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1. 发明申请

US20130280891A1 METHOD AND APPARATUS FOR GERMANIUM TIN ALLOY FORMATION BY THERMAL CVD 审中-公开
标题翻译：用于通过热CVD形成的锗合金合金的方法和装置
公开(公告)号：US20130280891A1
公开(公告)日：2013-10-24
申请号：US13784109
申请日：2013-03-29
申请人： YIHWAN KIM , Yi-Chiau Huang , Errol Antonio C. Sanchez
发明人： YIHWAN KIM , Yi-Chiau Huang , Errol Antonio C. Sanchez
IPC分类号： H01L21/02
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/06 , C30B29/08 , C30B29/52 , H01L21/02524 , H01L21/02532 , H01L21/02535
摘要： A method and apparatus for forming semiconductive semiconductor-metal alloy layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy, optionally including silicon, is formed on the substrate. The metal precursor is typically a metal halide, which may be provided by evaporating a liquid metal halide, subliming a solid metal halide, or by contacting a pure metal with a halogen gas. A group IV halide deposition control agent is used to provide selective deposition on semiconductive regions of the substrate relative to dielectric regions. The semiconductive semiconductor-metal alloy layers may be doped, for example with boron, phosphorus, and/or arsenic. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.
摘要翻译：描述了用于形成半导体半导体 - 金属合金层的方法和装置。将锗前体和金属前体提供到室，并且在衬底上形成任选地包含硅的锗 - 金属合金外延层。金属前体通常是金属卤化物，其可以通过蒸发液体金属卤化物，升华固体金属卤化物或通过使纯金属与卤素气体接触来提供。使用IV族卤化物沉积控制剂来相对于电介质区域在衬底的半导体区域上提供选择性沉积。半导体半导体 - 金属合金层可以掺杂例如硼，磷和/或砷。前体可以通过喷头或通过侧入口提供，并且耦合到室的排气系统可以被单独加热以管理排气部件的冷凝。

2. 发明申请

US20110209660A1 METHODS AND APPARATUS FOR DEPOSITION PROCESSES 有权
标题翻译：沉积过程的方法和装置
公开(公告)号：US20110209660A1
公开(公告)日：2011-09-01
申请号：US13028842
申请日：2011-02-16
申请人： NYI O. MYO , KEVIN BAUTISTA , ZHIYUAN YE , SCHUBERT S. CHU , YIHWAN KIM
发明人： NYI O. MYO , KEVIN BAUTISTA , ZHIYUAN YE , SCHUBERT S. CHU , YIHWAN KIM
IPC分类号： C30B25/04 , C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： C30B25/12 , C23C16/4586 , H01L21/68735 , H01L21/68742
摘要： Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.
摘要翻译：本文提供了沉积工艺的方法和设备。在一些实施例中，设备可以包括基底支撑件，其包括基座板，所述基座板具有设置在所述基座板的上表面中的口袋，并且具有形成在所述上表面中并围绕所述口袋的唇缘，所述唇缘构造成将基底唇; 以及多个通气孔，当基底设置在唇缘上时，从口袋延伸到基座板的上表面以排出被捕获在基底的背面和口袋之间的气体。还公开了利用本发明的用于在衬底上沉积层的方法。

3. 发明申请

US20080132018A1 FORMATION AND TREATMENT OF EPITAXIAL LAYER CONTAINING SILICON AND CARBON 有权
标题翻译：含有硅和碳的外延层的形成和处理
公开(公告)号：US20080132018A1
公开(公告)日：2008-06-05
申请号：US11566031
申请日：2006-12-01
申请人： YIHWAN KIM , Arkadii V. Samoilov
发明人： YIHWAN KIM , Arkadii V. Samoilov
IPC分类号： H01L21/336 , C23C16/00
CPC分类号： C23C16/24 , C23C16/56 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10T117/1004
摘要： Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, and spike annealing in a environment containing nitrogen.
摘要翻译：公开了用于形成和处理含有硅和碳的外延层的方法和装置。外延层的处理将间隙碳转化为替代碳。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施方案中，外延层的处理包括在短时间内进行退火，例如通过激光退火，毫秒退火，快速热退火和含氮环境的尖峰退火。

