化硅粉末层外面。

4. 发明申请

US20050000404A1 High purity silica crucible by electrolytic refining, and its production method and pulling method 有权
标题翻译：高纯度二氧化硅坩埚通过电解精炼及其制备方法和拉拔方法
公开(公告)号：US20050000404A1
公开(公告)日：2005-01-06
申请号：US10781682
申请日：2004-02-20
申请人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
发明人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
IPC分类号： C03B20/00 , C03B19/09 , C30B15/00 , C30B15/10 , C30B29/06 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C03C3/06 , C03B19/095 , C03B2201/03 , C30B15/10 , C30B29/06 , Y10S117/90 , Y10T117/1032 , Y10T117/1052
摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.
摘要翻译：本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中，通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末中空旋转模具的内表面。该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化二氧化硅粉末层外面。

5. 发明授权

US09650168B2 Thread material cutting device 有权
公开(公告)号：US09650168B2
公开(公告)日：2017-05-16
申请号：US14352971
申请日：2011-10-31
申请人： Tomohiro Takemoto , Nobuhito Yamauchi , Takeo Yamamura , Mitsunori Saitoh , Yoshiyuki Tsuji
发明人： Tomohiro Takemoto , Nobuhito Yamauchi , Takeo Yamamura , Mitsunori Saitoh , Yoshiyuki Tsuji
IPC分类号： B65B29/04 , B65D85/812 , B32B37/02 , B32B38/04 , B65C7/00 , B65B9/20 , B32B38/00 , B29C65/08 , B65D85/808 , B29C65/02
CPC分类号： B65C7/00 , B29C65/02 , B29C65/08 , B32B37/02 , B32B38/004 , B32B38/1875 , B65B9/2056 , B65B29/04 , B65D85/808 , B65D85/812 , Y10T156/1077 , Y10T156/1097 , Y10T156/1326 , Y10T156/133 , Y10T156/1343 , Y10T156/1378
摘要： A thread material cutting device is provided which is used in an extraction bag sheet manufacturing apparatus. The thread material cutting device has tension application means such as a pressing plate configured to engage with the thread material placed between adjacent tags so as to apply tension to the thread material. While the welding means is press-heating the thread material onto the tags, the tension application means applies tension to the thread material so as to cut the thread material.

6. 发明授权

US08776481B2 Packing-packaging apparatus 有权
标题翻译：包装包装设备
公开(公告)号：US08776481B2
公开(公告)日：2014-07-15
申请号：US12920746
申请日：2009-01-15
申请人： Fumio Miyahara , Yoshiyuki Tsuji , Tomohiro Takemoto
发明人： Fumio Miyahara , Yoshiyuki Tsuji , Tomohiro Takemoto
IPC分类号： B65B1/06
CPC分类号： B65B29/02 , B65B9/20 , B65B9/2056 , B65B29/04 , B65B37/12 , B65B39/001
摘要： A packing-packaging machine includes: sheet feeding means; a horizontal bonding unit for forming a bag body by forming horizontal bonding on a tubular body at predetermined intervals; and an object dispensing unit for dispensing an object to be packaged to the bag body during a repetition of the formation of the horizontal bonding. The object dispensing unit includes a shutter for opening and closing a falling path of a predetermined amount of the object into the bag body. The shutter is opened and closed such that the predetermined amount of the object and another predetermined amount of the object fall with a spacing therebetween, and that before the horizontal bonding is formed on the bag body packed with the predetermined amount of the object which has been dropped during opening-closing operation of the shutter, the other predetermined amount of the object for a next bag body starts falling.
摘要翻译：包装机包括：送纸装置; 水平接合单元，用于通过在管状体上以预定间隔形成水平结合来形成袋体; 以及物体分配单元，用于在重复形成水平粘合期间将待包装物体分配到袋体。物体分配单元包括用于打开和关闭预定量的物体到袋体中的下落路径的挡板。快门被打开和关闭，使得预定量的物体和另一个预定量的物体以其间隔开而下降，并且在水平接合之前形成在装有预定量的物体的袋体上在快门的打开 - 关闭操作期间下降，另一个预定量的下一个袋体的物体开始下降。

