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1. 发明授权

US07243412B2 Method of manufacturing a magnetic head using a magneto-resistive effect 有权
标题翻译：使用磁阻效应制造磁头的方法
公开(公告)号：US07243412B2
公开(公告)日：2007-07-17
申请号：US10218247
申请日：2002-08-14
申请人： Akio Furukawa , Yoshihiko Kakihara
发明人： Akio Furukawa , Yoshihiko Kakihara
IPC分类号： G11B5/187
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： A method of manufacturing a magnetic head including a magnetic sensing portion formed of a magnetoresistive effect element, a magnetoresistive effect magnetic head manufacturing method depositing, via a film deposition process, a lamination layer having a free layer comprised of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer comprised of a ferromagnetic material, an antiferromagnetic layer for fixing the magnetization of said fixed layer, a magnetic flux introducing layer with a tip end of which is opposed to a surface which is brought in contact with or opposed to a magnetic recording medium, and a spacer layer interposed between said free layer and said fixed layer; patterning at least said free layer and said fixed layer with a mask such that opposing side surfaces of said free layer and said fixed layer are formed of one continuous surface; and forming hard magnetic layers having high or low resistance for maintaining a magnetic stability of said free layer in contact with said opposing side surfaces.
摘要翻译：一种制造磁头的方法，该磁头包括由磁阻效应元件形成的磁感测部分，磁阻效应磁头制造方法通过膜沉积工艺沉积具有由软磁性材料构成的自由层的层压层，磁化响应于外部磁场而旋转，由铁磁材料构成的固定层，用于固定所述固定层的磁化的反铁磁层，其末端与其表面相对的磁通量引入层与磁记录介质接触或相对，以及插入在所述自由层和所述固定层之间的间隔层; 使用掩模对至少所述自由层和所述固定层进行图案化，使得所述自由层和所述固定层的相对侧表面由一个连续表面形成; 以及形成具有高或低电阻的硬磁性层，以保持所述自由层与所述相对的侧表面接触的磁稳定性。

2. 发明授权

US06614629B1 Thin film magnetic head providing an essentially warp-free upper shield layer and floating magnetic head using the same 失效
标题翻译：薄膜磁头提供基本无翘曲的上屏蔽层和使用其的浮动磁头
公开(公告)号：US06614629B1
公开(公告)日：2003-09-02
申请号：US09626475
申请日：2000-07-26
申请人： Yoshihiko Kakihara
发明人： Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903
摘要： The present invention provides a thin film magnetic head which is prevented from producing a great step in an upper shield layer and which can decrease the probability of a short circuit between the upper shield layer or lower shield layer and a spin-valve thin film magnetic element. The thin film magnetic head includes a spin-valve thin film magnetic element including a lamination of a free magnetic layer, a nonmagnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer, a pair of conductive layers for supplying a sensing current to the free magnetic layer, and a pair of insulating bias layers for orienting the magnetization direction of the free magnetic layer; and a pair of shield layers laminated on both sides of the spin-valve thin film magnetic element in the direction of the thickness thereof. The thin film magnetic head also has a projection formed on one of the shield layers to project toward the spin-valve thin film magnetic element side so that the pair of insulating bias layers are arranged on both sides of the projection in the direction of the track width.
摘要翻译：本发明提供一种薄膜磁头，其防止在上屏蔽层中产生大的台阶，并且可以降低上屏蔽层或下屏蔽层与自旋阀薄膜磁性元件之间短路的可能性。薄膜磁头包括自由阀薄膜磁性元件，该自旋阀薄膜磁性元件包括自由磁性层，非磁性导电层，钉扎磁性层和反铁磁性层的叠层，用于将传感电流提供给自由磁性层和用于使自由磁性层的磁化方向定向的一对绝缘偏压层; 以及在该自旋阀薄膜磁性元件的厚度方向上层叠的一对屏蔽层。薄膜磁头还具有形成在其中一个屏蔽层上的突起，以朝向自旋阀薄膜磁性元件侧突出，使得该对绝缘偏压层在轨道的方向上布置在突起的两侧宽度。

