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1. 发明授权

US07543138B1 Image server and method of controlling same 有权
标题翻译：图像服务器及其控制方法
公开(公告)号：US07543138B1
公开(公告)日：2009-06-02
申请号：US09667701
申请日：2000-09-22
申请人： Yoshiki Kawaoka , Norihisa Haneda , Hiroshi Suganuma , Hiroyuki Yoshinaga
发明人： Yoshiki Kawaoka , Norihisa Haneda , Hiroshi Suganuma , Hiroyuki Yoshinaga
IPC分类号： H04L9/00 , G06F12/14 , H04N1/44 , G03B27/14
CPC分类号： G06F21/10
摘要： An image registration server stores encryption keys of respective ones of a plurality of client terminals. Image data is encrypted by the image registration server using the encryption key corresponding to the client terminal to which the image data is applied. The encrypted image data is applied to the client terminal via a server. The client terminal has a decryption key stored within so that only a client terminal that is duly authorized can decrypt encrypted image data. Other client terminals that are not duly authorized cannot decode the image data. This makes it possible to prevent unlawful use of image data even if the image data has been intercepted.
摘要翻译：图像注册服务器存储多个客户终端中的各个的加密密钥。图像数据由图像注册服务器使用与应用图像数据的客户终端对应的加密密钥加密。加密的图像数据经由服务器应用于客户终端。客户终端具有存储在其中的解密密钥，使得只有经过适当授权的客户终端可以对加密的图像数据进行解密。未经正式授权的其他客户终端无法解码图像数据。这使得即使图像数据被截取也可以防止非法使用图像数据。

2. 发明授权

US07310159B1 Image outputting system 有权
标题翻译：图像输出系统
公开(公告)号：US07310159B1
公开(公告)日：2007-12-18
申请号：US09707765
申请日：2000-11-08
申请人： Haruo Soeda , Yoshiki Kawaoka , Hiroyuki Yoshinaga
发明人： Haruo Soeda , Yoshiki Kawaoka , Hiroyuki Yoshinaga
IPC分类号： G06F3/12 , G06K15/00
CPC分类号： G06K15/00 , B41J29/393 , G06F3/1208 , G06F3/1229 , G06F3/1288 , G06K15/1805 , G06K15/1809 , H04N1/00015 , H04N1/00034 , H04N1/00058 , H04N1/00079 , H04N1/00082 , H04N1/3871 , H04N1/6091
摘要： An image outputting system that can keep the printed image quality always in good condition by correcting printing color tone based on printing color correcting information received via a network. The image outputting system comprises: an image outputting apparatus including a flat-bed scanner for reading an image, printers for printing the image, a network interface or a modem connectable with external devices via a network, and a correcting device for correcting printing color tone based on printing color correcting information received via the network; and a network server connected to the network for sending the printing color correcting information to the image outputting apparatus via the network. Thus, the network server controls the printing unit based on status information acquired from the image outputting apparatus and always keep the printed image quality in good condition.
摘要翻译：通过基于通过网络接收的打印色彩校正信息来校正打印色调，可以使打印的图像质量始终保持良好状态的图像输出系统。图像输出系统包括：图像输出装置，包括用于读取图像的平板扫描仪，用于打印图像的打印机，经由网络与外部设备连接的网络接口或调制解调器，以及用于校正打印色调的校正装置基于经由网络接收的打印颜色校正信息; 以及连接到网络的网络服务器，用于经由网络将打印色彩校正信息发送到图像输出装置。因此，网络服务器基于从图像输出装置获取的状态信息来控制打印单元，并且始终保持打印的图像质量良好。

3. 发明申请

US20120094415A1 METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE AND SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：用于生产半导体光学器件和半导体光学器件的方法
公开(公告)号：US20120094415A1
公开(公告)日：2012-04-19
申请号：US13267952
申请日：2011-10-07
申请人： Hideki YAGI , Hiroyuki Yoshinaga
发明人： Hideki YAGI , Hiroyuki Yoshinaga
IPC分类号： H01L33/08
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/22 , H01S5/2213
摘要： A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar.
摘要翻译：一种制造半导体光学器件的方法包括以下步骤：在衬底上形成包括脊结构的半导体区域; 在半导体区域上形成绝缘膜; 在所述绝缘膜上形成非感光性树脂区域，形成限定划线区域的第一掩模; 通过使用第一掩模的蚀刻形成划线区域; 在去除第一掩模之后，通过蚀刻绝缘膜形成绝缘层，在脊结构和非感光树脂区上形成电极以产生基底产物; 在基板产品的划线区域中的半导体区域的表面上形成划线; 并沿着划线切割产品以形成半导体激光条。

