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1. 发明申请

US20120083063A1 Method for producing group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US20120083063A1
公开(公告)日：2012-04-05
申请号：US13137997
申请日：2011-09-23
申请人： Daisuke Shinoda , Shugo Nitta , Yoshiki Saito
发明人： Daisuke Shinoda , Shugo Nitta , Yoshiki Saito
IPC分类号： H01L33/32
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/12 , H01L33/20
摘要： A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a textured sapphire substrate. A buried layer is formed of Group III nitride semiconductor on the buffer layer, at a temperature lower by 20° C. to 80° C. than the temperature of 1000° C. to 1200° C. when the n-type layer is deposited on the buried layer. The texture provided on the sapphire substrate may have a depth of 1 μm to 2 μm and a side surface inclined by 40° to 80°. A preventing layer may be formed of GaN at 600° C. to 1050° C. so as to cover the entire top surface of the buffer layer.
摘要翻译：制备III族氮化物半导体发光器件的方法包括n型层，发光层和p型层，每个层由III族氮化物半导体形成，其顺序地经由纹理蓝宝石衬底上的缓冲层。当n型层沉积时，在缓冲层上，在比例为1000℃至1200℃的温度低20℃至80℃的温度下，由III族氮化物半导体形成掩埋层在埋层上。设置在蓝宝石基板上的纹理可以具有1μm至2μm的深度和倾斜40°至80°的侧面。防止层可以在600℃至1050℃由GaN形成，以覆盖缓冲层的整个顶表面。

2. 发明授权

US08685775B2 Group III nitride semiconductor light-emitting device and production method therefor 有权
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US08685775B2
公开(公告)日：2014-04-01
申请号：US13593240
申请日：2012-08-23
申请人： Atsushi Miyazaki , Koji Okuno , Shugo Nitta
发明人： Atsushi Miyazaki , Koji Okuno , Shugo Nitta
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L33/04 , H01L33/32
摘要： On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800° C. to 950° C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 Å to 100 Å is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950° C. to 1100° C.
摘要翻译：在发光层上，在800℃〜950℃的温度下形成掺有Mg的AlGaInN的pp包覆层。接着，在p包层上形成厚度为5的未掺杂GaN的覆盖层以与用于ap包层的温度相同的温度形成。接下来，在随后的工艺中温度增加到生长温度接触层。由于形成了覆盖层，并且在加热期间p包层的表面没有露出，所以抑制了Mg或杂质混合物向p包覆层的过度掺杂。可防止p包层的特性劣化。然后，在覆盖层上，在950℃〜1100℃的温度下形成p接触层。

3. 发明授权

US08765509B2 Method for producing group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US08765509B2
公开(公告)日：2014-07-01
申请号：US13137997
申请日：2011-09-23
申请人： Daisuke Shinoda , Shugo Nitta , Yoshiki Saito
发明人： Daisuke Shinoda , Shugo Nitta , Yoshiki Saito
IPC分类号： H01L33/32
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/12 , H01L33/20
摘要： A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a textured sapphire substrate. A buried layer is formed of Group III nitride semiconductor on the buffer layer, at a temperature lower by 20° C. to 80° C. than the temperature of 1000° C. to 1200° C. when the n-type layer is deposited on the buried layer. The texture provided on the sapphire substrate may have a depth of 1 μm to 2 μm and a side surface inclined by 40° to 80°. A preventing layer may be formed of GaN at 600° C. to 1050° C. so as to cover the entire top surface of the buffer layer.
摘要翻译：制备III族氮化物半导体发光器件的方法包括n型层，发光层和p型层，每个层由III族氮化物半导体形成，其顺序地经由纹理蓝宝石衬底上的缓冲层。当n型层沉积时，在缓冲层上，在比例为1000℃至1200℃的温度低20℃至80℃的温度下，由III族氮化物半导体形成掩埋层在埋层上。设置在蓝宝石基板上的纹理可以具有1μm至2μm的深度和倾斜40°至80°的侧面。防止层可以在600℃至1050℃由GaN形成，以覆盖缓冲层的整个顶表面。

4. 发明授权

US08518806B2 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device 有权
标题翻译： III族氮化物系化合物半导体的制造方法，含有III族氮化物系化合物半导体的晶片和III族氮化物系化合物半导体装置
公开(公告)号：US08518806B2
公开(公告)日：2013-08-27
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

5. 发明申请

US20130059407A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR 有权
标题翻译： III类氮化物半导体发光器件及其制造方法
公开(公告)号：US20130059407A1
公开(公告)日：2013-03-07
申请号：US13593240
申请日：2012-08-23
申请人： Atsushi Miyazaki , Koji Okuno , Shugo Nitta
发明人： Atsushi Miyazaki , Koji Okuno , Shugo Nitta
IPC分类号： H01L33/04
CPC分类号： H01L33/007 , H01L33/04 , H01L33/32
摘要： On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800° C. to 950° C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 Å to 100 Å is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950° C. to 1100° C.
摘要翻译：在发光层上，在800℃〜950℃的温度下形成掺有Mg的AlGaInN的pp包覆层。接着，在p包层上形成厚度为5的未掺杂GaN的覆盖层以与用于ap包层的温度相同的温度形成。接下来，在随后的工艺中温度增加到生长温度接触层。由于形成了覆盖层，并且在加热期间p包层的表面没有露出，所以抑制了Mg或杂质混合物向p包覆层的过度掺杂。可防止p包层的特性劣化。然后，在覆盖层上，在950℃〜1100℃的温度下形成p接触层。

6. 发明申请

US20100308437A1 METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDED-BASED COMPOUND SEMICONDUCTOR DEVICE 有权
标题翻译：用于生产III族氮化物化合物半导体的方法，包括III族氮化物化合物半导体的滤波器和基于III族氮化物的化合物半导体器件
公开(公告)号：US20100308437A1
公开(公告)日：2010-12-09
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

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