3. 发明授权

US06201669B1 Magnetoresistive element and its manufacturing method 失效
标题翻译：磁阻元件及其制造方法
公开(公告)号：US06201669B1
公开(公告)日：2001-03-13
申请号：US09208388
申请日：1998-12-09
申请人： Yoshihiko Kakihara
发明人： Yoshihiko Kakihara
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： Both of decreasing the direct current resistance and flattening of the top face of the element can be simultaneously attained by forming a first lead layer under the bottom side of a laminated body as well as by reducing the film thickness of a second lead layer located at both sides of the laminated body. Excessive signals from outside of the area of the track width Tw are not picked up during regeneration operation since the width of the laminated body is adjusted to be nearly equal to the track width Tw thereby enabling to attain a good regenerative characteristic.
摘要翻译：通过在层压体的底侧形成第一引线层，以及通过降低位于两者的第二引线层的膜厚度，可以同时实现降低元件的顶面的直流电阻和平坦化两者层压体侧面。由于层叠体的宽度被调整为几乎等于轨迹宽度Tw，因此在再生操作期间不会从轨道宽度Tw的区域外部的外部获得过多的信号，从而能够获得良好的再生特性。

4. 发明授权

US07054115B2 Spin-valve thin-film magnetic element and method for making the same 有权
标题翻译：旋转阀薄膜磁性元件及其制造方法
公开(公告)号：US07054115B2
公开(公告)日：2006-05-30
申请号：US09774781
申请日：2001-01-30
申请人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/302 , H01F41/325 , Y10T29/49034 , Y10T29/49044
摘要： A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.
摘要翻译：自旋阀薄膜磁性元件包括基板，形成在其上的复合物，以及形成在复合体两侧的电极层。复合材料包括反铁磁性层，钉扎磁性层，非磁性导电层，自由磁性层，平均自由路径延伸层和交换偏置层。平均自由路径延伸层可以是背层或镜面反射层。平均自由路径延伸层延长了自旋阀薄膜磁性元件中自旋向上传导电子的平均自由程。该自旋阀薄膜磁性元件满足趋向于较窄轨道宽度的趋势。

5. 发明授权

US06756135B2 Spin valve thin-film magnetic element 失效
标题翻译：自旋阀薄膜磁性元件
公开(公告)号：US06756135B2
公开(公告)日：2004-06-29
申请号：US09879381
申请日：2001-06-12
申请人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3143 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/1936 , H01F10/3268 , H01F41/325 , Y10S428/90 , Y10T428/1143 , Y10T428/1186 , Y10T428/12465 , Y10T428/1259
摘要： A spin valve thin-film magnetic element has an improved rate of change in resistance (&Dgr;R/R) that can be used for a narrower magnetic track. The spin valve thin-film magnetic element has a laminate that include an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic conductive layer, a free magnetic layer, a back layer, specular-reflection layers and a pair of electrode layers formed at the two sides of the laminate. Preferably the specular reflection layer includes an oxide, such as &agr;-Fe2O3 or NiO, or a half-metal Heusler alloy, such as NiMnSb or PtMnSb.
摘要翻译：自旋阀薄膜磁性元件具有可用于较窄磁道的电阻变化率（DeltaR / R）。自旋阀薄膜磁性元件具有包括反铁磁层，钉扎磁性层，非磁性导电层，自由磁性层，背层，镜面反射层和形成在层压板的两面。优选地，镜面反射层包括氧化物，例如α-Fe 2 O 3或NiO，或半金属Heusler合金，例如NiMnSb或PtMnSb。

6. 发明授权

US06663987B2 Magnetroresistive element for effective sensing current flowing into multilayer film, and process for manufacturing the same 失效
标题翻译：用于有效感应电流流入多层膜的磁阻元件及其制造方法
公开(公告)号：US06663987B2
公开(公告)日：2003-12-16
申请号：US09725542
申请日：2000-11-29
申请人： Yoshihiko Kakihara
发明人： Yoshihiko Kakihara
IPC分类号： B32B1900
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , Y10T428/1121 , Y10T428/1186 , Y10T428/12611 , Y10T428/12736
摘要： A magnetoresistive element includes an insulating layer formed between electrode layers, and the electrode layers are formed on a multilayer film so as to be in contact with the sides of the insulating layer. The thickness of the electrode layers can therefore be kept thick even at front end faces and a sensing current can flow into the multilayer film always at a constant level.
摘要翻译：磁阻元件包括在电极层之间形成的绝缘层，并且电极层形成在多层膜上以与绝缘层的侧面接触。因此，即使在前端面，电极层的厚度也可以保持较厚，并且感测电流可以始终以恒定的水平流入多层膜。

