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1. 发明授权

US08338901B2 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US08338901B2
公开(公告)日：2012-12-25
申请号：US12875534
申请日：2010-09-03
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14629
摘要： Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：光电转换单元，其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层，将入射到半导体衬底的第一表面的入射光转换为信号电荷，并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括：固定电荷膜，其保持作为非信号电荷的固定电荷，并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域，并且存储非信号电荷的空穴。

2. 发明申请

US20120133011A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20120133011A1
公开(公告)日：2012-05-31
申请号：US13363801
申请日：2012-02-01
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
摘要翻译：根据实施例的固态成像装置包括：布置在第一半导体层的第一面上的多个像素，每个像素包括光电转换元件，其转换通过第一半导体层的第二面进入的光所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结，以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域，彼此分离并形成在像素之间，每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层，以及折射率低于折射率的绝缘膜第二半导体层覆盖第二半导体层。

3. 发明申请

US20110156186A1 SOLID-STATE IMAGING DEVICE 失效
标题翻译：固态成像装置
公开(公告)号：US20110156186A1
公开(公告)日：2011-06-30
申请号：US12875546
申请日：2010-09-03
申请人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
发明人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
IPC分类号： H01L31/0232
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：设置在半导体衬底上的多个像素，每个像素具有半导体区域，该半导体区域将来自半导体衬底的第一面侧的入射光转换成信号电荷并将其存储信号充电读出电路，设置在与第一面相反一侧的第二面的一侧，并读出存储在像素中的信号电荷; 以及设置在所述半导体衬底中的相邻像素之间的像素分离结构，所述像素分离结构包括埋置在从所述第一面延伸的沟槽中的叠层膜，所述堆叠膜包括沿侧面设置的第一绝缘膜和底部并且设置在沟槽中的固定电荷膜以覆盖第一绝缘膜并且保持作为非信号电荷的固定电荷。

4. 发明授权

US08716822B2 Back-illuminated type solid-state imaging device and method of manufacturing the same 有权
标题翻译：背照式固体摄像装置及其制造方法
公开(公告)号：US08716822B2
公开(公告)日：2014-05-06
申请号：US13363801
申请日：2012-02-01
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
摘要翻译：根据实施例的固态成像装置包括：布置在第一半导体层的第一面上的多个像素，每个像素包括光电转换元件，其转换通过第一半导体层的第二面进入的光所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结，以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域，彼此分离并形成在像素之间，每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层，以及折射率低于折射率的绝缘膜第二半导体层覆盖第二半导体层。

5. 发明申请

US20110175187A1 SOLID-STATE IMAGING DEVICE 失效
标题翻译：固态成像装置
公开(公告)号：US20110175187A1
公开(公告)日：2011-07-21
申请号：US12875534
申请日：2010-09-03
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14629
摘要： Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：光电转换单元，其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层，将入射到半导体衬底的第一表面的入射光转换为信号电荷，并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括：固定电荷膜，其保持作为非信号电荷的固定电荷，并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域，并且存储非信号电荷的空穴。

6. 发明授权

US08445950B2 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US08445950B2
公开(公告)日：2013-05-21
申请号：US12875546
申请日：2010-09-03
申请人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
发明人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：设置在半导体衬底上的多个像素，每个像素具有半导体区域，该半导体区域将来自半导体衬底的第一面侧的入射光转换成信号电荷并将其存储信号充电读出电路，设置在与第一面相反一侧的第二面的一侧，并读出存储在像素中的信号电荷; 以及设置在所述半导体衬底中的相邻像素之间的像素分离结构，所述像素分离结构包括埋置在从所述第一面延伸的沟槽中的叠层膜，所述堆叠膜包括沿侧面设置的第一绝缘膜和底部并且设置在沟槽中的固定电荷膜以覆盖第一绝缘膜并且保持作为非信号电荷的固定电荷。

