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    • 1. 发明授权
    • Magnetoresistive-effect device with a magnetic coupling junction
    • 具有磁耦合结的磁阻效应器件
    • US06587315B1
    • 2003-07-01
    • US09487691
    • 2000-01-19
    • Daigo AokiNaoya HasegawaKenji HondaKiyoshi SatoYoshihiko Kakihara
    • Daigo AokiNaoya HasegawaKenji HondaKiyoshi SatoYoshihiko Kakihara
    • G11B539
    • H01L43/08B82Y10/00B82Y25/00G11B5/3903G11B2005/3996H01L43/12Y10T29/49044
    • A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
    • 磁阻效应器件包括多层膜,布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下,形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上,感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时,直流电阻降低,同时改善了器件的再现特性。
    • 2. 发明授权
    • Magnetoresistive-effect device and method for manufacturing the same
    • 磁阻效应器件及其制造方法
    • US06791804B2
    • 2004-09-14
    • US10337479
    • 2003-01-06
    • Daigo AokiNaoya HasegawaKenji HondaYoshihiko Kakihara
    • Daigo AokiNaoya HasegawaKenji HondaYoshihiko Kakihara
    • G11B539
    • H01L43/08B82Y10/00B82Y25/00G11B5/3903G11B2005/3996H01L43/12Y10T29/49044
    • A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
    • 磁阻效应器件包括多层膜,布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下,形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上,感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时,直流电阻降低,同时改善了器件的再现特性。