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1. 发明授权

US08945965B2 Method for producing a group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US08945965B2
公开(公告)日：2015-02-03
申请号：US13525110
申请日：2012-06-15
申请人： Naoyuki Nakada , Yasuhisa Ushida
发明人： Naoyuki Nakada , Yasuhisa Ushida
IPC分类号： H01L21/00 , H01L33/00 , H01L33/14
CPC分类号： H01L33/007 , H01L33/14
摘要： The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×1020/cm3. A plurality of regions with a nitrogen polarity is formed in the crystals with a Group III element polarity, and thus the p cladding layer has a hexagonal columnar concave and convex configuration on the surface thereof. Subsequently, a p contact layer of GaN is formed by the MOCVD method, in a film along the concave and convex configuration on the p cladding layer.
摘要翻译：本发明提供了具有改善的光提取性能的III族氮化物半导体发光器件。在制造方法中，通过MOCVD法在30kPa的压力和1.5×10 10 / cm 3的Mg浓度的发光层上形成p-AlGaN的p包层。在具有III族元素极性的晶体中形成具有氮极性的多个区域，因此p包覆层在其表面上具有六边形柱状凹凸构造。随后，通过MOCVD法在p包覆层上沿着凹凸构造的膜中形成GaN的p接触层。

2. 发明授权

US08680581B2 Method for producing group III nitride semiconductor and template substrate 有权
标题翻译：制备III族氮化物半导体和模板衬底的方法
公开(公告)号：US08680581B2
公开(公告)日：2014-03-25
申请号：US12654562
申请日：2009-12-23
申请人： Naoyuki Nakada , Koji Okuno , Yasuhisa Ushida
发明人： Naoyuki Nakada , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L29/045
摘要： The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate. The thickness of the buffer film is regulated to be smaller than that of a buffer film which is employed for epitaxially growing the Group III nitride semiconductor on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is regulated to be lower than a temperature at which the Group III nitride semiconductor is epitaxially grown on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is preferably 1,020 to 1,100° C. The buffer film employed is an AlN film having a thickness of 150 Å or less.
摘要翻译：本发明提供一种III族氮化物半导体的制造方法。该方法包括通过蚀刻在生长衬底的表面上形成凹槽; 通过溅射在生长衬底的槽形表面上形成缓冲膜; 在含有氢和氨的气氛中将衬底加热到生长所关注的III族氮化物半导体的温度; 并在生长温度下在槽的侧表面外延生长III族氮化物半导体。调节缓冲膜的厚度或生长温度，使得III族氮化物半导体主要在平行于生长衬底主表面的方向上在槽的侧表面上生长。缓冲膜的厚度被调节为小于在平面生长衬底上沿垂直于生长衬底的方向均匀地外延生长III III族氮化物半导体的缓冲膜的厚度。生长温度被调节为低于在平面生长衬底上沿垂直于生长衬底的方向均匀地外延生长III族氮化物半导体的温度。生长温度优选为1020〜1100℃。所使用的缓冲膜是厚度为150以下的AlN膜。

3. 发明申请

US20100102360A1 Method for producing group III nitride semiconductor and template substrate 有权
标题翻译：制备III族氮化物半导体和模板衬底的方法
公开(公告)号：US20100102360A1
公开(公告)日：2010-04-29
申请号：US12654562
申请日：2009-12-23
申请人： Naoyuki Nakada , Koji Okuno , Yasuhisa Ushida
发明人： Naoyuki Nakada , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L29/20 , H01L21/203 , H01L29/06
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L29/045
摘要： The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate. The thickness of the buffer film is regulated to be smaller than that of a buffer film which is employed for epitaxially growing the Group III nitride semiconductor on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is regulated to be lower than a temperature at which the Group III nitride semiconductor is epitaxially grown on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is preferably 1,020 to 1,100° C. The buffer film employed is an AlN film having a thickness of 150 Å or less.
摘要翻译：本发明提供一种III族氮化物半导体的制造方法。该方法包括通过蚀刻在生长衬底的表面上形成凹槽; 通过溅射在生长衬底的槽形表面上形成缓冲膜; 在含有氢和氨的气氛中将衬底加热到生长所关注的III族氮化物半导体的温度; 并且在生长温度下在槽的侧表面外延生长III族氮化物半导体。调节缓冲膜的厚度或生长温度，使得III族氮化物半导体主要在平行于生长衬底主表面的方向上在槽的侧表面上生长。缓冲膜的厚度被调节为小于在平面生长衬底上沿垂直于生长衬底的方向均匀地外延生长III III族氮化物半导体的缓冲膜的厚度。生长温度被调节为低于在平面生长衬底上沿垂直于生长衬底的方向均匀地外延生长III族氮化物半导体的温度。生长温度优选为1020〜1100℃。所使用的缓冲膜是厚度为150以下的AlN膜。

