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1. 发明授权

US06709730B2 Method of making diamond product and diamond product 失效
标题翻译：制造钻石产品和钻石产品的方法
公开(公告)号：US06709730B2
公开(公告)日：2004-03-23
申请号：US09995854
申请日：2001-11-29
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： B32B900
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译：制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

2. 发明授权

US07534360B2 Method of making diamond product and diamond product 失效
公开(公告)号：US07534360B2
公开(公告)日：2009-05-19
申请号：US10774417
申请日：2004-02-10
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： C23F1/00
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

3. 发明授权

US07147918B2 Microfabricated diamond element and method of fabricating microfabricated diamond element 失效
标题翻译：微晶金刚石元素及其制造方法
公开(公告)号：US07147918B2
公开(公告)日：2006-12-12
申请号：US10661591
申请日：2003-09-15
申请人： Yoshiki Nishibayashi , Yutaka Ando , Takahiro Imai
发明人： Yoshiki Nishibayashi , Yutaka Ando , Takahiro Imai
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/34 , Y10T428/30
摘要： A diamond electron emission element is provided with a substrate, and a plurality of quadrangular columns (microscopic projections) composed of diamond and with side faces of flat faces, which are arranged at equal intervals on the substrate. A top end face (horizontal section) is of a quadrangular shape having a length of long sides being a [nm] and a length of short sides being ka [nm], and a thin film of SiO2 is formed on a side face on the short-edge side. The length a [nm] of long sides and the length ka [nm] of short sides satisfy relational expressions of Formulae (1) and (2) below. C1=2a√{square root over (1+k2)} (1) nλ=C1 (2) C1: a distance [nm] of a lap in a situation where light generated inside each quadrangular column goes around on a specific circuit while being reflected on the side faces of the quadrangular column, n: an arbitrary positive integer, and λ: an emission peak wavelength λ [nm] of the diamond making the quadrangular columns.
摘要翻译：金刚石电子发射元件设置有基板，并且由金刚石构成的多个四边形柱（微观突起）和平面的侧面以等间隔布置在基板上。顶端面（水平截面）为四边形，长边长为[nm]，短边长为ka [nm]，SiO 2薄膜为薄膜，形成在短边侧的侧面上。长边的长度a [nm]和短边的长度ka [nm]满足下面的式（1）和（2）的关系式。 <？in-line-formula description =“In-line Formulas”end =“lead”？> C =2a√{平方根超过（1 + k < ）}（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> nlambda （2）<？in-line-formula description =“In-line Formulas”end =“tail”？> C 1 ：距离[nm] 在每个四边形列内产生的光在特定电路上绕过同时在四边形柱的侧面反射的情况下，一圈的任意正整数，λ：发射峰值波长λ[nm] 钻石制作四边形柱。

4. 发明授权

US07026750B2 Electron emission element 失效
标题翻译：电子发射元件
公开(公告)号：US07026750B2
公开(公告)日：2006-04-11
申请号：US10667149
申请日：2003-09-22
申请人： Yoshiki Nishibayashi , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Takahiro Imai , Yutaka Ando
IPC分类号： H01J1/14
CPC分类号： H01J1/3044 , H01J2201/30457
摘要： An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r [cm] between a center axis and a side face in the columnar body and the boron concentration Nb [cm−3] in the diamond satisfy the relationship represented by the following formula (1): r > 10 4 Nb . ( 1 )
摘要翻译：本发明的电子发射元件包括基底和从基底突出并包含掺杂硼的金刚石的突起。突起包括柱状体。并且突起的尖端部分包括从其伸出的针状体。菱形中的中心轴和侧面之间的距离r [cm]和菱形中的硼浓度Nb [cm -3]满足下式（1）所示的关系： $\begin{matrix} r> < / MO>10\sqrt{（1）} \end{matrix}$

5. 发明授权

US06958571B2 Electron-emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US06958571B2
公开(公告)日：2005-10-25
申请号：US09942101
申请日：2001-08-30
申请人： Yoshiki Nishibayashi , Yutaka Ando , Kiichi Meguro , Takahiro Imai
发明人： Yoshiki Nishibayashi , Yutaka Ando , Kiichi Meguro , Takahiro Imai
IPC分类号： H01J1/304 , H01J9/02 , H01J19/24
CPC分类号： H01J9/025 , H01J1/3044
摘要： A method of manufacturing an electron-emitting element (20) for emitting electrons from diamond includes the first step of forming a diamond columnar member (25) on a diamond substrate (21), and the second step of forming an electron-emitting portion (30) having a base portion (36) and a sharp-pointed portion (32) which is located closer to a distal end side than the base portion (36) and emits the electrons by performing etching processing with respect to the columnar member (25).
摘要翻译：制造用于从金刚石发射电子的电子发射元件（20）的方法包括在金刚石衬底（21）上形成金刚石柱状构件（25）的第一步骤，以及形成电子发射部分 30），其具有位于比基部（36）更靠近远端侧的基部（36）和尖锐部（32），并通过对柱状部件（25）进行蚀刻处理而发射电子）。

