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1. 发明授权

US08617969B2 Method for producing semiconductor optical device 有权
标题翻译：半导体光学元件的制造方法
公开(公告)号：US08617969B2
公开(公告)日：2013-12-31
申请号：US13530154
申请日：2012-06-22
申请人： Kenji Sakurai , Hideki Yagi , Hiroyuki Yoshinaga
发明人： Kenji Sakurai , Hideki Yagi , Hiroyuki Yoshinaga
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , H01S5/2275
摘要： A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching.
摘要翻译：一种制造半导体光学器件的方法包括以下步骤：在衬底的主表面上生长包括蚀刻停止层和多个半导体层的半导体堆叠层; 在所述半导体层叠层的顶面上形成掩模层，使得在所述半导体堆叠层的生长步骤中产生的突起中从所述顶面突出的突起的前端部露出; 通过使用掩模层的湿蚀刻来蚀刻突起; 在通过湿蚀刻蚀刻突起之后，通过干蚀刻去除突起; 并且通过干蚀刻去除突起之后从顶表面去除掩模层。

2. 发明申请

US20100303115A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE 有权
标题翻译：制造半导体激光二极管的方法
公开(公告)号：US20100303115A1
公开(公告)日：2010-12-02
申请号：US12785860
申请日：2010-05-24
申请人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
发明人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
IPC分类号： H01S5/22 , H01L33/00
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/12 , H01S5/2086 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2222 , H01S5/2275 , H01S2301/176
摘要： A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.
摘要翻译：公开了一种制造LD的方法。 LD具有包括光学有源区域的条纹结构。条状结构被树脂掩埋，通常是苯并环丁烯（BCB）。在BCB层中形成开口的方法具有RIE的三步蚀刻。第一步通过CF4和O2的混合气体部分地蚀刻BCB层，其中CF4具有第一分压，第二步通过CF4和O2的混合气体蚀刻在BCB层的顶部上形成的光致抗蚀剂，其中CF4 在该步骤中具有小于第一分压的第二分压，第三步骤通过CF4和O2的混合气体蚀刻第一步中留下的BCB，其中该步骤中的CF 4具有大于第二分压的第三分压。

3. 发明授权

US08124543B2 Method for manufacturing semiconductor laser diode 有权
标题翻译：制造半导体激光二极管的方法
公开(公告)号：US08124543B2
公开(公告)日：2012-02-28
申请号：US12785860
申请日：2010-05-24
申请人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
发明人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
IPC分类号： H01L21/302
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/12 , H01S5/2086 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2222 , H01S5/2275 , H01S2301/176
摘要： A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.
摘要翻译：公开了一种制造LD的方法。 LD具有包括光学有源区域的条纹结构。条状结构被树脂掩埋，通常是苯并环丁烯（BCB）。在BCB层中形成开口的方法具有RIE的三步蚀刻。第一步通过CF4和O2的混合气体部分地蚀刻BCB层，其中CF4具有第一分压，第二步通过CF4和O2的混合气体蚀刻BCB层顶部的光致抗蚀剂，其中CF4 在该步骤中具有小于第一分压的第二分压，第三步骤通过CF4和O2的混合气体蚀刻第一步中留下的BCB，其中该步骤中的CF 4具有大于第二分压的第三分压。

4. 发明授权

US08450128B2 Method for producing semiconductor optical device and semiconductor optical device 有权
标题翻译：半导体光学器件和半导体光学器件的制造方法
公开(公告)号：US08450128B2
公开(公告)日：2013-05-28
申请号：US13267952
申请日：2011-10-07
申请人： Hideki Yagi , Hiroyuki Yoshinaga
发明人： Hideki Yagi , Hiroyuki Yoshinaga
IPC分类号： H01L21/00
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/22 , H01S5/2213
摘要： A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar.
摘要翻译：一种制造半导体光学器件的方法包括以下步骤：在衬底上形成包括脊结构的半导体区域; 在半导体区域上形成绝缘膜; 在所述绝缘膜上形成非感光性树脂区域，形成限定划线区域的第一掩模; 通过使用第一掩模的蚀刻形成划线区域; 在去除第一掩模之后，通过蚀刻绝缘膜形成绝缘层，在脊结构和非感光树脂区上形成电极以产生基底产物; 在基板产品的划线区域中的半导体区域的表面上形成划线; 并沿着划线切割产品以形成半导体激光条。

