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1. 发明授权

US08722537B2 Multi-sacrificial layer and method 有权
标题翻译：多牺牲层和方法
公开(公告)号：US08722537B2
公开(公告)日：2014-05-13
申请号：US12686878
申请日：2010-01-13
申请人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
发明人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
IPC分类号： H01L21/44
CPC分类号： H01G7/06 , B81B2201/0221 , B81C1/0015 , B81C2201/0109 , H01G7/00 , H01L28/60
摘要： MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.
摘要翻译：提供了用于利用牺牲层的MEMS器件和方法。一个实施例包括在衬底上形成第一牺牲层和第二牺牲层，其中第二牺牲层用作粘附层。一旦形成，第一牺牲层和第二牺牲层被图案化，使得第二牺牲层被底切以在第一牺牲层和第二牺牲层之间形成台阶。在第二牺牲层上形成顶部电容器电极，并且去除第一牺牲层和第二牺牲层以便释放顶部电容器电极。

2. 发明申请

US20100240215A1 Multi-Sacrificial Layer and Method 有权
标题翻译：多牺牲层和方法
公开(公告)号：US20100240215A1
公开(公告)日：2010-09-23
申请号：US12686878
申请日：2010-01-13
申请人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
发明人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
IPC分类号： H01L21/28 , B05D1/32 , B05D5/12 , B05D3/14 , H01G9/00
CPC分类号： H01G7/06 , B81B2201/0221 , B81C1/0015 , B81C2201/0109 , H01G7/00 , H01L28/60
摘要： MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.
摘要翻译：提供了用于利用牺牲层的MEMS器件和方法。一个实施例包括在衬底上形成第一牺牲层和第二牺牲层，其中第二牺牲层用作粘附层。一旦形成，第一牺牲层和第二牺牲层被图案化，使得第二牺牲层被底切以在第一牺牲层和第二牺牲层之间形成台阶。在第二牺牲层上形成顶部电容器电极，并且去除第一牺牲层和第二牺牲层以便释放顶部电容器电极。

3. 发明授权

US08343789B2 Microstructure device with an improved anchor 有权
标题翻译：具有改进锚的微结构装置
公开(公告)号：US08343789B2
公开(公告)日：2013-01-01
申请号：US12858202
申请日：2010-08-17
申请人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
发明人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
IPC分类号： H01L21/02
CPC分类号： H01L29/84 , B81B2203/0109 , B81B2203/0118 , B81B2203/0307 , B81C1/00571
摘要： The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.
摘要翻译：本公开提供了一种制造具有改进的锚的微结构装置的系统。利用改进的锚固件制造微结构器件的方法包括提供衬底并在衬底上形成氧化物层。然后，在氧化物层中蚀刻空腔，使得空腔包括在氧化物层中的侧壁。然后将微结构器件层与空腔上的氧化物层结合。形成微结构器件，在器件层中蚀刻沟槽以限定微结构器件的外边界。在一个实施例中，外部边界基本上在空腔的侧壁的外侧。然后，通过器件层中的沟槽蚀刻空腔的侧壁，从而将微结构器件悬浮在空腔上。

4. 发明授权

US08330559B2 Wafer level packaging 有权
标题翻译：晶圆级包装
公开(公告)号：US08330559B2
公开(公告)日：2012-12-11
申请号：US12879216
申请日：2010-09-10
申请人： Chun-Wen Cheng , Chung-Hsien Lin , Chia-Hua Chu
发明人： Chun-Wen Cheng , Chung-Hsien Lin , Chia-Hua Chu
IPC分类号： H03H9/00
CPC分类号： B81B7/0032 , B81C1/00269 , B81C1/00333
摘要： A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer.
摘要翻译：晶片级封装的方法包括提供包括掩埋氧化物层和顶部氧化物层的衬底，以及蚀刻衬底以在掩埋氧化物层之上形成开口和在开口之间的微电子机械系统（MEMS）谐振器元件，封装在掩埋氧化物层内的MEMS谐振器元件，顶部氧化物层和侧壁氧化物层。该方法还包括用多晶硅填充开口以形成邻近MEMS谐振器元件的多晶硅电极，去除与MEMS谐振器元件相邻的顶部氧化物层和侧壁氧化物层，将多晶硅电极连接到互补金属氧化物半导体（CMOS ）晶片或载体晶片，去除邻近MEMS谐振器元件的掩埋氧化物层，以及将衬底接合到封盖晶片，以密封封装晶片和CMOS晶片或载体晶片之一中的MEMS谐振器元件。

