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    • 2. 发明申请
    • Data Compression for Producing Spectrum Traces
    • 数据压缩生成光谱追踪
    • US20080270440A1
    • 2008-10-30
    • US12092251
    • 2006-11-01
    • Yi HeKathryn A. Engholm
    • Yi HeKathryn A. Engholm
    • G06F17/30
    • G10L19/0212G01R23/16
    • A data compression method for producing spectrum traces may divide signal data into multiple transform frames, produce a spectrum trace for each transform frame using a time domain to frequency domain transform, and combine the multiple frames from the analysis window into a single spectrum trace according to the spectrum amplitude of corresponding points in each frame. A device comprising a port to receive a signal or data set; and circuitry in communication with the port to segment the data record into frames, multiply each frame by a windowing function, transform each frame from a time domain representation to a frequency domain representation, and compress the frames using a detection function to create a single spectrum trace. This data compression provides flexibility to allow users to select analysis length, resolution bandwidth (RBW) and number of trace points independently, eliminating the coupling often found in traditional approaches.
    • 用于产生频谱轨迹的数据压缩方法可以将信号数据划分为多个变换帧,使用时域到频域变换产生每个变换帧的频谱轨迹,并根据分析窗口将多个帧从分析窗口组合成单个频谱轨迹 每帧中对应点的频谱幅度。 一种设备,包括用于接收信号或数据集的端口; 以及与端口通信的电路,用于将数据记录分割成帧,将每帧乘以加窗函数,将每个帧从时域表示转换为频域表示,并使用检测功能压缩帧以创建单个频谱 跟踪。 该数据压缩提供了灵活性,允许用户独立地选择分析长度,分辨率带宽(RBW)和跟踪点数量,消除了传统方法中常见的耦合。
    • 6. 发明授权
    • Utilization of a multifunctional pin to control a switched-mode power converter
    • 利用多功能引脚来控制开关式功率转换器
    • US08102679B2
    • 2012-01-24
    • US12192399
    • 2008-08-15
    • Xiaowu GongSiu Kam KokYi HeTuck Meng Chan
    • Xiaowu GongSiu Kam KokYi HeTuck Meng Chan
    • H02M3/335
    • H02M3/156H02M3/33507H02M2001/0022H02M2001/0032Y02B70/16
    • An embodiment of the invention relates to a power converter including a resistor divider with an internal node to sense an input line voltage. The internal node is operable as a multifunctional pin. A controller compares a feedback voltage dependent on a power converter output characteristic to a current-sense signal including an offset dependent on a voltage of the internal node to control entry and exit of the power converter from burst mode operation. The node may be employed to manage power converter operation by sensing or controlling its voltage to signal operation in a standby or burst mode, to sense the input line voltage, to enable an external system to signal shutdown to the power converter, and to enable the power converter to signal a delayed restart condition to the external system.
    • 本发明的实施例涉及一种功率转换器,其包括具有用于感测输入线电压的内部节点的电阻分压器。 内部节点可用作多功能引脚。 控制器将取决于功率转换器输出特性的反馈电压与包括取决于内部节点的电压的偏移的电流检测信号进行比较,以控制功率转换器的进入和退出以进行突发模式操作。 可以采用该节点来管理功率转换器的操作,通过感测或控制其电压以在备用或突发模式下信号操作,以感测输入线路电压,使外部系统能够向功率转换器发出信号关闭, 电源转换器向外部系统发出延迟重启状态信号。
    • 10. 发明授权
    • Back-to-back NPN/PNP protection diodes
    • 背对背NPN / PNP保护二极管
    • US07573103B1
    • 2009-08-11
    • US11855704
    • 2007-09-14
    • Yi HeZhizheng LiuMeng DingWei Zheng
    • Yi HeZhizheng LiuMeng DingWei Zheng
    • H01L27/06
    • H01L27/0266H01L27/0255
    • A device includes a memory device and an NPN or PNP diode coupled to a word-line of the memory device. The NPN diode includes a p-type substrate connected to ground, a well of n-type material formed in the p-type substrate in direct physical contact with the p-type substrate and electrically connected to the p-type substrate via a first metal line, a well of p-type material formed in the first well of n-type material, a first n-type region formed in the well of p-type material in direct physical contact with the well of p-type material and connected to the word line of the memory device, and a first p-type region formed in the well of n-type material in direct physical contact with the well of n-type material and electrically connected to the well of p-type material via a second metal line. The PNP diode includes a n-type substrate connected to ground, a well of p-type material formed in the n-type substrate in direct physical contact with the n-type substrate and electrically connected to the n-type substrate via a first metal line, a well of n-type material formed in the first well of p-type material, a first p-type region formed in the well of n-type material in direct physical contact with the well of n-type material and connected to the word line of the memory device, and a first n-type region formed in the well of p-type material in direct physical contact with the well of p-type material and electrically connected to the well of n-type material via a second metal line.
    • 一种设备包括存储器件和耦合到存储器件的字线的NPN或PNP二极管。 NPN二极管包括连接到地的p型衬底,在p型衬底中形成的与p型衬底直接物理接触的n型材料的阱,并通过第一金属电连接到p型衬底 线,在n型材料的第一阱中形成的p型材料的阱,形成在p型材料的阱中的第一n型区,与p型材料的阱直接物理接触并连接到 存储器件的字线和形成在n型材料的阱中的与n型材料的阱直接物理接触并且经由第二p型材料电连接到p型材料的阱的第一p型区域 金属线。 PNP二极管包括连接到地的n型衬底,形成在n型衬底中的p型材料的阱与n型衬底直接物理接触并且经由第一金属电连接到n型衬底 线,在p型材料的第一阱中形成的n型材料的阱,形成在n型材料的阱中的与n型材料的阱直接物理接触的第一p型区,并连接到 存储器件的字线和形成在p型材料的阱中的第一n型区域,其与p型材料的阱直接物理接触并且经由第二类型的n型材料电连接到n型材料的阱 金属线。