5. 发明授权

US07736926B2 Method for manufacturing a light-emitting device with a periodic structure in an active region 失效
标题翻译：在活性区域中制造具有周期性结构的发光装置的方法
公开(公告)号：US07736926B2
公开(公告)日：2010-06-15
申请号：US11790486
申请日：2007-04-25
申请人： Hideki Yagi
发明人： Hideki Yagi
IPC分类号： H01L21/00
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/2275 , H01S5/341 , H01S5/3412
摘要： The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.
摘要翻译：本发明提供了一种发光器件，其中其有源区域可以避免被等离子体工艺损坏。该器件首先在半导体衬底上形成半导体层，接下来设置有蚀刻掩模。使用掩模，将衬底上的半导体层干蚀刻以形成具有凹槽和台面的周期性结构。通过OMVPE方法将有源区域埋入槽内。

6. 发明授权

US07496125B2 Composite laser rod, fabricating method thereof, and laser device therewith 有权
标题翻译：复合激光棒及其制造方法及激光装置
公开(公告)号：US07496125B2
公开(公告)日：2009-02-24
申请号：US11561301
申请日：2006-11-17
申请人： Hikaru Kouta , Yoshikazu Suzuki , Shuetsu Kudo , Masaki Tsunekane , Katsuji Mukaihara , Takagimi Yanagitani , Hideki Yagi
发明人： Hikaru Kouta , Yoshikazu Suzuki , Shuetsu Kudo , Masaki Tsunekane , Katsuji Mukaihara , Takagimi Yanagitani , Hideki Yagi
IPC分类号： H01S3/14 , H01S3/07
CPC分类号： H01S3/061 , H01S3/025 , H01S3/0407 , H01S3/042 , H01S3/0612 , H01S3/08095 , H01S3/0941 , H01S3/09415
摘要： As a composite laser rod capable of satisfying the positional stability and output stability of a laser beam, a laser rod in which a laser active element is doped is intimately inserted into a hollow portion of a non-doped ceramic pipe that has a crystal structure the same as the laser rod followed by baking so as to remove a gap and strain at an interface between the laser rod and the ceramic pipe after the baking further followed by polishing a surface of the ceramic pipe to form a ceramic skin layer, and thereby a composite laser rod is formed. In the composite laser rod, an influence due to fluctuation in the cooling capacity of cooling water or a heat sink is averaged by a non-doped skin layer, temperature fluctuation of the laser rod is suppressed, and an influence of vibration from the cooling water or a cooling fan can be suppressed. When the refractive index of the laser rod is made higher than that of the ceramic pipe, a high efficiency oscillation can be realized, and furthermore when the thermal conductivity of the ceramic pipe is made higher than that of the laser rod, the thermal lens effect can be alleviated.
摘要翻译：作为能够满足激光的位置稳定性和输出稳定性的复合激光棒，将激光激光元件掺杂的激光棒紧密地插入到具有晶体结构的非掺杂陶瓷管的中空部分与激光棒相同，随后烘烤，以便在烘烤之后除去激光棒和陶瓷管之间的界面处的间隙和应变，然后对陶瓷管的表面进行抛光以形成陶瓷表皮层，由此形成复合激光棒。在复合激光棒中，由于冷却水或散热器的冷却能力的波动引起的影响由非掺杂表层平均化，激光棒的温度波动被抑制，来自冷却水的振动的影响或者可以抑制冷却风扇。当激光棒的折射率高于陶瓷管的折射率时，可以实现高效率的振荡，此外，当陶瓷管的导热率高于激光棒的热导率时，热透镜效应可以缓解。

7. 发明申请

US20080025895A1 Translucent Lutetium Oxide Sinter, And Method For Manufacturing Same 有权
标题翻译：半透明氧化镥烧结剂及其制造方法相同
公开(公告)号：US20080025895A1
公开(公告)日：2008-01-31
申请号：US11630528
申请日：2004-09-28
申请人： Shunsuke Hosokawa , Hideki Yagi , Takagimi Yanagitani
发明人： Shunsuke Hosokawa , Hideki Yagi , Takagimi Yanagitani
IPC分类号： C01F17/00
CPC分类号： C04B35/50 , C04B35/62655 , C04B35/6303 , C04B35/64 , C04B35/6455 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3286 , C04B2235/444 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/602 , C04B2235/604 , C04B2235/656 , C04B2235/6581 , C04B2235/6582 , C04B2235/661 , C04B2235/72 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/85 , C04B2235/87 , C04B2235/9653 , H01J61/302
摘要： The present invention provides a lutetium oxide sinter to which yttrium is added in an amount of 100 mass ppm to 7000 mass ppm, whose average particle size is from 0.7 to 20 μm, and with which there is no precipitation of a hetero phase containing yttrium at the grain boundary.
摘要翻译：本发明提供一种镥氧化物烧结体，其中添加钇的量为100质量ppm至7000质量ppm，其平均粒度为0.7至20μm，并且不存在含钇异相的沉淀晶界。

