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1. 发明授权

US07059453B2 Electromagnetic brake 失效
标题翻译：电磁制动器
公开(公告)号：US07059453B2
公开(公告)日：2006-06-13
申请号：US10607732
申请日：2003-06-26
申请人： Yoichiro Yamamoto , Katsuhiro Kitamura , Rikiya Kunii , Keiichi Ooiso , Kenji Honda , Akihiro Iwazaki
发明人： Yoichiro Yamamoto , Katsuhiro Kitamura , Rikiya Kunii , Keiichi Ooiso , Kenji Honda , Akihiro Iwazaki
IPC分类号： F16D55/36 , B60L7/00 , H01F7/08
CPC分类号： B60T13/748 , F16D2121/20
摘要： An electromagnetic brake interposed between a fixed housing and a rotating member. The electromagnetic brake includes a multiplate brake mechanism, a ringlike core member fixed through an annular brake guide inside the fixed housing, an exciting coil accommodated in an annular groove formed on the core member, and a ringlike armature member arranged radially outside of the core member. Each of the core member and the armature member has a plurality of tapering surfaces. The tapering surfaces of the core member are respectively complementary in shape to the tapering surfaces of the armature member. The electromagnetic brake further includes a cylindrical pressure member movable in a direction of pressing the multiplate brake mechanism. The cylindrical pressure member has one end fixed to the armature member and another end engaged with the multiplate brake mechanism.
摘要翻译：插入在固定壳体和旋转构件之间的电磁制动器。电磁制动器包括多个制动机构，通过固定壳体内的环形制动器引导件固定的环状芯构件，容纳在形成在芯构件上的环形槽中的励磁线圈，以及设置在芯构件的径向外侧的环形衔铁构件。芯构件和电枢构件中的每一个具有多个锥形表面。芯构件的锥形表面的形状分别与衔铁构件的锥形表面互补。电磁制动器还包括可在多个制动机构的按压方向上移动的圆柱形压力件。圆柱形压力构件具有固定到电枢构件的一端和与多重制动机构接合的另一端。

2. 发明授权

US06672443B2 Electromagnetic friction connecting apparatus 有权
标题翻译：电磁摩擦连接装置
公开(公告)号：US06672443B2
公开(公告)日：2004-01-06
申请号：US10198124
申请日：2002-07-19
申请人： Akihiro Iwazaki , Rikiya Kunii , Kenji Honda
发明人： Akihiro Iwazaki , Rikiya Kunii , Kenji Honda
IPC分类号： F16D27115
CPC分类号： F16D27/115 , F16D2027/001 , F16D2027/005
摘要： The object of the present invention is to provide an electromagnetic friction connecting apparatus, which allows the easier operations associated with the installation of an exciting coil or a search coil in a core element. Input and output terminals having second horizontal parts extending in the vehicle inward direction and second vertical parts extending from the ends of the second horizontal parts into the radial outward direction are provided for the exciting coil and the search coil. Each end of the second vertical parts is situated radially inside a periphery surface of the exciting coil. Holes which allow the respective ends of the second vertical parts of the input and output terminals to face the outside are made on the core element and the housing. They are connected to the ends of the second vertical parts of the input and output terminals by inserting couplers into these holes.
摘要翻译：本发明的目的是提供一种电磁摩擦连接装置，其允许与在芯元件中安装励磁线圈或搜索线圈相关联的更容易的操作。用于励磁线圈和搜索线圈的输入和输出端子具有在车辆向内方向上延伸的第二水平部分和从第二水平部分的端部延伸到径向向外方向的第二垂直部分。第二垂直部分的每个端部位于激励线圈的周边表面的径向内侧。允许输入和输出端子的第二垂直部分的相应端部面向外部的孔在芯元件和壳体上形成。它们通过将耦合器插入这些孔中而连接到输入和输出端子的第二垂直部分的端部。