7. 发明授权

US06538860B1 Spin-valve type magnetoresistive element capable of preventing barkhausen noise 失效
标题翻译：旋转阀式磁阻元件能够防止巴克豪森噪音
公开(公告)号：US06538860B1
公开(公告)日：2003-03-25
申请号：US09644720
申请日：2000-08-23
申请人： Yoshihiko Kakihara , Kiyoshi Sato
发明人： Yoshihiko Kakihara , Kiyoshi Sato
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3268
摘要： A magnetoresistive element includes a nonmagnetic conductive layer, first and second ferromagnetic layers which are conductive and which sandwich the nonmagnetic conductive layer, an antiferromagnetic layer magnetically coupled to the first ferromagnetic layer for fixing the magnetization direction of the first ferromagnetic layer, a bias layer magnetically coupled to the second ferromagnetic layer for aligning the magnetization direction of the second ferromagnetic layer in a direction crossing to the magnetization direction of the first ferromagnetic layer, and a pair of electrode layers for applying a sensing current to the first and second ferromagnetic layers and the nonmagnetic conductive layer. The antiferromagnetic layer, the first ferromagnetic layer, the nonmagnetic conductive layer, the second ferromagnetic layer, and the bias layer are deposited in that order. The pair of electrode layers are disposed on both ends of the bias layer, and the bias layer at a position which is not covered by the pair of electrode layers is modified to form a nonmagnetic layer for determining a track width. A method of fabricating the magnetoresistive element is also disclosed.
摘要翻译：磁阻元件包括非磁性导电层，第一和第二铁磁层，其是导电的并且夹着非磁性导电层;磁铁耦合到第一铁磁层的反铁磁层，用于固定第一铁磁层的磁化方向;磁性层耦合到所述第二铁磁层，用于在与所述第一铁磁层的磁化方向交叉的方向上对准所述第二铁磁层的磁化方向;以及一对电极层，用于向所述第一和第二铁磁层施加感测电流，非磁性导电层。反铁磁层，第一铁磁层，非磁性导电层，第二铁磁层和偏置层以该顺序沉积。一对电极层设置在偏置层的两端，并且在未被一对电极层覆盖的位置处的偏置层被修改以形成用于确定轨道宽度的非磁性层。还公开了制造磁阻元件的方法。

8. 发明授权

US5992004A Method for producing a thin film magnetic head 失效
标题翻译：薄膜磁头的制造方法
公开(公告)号：US5992004A
公开(公告)日：1999-11-30
申请号：US833405
申请日：1997-04-04
申请人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
发明人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046
摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.
摘要翻译：在非磁性材料层上形成纵向偏置层和电极层。通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层在上述结构上形成固定磁性层和偏置层。然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。所得到的三层膜或自旋阀膜具有优异的磁检测特性。此外，纵向偏置层与磁阻效应层具有良好的磁耦合。

9. 发明授权

US07259943B2 Magnetic head having a current-perpendicular-to-the-plane structure and using a magneto-resistive effect 失效
标题翻译：具有电流垂直于平面结构并使用磁阻效应的磁头
公开(公告)号：US07259943B2
公开(公告)日：2007-08-21
申请号：US10826127
申请日：2004-04-16
申请人： Akio Furukawa , Yoshihiko Kakihara
发明人： Akio Furukawa , Yoshihiko Kakihara
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： A magnetic head using magnetoresistive effect comprising a magnetic sensing portion formed of a magnetoresistive effect element. The magnetic sensing portion includes a lamination layer structure portion which includes at least a free layer, a fixed layer made of a ferromagnetic material, an antiferromagnetic layer and a spacer layer interposed between the free layer and the fixed layer are laminated with each other. The lamination layer structure portion includes a magnetic flux introducing layer. The lamination layer structure portion has at its lamination layer direction opposing side surfaces formed of one flat surface or continuous one curved surface over at least the free layer, the spacer layer and the fixed layer. A hard magnetic layer for maintaining a magnetic stability of the free layer is disposed in direct contact with the opposing surfaces or through an insulating layer.
摘要翻译：一种使用磁阻效应的磁头，包括由磁阻效应元件形成的磁感测部分。磁感应部分包括层压层结构部分，其至少包括自由层，由铁磁材料制成的固定层，反铁磁层和插入在自由层和固定层之间的间隔层彼此层叠。层叠层结构部分包括磁通量引入层。层压层结构部分在其层叠层方向上具有相对于至少自由层，间隔层和固定层上的一个平坦表面或连续的一个曲面形成的侧表面。用于保持自由层的磁稳定性的硬磁性层被设置成与相对表面直接接触或通过绝缘层。

10. 发明授权

US06791804B2 Magnetoresistive-effect device and method for manufacturing the same 失效
标题翻译：磁阻效应器件及其制造方法
公开(公告)号：US06791804B2
公开(公告)日：2004-09-14
申请号：US10337479
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

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