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1. 发明授权

US06587315B1 Magnetoresistive-effect device with a magnetic coupling junction 失效
标题翻译：具有磁耦合结的磁阻效应器件
公开(公告)号：US06587315B1
公开(公告)日：2003-07-01
申请号：US09487691
申请日：2000-01-19
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

2. 发明授权

US06690554B2 Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same 失效
标题翻译：具有扩展AFM层的磁阻效应器件及其制造方法
公开(公告)号：US06690554B2
公开(公告)日：2004-02-10
申请号：US10337188
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

3. 发明授权

US06791804B2 Magnetoresistive-effect device and method for manufacturing the same 失效
标题翻译：磁阻效应器件及其制造方法
公开(公告)号：US06791804B2
公开(公告)日：2004-09-14
申请号：US10337479
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

4. 发明授权

US06538858B1 Spin-valve thin film element and method of manufacturing the same 失效
标题翻译：旋转阀薄膜元件及其制造方法
公开(公告)号：US06538858B1
公开(公告)日：2003-03-25
申请号：US09491397
申请日：2000-01-25
申请人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3218 , H01F10/324 , H01F10/3268 , H01F41/325
摘要： In the present invention, hard bias layers are arranged in the same layer level as a free magnetic layer, and the upper surfaces of the hard bias layers are joined to the sides of a lamination at positions lower than the upper edges of the sides of the lamination above a substrate. The upper surfaces of the hard bias layers are also joined to the sides of the lamination at the same position as or positions lower than the uppermost position of the hard bias layers above the substrate. A spin-valve thin film element is provided having a decrease in an effective magnetic field applied to the free magnetic layer, and a magnetic field in the direction opposite to the magnetization direction of the free magnetic layer, permitting sufficient control of the magnetic domain of the free magnetic layer, and exhibiting excellent stability. The present invention also provides a method of manufacturing the spin-valve thin film element.
摘要翻译：在本发明中，将硬偏置层设置在与自由磁性层相同的层次上，并且将硬偏置层的上表面与叠层的侧面接合，层压在基材上方。硬偏置层的上表面也在与基板上方的硬偏置层的最上位置相同的位置处或者位于比位置低的位置处接合到层压体的侧面。提供了一种自旋阀薄膜元件，其具有施加到自由磁性层的有效磁场的减小和与自由磁性层的磁化方向相反的方向的磁场，从而允许充分控制磁畴的磁畴自由磁性层，稳定性优异。本发明还提供一种制造自旋阀薄膜元件的方法。

5. 发明授权

US07054115B2 Spin-valve thin-film magnetic element and method for making the same 有权
标题翻译：旋转阀薄膜磁性元件及其制造方法
公开(公告)号：US07054115B2
公开(公告)日：2006-05-30
申请号：US09774781
申请日：2001-01-30
申请人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/302 , H01F41/325 , Y10T29/49034 , Y10T29/49044
摘要： A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.
摘要翻译：自旋阀薄膜磁性元件包括基板，形成在其上的复合物，以及形成在复合体两侧的电极层。复合材料包括反铁磁性层，钉扎磁性层，非磁性导电层，自由磁性层，平均自由路径延伸层和交换偏置层。平均自由路径延伸层可以是背层或镜面反射层。平均自由路径延伸层延长了自旋阀薄膜磁性元件中自旋向上传导电子的平均自由程。该自旋阀薄膜磁性元件满足趋向于较窄轨道宽度的趋势。

6. 发明授权

US06756135B2 Spin valve thin-film magnetic element 失效
标题翻译：自旋阀薄膜磁性元件
公开(公告)号：US06756135B2
公开(公告)日：2004-06-29
申请号：US09879381
申请日：2001-06-12
申请人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3143 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/1936 , H01F10/3268 , H01F41/325 , Y10S428/90 , Y10T428/1143 , Y10T428/1186 , Y10T428/12465 , Y10T428/1259
摘要： A spin valve thin-film magnetic element has an improved rate of change in resistance (&Dgr;R/R) that can be used for a narrower magnetic track. The spin valve thin-film magnetic element has a laminate that include an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic conductive layer, a free magnetic layer, a back layer, specular-reflection layers and a pair of electrode layers formed at the two sides of the laminate. Preferably the specular reflection layer includes an oxide, such as &agr;-Fe2O3 or NiO, or a half-metal Heusler alloy, such as NiMnSb or PtMnSb.
摘要翻译：自旋阀薄膜磁性元件具有可用于较窄磁道的电阻变化率（DeltaR / R）。自旋阀薄膜磁性元件具有包括反铁磁层，钉扎磁性层，非磁性导电层，自由磁性层，背层，镜面反射层和形成在层压板的两面。优选地，镜面反射层包括氧化物，例如α-Fe 2 O 3或NiO，或半金属Heusler合金，例如NiMnSb或PtMnSb。

