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1. 发明授权

US08338901B2 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US08338901B2
公开(公告)日：2012-12-25
申请号：US12875534
申请日：2010-09-03
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14629
摘要： Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：光电转换单元，其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层，将入射到半导体衬底的第一表面的入射光转换为信号电荷，并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括：固定电荷膜，其保持作为非信号电荷的固定电荷，并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域，并且存储非信号电荷的空穴。

2. 发明申请

US20110175187A1 SOLID-STATE IMAGING DEVICE 失效
标题翻译：固态成像装置
公开(公告)号：US20110175187A1
公开(公告)日：2011-07-21
申请号：US12875534
申请日：2010-09-03
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14629
摘要： Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：光电转换单元，其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层，将入射到半导体衬底的第一表面的入射光转换为信号电荷，并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括：固定电荷膜，其保持作为非信号电荷的固定电荷，并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域，并且存储非信号电荷的空穴。

3. 发明申请

US20120133011A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20120133011A1
公开(公告)日：2012-05-31
申请号：US13363801
申请日：2012-02-01
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
摘要翻译：根据实施例的固态成像装置包括：布置在第一半导体层的第一面上的多个像素，每个像素包括光电转换元件，其转换通过第一半导体层的第二面进入的光所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结，以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域，彼此分离并形成在像素之间，每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层，以及折射率低于折射率的绝缘膜第二半导体层覆盖第二半导体层。

4. 发明申请

US20110156186A1 SOLID-STATE IMAGING DEVICE 失效
标题翻译：固态成像装置
公开(公告)号：US20110156186A1
公开(公告)日：2011-06-30
申请号：US12875546
申请日：2010-09-03
申请人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
发明人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
IPC分类号： H01L31/0232
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：设置在半导体衬底上的多个像素，每个像素具有半导体区域，该半导体区域将来自半导体衬底的第一面侧的入射光转换成信号电荷并将其存储信号充电读出电路，设置在与第一面相反一侧的第二面的一侧，并读出存储在像素中的信号电荷; 以及设置在所述半导体衬底中的相邻像素之间的像素分离结构，所述像素分离结构包括埋置在从所述第一面延伸的沟槽中的叠层膜，所述堆叠膜包括沿侧面设置的第一绝缘膜和底部并且设置在沟槽中的固定电荷膜以覆盖第一绝缘膜并且保持作为非信号电荷的固定电荷。

5. 发明授权

US08716822B2 Back-illuminated type solid-state imaging device and method of manufacturing the same 有权
标题翻译：背照式固体摄像装置及其制造方法
公开(公告)号：US08716822B2
公开(公告)日：2014-05-06
申请号：US13363801
申请日：2012-02-01
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
摘要翻译：根据实施例的固态成像装置包括：布置在第一半导体层的第一面上的多个像素，每个像素包括光电转换元件，其转换通过第一半导体层的第二面进入的光所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结，以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域，彼此分离并形成在像素之间，每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层，以及折射率低于折射率的绝缘膜第二半导体层覆盖第二半导体层。

6. 发明授权

US08445950B2 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US08445950B2
公开(公告)日：2013-05-21
申请号：US12875546
申请日：2010-09-03
申请人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
发明人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：设置在半导体衬底上的多个像素，每个像素具有半导体区域，该半导体区域将来自半导体衬底的第一面侧的入射光转换成信号电荷并将其存储信号充电读出电路，设置在与第一面相反一侧的第二面的一侧，并读出存储在像素中的信号电荷; 以及设置在所述半导体衬底中的相邻像素之间的像素分离结构，所述像素分离结构包括埋置在从所述第一面延伸的沟槽中的叠层膜，所述堆叠膜包括沿侧面设置的第一绝缘膜和底部并且设置在沟槽中的固定电荷膜以覆盖第一绝缘膜并且保持作为非信号电荷的固定电荷。

