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1. 发明授权

US07402473B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07402473B2
公开(公告)日：2008-07-22
申请号：US11108827
申请日：2005-04-19
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/336 , H01L21/76
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤。通过减小半导体基板上的元件隔离槽的槽上缘周围的应力产生，从而优化元件隔离槽的形状并使器件更细，并提高器件电特性来制造器件。

2. 发明授权

US06242323B1 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06242323B1
公开(公告)日：2001-06-05
申请号：US09367524
申请日：1999-08-16
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L2176
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
摘要翻译：一种半导体器件，其具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤，通过减小半导体上的元件隔离槽的沟槽上边缘周围的应力产生而产生从而优化元件隔离槽的形状并使器件更精细并提高器件的电气特性。

3. 发明授权

US06559027B2 Semiconductor device and process for producing the sme 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06559027B2
公开(公告)日：2003-05-06
申请号：US09845338
申请日：2001-05-01
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L2176
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
摘要翻译：一种半导体器件，其具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤，通过减小半导体上的元件隔离槽的沟槽上边缘周围的应力产生而产生从而优化元件隔离槽的形状并使器件更精细并提高器件的电气特性。

4. 发明申请

US20050196935A1 Semiconductor device and process for producing the same 有权
公开(公告)号：US20050196935A1
公开(公告)日：2005-09-08
申请号：US11108827
申请日：2005-04-19
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

5. 发明授权

US06881646B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06881646B2
公开(公告)日：2005-04-19
申请号：US10392916
申请日：2003-03-21
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤。通过减小半导体衬底上的元件隔离槽的槽上边缘周围的应力产生，从而优化元件隔离槽的形状并使器件更精细并提高器件电气特性来制造器件。

6. 发明授权

US6057241A Method of manufacturing a semiconductor integrated circuit device 失效
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US6057241A
公开(公告)日：2000-05-02
申请号：US66757
申请日：1998-04-27
申请人： Yasushi Matsuda , Hideo Miura , Hirohiko Yamamoto , Masamichi Kobayashi , Shuji Ikeda , Akira Takamatsu , Norio Suzuki , Hirofumi Shimizu , Yasuko Yoshida , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Yasushi Matsuda , Hideo Miura , Hirohiko Yamamoto , Masamichi Kobayashi , Shuji Ikeda , Akira Takamatsu , Norio Suzuki , Hirofumi Shimizu , Yasuko Yoshida , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/76 , H01L21/477
CPC分类号： H01L21/477 , H01L21/76
摘要： A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp
摘要翻译：蚀刻从槽4a的侧壁露出的氧化硅膜2，使氧化硅膜2朝向有源区域反向移动。位移量被设定为等于或大于在随后的热氧化步骤中形成在凹槽4a的内壁上的氧化硅膜5的膜厚度（Tr），并且等于或小于两倍的膜厚度（Tr）。通过控制热处理时间使得氧化硅膜5的膜厚（Tr）大于膜的厚度（Tr），可以通过在1000℃以下的低温热处理使槽4a的肩部成圆形氧化硅膜2的厚度（Tp）等于或小于其厚度（Tr）的三倍（Tp

7. 发明授权

US06226079B1 Defect assessing apparatus and method, and semiconductor manufacturing method 有权
标题翻译：缺陷评估装置和方法以及半导体制造方法
公开(公告)号：US06226079B1
公开(公告)日：2001-05-01
申请号：US09161393
申请日：1998-09-29
申请人： Kazuo Takeda , Makoto Ohkura , Seiichi Isomae , Kyoko Minowa , Muneo Maeshima , Shigeru Matsui , Yasushi Matsuda , Hirofumi Shimizu
发明人： Kazuo Takeda , Makoto Ohkura , Seiichi Isomae , Kyoko Minowa , Muneo Maeshima , Shigeru Matsui , Yasushi Matsuda , Hirofumi Shimizu
IPC分类号： G01N2100
CPC分类号： G01N21/9501 , G01N21/47
摘要： A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth. A display means is provided for displaying a distribution revealing the relationship between defect size and defect depth on the basis of the value corresponding to the defect size and the value corresponding to the defect depth, both determined by the calculating means.
摘要翻译：公开了一种用于揭示缺陷的尺寸和深度之间的关系的缺陷评估装置和方法以及半导体制造方法。提供了一种检测光学系统，用于检测由照射光学系统发射的至少两种不同波长的较短波长的一个光线产生的缺陷的散射光的强度，以及来自由较长波长产生的缺陷的散射光一个是相同的提供了一种计算装置，用于根据由检测光学系统检测的来自较短波长的衍射的散射光强度和由较长波长的光导出的值，确定对应于缺陷尺寸的值和对应于缺陷的另一个值深度。提供显示装置，用于根据由计算装置确定的缺陷尺寸和对应于缺陷深度的值，显示出显示缺陷尺寸和缺陷深度之间的关系的分布。