5. 发明申请

US20120125747A1 MEMS SWITCH WITH REDUCED DIELECTRIC CHARGING EFFECT 有权
标题翻译：具有降低电介质充电效应的MEMS开关
公开(公告)号：US20120125747A1
公开(公告)日：2012-05-24
申请号：US12951492
申请日：2010-11-22
申请人： Chia-Hua Chu , Chung-Hsien Lin , Chun-Wen Cheng
发明人： Chia-Hua Chu , Chung-Hsien Lin , Chun-Wen Cheng
IPC分类号： H01H57/00 , H01H11/00
CPC分类号： H01H11/00 , H01G5/18 , H01H49/00 , H01H59/0009 , H01H2001/0084 , H01P1/127 , Y10T29/49105
摘要： The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.
摘要翻译：本公开在一个实施例中提供了一种半导体器件，其包括具有衬底的MEMS开关，设置在衬底上方的第一电介质层，以及设置在第一电介质层上方的底部信号电极，凸块和底部致动电极。 MEMS开关还包括封装底部信号电极的第二电介质层和包括设置在底部信号电极上方的顶部信号电极的可移动部件和设置在底部致动电极和凸起上方的顶部致动电极，其中顶部致动电极电连接到凸块。还公开了一种制造MEMS开关的方法。

6. 发明申请

US20120068276A1 MICROSTRUCTURE WITH AN ENHANCED ANCHOR 有权
标题翻译：具有增强锚的微结构
公开(公告)号：US20120068276A1
公开(公告)日：2012-03-22
申请号：US12887320
申请日：2010-09-21
申请人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
发明人： Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81C1/00571 , B81B2203/0109 , B81B2203/0307 , B81C1/00063
摘要： The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of a microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on the handle layer, and a silicon device layer formed on the buried oxide layer. A top oxide layer is formed on the device layer. The top oxide layer, the device layer, and the buried oxide layer are etched, thereby forming trenches to create an anchor and a microstructure device in the device layer. In process of fabricating the device, a thermal oxide layer is formed along sides of the microstructure device to enclose the microstructure device in the buried oxide layer, the top oxide layer and the thermal oxide layer. Then, a poly layer if formed to fill in the trenches and enclose the anchor. After the poly layer fills in the trenches, the oxide layers enclosing the microstructure device are etched away, releasing the microstructure device.
摘要翻译：本公开提供了具有增强的锚和窄气隙的微结构装置。本文提供的微结构器件的一个实施例包括分层晶片。层状晶片包括硅手柄层，形成在手柄层上的掩埋氧化物层和形成在掩埋氧化物层上的硅器件层。在器件层上形成顶部氧化物层。蚀刻顶部氧化物层，器件层和掩埋氧化物层，从而形成沟槽，以在器件层中形成锚和微结构器件。在制造该器件的过程中，沿着微结构器件的侧面形成热氧化物层，以将微结构器件封装在掩埋氧化物层，顶部氧化物层和热氧化物层中。然后，如果形成多层以填充沟槽并包围锚。在多层填充沟槽之后，将包围微结构器件的氧化物层蚀刻掉，释放微结构器件。