3. 发明授权

US06059067A Yaw moment control process and apparatus for a vehicle 失效
标题翻译：用于车辆的偏转力矩控制过程和装置
公开(公告)号：US06059067A
公开(公告)日：2000-05-09
申请号：US857563
申请日：1997-05-16
申请人： Yasuji Shibahata , Atsushi Mori , Katsuhiro Kitamura , Kenji Honda , Nobuharu Kuriki , Shinji Ohkuma
发明人： Yasuji Shibahata , Atsushi Mori , Katsuhiro Kitamura , Kenji Honda , Nobuharu Kuriki , Shinji Ohkuma
IPC分类号： B60K23/04 , B60T8/1755 , B62D37/00 , F16D48/12 , B60K17/00
CPC分类号： B60T8/17555 , B60K23/04 , B60W40/11 , B60W40/112 , B60W40/114 , B62D37/00 , B60W2520/125 , B60W2520/14
摘要： A feed-forward control section controls, in a feed-forward manner, left and right hydraulic clutches C.sub.L and C.sub.R of a driving force distributing device by presuming such a driving force distribution amount .DELTA.T that a yaw rate corresponding to a turning state of a vehicle is obtained, based on an engine torque, an engine revolution-number, a vehicle speed, a steering angle and a lateral acceleration. On the other hand, a feedback control section calculates a deviation between a reference yaw rate calculated from the vehicle speed and the lateral acceleration and an actual yaw rate detected by a yaw rate sensor, and corrects the driving force distribution amount .DELTA.T calculating in the driving force distributing device in order to converge the deviation into zero. Therefore, even if the driving force distribution amount becomes excessive due to the feed-forward control to produce an over-steering tendency in the vehicle, this over-steering tendency can be eliminated by the feedback control to stabilize the behavior of the vehicle.
摘要翻译：前馈控制部通过将这样的驱动力分配量DELTA T设定为对应于转向状态的横摆率，以前馈方式控制驱动力分配装置的左右液压离合器CL和CR 基于发动机扭矩，发动机转数，车速，转向角和横向加速度获得车辆。另一方面，反馈控制部分计算从车速计算的参考横摆角速度与横向加速度之间的偏差和由横摆率传感器检测到的实际横摆角速度之间的偏差，并且校正驱动力分布量DELTA T 驱动力分配装置，以将偏差收敛到零。因此，即使驱动力分配量由于前馈控制而变得过大，从而在车辆中产生过度转向倾向，也可以通过反馈控制来消除车辆的过度转向倾向，以稳定车辆的行为。

4. 发明授权

US5893812A Driving force distributing system for vehicle 失效
标题翻译：车辆驱动力分配系统
公开(公告)号：US5893812A
公开(公告)日：1999-04-13
申请号：US857562
申请日：1997-05-16
申请人： Katsuyuki Narai , Katsuhiro Kitamura , Kazuyoshi Kuwahara , Kenji Honda , Tetsushi Asano , Yasuji Shibahata , Kazuhiro Wada , Koji Yokomizo
发明人： Katsuyuki Narai , Katsuhiro Kitamura , Kazuyoshi Kuwahara , Kenji Honda , Tetsushi Asano , Yasuji Shibahata , Kazuhiro Wada , Koji Yokomizo
IPC分类号： B60K17/00 , B60K17/16 , B60K23/04 , F16H48/20
CPC分类号： B60K17/16 , B60K23/04 , B60K17/00
摘要： A driving force distributing device is provided for distributing a driving force of an engine to the left and right wheels of a vehicle by bringing a pair of hydraulic clutches into and out of their engaged states. The distributing device includes a hydraulic pump mounted within a casing thereof and driven through gears by a half shaft connected to one of the wheels. An oil passage interconnects the hydraulic pump and the hydraulic clutches, the oil passage being defined in a casing. A valve block is coupled to an upper surface of the casing. Thus, the oil passages interconnecting the hydraulic pump and the hydraulic clutches of the driving force distributing device can be compactly formed.
摘要翻译：驱动力分配装置用于通过使一对液压离合器进入和离开其接合状态来分配发动机的驱动力到车辆的左右轮。分配装置包括安装在其壳体内的液压泵，并通过连接到一个车轮的半轴通过齿轮驱动。油路将液压泵和液压离合器相互连接，油路限定在壳体中。阀块联接到壳体的上表面。因此，可以紧凑地形成将液压泵与驱动力分配装置的液压离合器相互连接的油路。

5. 再颁专利

USRE42180E1 Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same 有权
标题翻译：在源极/漏极区域上具有金属硅化物层和栅电极的半导体器件及其制造方法
公开(公告)号：USRE42180E1
公开(公告)日：2011-03-01
申请号：US12212105
申请日：2008-09-17
申请人： Hisato Oyamatsu , Kenji Honda
发明人： Hisato Oyamatsu , Kenji Honda
IPC分类号： H01L31/113 , H01L29/76
CPC分类号： H01L21/28568 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L27/0207 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底中的元件隔离区域，形成在半导体衬底中并在元件隔离区域外部并且在其表面上形成有金属硅化物层的真实元件区域，以及虚拟元件元件区域形成在半导体衬底中并且在元件隔离区域外部并且在其表面上形成有金属硅化物层。在包括元件区域的1μm平方的感兴趣范围内占有的实数元素区域和虚设元素区域的图案区域之和的比率为25％以上。

