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1. 发明授权

US5527417A Photo-assisted CVD apparatus 失效
标题翻译：光辅助CVD装置
公开(公告)号：US5527417A
公开(公告)日：1996-06-18
申请号：US446290
申请日：1995-05-22
申请人： Yoshinori Iida , Akihiko Furukawa , Tetsuya Yamaguchi , Michio Sasaki , Hisanori Ihara , Hidetoshi Nozaki , Takaaki Kamimura
发明人： Yoshinori Iida , Akihiko Furukawa , Tetsuya Yamaguchi , Michio Sasaki , Hisanori Ihara , Hidetoshi Nozaki , Takaaki Kamimura
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23F1/02
CPC分类号： C23C16/4405 , C23C16/482 , C23C16/488
摘要： A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.
摘要翻译：一种光辅助CVD装置，包括用于存储基板的反应室，用于将源气体供给到反应室中的入口端口，用于在进入反应室的源气体上照射光的光源，以在辐射时分解源气体由此在基板上沉积膜，将用于向反应室供给蚀刻气体的入口端口和放电电极，该放电电极布置在基板上方并且具有围绕基板上方的空间的激励蚀刻气体。

2. 发明授权

US06674470B1 MOS-type solid state imaging device with high sensitivity 失效
标题翻译：高灵敏度的MOS型固态成像装置
公开(公告)号：US06674470B1
公开(公告)日：2004-01-06
申请号：US08933975
申请日：1997-09-19
申请人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
发明人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H04N5/3765 , H04N5/3575 , H04N5/37457
摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.
摘要翻译：固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管，用于选择单元格。读出晶体管形成在半导体衬底中的第一器件区域中。复位晶体管形成在半导体衬底中的第二器件区域中。读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

3. 发明授权

US06215139B1 Solid-state image sensor and manufacturing method thereof 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US06215139B1
公开(公告)日：2001-04-10
申请号：US09129697
申请日：1998-08-05
申请人： Yoshinori Iida , Hidetoshi Nozaki
发明人： Yoshinori Iida , Hidetoshi Nozaki
IPC分类号： H01L31062
CPC分类号： H01L27/14683 , H01L27/14609
摘要： An amplifying solid-state image sensor includes a semiconductor substrate, and a plurality of unit pixels arranged on the semiconductor substrate in a two-dimensional manner, in which each of the plurality of unit pixels includes a photodiode for performing the photoelectric conversion, a storage diode for storing electric signal charge obtained by the photodiode, an amplifying transistor for amplifying the electric signal charge stored in the storage diode, and a signal reading section for reading a signal voltage from the amplifying transistor, and in which each of the plurality of unit pixels has a first active region and a second active region in which the second active region has the same conductivity type as that of the semiconductor substrate and an impurity concentration higher than that of the semiconductor substrate, the photodiode in each of the unit pixels is formed in the first active region, and the amplifying transistor is formed in the second region. With this configuration, it is preferable the photodiode has near a surface thereof a pinned photodiode structure in which a photodiode surface high-concentrated impurity region is formed.
摘要翻译：放大固态图像传感器包括半导体衬底和以二维方式布置在半导体衬底上的多个单位像素，其中多个单位像素中的每一个包括用于进行光电转换的光电二极管，存储器用于存储由光电二极管获得的电信号电荷的二极管，用于放大存储在存储二极管中的电信号电荷的放大晶体管，以及用于从放大晶体管读取信号电压的信号读取部分，其中多个单元像素具有第一有源区和第二有源区，其中第二有源区具有与半导体衬底的导电类型相同的导电类型，并且杂质浓度高于半导体衬底的杂质浓度，形成每个单位像素中的光电二极管在第一有源区中，放大晶体管形成在第二区域中。根据该结构，光电二极管的表面附近形成有光电二极管表面的高浓度杂质区域的钉扎光电二极管结构，

