专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08722537B2 Multi-sacrificial layer and method 有权
标题翻译：多牺牲层和方法
公开(公告)号：US08722537B2
公开(公告)日：2014-05-13
申请号：US12686878
申请日：2010-01-13
申请人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
发明人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
IPC分类号： H01L21/44
CPC分类号： H01G7/06 , B81B2201/0221 , B81C1/0015 , B81C2201/0109 , H01G7/00 , H01L28/60
摘要： MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.
摘要翻译：提供了用于利用牺牲层的MEMS器件和方法。一个实施例包括在衬底上形成第一牺牲层和第二牺牲层，其中第二牺牲层用作粘附层。一旦形成，第一牺牲层和第二牺牲层被图案化，使得第二牺牲层被底切以在第一牺牲层和第二牺牲层之间形成台阶。在第二牺牲层上形成顶部电容器电极，并且去除第一牺牲层和第二牺牲层以便释放顶部电容器电极。

2. 发明申请

US20100240215A1 Multi-Sacrificial Layer and Method 有权
标题翻译：多牺牲层和方法
公开(公告)号：US20100240215A1
公开(公告)日：2010-09-23
申请号：US12686878
申请日：2010-01-13
申请人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
发明人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
IPC分类号： H01L21/28 , B05D1/32 , B05D5/12 , B05D3/14 , H01G9/00
CPC分类号： H01G7/06 , B81B2201/0221 , B81C1/0015 , B81C2201/0109 , H01G7/00 , H01L28/60
摘要： MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.
摘要翻译：提供了用于利用牺牲层的MEMS器件和方法。一个实施例包括在衬底上形成第一牺牲层和第二牺牲层，其中第二牺牲层用作粘附层。一旦形成，第一牺牲层和第二牺牲层被图案化，使得第二牺牲层被底切以在第一牺牲层和第二牺牲层之间形成台阶。在第二牺牲层上形成顶部电容器电极，并且去除第一牺牲层和第二牺牲层以便释放顶部电容器电极。

3. 发明授权

US08410665B2 MEMS kinetic energy conversion 有权
标题翻译： MEMS动能转换
公开(公告)号：US08410665B2
公开(公告)日：2013-04-02
申请号：US12977304
申请日：2010-12-23
申请人： Tien-Kan Chung , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
发明人： Tien-Kan Chung , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
IPC分类号： H01L41/08
CPC分类号： H01L41/311 , B81B3/0021 , B81C1/00 , H01L41/113 , H01L41/1136 , H01L41/1138 , H01L41/22 , H01L41/312 , H02K35/04 , H02N2/186 , Y10T29/42 , Y10T29/49005 , Y10T29/49073 , Y10T29/49075 , Y10T29/49146
摘要： The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.
摘要翻译：本公开提供了微型装置。该装置具有微电子机械系统（MEMS）可移动结构，MEMS可移动结构上的多个金属环以及MEMS可移动结构上方的压电元件。前侧和后侧封盖晶片被结合到MEMS结构，前侧和后侧封盖晶片封装MEMS可移动结构，多个金属环和压电元件。该装置还包括设置在多个金属环上的前侧封盖晶片上的磁体。

4. 发明申请

US20120161582A1 MEMS KINETIC ENERGY CONVERSION 有权
标题翻译： MEMS动力转换
公开(公告)号：US20120161582A1
公开(公告)日：2012-06-28
申请号：US12977304
申请日：2010-12-23
申请人： TIEN-KAN CHUNG , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
发明人： TIEN-KAN CHUNG , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
IPC分类号： H02N2/18 , H01L41/22 , F03G7/08
CPC分类号： H01L41/311 , B81B3/0021 , B81C1/00 , H01L41/113 , H01L41/1136 , H01L41/1138 , H01L41/22 , H01L41/312 , H02K35/04 , H02N2/186 , Y10T29/42 , Y10T29/49005 , Y10T29/49073 , Y10T29/49075 , Y10T29/49146
摘要： The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.
摘要翻译：本公开提供了微型装置。该装置具有微电子机械系统（MEMS）可移动结构，MEMS可移动结构上的多个金属环以及MEMS可移动结构上方的压电元件。前侧和后侧封盖晶片被结合到MEMS结构，前侧和后侧封盖晶片封装MEMS可移动结构，多个金属环和压电元件。该装置还包括设置在多个金属环上的前侧封盖晶片上的磁体。

5. 发明授权

US09459234B2 CMOS compatible BioFET 有权
标题翻译： CMOS兼容的BioFET
公开(公告)号：US09459234B2
公开(公告)日：2016-10-04
申请号：US13480161
申请日：2012-05-24
申请人： Alexander Kalnitsky , Yi-Shao Liu , Kai-Chih Liang , Chia-Hua Chu , Chun-Ren Cheng , Chun-Wen Cheng
发明人： Alexander Kalnitsky , Yi-Shao Liu , Kai-Chih Liang , Chia-Hua Chu , Chun-Ren Cheng , Chun-Wen Cheng
IPC分类号： H01L51/05 , G01N27/414 , H01L51/00
CPC分类号： G01N27/4145 , G01N27/414 , G01N27/4148 , H01L21/84 , H01L27/1203 , H01L51/0093
摘要： The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
摘要翻译：本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件可以包括衬底; 设置在基板的第一表面上的栅极结构和形成在基板的第二表面上的界面层。界面层可以允许将受体置于界面层上以检测生物分子或生物实体的存在。