4. 发明授权

US08518806B2 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device 有权
标题翻译： III族氮化物系化合物半导体的制造方法，含有III族氮化物系化合物半导体的晶片和III族氮化物系化合物半导体装置
公开(公告)号：US08518806B2
公开(公告)日：2013-08-27
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

5. 发明申请

US20100308437A1 METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDED-BASED COMPOUND SEMICONDUCTOR DEVICE 有权
标题翻译：用于生产III族氮化物化合物半导体的方法，包括III族氮化物化合物半导体的滤波器和基于III族氮化物的化合物半导体器件
公开(公告)号：US20100308437A1
公开(公告)日：2010-12-09
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

6. 发明授权

US09420769B2 Chimeric non-human animal carrying human hepatocyte 有权
标题翻译：携带人肝细胞的嵌合非人动物
公开(公告)号：US09420769B2
公开(公告)日：2016-08-23
申请号：US14351481
申请日：2012-10-12
申请人： Mitsuo Oshimura , Yasuhiro Kazuki , Chise Mukaidani , Takashi Shimada , Masakazu Kakuni , Satoko Hamamura , Hidetaka Kamimura , Akio Kawamura , Naoyuki Nakada , Masato Ohbuchi , Kota Kato
发明人： Mitsuo Oshimura , Yasuhiro Kazuki , Chise Mukaidani , Takashi Shimada , Masakazu Kakuni , Satoko Hamamura , Hidetaka Kamimura , Akio Kawamura , Naoyuki Nakada , Masato Ohbuchi , Kota Kato
IPC分类号： A01K67/027 , C12N9/02 , G01N33/50
CPC分类号： A01K67/0271 , A01K2207/12 , A01K2217/075 , A01K2227/105 , A01K2267/03 , C12N9/0042 , G01N33/5067 , G01N33/5088
摘要： A chimeric non-human animal having an in vivo human hepatocyte population, wherein the effects of non-human animal cells on drug metabolism are suppressed or deleted is provided. A method for producing a chimeric non-human animal that lacks a drug-metabolizing system or has a suppressed drug-metabolizing system and is provided with a drug-metabolizing system driven by human hepatocytes, is provided. The method comprises transplanting human hepatocytes into a non-human animal characterized by (i) being immunodeficient, (ii) having liver damage, and (iii) lacking the functions of an endogenous Cyp3a gene.
摘要翻译：提供具有体内人肝细胞群体的嵌合非人动物，其中非人动物细胞对药物代谢的作用被抑制或缺失。提供了一种制备缺乏药物代谢系统或具有抑制药物代谢系统并具有由人肝细胞驱动的药物代谢系统的嵌合非人动物的方法。该方法包括将人肝细胞移植到非人动物中，其特征在于：（i）免疫缺陷，（ii）具有肝损伤，和（iii）缺乏内源性Cyp3a基因的功能。

7. 发明申请

US20140241991A1 CHIMERIC NON-HUMAN ANIMAL CARRYING HUMAN HEPATOCYTE 有权
标题翻译：动物非人类动物携带人类肝脏
公开(公告)号：US20140241991A1
公开(公告)日：2014-08-28
申请号：US14351481
申请日：2012-10-12
申请人： Mitsuo Oshimura , Yasuhiro Kazuki , Chise Mukaidani , Takashi Shimada , Masakazu Kakuni , Satoko Hamamura , Hidetaka Kamimura , Akio Kawamura , Naoyuki Nakada , Masato Ohbuchi , Kota Kato
发明人： Mitsuo Oshimura , Yasuhiro Kazuki , Chise Mukaidani , Takashi Shimada , Masakazu Kakuni , Satoko Hamamura , Hidetaka Kamimura , Akio Kawamura , Naoyuki Nakada , Masato Ohbuchi , Kota Kato
IPC分类号： A01K67/027
CPC分类号： A01K67/0271 , A01K2207/12 , A01K2217/075 , A01K2227/105 , A01K2267/03 , C12N9/0042 , G01N33/5067 , G01N33/5088
摘要： A chimeric non-human animal having an in vivo human hepatocyte population, wherein the effects of non-human animal cells on drug metabolism are suppressed or deleted is provided. A method for producing a chimeric non-human animal that lacks a drug-metabolizing system or has a suppressed drug-metabolizing system and is provided with a drug-metabolizing system driven by human hepatocytes, is provided. The method comprises transplanting human hepatocytes into a non-human animal characterized by (i) being immunodeficient, (ii) having liver damage, and (iii) lacking the functions of an endogenous Cyp3a gene.
摘要翻译：提供具有体内人肝细胞群体的嵌合非人动物，其中非人动物细胞对药物代谢的作用被抑制或缺失。提供了一种制备缺乏药物代谢系统或具有抑制药物代谢系统并具有由人肝细胞驱动的药物代谢系统的嵌合非人动物的方法。该方法包括将人肝细胞移植到非人动物中，其特征在于：（i）免疫缺陷，（ii）具有肝损伤，和（iii）缺乏内源性Cyp3a基因的功能。

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