7. 发明申请

US20110165028A1 METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES 失效
标题翻译：纯化二氧化硅颗粒，净化剂和纯化二氧化硅颗粒的方法
公开(公告)号：US20110165028A1
公开(公告)日：2011-07-07
申请号：US13047433
申请日：2011-03-14
申请人： Minoru KANDA , Yoshiyuki Tsuji
发明人： Minoru KANDA , Yoshiyuki Tsuji
IPC分类号： B01J8/18 , B01J19/08
CPC分类号： C01B33/18 , B01J8/1836 , B01J8/42 , B01J2208/00407 , B01J2208/00415 , B03C1/288 , B03C1/30 , B03C1/32 , B03C2201/16 , B03C2201/18 , C03C1/02
摘要： [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder.[Means for Solving the Problems] A purification method of a silica powder comprises: making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of 1000° C. or more.
摘要翻译： [问题]提供一种具有优异的净化效果的处理方法，其中可以在短时间内除去二氧化硅粉末中的高离子性的杂质，其装置和纯化的二氧化硅粉末。解决问题的方法二氧化硅粉末的净化方法包括：将二氧化硅粉末制成流体状态; 在高温下将纯化气体以流体状态与二氧化硅粉末接触; 从而除去二氧化硅粉末的杂质成分。在该方法中，处于流体状态的二氧化硅粉末位于磁场区域中。此外，二氧化硅粉末与纯化气体接触，同时通过二氧化硅粉末移动产生的电场向二氧化硅粉末施加电压。优选地，处于流体状态的二氧化硅粉末位于10高斯或更高的磁性区域中，并且在1000℃以上的温度下与净化气体接触。

8. 发明授权

US07695787B2 Silica glass crucible 有权
标题翻译：二氧化硅玻璃坩埚
公开(公告)号：US07695787B2
公开(公告)日：2010-04-13
申请号：US10801683
申请日：2004-03-17
申请人： Yoshiyuki Tsuji , Toshio Tsujimoto
发明人： Yoshiyuki Tsuji , Toshio Tsujimoto
IPC分类号： B44C1/22 , C04B35/00 , F16L9/10 , F27B14/10
CPC分类号： C03C19/00 , B24C1/08 , C03C15/00 , C30B15/10 , Y10T117/1032 , Y10T117/108 , Y10T428/13 , Y10T428/131
摘要： To provide a silica glass crucible, wherein there are no problems of generating a sinking and buckling when said crucible is used for pulling up silicon single crystal at a high temperature. The silica glass crucible used for pulling up the silicon single crystal, wherein at least an outer surface of a wall part of the crucible is covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. Preferably, said fine groves are formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500 degree C. is more than 0.6.
摘要翻译：为了提供一种二氧化硅玻璃坩埚，其中当在高温下使用所述坩埚拉起硅单晶时，不存在产生下沉和翘曲的问题。用于提升硅单晶的二氧化硅玻璃坩埚，其中至少坩埚的壁部的外表面被细长的小于200μm，宽度小于30μm的细槽和深度大于3μm至小于30μm。优选地，通过进行喷砂处理和氢氟酸蚀刻而形成所述细小花纹，并且存在于坩埚的外表面的10％以上，坩埚的外表面的滑动摩擦系数为碳在1500摄氏度，大于0.6。

9. 发明授权

US08506890B2 Method for purification of silica particles, purifier, and purified silica particles 失效
标题翻译：纯化二氧化硅颗粒，净化剂和纯化二氧化硅颗粒的方法
公开(公告)号：US08506890B2
公开(公告)日：2013-08-13
申请号：US13047433
申请日：2011-03-14
申请人： Minoru Kanda , Yoshiyuki Tsuji
发明人： Minoru Kanda , Yoshiyuki Tsuji
IPC分类号： B01J8/24 , B01J19/08
CPC分类号： C01B33/18 , B01J8/1836 , B01J8/42 , B01J2208/00407 , B01J2208/00415 , B03C1/288 , B03C1/30 , B03C1/32 , B03C2201/16 , B03C2201/18 , C03C1/02
摘要： To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, an apparatus thereof, and a purified silica powder. A purification method of a silica powder comprises making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of I000° C. or more.
摘要翻译：为了提供具有优异的纯化效果的处理方法，其中可以在短时间内除去二氧化硅粉末中的高离子性的杂质，其装置和纯化的二氧化硅粉末。二氧化硅粉末的纯化方法包括将二氧化硅粉末制成流体状态; 在高温下将纯化气体以流体状态与二氧化硅粉末接触; 从而除去二氧化硅粉末的杂质成分。在该方法中，处于流体状态的二氧化硅粉末位于磁场区域中。此外，二氧化硅粉末与纯化气体接触，同时通过二氧化硅粉末移动产生的电场向二氧化硅粉末施加电压。优选地，处于流体状态的二氧化硅粉末位于10高斯或更高的磁性区域中，并且在1000℃以上的温度下与净化气体接触。

10. 发明申请

US20110165054A1 METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES 审中-公开
公开(公告)号：US20110165054A1
公开(公告)日：2011-07-07
申请号：US13047401
申请日：2011-03-14
申请人： Minoru KANDA , Yoshiyuki Tsuji
发明人： Minoru KANDA , Yoshiyuki Tsuji
IPC分类号： C01B33/12 , C25B5/00
CPC分类号： C01B33/18 , B01J8/1836 , B01J8/42 , B01J2208/00407 , B01J2208/00415 , B03C1/288 , B03C1/30 , B03C1/32 , B03C2201/16 , B03C2201/18 , C03C1/02
摘要： [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder.[Means for Solving the Problems] A purification method of a silica powder comprises: making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of 1000° C. or more.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式