7. 发明申请

US20120050589A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20120050589A1
公开(公告)日：2012-03-01
申请号：US13039502
申请日：2011-03-03
申请人： Risako Ueno , Yoshinori Iida , Hideyuki Funaki
发明人： Risako Ueno , Yoshinori Iida , Hideyuki Funaki
IPC分类号： H04N9/083
CPC分类号： H04N9/045
摘要： According to an embodiment, a solid-state imaging device includes: an imaging element formed on a semiconductor substrate; a first optical system configured to focus an image of a subject on an imaging plane; a second optical system including a microlens array including a plurality of microlenses corresponding to the pixel blocks, and re-focusing the image of the imaging plane onto the pixel blocks corresponding to the respective microlenses; a first filter placed on the second optical system, and including a plurality of first color filters corresponding to the microlenses; and a second filter placed on the imaging element, and including a plurality of second color filters corresponding to the first color filters of the first filter. The first and second filters are designed so that the first and second color filters deviate to a periphery of the imaging area, the deviation becoming larger toward the periphery of the imaging area.
摘要翻译：根据实施例，固态成像装置包括：形成在半导体衬底上的成像元件; 配置成将被摄体的图像聚焦在成像平面上的第一光学系统; 包括微透镜阵列的第二光学系统，所述微透镜阵列包括对应于所述像素块的多个微透镜，以及将所述成像平面的图像重新聚焦到与所述各个微透镜相对应的像素块上; 放置在第二光学系统上的第一滤光器，并且包括对应于微透镜的多个第一滤色器; 以及放置在成像元件上的第二滤光器，并且包括与第一滤光器的第一滤色器相对应的多个第二滤色器。第一滤波器和第二滤波器被设计成使得第一和第二滤色器偏离成像区域的周边，偏离朝向成像区域的周围变大。

8. 发明授权

US08711267B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08711267B2
公开(公告)日：2014-04-29
申请号：US13039502
申请日：2011-03-03
申请人： Risako Ueno , Yoshinori Iida , Hideyuki Funaki
发明人： Risako Ueno , Yoshinori Iida , Hideyuki Funaki
IPC分类号： H04N5/225 , G02B13/16
CPC分类号： H04N9/045
摘要： According to an embodiment, a solid-state imaging device includes: an imaging element formed on a semiconductor substrate; a first optical system configured to focus an image of a subject on an imaging plane; a second optical system including a microlens array including a plurality of microlenses corresponding to the pixel blocks, and re-focusing the image of the imaging plane onto the pixel blocks corresponding to the respective microlenses; a first filter placed on the second optical system, and including a plurality of first color filters corresponding to the microlenses; and a second filter placed on the imaging element, and including a plurality of second color filters corresponding to the first color filters of the first filter. The first and second filters are designed so that the first and second color filters deviate to a periphery of the imaging area, the deviation becoming larger toward the periphery of the imaging area.
摘要翻译：根据实施例，固态成像装置包括：形成在半导体衬底上的成像元件; 配置成将被摄体的图像聚焦在成像平面上的第一光学系统; 包括微透镜阵列的第二光学系统，所述微透镜阵列包括对应于所述像素块的多个微透镜，以及将所述成像平面的图像重新聚焦到与所述各个微透镜相对应的像素块上; 放置在第二光学系统上的第一滤光器，并且包括对应于微透镜的多个第一滤色器; 以及放置在成像元件上的第二滤光器，并且包括与第一滤光器的第一滤色器相对应的多个第二滤色器。第一滤波器和第二滤波器被设计成使得第一和第二滤色器偏离成像区域的周边，偏离朝向成像区域的周围变大。

9. 发明授权

US08604581B2 Solid-state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US08604581B2
公开(公告)日：2013-12-10
申请号：US12211427
申请日：2008-09-16
申请人： Risako Ueno , Hideyuki Funaki , Yoshinori Iida , Hiroto Honda
发明人： Risako Ueno , Hideyuki Funaki , Yoshinori Iida , Hiroto Honda
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14605 , H01L27/1464
摘要： A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.
摘要翻译：固体摄像装置具有将从基板的第一面入射的光转换成信号电荷并积累信号电荷的光电转换元件，形成在与第一表面相反的第二表面侧的晶体管读取由光电转换元件积累的信号电荷，粘贴到基板的第二表面的支撑基板和形成在基板的第一表面上的抗反射涂层，其中基板的第一表面包括弯曲表面或与第二表面形成规定角度的倾斜表面。

10. 发明申请

US20130075587A1 SOLID STATE IMAGING DEVICE, PORTABLE INFORMATION TERMINAL DEVICE AND METHOD FOR MANUFACTURING SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置，便携式信息终端装置和制造固态成像装置的方法
公开(公告)号：US20130075587A1
公开(公告)日：2013-03-28
申请号：US13416036
申请日：2012-03-09
申请人： Kazuhiro SUZUKI , Risako Ueno , Honam Kwon , Mitsuyoshi Kobayashi , Hideyuki Funaki
发明人： Kazuhiro SUZUKI , Risako Ueno , Honam Kwon , Mitsuyoshi Kobayashi , Hideyuki Funaki
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14618 , H01L24/32 , H01L27/14627 , H01L27/14685 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.
摘要翻译：根据一个实施例，固态成像装置包括具有形成在上表面上的多个像素的传感器基板，形成有多个微透镜的微透镜阵列基板和一端连接到微透镜之间的区域的连接柱微透镜阵列基板并且另一端结合到上表面。

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