7. 发明授权

US08742527B2 Solid state imaging device, solid state imaging element, portable information terminal device and method for manufacturing the solid state imaging element 有权
标题翻译：固态成像装置，固态成像元件，便携式信息终端装置以及固态成像元件的制造方法
公开(公告)号：US08742527B2
公开(公告)日：2014-06-03
申请号：US13416290
申请日：2012-03-09
申请人： Kazuhiro Suzuki , Risako Ueno , Honam Kwon , Mitsuyoshi Kobayashi , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Risako Ueno , Honam Kwon , Mitsuyoshi Kobayashi , Hideyuki Funaki
IPC分类号： H01L21/00 , H01L31/0232
CPC分类号： H01L27/14605 , H01L24/32 , H01L27/14618 , H01L27/14625 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： According to one embodiment, a solid state imaging device includes a sensor substrate curved such that an upper face having a plurality of pixels formed is recessed and an imaging lens provided on the upper face side.
摘要翻译：根据一个实施例，固态成像装置包括弯曲的传感器基板，使得形成有多个像素的上表面凹陷，并且设置在上表面侧的成像透镜。

8. 发明授权

US08415622B2 Infrared imaging element 有权
标题翻译：红外成像元件
公开(公告)号：US08415622B2
公开(公告)日：2013-04-09
申请号：US13414941
申请日：2012-03-08
申请人： Kazuhiro Suzuki , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
发明人： Kazuhiro Suzuki , Hiroto Honda , Ikuo Fujiwara , Hideyuki Funaki , Hitoshi Yagi , Keita Sasaki , Honam Kwon , Koichi Ishii , Masako Ogata , Risako Ueno
IPC分类号： H01L25/00
CPC分类号： H01L27/14618 , G01J5/024 , H01L27/1461 , H01L27/14636 , H01L27/1464 , H01L27/14649 , H01L2924/0002 , H01L2924/00
摘要： An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要翻译：根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热，由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。在第二基板和红外线检测单元之间形成第二空腔。

9. 发明申请

US20120228496A1 UNCOOLED INFRARED IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：未经处理的红外成像元件及其制造方法
公开(公告)号：US20120228496A1
公开(公告)日：2012-09-13
申请号：US13235388
申请日：2011-09-18
申请人： Masako OGATA , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
发明人： Masako OGATA , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14649 , H01L27/14632 , H01L27/14687
摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.
摘要翻译：非制冷红外成像元件包括像素区域，器件区域和支撑衬底。像素区域包括热敏像素。热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。驱动电路驱动热敏像素。读出电路检测热敏像素的信号。支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

10. 发明申请

US20120056291A1 IMAGING DEVICE, IMAGING MODULE AND METHOD FOR MANUFACTURING IMAGING DEVICE 有权
标题翻译：成像装置，成像模块和制造成像装置的方法
公开(公告)号：US20120056291A1
公开(公告)日：2012-03-08
申请号：US13051413
申请日：2011-03-18
申请人： Kazuhiro Suzuki , Risako Ueno , Honam Kwon , Koichi Ishii , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Risako Ueno , Honam Kwon , Koichi Ishii , Hideyuki Funaki
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14618 , H01L27/14649 , H01L2224/13
摘要： According to one embodiment, an imaging device includes a substrate, a photodetecting portion, a circuit portion and a through interconnect. The substrate has a first major surface, a second major surface on a side opposite to the first major surface, a recess portion provided on the first major surface and retreated in a first direction going from the first major surface to the second major surface, and a through hole communicating with the first major surface and the second major surface and extending in the first direction. The photodetecting portion is provided above the recess portion and away from the substrate. The circuit portion is electrically connected to the photodetecting portion and provided on the first major surface. The through interconnect is electrically connected to the circuit portion and provided inside the through hole. The recess portion has a first inclined surface. The through hole has a second inclined surface.
摘要翻译：根据一个实施例，成像装置包括基板，光电检测部分，电路部分和通孔互连。基板具有第一主表面，与第一主表面相对的一侧的第二主表面，设置在第一主表面上并沿着从第一主表面到第二主表面的第一方向退回的凹部，以及与所述第一主表面和所述第二主表面连通并且沿所述第一方向延伸的通孔。光电检测部分设置在凹部的上方并远离基板。电路部分电连接到光电检测部分并设置在第一主表面上。通孔互连电连接到电路部分并设置在通孔的内部。凹部具有第一倾斜面。通孔具有第二倾斜面。

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