4. 发明授权

US08124543B2 Method for manufacturing semiconductor laser diode 有权
标题翻译：制造半导体激光二极管的方法
公开(公告)号：US08124543B2
公开(公告)日：2012-02-28
申请号：US12785860
申请日：2010-05-24
申请人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
发明人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
IPC分类号： H01L21/302
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/12 , H01S5/2086 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2222 , H01S5/2275 , H01S2301/176
摘要： A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.
摘要翻译：公开了一种制造LD的方法。 LD具有包括光学有源区域的条纹结构。条状结构被树脂掩埋，通常是苯并环丁烯（BCB）。在BCB层中形成开口的方法具有RIE的三步蚀刻。第一步通过CF4和O2的混合气体部分地蚀刻BCB层，其中CF4具有第一分压，第二步通过CF4和O2的混合气体蚀刻BCB层顶部的光致抗蚀剂，其中CF4 在该步骤中具有小于第一分压的第二分压，第三步骤通过CF4和O2的混合气体蚀刻第一步中留下的BCB，其中该步骤中的CF 4具有大于第二分压的第三分压。

5. 发明授权

US08617969B2 Method for producing semiconductor optical device 有权
标题翻译：半导体光学元件的制造方法
公开(公告)号：US08617969B2
公开(公告)日：2013-12-31
申请号：US13530154
申请日：2012-06-22
申请人： Kenji Sakurai , Hideki Yagi , Hiroyuki Yoshinaga
发明人： Kenji Sakurai , Hideki Yagi , Hiroyuki Yoshinaga
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , H01S5/2275
摘要： A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching.
摘要翻译：一种制造半导体光学器件的方法包括以下步骤：在衬底的主表面上生长包括蚀刻停止层和多个半导体层的半导体堆叠层; 在所述半导体层叠层的顶面上形成掩模层，使得在所述半导体堆叠层的生长步骤中产生的突起中从所述顶面突出的突起的前端部露出; 通过使用掩模层的湿蚀刻来蚀刻突起; 在通过湿蚀刻蚀刻突起之后，通过干蚀刻去除突起; 并且通过干蚀刻去除突起之后从顶表面去除掩模层。

6. 发明申请

US20100303115A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE 有权
标题翻译：制造半导体激光二极管的方法
公开(公告)号：US20100303115A1
公开(公告)日：2010-12-02
申请号：US12785860
申请日：2010-05-24
申请人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
发明人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
IPC分类号： H01S5/22 , H01L33/00
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/12 , H01S5/2086 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2222 , H01S5/2275 , H01S2301/176
摘要： A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.
摘要翻译：公开了一种制造LD的方法。 LD具有包括光学有源区域的条纹结构。条状结构被树脂掩埋，通常是苯并环丁烯（BCB）。在BCB层中形成开口的方法具有RIE的三步蚀刻。第一步通过CF4和O2的混合气体部分地蚀刻BCB层，其中CF4具有第一分压，第二步通过CF4和O2的混合气体蚀刻在BCB层的顶部上形成的光致抗蚀剂，其中CF4 在该步骤中具有小于第一分压的第二分压，第三步骤通过CF4和O2的混合气体蚀刻第一步中留下的BCB，其中该步骤中的CF 4具有大于第二分压的第三分压。

7. 发明申请

US20050162790A1 Electrostatic discharge protection circuit 审中-公开
标题翻译：静电放电保护电路
公开(公告)号：US20050162790A1
公开(公告)日：2005-07-28
申请号：US10924195
申请日：2004-08-24
申请人： Hiroyuki Yoshinaga
发明人： Hiroyuki Yoshinaga
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H01L27/06 , H02H9/00
CPC分类号： H01L27/0251 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge protection circuit comprises an input terminal, an output terminal connected to the input terminal via a transmission line, and connected to a circuit to be protected, and a filter circuit disposed in the transmission line, wherein the filter circuit includes at least one inductor disposed in the transmission line between the input terminal and the output terminal, and connected in series when a plurality of inductors are arranged, and at least one electrostatic discharge protection device connected between the transmission line and a reference potential line, the filter circuit being symmetrically configured in terms of an equivalent circuit between the input terminal and the output terminal.
摘要翻译：一种静电放电保护电路，包括输入端子，经由传输线路连接到输入端子并连接到待保护电路的输出端子和设置在传输线路中的滤波电路，其中滤波电路包括至少一个电感器设置在输入端子和输出端子之间的传输线中，并且当布置多个电感器时串联连接，并且至少一个静电放电保护器件连接在传输线和参考电位线之间，滤波器电路是根据输入端子和输出端子之间的等效电路对称地配置。

