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1. 发明授权

US07524372B2 Method for manufacturing diamond single crystal substrate 有权
标题翻译：金刚石单晶基板的制造方法
公开(公告)号：US07524372B2
公开(公告)日：2009-04-28
申请号：US11388970
申请日：2006-03-27
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B29/04
CPC分类号： C30B25/02 , C30B25/18 , C30B29/04
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译：一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。

2. 发明授权

US07481879B2 Diamond single crystal substrate manufacturing method and diamond single crystal substrate 有权
标题翻译：金刚石单晶衬底制造方法和金刚石单晶衬底
公开(公告)号：US07481879B2
公开(公告)日：2009-01-27
申请号：US11032176
申请日：2005-01-11
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B23/02 , C01B31/06
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译：一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。

3. 发明申请

US20080311024A1 DIAMOND SINGLE CRYSTAL SUBSTRATE MANUFACTURING METHOD AND DIAMOND SINGLE CRYSTAL SUBSTRATE 有权
标题翻译：钻石单晶基板制造方法和钻石单晶基板
公开(公告)号：US20080311024A1
公开(公告)日：2008-12-18
申请号：US12192515
申请日：2008-08-15
申请人： Kiichi MEGURO , Yoshiyuki YAMAMOTO , Takahiro IMAI
发明人： Kiichi MEGURO , Yoshiyuki YAMAMOTO , Takahiro IMAI
IPC分类号： C30B23/00 , B01J3/06
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译：一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。

4. 发明申请

US20050160968A1 Diamond composite substrate and process for producing the same 失效
标题翻译：金刚石复合基板及其制造方法
公开(公告)号：US20050160968A1
公开(公告)日：2005-07-28
申请号：US10510848
申请日：2004-01-22
申请人： Kiichi Meguro , Yoshiyuki Yamamoto
发明人： Kiichi Meguro , Yoshiyuki Yamamoto
IPC分类号： C23C16/27 , C30B29/04 , C30B33/00 , C30B33/06 , C30B7/00 , C30B21/02 , C30B28/06 , C30B9/00 , C30B11/00 , C30B17/00
CPC分类号： C23C16/279 , C23C16/274 , C30B29/04 , C30B33/00 , C30B33/06
摘要： It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate. A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substrate 3 may be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layer 4 to create a diamond composite substrate 2. The diamond monocrystals may also be used as seed crystals and diamond monocrystals provided by vapor phase synthesis on the surface thereof.
摘要翻译：本发明的目的是提供一种用于半导体材料，电子部件，光学部件等的具有高韧性，大表面积和高质量的金刚石基板及其制造方法。将金刚石多晶膜层压在金刚石单晶衬底的表面上以形成金刚石复合衬底。在所述金刚石复合基板中，优选具有金刚石单晶基板的最大表面积的主面为{100}面，并且金刚石多晶膜层叠在与该面平行的相对面上。金刚石单晶衬底3可以由具有相同取向的主面的多个金刚石单晶构成，并且这些多个金刚石单晶可以通过金刚石晶体层4连接以形成金刚石复合衬底2。金刚石单晶也可以用作通过气相合成在其表面上提供的晶种和金刚石单晶。

5. 发明申请

US20050139150A1 Diamond single crystal composite substrate and method for manufacturing the same 有权
标题翻译：金刚石单晶复合基板及其制造方法
公开(公告)号：US20050139150A1
公开(公告)日：2005-06-30
申请号：US10980152
申请日：2004-11-04
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C01B31/06 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/04 , C30B25/20
摘要： A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.
摘要翻译：一种金刚石单晶复合基板，其由具有均匀平面取向的多个金刚石单晶基板构成，并且通过气相合成在其上生长金刚石单晶整体并入，其中主体的平面取向偏离从{100}平面除去一个金刚石单晶衬底的所述多个金刚石单晶衬底中的每一个的平面的面积小于1度，排除的一个衬底的主平面的平面取向与{100 }平面为1〜8度，当金刚石单晶基板并排配置时，所述一个金刚石单晶基板配置在最外周部，并且配置成使得在所述一个的主平面中的<100>方向衬底在所设置的衬底的外周方向上面对，然后通过气相合成生长金刚石单晶使得从所述一个金刚石单个衬底生长的金刚石单晶被覆盖在其它衬底上生长的金刚石单晶，以实现整体的整合。