4. 发明授权

US4895107A Photo chemical reaction apparatus 失效
标题翻译：照相化学反应装置
公开(公告)号：US4895107A
公开(公告)日：1990-01-23
申请号：US215175
申请日：1988-07-05
申请人： Kensaku Yano , Akihiko Furukawa , Ryohei Miyagawa , Yoshinori Iida
发明人： Kensaku Yano , Akihiko Furukawa , Ryohei Miyagawa , Yoshinori Iida
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23C16/54 , H01L21/263 , H01L21/31
CPC分类号： C23C16/4409 , C23C16/482 , C23C16/488 , C23C16/54
摘要： A photo chemical reaction apparatus comprises a vacuum container partitioned into a reaction chamber and a carrier chamber by use of partition board. The partition board has an opening into which a carrier tray can be detachably inserted so as to cause the rection chamber to be hermetically sealed. The carrier tray has a substrate holder opposite to a light-penetrating window. A reaction gas flows between this window and a substrate to be processed mounted on the substrate holder.
摘要翻译：光化学反应装置包括使用分隔板分隔成反应室的真空容器和载体室。隔板具有开口，承载托盘可以可拆卸地插入该开口中，以使得反作用气室被密封。托盘具有与透光窗相对的基板保持架。反应气体在该窗口和待加工的基板之间流动，安装在基板保持器上。

5. 发明授权

US08716822B2 Back-illuminated type solid-state imaging device and method of manufacturing the same 有权
标题翻译：背照式固体摄像装置及其制造方法
公开(公告)号：US08716822B2
公开(公告)日：2014-05-06
申请号：US13363801
申请日：2012-02-01
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
摘要翻译：根据实施例的固态成像装置包括：布置在第一半导体层的第一面上的多个像素，每个像素包括光电转换元件，其转换通过第一半导体层的第二面进入的光所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结，以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域，彼此分离并形成在像素之间，每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层，以及折射率低于折射率的绝缘膜第二半导体层覆盖第二半导体层。

6. 发明申请

US20110175187A1 SOLID-STATE IMAGING DEVICE 失效
标题翻译：固态成像装置
公开(公告)号：US20110175187A1
公开(公告)日：2011-07-21
申请号：US12875534
申请日：2010-09-03
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14629
摘要： Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：光电转换单元，其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层，将入射到半导体衬底的第一表面的入射光转换为信号电荷，并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括：固定电荷膜，其保持作为非信号电荷的固定电荷，并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域，并且存储非信号电荷的空穴。

7. 发明申请

US20110155890A1 SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20110155890A1
公开(公告)日：2011-06-30
申请号：US12958873
申请日：2010-12-02
申请人： Yoshitaka Egawa , Yoshinori Iida
发明人： Yoshitaka Egawa , Yoshinori Iida
IPC分类号： H01L27/146
CPC分类号： H04N5/3575 , H04N5/3745 , H04N5/378
摘要： According to one embodiments, a pixel array unit in which pixels PC are arranged in a matrix manner, a sample-and-hold signal conversion circuit that detects a signal component of each of the pixels PC in a CDS, and a timing control circuit that controls to sample a reference level of an analog CDS after a reference level of a digital CDS is converted into a digital value are included.
摘要翻译：根据一个实施例，其中以矩阵方式布置像素PC的像素阵列单元，检测CDS中的每个像素PC的信号分量的采样保持信号转换电路和定时控制电路，其中，包括在将数字CDS的参考电平转换为数字值之后，对模拟CDS的参考电平进行采样的控制。

8. 发明授权

US07361899B2 Infrared sensor, infrared camera, method of driving infrared sensor, and method of driving infrared camera 有权
标题翻译：红外传感器，红外摄像机，红外线传感器的驱动方法以及红外摄像机的驱动方法
公开(公告)号：US07361899B2
公开(公告)日：2008-04-22
申请号：US11532771
申请日：2006-09-18
申请人： Yoshinori Iida
发明人： Yoshinori Iida
IPC分类号： G01J5/20 , H01L27/14 , H01L31/00
CPC分类号： G01J1/46 , G01J5/24 , H01L27/14649 , H04N5/33
摘要： An infrared sensor includes an imaging area including infrared detection pixels; row selection lines; a signal line; a row selection circuit generating a column voltage in the signal line; a column amplifier including a first amplifying transistor which generates an amplification voltage obtained by amplifying the column voltage and a first clamp circuit which holds threshold voltage information of the first amplifying transistor in its gate; a removing circuit including a second amplifying transistor and a second clamp circuit which holds threshold voltage information of the second amplifying transistor in its gate, the removing circuit being connected to the column amplifier to remove a bias component from the amplification voltage; and a reading circuit reading an output voltage from the column amplifier, the output voltage is obtained by excluding at least the bias component from the amplification voltage.
摘要翻译：红外线传感器包括：包含红外线检测像素的摄像区域; 行选择行; 信号线在所述信号线中产生列电压的行选择电路; 列放大器，包括产生通过放大列电压而获得的放大电压的第一放大晶体管和保持其栅极中第一放大晶体管的阈值电压信息的第一钳位电路; 去除电路，包括第二放大晶体管和第二钳位电路，其在其栅极中保持第二放大晶体管的阈值电压信息，去除电路连接到列放大器以从放大电压去除偏置分量; 以及从列放大器读取输出电压的读取电路，通过从放大电压中至少排除偏置分量来获得输出电压。