4. 发明申请

US20070256627A1 METHOD OF ULTRA-SHALLOW JUNCTION FORMATION USING SI FILM ALLOYED WITH CARBON 有权
标题翻译：使用与碳合金制成的超薄结块形成方法
公开(公告)号：US20070256627A1
公开(公告)日：2007-11-08
申请号：US11742932
申请日：2007-05-01
申请人： YIHWAN KIM , Majeed Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
发明人： YIHWAN KIM , Majeed Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
IPC分类号： C30B23/00 , C23C16/00 , B05D3/02 , C30B25/00
CPC分类号： H01L29/7848 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2233 , H01L21/26513 , H01L29/165 , H01L29/66287 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
摘要翻译：提供了一种在基板上形成超浅结的方法。在某些实施例中，提供了在衬底上形成超浅结的方法。将基底放置在处理室中。硅基层沉积在基底上。硅碳层暴露于掺杂剂。将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

5. 发明申请

US20110124169A1 METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER 有权
标题翻译：选择沉积外延层的方法
公开(公告)号：US20110124169A1
公开(公告)日：2011-05-26
申请号：US12849387
申请日：2010-08-03
申请人： ZHIYUAN YE , SAURABH CHOPRA , YIHWAN KIM
发明人： ZHIYUAN YE , SAURABH CHOPRA , YIHWAN KIM
IPC分类号： H01L21/336 , H01L21/20 , H01L21/306
CPC分类号： H01L21/02532 , C23C16/325 , C23C16/56 , C30B25/04 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/02381 , H01L21/02538 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L21/3065 , Y10S438/929
摘要： Methods for selectively depositing an epitaxial layer are provided herein. In some embodiments, providing a substrate having a monocrystalline first surface and a non-monocrystalline second surface; exposing the substrate to a deposition gas to deposit a layer on the first and second surfaces, the layer comprising a first portion deposited on the first surfaces and a second portion deposited on the second surfaces; and exposing the substrate to an etching gas comprising a first gas comprising hydrogen and a halogen and a second gas comprising at least one of a Group III, IV, or V element to selectively etch the first portion of the layer at a slower rate than the second portion of the layer. In some embodiments, the etching gas comprises hydrogen chloride (HCl) and germane (GeH4).
摘要翻译：本文提供了选择性沉积外延层的方法。在一些实施方案中，提供具有单晶第一表面和非单晶第二表面的基材; 将衬底暴露于沉积气体以在第一和第二表面上沉积层，该层包括沉积在第一表面上的第一部分和沉积在第二表面上的第二部分; 以及将所述衬底暴露于包括包含氢和卤素的第一气体和包含III，IV或V族元素中的至少一种的第二气体的蚀刻气体，以选择性地蚀刻所述层的所述第一部分，第二部分的层。在一些实施方案中，蚀刻气体包括氯化氢（HCl）和锗烷（GeH 4）。

6. 发明申请

US20120273052A1 METHOD AND APPARATUS FOR GAS DELIVERY 有权
公开(公告)号：US20120273052A1
公开(公告)日：2012-11-01
申请号：US13097831
申请日：2011-04-29
申请人： ZHIYUAN YE , YIHWAN KIM
发明人： ZHIYUAN YE , YIHWAN KIM
IPC分类号： F16K25/00
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

7. 发明申请

US20100255661A1 METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION 有权
标题翻译：用于沉积具有减少的界面污染的层的方法
公开(公告)号：US20100255661A1
公开(公告)日：2010-10-07
申请号：US12717266
申请日：2010-03-04
申请人： JEAN R. VATUS , JINSONG TANG , YIHWAN KIM , SATHEESH KUPPURAO , ERROL SANCHEZ
发明人： JEAN R. VATUS , JINSONG TANG , YIHWAN KIM , SATHEESH KUPPURAO , ERROL SANCHEZ
IPC分类号： H01L21/20
CPC分类号： H01L21/02538 , C23C16/0245 , C23C16/24 , H01L21/02381 , H01L21/02532 , H01L21/02661
摘要： Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.
摘要翻译：本文公开了沉积具有减小的界面污染的层的方法。本发明的方法可以有利地减少沉积层之间的界面处的污染，例如沉积层和下面的基底或膜之间的污染。在一些实施例中，沉积层的方法可以包括在还原气氛中退火其上设置有第一层的含硅层; 使用蚀刻工艺除去第一层，以在退火后露出含硅层; 以及在暴露的含硅层上沉积第二层。

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