8. 发明申请

US20140165515A1 BLENDED FILAMENT NONWOVEN FABRIC 有权
公开(公告)号：US20140165515A1
公开(公告)日：2014-06-19
申请号：US14238475
申请日：2012-08-08
申请人： Yasushi Matsuda , Junji Iwata , Mitsuru Kojima , Takafumi Ito
发明人： Yasushi Matsuda , Junji Iwata , Mitsuru Kojima , Takafumi Ito
IPC分类号： B01D39/16 , B01D46/00 , D04H1/56
CPC分类号： B01D39/163 , B01D46/0023 , B01D2239/0622 , B01D2239/064 , B01D2239/1233 , B03C3/28 , D04H1/56 , D04H3/007 , D04H3/016 , D04H3/153 , Y10T442/609
摘要： The nonwoven fabric is a blended filament nonwoven fabric including a blend of two types of filaments, wherein the two types of filaments are constituted of thermoplastic resins different from each other, an average fiber diameter obtained by dividing the total value of fiber diameters of the filaments present in the nonwoven fabric by the number of the constituent filaments is 0.1 to 10 μm, and the nonwoven fabric has a specific volume of 12 cm3/g or more; the blended filament nonwoven fabric, wherein the ratio of the number of constituent filaments having fiber diameters of 0.1 to 3 μm is 50% or more of the filaments constituting the nonwoven fabric, and the ratio of the number of constituent filaments having fiber diameters exceeding 3 μm is 50% or less of the filaments constituting the nonwoven fabric; or the nonwoven fabric is produced by a melt-blowing process.
摘要翻译：无纺布是包含两种长丝的共混物的共混长丝无纺布，其中两种长丝由彼此不同的热塑性树脂构成，通过将长丝的纤维直径的总值除以得到的平均纤维直径通过构成长丝数存在于无纺布中的比例为0.1〜10μm，非织造布的比体积为12cm 3 / g以上; 混纺长丝无纺布，其中纤维直径为0.1〜3μm的构成长丝的数量的比例为构成无纺布的长丝的50％以上，纤维直径超过3的构成长丝的数量的比例 μm为构成无纺布的长丝的50％以下; 或者通过熔喷法制造无纺布。

9. 发明申请

US20120097037A1 AIR FILTER MATERIAL USING LAMINATED ELECTRET NONWOVEN FABRIC 有权
标题翻译：空气过滤材料使用层压电极非织造布
公开(公告)号：US20120097037A1
公开(公告)日：2012-04-26
申请号：US13382266
申请日：2010-06-21
申请人： Yasushi Matsuda , Junji Iwata , Mitsuru Kojima
发明人： Yasushi Matsuda , Junji Iwata , Mitsuru Kojima
IPC分类号： B03C3/34
CPC分类号： B03C3/30 , B01D39/1623 , B01D2239/0435 , B01D2239/0622 , B01D2239/0627 , B01D2239/064 , B01D2239/065 , B01D2239/1233 , B32B5/022 , B32B5/08 , B32B5/26 , B32B2262/0253 , B32B2307/204 , B32B2307/712 , D04H1/559 , D04H3/02 , Y10S55/39
摘要： Present invention provides an air filter material using a laminated electret nonwoven fabric subjected to electret processing in which one layer or a plurality of layers of nonwoven fabrics (referred to as nonwoven fabric B) including fibers having a mean fiber diameter in the range of 10 micrometers to 100 micrometers and being larger than a mean fiber diameter of fibers constituting nonwoven fabric A are laminated on at least one side of a nonwoven fabric (referred to as nonwoven fabric A) obtained by mixing two kinds of fibers having a mean fiber diameter in the range of 0.1 micrometer to 15 micrometers and having a different melting point (fibers having a lower melting point are defined as fibers D and fibers having a higher melting point are defined as fibers E), and a laminated electret filter material having a low pressure loss and a high collection efficiency. The filter material is suitably used for a medical mask, an industrial mask, a general purpose mask or the like.
摘要翻译：本发明提供一种空气过滤材料，其使用经过驻极体处理的层压驻极体无纺布，其中一层或多层非织造织物（称为无纺织物B）包括平均纤维直径在10微米范围内的纤维在构成无纺布A的纤维的平均纤维直径大于层叠在无纺布（以下称为无纺布A）的至少一面上，所述无纺布（称为无纺布A）通过将两种平均纤维直径的纤维混合在 0.1微米至15微米的熔点（具有较低熔点的纤维被定义为纤维D，具有较高熔点的纤维被定义为纤维E），并且具有低压力损失的层压驻极体过滤材料收集效率高。过滤材料适用于医用面罩，工业面罩，通用面罩等。

10. 发明申请

US20090071948A1 LASER BEAM PROCESSING APPARATUS 失效
标题翻译：激光加工设备
公开(公告)号：US20090071948A1
公开(公告)日：2009-03-19
申请号：US12267928
申请日：2008-11-10
申请人： Yasushi Matsuda , Hidenori Shimada , Masayuki Akagi
发明人： Yasushi Matsuda , Hidenori Shimada , Masayuki Akagi
IPC分类号： B23K26/00 , H01S3/067
CPC分类号： B23K26/067 , B23K26/0673
摘要： This laser beam processing apparatus includes a fiber laser oscillator, a laser beam branching unit, a laser beam injecting unit, a fiber transmission system, a laser beam irradiating unit, and a processing table. Based on a fiber laser beam, which is oscillation-outputted from the fiber laser oscillator, the laser beam branching unit executes simultaneous multi-branching from the fiber laser beam into a plurality of branched laser beams. The laser beam injecting unit injects the branched laser beams respectively into optical fibers for transmission and the laser beam irradiating units condense and apply the branched laser beams from the optical fibers for transmission respectively to processing points.
摘要翻译：该激光束处理装置包括光纤激光振荡器，激光束分支单元，激光束注入单元，光纤传输系统，激光束照射单元和处理台。基于从光纤激光振荡器振荡输出的光纤激光束，激光束分支单元执行从光纤激光束同时多分支为多个分支激光束。激光束注入单元将分支的激光束分别注入用于透射的光纤中，并且激光束照射单元将来自光纤的分支激光束分别凝结并施加到处理点。

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