9. 发明申请

US20070145274A1 INFRARED SENSOR, INFRARED CAMERA, METHOD OF DRIVING INFRARED SENSOR, AND METHOD OF DRIVING INFRARED CAMERA 有权
标题翻译：红外传感器，红外摄像机，驱动红外传感器的方法和驱动红外摄像机的方法
公开(公告)号：US20070145274A1
公开(公告)日：2007-06-28
申请号：US11532771
申请日：2006-09-18
申请人： Yoshinori Iida
发明人： Yoshinori Iida
IPC分类号： H01L27/14 , G01T1/24 , G01J5/20 , H01L31/00
CPC分类号： G01J1/46 , G01J5/24 , H01L27/14649 , H04N5/33
摘要： An infrared sensor includes an imaging area including infrared detection pixels; row selection lines; a signal line; a row selection circuit generating a column voltage in the signal line; a column amplifier including a first amplifying transistor which generates an amplification voltage obtained by amplifying the column voltage and a first clamp circuit which holds threshold voltage information of the first amplifying transistor in its gate; a removing circuit including a second amplifying transistor and a second clamp circuit which holds threshold voltage information of the second amplifying transistor in its gate, the removing circuit being connected to the column amplifier to remove a bias component from the amplification voltage; and a reading circuit reading an output voltage from the column amplifier, the output voltage is obtained by excluding at least the bias component from the amplification voltage.
摘要翻译：红外线传感器包括：包含红外线检测像素的摄像区域; 行选择行; 信号线在所述信号线中产生列电压的行选择电路; 列放大器，包括产生通过放大列电压而获得的放大电压的第一放大晶体管和保持其栅极中第一放大晶体管的阈值电压信息的第一钳位电路; 去除电路，包括第二放大晶体管和第二钳位电路，其在其栅极中保持第二放大晶体管的阈值电压信息，去除电路连接到列放大器以从放大电压去除偏置分量; 以及从列放大器读取输出电压的读取电路，通过从放大电压中至少排除偏置分量来获得输出电压。

10. 发明申请

US20070028695A1 OPTO-ACOUSTOELECTRIC DEVICE AND METHODS FOR ANALYZING MECHANICAL VIBRATION AND SOUND 审中-公开
标题翻译：用于分析机械振动和声音的光电装置和方法
公开(公告)号：US20070028695A1
公开(公告)日：2007-02-08
申请号：US11534541
申请日：2006-09-22
申请人： Kazuhiro Suzuki , Hideyuki Funaki , Keitaro Shigenaka , Tomio Ono , Tadashi Sakai , Yujiro Naruse , Yoshinori Iida , Ikuo Fujiwara
发明人： Kazuhiro Suzuki , Hideyuki Funaki , Keitaro Shigenaka , Tomio Ono , Tadashi Sakai , Yujiro Naruse , Yoshinori Iida , Ikuo Fujiwara
IPC分类号： G01H9/00
CPC分类号： G01H9/00
摘要： An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.
摘要翻译：光声装置包括具有衍射光栅的光阑，所述光阑易受外力驱动的振动; 定向成照射衍射光栅的光源; 以及光检测器，被配置为检测由衍射光栅衍射的光并将检测到的光转换成电信号。电信号对应于隔膜中振动的位移。

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