7. 发明授权

US06847508B2 Spin valve thin film magnetic element and thin film magnetic head 有权
标题翻译：旋转阀薄膜磁性元件和薄膜磁头
公开(公告)号：US06847508B2
公开(公告)日：2005-01-25
申请号：US09727180
申请日：2000-11-30
申请人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa , Yoshihiko Kakihara , Kenji Honda
发明人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa , Yoshihiko Kakihara , Kenji Honda
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/32 , H01L43/08 , G11B5/127 , G11B5/339
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F41/325
摘要： The present invention provides a spin valve thin film magnetic element including a laminate in which an antiferromagnetic layer, a pinned magnetic layer provided in contact with the antiferromagnetic layer so that the magnetization direction is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer provided in contact with the pinned magnetic layer, a second free magnetic layer provided in contact with the nonmagnetic conductive layer, a nonmagnetic intermediate layer provided in contact with the second free magnetic layer, a first free magnetic layer provided in contact with the nonmagnetic intermediate layer and antiferromagnetically coupled with the second free magnetic layer to form a ferrimagnetic state together with the second free magnetic layer, and a backed layer provided in contact with the first free magnetic layer and having higher conductivity than the first free magnetic layer are laminated. The present invention also provides a magnetic head using the spin valve thin film magnetic element.
摘要翻译：本发明提供了一种自旋阀薄膜磁性元件，其包括层叠体，其中反铁磁层，与反铁磁性层接触的被钉扎的磁性层，使得磁化方向被与反铁磁性层的交换耦合磁场固定，设置成与被钉扎的磁性层接触的非磁性导电层，与非磁性导电层接触设置的第二自由磁性层，与第二自由磁性层接触设置的非磁性中间层，与第二自由磁性层接触的第一自由磁性层非磁性中间层与第二自由磁性层反铁磁耦合以与第二自由磁性层一起形成亚铁磁状态，并且与第一自由磁性层接触并具有比第一自由磁性层更高的导电性的背衬层被层压。本发明还提供一种使用自旋阀薄膜磁性元件的磁头。

8. 发明授权

US06762916B2 Thin-film magnetic head with low barkhausen noise and floating-type magnetic head therewith 失效
标题翻译：具有低巴克豪森噪声和浮动式磁头的薄膜磁头
公开(公告)号：US06762916B2
公开(公告)日：2004-07-13
申请号：US09751267
申请日：2000-12-29
申请人： Daigo Aoki , Yoshihiko Kakihara
发明人： Daigo Aoki , Yoshihiko Kakihara
IPC分类号： G11B530
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A thin-film magnetic head includes a spin-valve thin-film magnetic element, first and second insulating layers, and first and second shielding layers. The spin-valve thin-film magnetic element includes a free magnetic layer, a nonmagnetic conductive layer, a pinned magnetic layer, an antiferromagnetic layer, a pair of bias layers, and a pair of conductive layers. The pair of conductive layers is located on one side in the thickness direction of the free magnetic layer, and the pair of bias layers is located on the other side in the thickness direction of the free magnetic layer, is disposed on both sides in the track width direction of at least a portion of the second insulating layer, and is in contact with the free magnetic layer.
摘要翻译：薄膜磁头包括自旋阀薄膜磁性元件，第一和第二绝缘层以及第一和第二屏蔽层。自旋阀薄膜磁性元件包括自由磁性层，非磁性导电层，钉扎磁性层，反铁磁层，一对偏置层和一对导电层。一对导电层位于自由磁性层的厚度方向的一侧，该对偏置层位于自由磁性层的厚度方向的另一侧，配置在轨道的两侧第二绝缘层的至少一部分的宽度方向，并且与自由磁性层接触。

9. 发明授权

US06538860B1 Spin-valve type magnetoresistive element capable of preventing barkhausen noise 失效
标题翻译：旋转阀式磁阻元件能够防止巴克豪森噪音
公开(公告)号：US06538860B1
公开(公告)日：2003-03-25
申请号：US09644720
申请日：2000-08-23
申请人： Yoshihiko Kakihara , Kiyoshi Sato
发明人： Yoshihiko Kakihara , Kiyoshi Sato
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3268
摘要： A magnetoresistive element includes a nonmagnetic conductive layer, first and second ferromagnetic layers which are conductive and which sandwich the nonmagnetic conductive layer, an antiferromagnetic layer magnetically coupled to the first ferromagnetic layer for fixing the magnetization direction of the first ferromagnetic layer, a bias layer magnetically coupled to the second ferromagnetic layer for aligning the magnetization direction of the second ferromagnetic layer in a direction crossing to the magnetization direction of the first ferromagnetic layer, and a pair of electrode layers for applying a sensing current to the first and second ferromagnetic layers and the nonmagnetic conductive layer. The antiferromagnetic layer, the first ferromagnetic layer, the nonmagnetic conductive layer, the second ferromagnetic layer, and the bias layer are deposited in that order. The pair of electrode layers are disposed on both ends of the bias layer, and the bias layer at a position which is not covered by the pair of electrode layers is modified to form a nonmagnetic layer for determining a track width. A method of fabricating the magnetoresistive element is also disclosed.
摘要翻译：磁阻元件包括非磁性导电层，第一和第二铁磁层，其是导电的并且夹着非磁性导电层;磁铁耦合到第一铁磁层的反铁磁层，用于固定第一铁磁层的磁化方向;磁性层耦合到所述第二铁磁层，用于在与所述第一铁磁层的磁化方向交叉的方向上对准所述第二铁磁层的磁化方向;以及一对电极层，用于向所述第一和第二铁磁层施加感测电流，非磁性导电层。反铁磁层，第一铁磁层，非磁性导电层，第二铁磁层和偏置层以该顺序沉积。一对电极层设置在偏置层的两端，并且在未被一对电极层覆盖的位置处的偏置层被修改以形成用于确定轨道宽度的非磁性层。还公开了制造磁阻元件的方法。

10. 发明授权

US5992004A Method for producing a thin film magnetic head 失效
标题翻译：薄膜磁头的制造方法
公开(公告)号：US5992004A
公开(公告)日：1999-11-30
申请号：US833405
申请日：1997-04-04
申请人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
发明人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046
摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.
摘要翻译：在非磁性材料层上形成纵向偏置层和电极层。通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层在上述结构上形成固定磁性层和偏置层。然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。所得到的三层膜或自旋阀膜具有优异的磁检测特性。此外，纵向偏置层与磁阻效应层具有良好的磁耦合。

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