6. 发明授权

US06876136B2 Electron emission element 失效
标题翻译：电子发射元件
公开(公告)号：US06876136B2
公开(公告)日：2005-04-05
申请号：US10660633
申请日：2003-09-12
申请人： Yoshiki Nishibayashi , Yutaka Ando , Takahiro Imai
发明人： Yoshiki Nishibayashi , Yutaka Ando , Takahiro Imai
IPC分类号： H01J1/30 , H01J1/304 , H01J19/24
CPC分类号： H01J1/3044 , H01J2201/30457
摘要： An electron emission element according to the present invention comprises a substrate, and a plurality of protrusions composed of diamond and protruding from the substrate. Each protrusion includes a columnar portion, the side face of which forms an inclination of approximately 90° relative to the surface of the substrate, and a tip portion, which is located on the columnar portion having a spicular end. A conductive layer is formed on the upper part of each columnar portion, and a cathode electrode film, which is electrically connected to the conductive layer, is formed on the side face of the columnar portion.
摘要翻译：根据本发明的电子发射元件包括基底和由金刚石组成并从基底突出的多个突起。每个突起包括柱状部分，其侧面相对于基底的表面形成约90°的倾斜，并且位于柱状部分上的尖端部分具有相关端。在每个柱状部分的上部形成导电层，并且在柱状部分的侧面上形成与导电层电连接的阴极电极膜。

7. 发明申请

US20050000938A1 Method of making diamond product and diamond product 失效
标题翻译：制造钻石产品和钻石产品的方法
公开(公告)号：US20050000938A1
公开(公告)日：2005-01-06
申请号：US10774417
申请日：2004-02-10
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： C01B31/06 , C30B29/04 , C30B33/00 , H01J1/304 , H01J9/02 , C23F1/00
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译：制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

8. 发明申请

US20090160307A1 DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：金刚石电子源及其制造方法
公开(公告)号：US20090160307A1
公开(公告)日：2009-06-25
申请号：US12094250
申请日：2007-09-18
申请人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/16 , H01J9/02
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译：一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点器件，以及金刚石电子源的制造方法。将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

9. 发明申请

US20050202665A1 Method of fabricating n-type semiconductor diamond, and semiconductor diamond 有权
标题翻译：制造n型半导体金刚石和半导体金刚石的方法
公开(公告)号：US20050202665A1
公开(公告)日：2005-09-15
申请号：US11013450
申请日：2004-12-17
申请人： Akihiko Namba , Takahiro Imai , Yoshiki Nishibayashi
发明人： Akihiko Namba , Takahiro Imai , Yoshiki Nishibayashi
IPC分类号： C30B25/02 , C30B29/04 , H01L21/04 , H01L21/20 , H01L21/205 , H01L21/44
CPC分类号： C30B25/02 , C30B29/04 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02444 , H01L21/02494 , H01L21/02527 , H01L21/02576 , H01L21/02587 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L21/041 , H01L29/66022 , H01L29/66037
摘要： An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.
摘要翻译：通过处理单晶{100}金刚石衬底10以形成{111}面，然后通过使金刚石外延生长同时n掺杂金刚石{111}面而形成n型金刚石外延层20 。此外，以上述方式获得的n型半导体金刚石，p型半导体金刚石和非掺杂金刚石以及使用p型单晶{100}金刚石衬底的组合允许对于pn结型，pnp结型，npn结型和pin结型半导体金刚石。

10. 发明授权

US08119241B2 Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film 有权
标题翻译：具有薄膜的金刚石单晶的制造方法和具有薄膜的金刚石单晶
公开(公告)号：US08119241B2
公开(公告)日：2012-02-21
申请号：US12282137
申请日：2007-12-26
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：一种在{111}单晶衬底的主表面上在300K下比电阻为300Ω·cm-cm或更小的低电阻磷掺杂外延薄膜的方法，其中磷原子/碳原子比为3％以上，主偏离角为0.50°以上的主表面。具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率电阻磷掺杂金刚石外延薄膜在300K时为300＆OHgr; cm以下。

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