8. 发明授权

US06284499B1 Method for producing L-sorbose and apparatus for culturing microorganisms 失效
标题翻译： L-山梨糖的生产方法和培养微生物的装置
公开(公告)号：US06284499B1
公开(公告)日：2001-09-04
申请号：US08101093
申请日：1993-08-03
申请人： Katsumitsu Kishimoto , Kazuhiko Kintaka , Hiroyuki Yoshinaga
发明人： Katsumitsu Kishimoto , Kazuhiko Kintaka , Hiroyuki Yoshinaga
IPC分类号： C12P1902
CPC分类号： C12M41/32 , C12M41/34 , C12P19/02
摘要： A method for producing L-sorbose by microbiological oxidation of D-sorbitol which comprises adding D-sorbitol to a culture liquid in such a concentration that it does not go up to over about 5% during and after the growth phase of a microorganism used, while circulating a culture exhaust gas enriched with oxygen gas, and releasing a part of said exhaust gas out of the system. An apparatus for culturing microorganisms suitable for the method is also disclosed.
摘要翻译： D-山梨醇的微生物氧化生产L-山梨糖的方法，其包括向培养液中加入D-山梨糖醇，浓度使其在所用微生物生长期间和之后不超过约5％同时循环富含氧气的培养废气，并将一部分所述废气释放出系统。还公开了适用于该方法的培养微生物的装置。

9. 发明授权

US08450128B2 Method for producing semiconductor optical device and semiconductor optical device 有权
标题翻译：半导体光学器件和半导体光学器件的制造方法
公开(公告)号：US08450128B2
公开(公告)日：2013-05-28
申请号：US13267952
申请日：2011-10-07
申请人： Hideki Yagi , Hiroyuki Yoshinaga
发明人： Hideki Yagi , Hiroyuki Yoshinaga
IPC分类号： H01L21/00
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/22 , H01S5/2213
摘要： A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar.
摘要翻译：一种制造半导体光学器件的方法包括以下步骤：在衬底上形成包括脊结构的半导体区域; 在半导体区域上形成绝缘膜; 在所述绝缘膜上形成非感光性树脂区域，形成限定划线区域的第一掩模; 通过使用第一掩模的蚀刻形成划线区域; 在去除第一掩模之后，通过蚀刻绝缘膜形成绝缘层，在脊结构和非感光树脂区上形成电极以产生基底产物; 在基板产品的划线区域中的半导体区域的表面上形成划线; 并沿着划线切割产品以形成半导体激光条。

10. 发明授权

US07570467B2 Electrostatic protection circuit 失效
标题翻译：静电保护电路
公开(公告)号：US07570467B2
公开(公告)日：2009-08-04
申请号：US11237149
申请日：2005-09-27
申请人： Kentaro Watanabe , Hiroyuki Yoshinaga
发明人： Kentaro Watanabe , Hiroyuki Yoshinaga
IPC分类号： H02H9/00
CPC分类号： H01L27/0262
摘要： An electrostatic protection circuit being an integrated circuit on a semiconductor substrate and including a first power supply terminal having a predetermined potential VDD, a second power supply terminal having a lower potential VSS than the predetermined potential, and an input/output terminal for a signal, the electrostatic protection circuit including: a first and second diodes having the respective cathode electrodes thereof connected in series at a first common connection point between the first power supply terminal and input/output terminal; a third and fourth diodes having the respective anode electrodes thereof connected in series at a second common connection point between the second power supply terminal and input/output terminal; a first discharge element, connected between the first and second common connection points, for discharging excessive static electricity; and a second discharge element, connected between the first and second power supply terminals, for discharging excessive static electricity.
摘要翻译：一种静电保护电路，是半导体衬底上的集成电路，包括具有预定电位VDD的第一电源端子，具有比预定电位低的电位VSS的第二电源端子和用于信号的输入/输出端子，所述静电保护电路包括：第一和第二二极管，其第一和第二二极管具有在第一电源端子和输入/输出端子之间的第一公共连接点串联连接的各个阴极电极; 第三和第四二极管，其各自的阳极电极在第二电源端子和输入/输出端子之间的第二公共连接点处串联连接; 第一放电元件，连接在第一和第二公共连接点之间，用于释放过多的静电; 以及第二放电元件，连接在第一和第二电源端子之间，用于释放过多的静电。

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