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    • 4. 发明申请
    • Diamond composite substrate and process for producing the same
    • 金刚石复合基板及其制造方法
    • US20050160968A1
    • 2005-07-28
    • US10510848
    • 2004-01-22
    • Kiichi MeguroYoshiyuki Yamamoto
    • Kiichi MeguroYoshiyuki Yamamoto
    • C23C16/27C30B29/04C30B33/00C30B33/06C30B7/00C30B21/02C30B28/06C30B9/00C30B11/00C30B17/00
    • C23C16/279C23C16/274C30B29/04C30B33/00C30B33/06
    • It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate. A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substrate 3 may be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layer 4 to create a diamond composite substrate 2. The diamond monocrystals may also be used as seed crystals and diamond monocrystals provided by vapor phase synthesis on the surface thereof.
    • 本发明的目的是提供一种用于半导体材料,电子部件,光学部件等的具有高韧性,大表面积和高质量的金刚石基板及其制造方法。 将金刚石多晶膜层压在金刚石单晶衬底的表面上以形成金刚石复合衬底。 在所述金刚石复合基板中,优选具有金刚石单晶基板的最大表面积的主面为{100}面,并且金刚石多晶膜层叠在与该面平行的相对面上。 金刚石单晶衬底3可以由具有相同取向的主面的多个金刚石单晶构成,并且这些多个金刚石单晶可以通过金刚石晶体层4连接以形成金刚石复合衬底2。 金刚石单晶也可以用作通过气相合成在其表面上提供的晶种和金刚石单晶。
    • 5. 发明申请
    • Diamond single crystal composite substrate and method for manufacturing the same
    • 金刚石单晶复合基板及其制造方法
    • US20050139150A1
    • 2005-06-30
    • US10980152
    • 2004-11-04
    • Kiichi MeguroYoshiyuki YamamotoTakahiro Imai
    • Kiichi MeguroYoshiyuki YamamotoTakahiro Imai
    • C01B31/06C30B25/02C30B25/18C30B25/20C30B29/04C30B23/00C30B25/00C30B28/12C30B28/14
    • C30B29/04C30B25/20
    • A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.
    • 一种金刚石单晶复合基板,其由具有均匀平面取向的多个金刚石单晶基板构成,并且通过气相合成在其上生长金刚石单晶整体并入,其中主体的平面取向偏离 从{100}平面除去一个金刚石单晶衬底的所述多个金刚石单晶衬底中的每一个的平面的面积小于1度,排除的一个衬底的主平面的平面取向与{100 }平面为1〜8度,当金刚石单晶基板并排配置时,所述一个金刚石单晶基板配置在最外周部,并且配置成使得在所述一个的主平面中的<100>方向 衬底在所设置的衬底的外周方向上面对,然后通过气相合成生长金刚石单晶 使得从所述一个金刚石单个衬底生长的金刚石单晶被覆盖在其它衬底上生长的金刚石单晶,以实现整体的整合。
    • 7. 发明授权
    • Diamond composite substrate and process for producing the same
    • 金刚石复合基板及其制造方法
    • US07892356B2
    • 2011-02-22
    • US10510848
    • 2004-01-22
    • Kiichi MeguroYoshiyuki YamamotoTakahiro Imai
    • Kiichi MeguroYoshiyuki YamamotoTakahiro Imai
    • C30B29/02
    • C23C16/279C23C16/274C30B29/04C30B33/00C30B33/06
    • It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate.A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substrate 3 may be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layer 4 to create a diamond composite substrate 2. The diamond monocrystals may also be used as seed crystals and diamond monocrystals provided by vapor phase synthesis on the surface thereof.
    • 本发明的目的是提供一种用于半导体材料,电子部件,光学部件等的具有高韧性,大表面积和高质量的金刚石基板及其制造方法。 将金刚石多晶膜层压在金刚石单晶衬底的表面上以形成金刚石复合衬底。 在所述金刚石复合基板中,优选具有金刚石单晶基板的最大表面积的主面为{100}面,并且金刚石多晶膜层叠在与该面平行的相对面上。 金刚石单晶衬底3可以由具有相同方向的主面的多个金刚石单晶组成,并且这些多个金刚石单晶可以通过金刚石晶体层4连接以形成金刚石复合衬底2.金刚石单晶 也可以用作通过气相合成在其表面上提供的晶种和金刚石单晶。
    • 8. 发明授权
    • Diamond single crystal substrate manufacturing method
    • 钻石单晶基板制造方法
    • US07771693B2
    • 2010-08-10
    • US12192515
    • 2008-08-15
    • Kiichi MeguroYoshiyuki YamamotoTakahiro Imai
    • Kiichi MeguroYoshiyuki YamamotoTakahiro Imai
    • B01J3/06
    • C30B33/00C30B25/20C30B29/04Y10T428/30
    • A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
    • 一种用于通过气相合成从金刚石单晶种子基底生长单晶的金刚石单晶衬底制造方法,包括在单晶生长之前通过反应离子蚀刻腐蚀掉至少0.5μm且小于400μm, 将已经机械抛光的种子基片的表面的厚度除去,从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。 该制造方法提供具有高质量,大尺寸和无意的杂质夹杂物的金刚石单晶衬底,并且适合用作半导体材料,电子部件,光学部件等。
    • 9. 发明申请
    • SINGLE CRYSTALLINE DIAMOND AND PRODUCING METHOD THEREOF
    • 单晶金刚石及其生产方法
    • US20100111812A1
    • 2010-05-06
    • US12684684
    • 2010-01-08
    • Kiichi MEGUROYoshiyuki YamamotoTakahiro Imai
    • Kiichi MEGUROYoshiyuki YamamotoTakahiro Imai
    • C01B31/06C30B25/00
    • C30B29/04C30B25/20
    • The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
    • 本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学部件材料的高质量单晶金刚石。 本发明是通过化学气相沉积法生产的单晶金刚石,其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时,其最大值为 相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟在整个单晶金刚石上的最大厚度为100μm时最大不超过50μm,还有用于制造金刚石的方法 。