7. 发明授权

US08797127B2 MEMS switch with reduced dielectric charging effect 有权
标题翻译：具有降低介电充电效应的MEMS开关
公开(公告)号：US08797127B2
公开(公告)日：2014-08-05
申请号：US12951492
申请日：2010-11-22
申请人： Chia-Hua Chu , Chung-Hsien Lin , Chun-Wen Cheng
发明人： Chia-Hua Chu , Chung-Hsien Lin , Chun-Wen Cheng
IPC分类号： H01H51/22
CPC分类号： H01H11/00 , H01G5/18 , H01H49/00 , H01H59/0009 , H01H2001/0084 , H01P1/127 , Y10T29/49105
摘要： The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.
摘要翻译：本公开在一个实施例中提供了一种半导体器件，其包括具有衬底的MEMS开关，设置在衬底上方的第一电介质层，以及设置在第一电介质层上方的底部信号电极，凸块和底部致动电极。 MEMS开关还包括封装底部信号电极的第二电介质层和包括设置在底部信号电极上方的顶部信号电极的可移动部件和设置在底部致动电极和凸起上方的顶部致动电极，其中顶部致动电极电连接到凸块。还公开了一种制造MEMS开关的方法。

8. 发明授权

US08729646B2 MEMS devices and methods for forming the same 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US08729646B2
公开(公告)日：2014-05-20
申请号：US13571258
申请日：2012-08-09
申请人： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
发明人： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
IPC分类号： H01L29/84
CPC分类号： B81B3/0059 , B81B2201/0235 , B81B2201/0257 , B81B2203/0315 , B81B2207/012 , B81C2203/0118 , G01P15/0802 , G01P15/125 , H04R2201/003
摘要： A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.
摘要翻译：一种器件包括其中具有MEMS器件的微机电系统（MEMS）晶片。 MEMS器件包括可移动元件和MEMS晶片中的第一开口。可移动元件设置在第一开口中。载体晶片结合到MEMS晶片。载体晶片包括连接到第一开口的第二开口，其中第二开口包括从载体晶片的表面延伸到载体晶片中的入口部分和比入口部分更宽的内部部分，其中内部部分更深在载体晶片中比入口部分。

9. 发明申请

US20140054461A1 LIGHT DETECTOR WITH GE FILM 有权
标题翻译：光电探测器
公开(公告)号：US20140054461A1
公开(公告)日：2014-02-27
申请号：US13595743
申请日：2012-08-27
申请人： Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
发明人： Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
IPC分类号： G01J1/44 , G01J5/20 , H01L31/18 , G01J5/00
CPC分类号： G01J1/1626 , G01J1/4204 , G01J3/465 , H01L31/02164 , H01L31/103 , H01L31/105
摘要： A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.
摘要翻译：光检测器包括第一光传感器和用于检测入射光的第二光传感器。将Ge膜设置在第一光传感器上以通过红外（IR）波长的光并阻挡可见波长的光。 Ge膜不覆盖第二个光传感器。

10. 发明申请

US20140042562A1 MEMS Devices and Methods for Forming the Same 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US20140042562A1
公开(公告)日：2014-02-13
申请号：US13571258
申请日：2012-08-09
申请人： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
发明人： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
IPC分类号： H01L21/306 , H01L29/84
CPC分类号： B81B3/0059 , B81B2201/0235 , B81B2201/0257 , B81B2203/0315 , B81B2207/012 , B81C2203/0118 , G01P15/0802 , G01P15/125 , H04R2201/003
摘要： A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.
摘要翻译：一种器件包括其中具有MEMS器件的微机电系统（MEMS）晶片。 MEMS器件包括可移动元件和MEMS晶片中的第一开口。可移动元件设置在第一开口中。载体晶片结合到MEMS晶片。载体晶片包括连接到第一开口的第二开口，其中第二开口包括从载体晶片的表面延伸到载体晶片中的入口部分和比入口部分更宽的内部部分，其中内部部分更深在载体晶片中比入口部分。

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