8. 发明申请

US20070253456A1 Method for manufacturing a light-emitting device with a periodic structure in an active region 失效
标题翻译：在活性区域中制造具有周期性结构的发光装置的方法
公开(公告)号：US20070253456A1
公开(公告)日：2007-11-01
申请号：US11790486
申请日：2007-04-25
申请人： Hideki Yagi
发明人： Hideki Yagi
IPC分类号： H01S5/00 , H01S3/06 , H01S3/14
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/2275 , H01S5/341 , H01S5/3412
摘要： The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.
摘要翻译：本发明提供了一种发光器件，其中其有源区域可以避免被等离子体工艺损坏。该器件首先在半导体衬底上形成半导体层，接下来设置有蚀刻掩模。使用掩模，将衬底上的半导体层干蚀刻以形成具有凹槽和台面的周期性结构。通过OMVPE方法将有源区域埋入槽内。

9. 发明申请

US20050065140A1 Serotonine reuptake inhibitor 审中-公开
标题翻译： 5-羟色胺再摄取抑制剂
公开(公告)号：US20050065140A1
公开(公告)日：2005-03-24
申请号：US10498482
申请日：2002-12-12
申请人： Toru Kodo , Hideki Yagi , Akihito Dan , Shuji Masumoto , Naoya Kinomura , Koji Koyama
发明人： Toru Kodo , Hideki Yagi , Akihito Dan , Shuji Masumoto , Naoya Kinomura , Koji Koyama
IPC分类号： A61K31/445 , A61K31/4545 , A61K31/4709 , A61K31/5355 , A61P1/00 , A61P3/04 , A61P5/00 , A61P9/12 , A61P15/00 , A61P25/06 , A61P25/16 , A61P25/22 , A61P25/24 , A61P25/28 , A61P25/30 , A61P25/32 , A61P25/34 , A61P43/00 , C07D211/18 , C07D211/22 , C07D211/24 , C07D211/26 , C07D211/34 , C07D401/06 , C07D413/06 , C07D417/06 , A61K31/454 , A61K31/40 , A61K31/4025
CPC分类号： C07D401/06 , A61K31/445 , A61K31/4545 , A61K31/4709 , A61K31/5355 , C07D211/18 , C07D211/22 , C07D211/24 , C07D211/26 , C07D211/34 , C07D413/06 , C07D417/06
摘要： There is provided a selective serotonin reuptake inhibitor having affinity for serotonin 1A receptors which comprises a cyclic amine represented by the formula: wherein G represents a formula (2): a prodrug of said cyclic amine, or a pharmaceutically acceptable salt of said cyclic amine or prodrug, as an active ingredient.
摘要翻译：提供了对5-羟色胺1A受体具有亲和力的选择性5-羟色胺再摄取抑制剂，其包含由下式表示的环胺：其中G表示式（2）：所述环胺的前药或所述环胺的药学上可接受的盐或前药，作为活性成分。

10. 发明授权

US5843957A Naphthyridine derivatives 失效
标题翻译：萘啶衍生物
公开(公告)号：US5843957A
公开(公告)日：1998-12-01
申请号：US978146
申请日：1997-11-25
申请人： Masami Muraoka , Katsuhisa Ioriya , Naohito Ohashi , Hideki Yagi
发明人： Masami Muraoka , Katsuhisa Ioriya , Naohito Ohashi , Hideki Yagi
IPC分类号： A61K31/435 , C07D471/04
CPC分类号： A61K31/435 , C07D471/04
摘要： Naphthyridine derivative of the formula: ##STR1## wherein Ring A is substituted or unsubstituted pyridine, X is --N(R.sup.2)--CO--(R.sup.2 is H, alkyl, substituted alkyl, etc.), Z is a direct bond, --NH--, C.sub.1 -C.sub.2 alkylene, or --CH.dbd.CH--, Y is alkyl, substituted alkyl, aromatic group or substituted aromatic group, etc., B is alkyl, substituted alkyl, aromatic group or substituted aromatic group, or an acid addition salt thereof, these compounds having acyl-CoA: cholesterol acyl transferase inhibitory activity, and being useful as an agent for prophylaxis or treatment of hyperlipidemia, atherosclerosis, and related diseases thereof.
摘要翻译：下式的萘啶衍生物：其中环A是取代或未取代的吡啶，X是-N（R 2）-CO-（R 2是H，烷基，取代的烷基等），Z是直接键，-NH-，C 1 -C 2亚烷基或-CH = CH-，Y是烷基，取代的烷基，芳族基团或取代的芳族基团等，B是烷基，取代的烷基，芳族基团或取代的芳族基团，或这些化合物具有酰基-CoA：胆固醇酰基转移酶抑制活性，可用作预防或治疗高脂血症，动脉粥样硬化及其相关疾病的药剂。

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