6. 发明申请

US20140287548A1 MEMS Device with Release Aperture 有权
标题翻译：具有释放孔径的MEMS器件
公开(公告)号：US20140287548A1
公开(公告)日：2014-09-25
申请号：US14225733
申请日：2014-03-26
申请人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
发明人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
IPC分类号： B81C1/00
CPC分类号： B81B7/0058 , B81C1/00333 , B81C1/0038 , B81C2203/0136 , B81C2203/0145 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.
摘要翻译：本公开提供了一种制造微机电系统（MEMS）装置的方法。在一个实施例中，一种方法包括提供包括第一牺牲层的衬底，在第一牺牲层之上形成微电子机械系统（MEMS）结构，以及在第一牺牲层之上的基本上相同的水平面上形成释放孔， MEMS结构。该方法还包括在MEMS结构之上和释放孔内形成第二牺牲层，以及在第二牺牲层和MEMS结构之上形成第一帽，其中第一帽的腿设置在MEMS结构和释放之间光圈。该方法还包括去除第一牺牲层，通过释放孔去除第二牺牲层并堵塞释放孔。还提供了通过这种方法形成的MEMS器件。

7. 发明授权

US08723123B2 Light detector with Ge film 有权
标题翻译：光电探测器与Ge膜
公开(公告)号：US08723123B2
公开(公告)日：2014-05-13
申请号：US13595743
申请日：2012-08-27
申请人： Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
发明人： Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
IPC分类号： G01J5/20
CPC分类号： G01J1/1626 , G01J1/4204 , G01J3/465 , H01L31/02164 , H01L31/103 , H01L31/105
摘要： A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.
摘要翻译：光检测器包括第一光传感器和用于检测入射光的第二光传感器。将Ge膜设置在第一光传感器上以通过红外（IR）波长的光并阻挡可见波长的光。 Ge膜不覆盖第二个光传感器。

8. 发明授权

US08648468B2 Hermetic wafer level packaging 有权
标题翻译：密封晶圆级包装
公开(公告)号：US08648468B2
公开(公告)日：2014-02-11
申请号：US12846504
申请日：2010-07-29
申请人： Richard Chu , Martin Liu , Chia-Hua Chu , Yuan-Chih Hsieh , Chung-Hsien Lin , Lan-Lin Chao , Chun-Wen Cheng , Mingo Liu
发明人： Richard Chu , Martin Liu , Chia-Hua Chu , Yuan-Chih Hsieh , Chung-Hsien Lin , Lan-Lin Chao , Chun-Wen Cheng , Mingo Liu
IPC分类号： H01L23/48
CPC分类号： H01L24/94 , B81B2207/015 , B81C1/00269 , B81C2203/0109 , B81C2203/0771 , H01L23/481 , H01L25/50 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/1306 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum -based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers.
摘要翻译：提供晶圆级封装。该封装包括具有晶体管器件的第一半导体晶片和包括第一材料的第一结合层。所述封装包括具有第二接合层的第二半导体晶片，所述第二接合层包括不同于所述第一材料的第二材料，所述第一和第二材料中的一个为铝基，另一个为钛基。其中第二晶片的一部分通过第一和第二接合层扩散地结合到第一晶片。

9. 发明申请

US20120074590A1 MULTIPLE BONDING IN WAFER LEVEL PACKAGING 有权
标题翻译：多级捆绑在水平包装中
公开(公告)号：US20120074590A1
公开(公告)日：2012-03-29
申请号：US12892003
申请日：2010-09-28
申请人： Chung-Hsien Lin , Chia-Hua Chu , Li-Cheng Chu , Yuan-Chih Hsieh , Chun-Wen Cheng
发明人： Chung-Hsien Lin , Chia-Hua Chu , Li-Cheng Chu , Yuan-Chih Hsieh , Chun-Wen Cheng
IPC分类号： H01L23/488 , H01L21/768
CPC分类号： B81B7/0032 , B81B2207/092 , B81C1/00269 , B81C1/00357 , B81C2203/0109 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method for fabricating a MEMS device including multiple bonding of substrates. In an embodiment, a method includes providing a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, providing a semiconductor substrate including a second bonding layer, and providing a cap including a third bonding layer. The method further includes bonding the MEMS substrate to the semiconductor substrate at the first and second bonding layers, and bonding the cap to the semiconductor substrate at the second and third bonding layers to hermetically seal the MEMS substrate between the cap and the semiconductor substrate. A MEMS device fabricated by the above method is also provided.
摘要翻译：本公开提供了一种用于制造包括多个基板结合的MEMS装置的方法。在一个实施例中，一种方法包括提供包括第一结合层的微电子机械系统（MEMS）衬底，提供包括第二接合层的半导体衬底，以及提供包括第三接合层的帽。该方法还包括在第一和第二接合层处将MEMS衬底接合到半导体衬底，并且在第二和第三接合层处将盖接合到半导体衬底上，以密封MEMS衬底在盖和半导体衬底之间。还提供了通过上述方法制造的MEMS器件。

10. 发明申请

US20120043626A1 MICROSTRUCTURE DEVICE WITH AN IMPROVED ANCHOR 有权
标题翻译：具有改进锚杆的微结构装置
公开(公告)号：US20120043626A1
公开(公告)日：2012-02-23
申请号：US12858202
申请日：2010-08-17
申请人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
发明人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： H01L29/84 , B81B2203/0109 , B81B2203/0118 , B81B2203/0307 , B81C1/00571
摘要： The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.
摘要翻译：本公开提供了一种制造具有改进的锚的微结构装置的系统。利用改进的锚固件制造微结构器件的方法包括提供衬底并在衬底上形成氧化物层。然后，在氧化物层中蚀刻空腔，使得空腔包括在氧化物层中的侧壁。然后将微结构器件层与空腔上的氧化物层结合。形成微结构器件，在器件层中蚀刻沟槽以限定微结构器件的外边界。在一个实施例中，外部边界基本上在空腔的侧壁的外侧。然后，通过器件层中的沟槽蚀刻空腔的侧壁，从而将微结构器件悬浮在空腔上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式