6. 发明申请

US20080259680A1 Memory Element and Method for Manufacturing Same 失效
标题翻译：记忆元素及其制造方法
公开(公告)号：US20080259680A1
公开(公告)日：2008-10-23
申请号：US11575091
申请日：2005-11-04
申请人： Hiroyuki Nishide , Kenji Honda , Yasunori Yonekuta , Takashi Kurata , Shigemoto Abe
发明人： Hiroyuki Nishide , Kenji Honda , Yasunori Yonekuta , Takashi Kurata , Shigemoto Abe
IPC分类号： G11C11/34 , H01S4/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/15 , H01L27/285 , H01L51/0595 , Y10T29/49002
摘要： A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.
摘要翻译：一种新颖的非易失性存储元件，其可以通过使用有机材料通过简单且高收率的方法制造并具有高的开/关比率，以及制造这种非易失性存储元件的方法。在阳极层（12）和阴极层（16）之间设置由绝缘自由基聚合物构成的开关层（14）。此外，在开关层（14）和阳极层（12）之间设置有空穴注入传输层（13），以及在开关层（14）和阴极层（16）之间的电子注入传输层（15））。在切换层和相邻层之间设置中间层。自由基聚合物优选为氮氧自由基聚合物。通过湿法堆叠形成开关层（14），空穴注入传输层（13）和电子注入传输层（15）。

7. 发明授权

US07365949B2 CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction 有权
标题翻译： CPP巨磁阻头包括在高度方向上延伸的钉扎磁性层
公开(公告)号：US07365949B2
公开(公告)日：2008-04-29
申请号：US11141543
申请日：2005-05-31
申请人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
发明人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39 , G11B5/3163 , G11B5/398
摘要： A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.
摘要翻译： CPP巨磁阻头包括下屏蔽层; 上屏蔽层; 和在下屏蔽层和上屏蔽层之间的巨磁阻元件（GMR）。 GMR包括非磁性材料层; 钉扎磁性层; 和自由磁性层。被钉扎层和自由层与其间设置的非磁性层层叠。 A电流垂直于GMR的膜平面流动，被钉扎的磁性层在高度方向上比在轨道宽度方向上延伸更长，并且包括GMR中的第一部分。第一部分设置在非磁性层和自由层的上方或下方。第二部分在非磁性层的后面，高度方向上是自由层。第一和第二部分在同一平面内。第一部分中的钉扎宽度方向上的被钉扎层的宽度大于第二部分的宽度。

8. 发明申请

US20050106833A1 Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same 有权
标题翻译：在源极/漏极区域上具有金属硅化物层和栅电极的半导体器件及其制造方法
公开(公告)号：US20050106833A1
公开(公告)日：2005-05-19
申请号：US10837748
申请日：2004-05-04
申请人： Hisato Oyamatsu , Kenji Honda
发明人： Hisato Oyamatsu , Kenji Honda
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L21/76 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L27/02 , H01L27/04 , H01L27/088 , H01L29/78 , H01L21/00 , H01L21/44 , H01L21/4763 , H01L21/84
CPC分类号： H01L21/28568 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L27/0207 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底中的元件隔离区域，形成在半导体衬底中并在元件隔离区域外部并且在其表面上形成有金属硅化物层的真实元件区域，以及虚拟元件元件区域形成在半导体衬底中并且在元件隔离区域外部并且在其表面上形成有金属硅化物层。在包括元件区域的1个平均兴趣范围内占有的实数元素区域和虚设元素区域的图案区域之和的比率为25％以上。

9. 发明授权

US06791804B2 Magnetoresistive-effect device and method for manufacturing the same 失效
标题翻译：磁阻效应器件及其制造方法
公开(公告)号：US06791804B2
公开(公告)日：2004-09-14
申请号：US10337479
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

10. 发明授权

US06690554B2 Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same 失效
标题翻译：具有扩展AFM层的磁阻效应器件及其制造方法
公开(公告)号：US06690554B2
公开(公告)日：2004-02-10
申请号：US10337188
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

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