6. 发明授权

US06709730B2 Method of making diamond product and diamond product 失效
标题翻译：制造钻石产品和钻石产品的方法
公开(公告)号：US06709730B2
公开(公告)日：2004-03-23
申请号：US09995854
申请日：2001-11-29
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： B32B900
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译：制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

7. 发明授权

US07892356B2 Diamond composite substrate and process for producing the same 失效
标题翻译：金刚石复合基板及其制造方法
公开(公告)号：US07892356B2
公开(公告)日：2011-02-22
申请号：US10510848
申请日：2004-01-22
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B29/02
CPC分类号： C23C16/279 , C23C16/274 , C30B29/04 , C30B33/00 , C30B33/06
摘要： It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate.A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substrate 3 may be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layer 4 to create a diamond composite substrate 2. The diamond monocrystals may also be used as seed crystals and diamond monocrystals provided by vapor phase synthesis on the surface thereof.
摘要翻译：本发明的目的是提供一种用于半导体材料，电子部件，光学部件等的具有高韧性，大表面积和高质量的金刚石基板及其制造方法。将金刚石多晶膜层压在金刚石单晶衬底的表面上以形成金刚石复合衬底。在所述金刚石复合基板中，优选具有金刚石单晶基板的最大表面积的主面为{100}面，并且金刚石多晶膜层叠在与该面平行的相对面上。金刚石单晶衬底3可以由具有相同方向的主面的多个金刚石单晶组成，并且这些多个金刚石单晶可以通过金刚石晶体层4连接以形成金刚石复合衬底2.金刚石单晶也可以用作通过气相合成在其表面上提供的晶种和金刚石单晶。

8. 发明授权

US07771693B2 Diamond single crystal substrate manufacturing method 有权
标题翻译：钻石单晶基板制造方法
公开(公告)号：US07771693B2
公开(公告)日：2010-08-10
申请号：US12192515
申请日：2008-08-15
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： B01J3/06
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译：一种用于通过气相合成从金刚石单晶种子基底生长单晶的金刚石单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀掉至少0.5μm且小于400μm，将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。

9. 发明申请

US20100111812A1 SINGLE CRYSTALLINE DIAMOND AND PRODUCING METHOD THEREOF 审中-公开
标题翻译：单晶金刚石及其生产方法
公开(公告)号：US20100111812A1
公开(公告)日：2010-05-06
申请号：US12684684
申请日：2010-01-08
申请人： Kiichi MEGURO , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi MEGURO , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C01B31/06 , C30B25/00
CPC分类号： C30B29/04 , C30B25/20
摘要： The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
摘要翻译：本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学部件材料的高质量单晶金刚石。本发明是通过化学气相沉积法生产的单晶金刚石，其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时，其最大值为相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟在整个单晶金刚石上的最大厚度为100μm时最大不超过50μm，还有用于制造金刚石的方法。

10. 发明申请

US20090169814A1 METHOD FOR MANUFACTURING DIAMOND MONOCRYSTAL HAVING A THIN FILM, AND DIAMOND MONOCRYSTAL HAVING A THIN FILM 有权
标题翻译：制造具有薄膜的金刚石单晶的方法和具有薄膜的金刚石单晶
公开(公告)号：US20090169814A1
公开(公告)日：2009-07-02
申请号：US12282137
申请日：2007-12-26
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C30B23/00 , H01L21/322 , B32B9/00 , B32B5/00
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：在磷原子/碳原子比为3的条件下，在{111}单晶衬底的主面上，在300K下生长电阻率为300Ω/ cm以下的低电阻磷掺杂外延薄膜的方法％以上，包括主表面的偏角为0.50°以上。具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率电阻磷掺杂金刚石外延薄膜在300K时为300Ω·cm以下。

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