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1. 发明授权

US09200367B2 Method and apparatus for gas delivery 有权
公开(公告)号：US09200367B2
公开(公告)日：2015-12-01
申请号：US13191008
申请日：2011-07-26
申请人： Zhiyuan Ye , Yihwan Kim
发明人： Zhiyuan Ye , Yihwan Kim
IPC分类号： C23C16/455 , C23C16/448
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

2. 发明申请

US20130256760A1 METHOD FOR FORMING GROUP III/V CONFORMAL LAYERS ON SILICON SUBSTRATES 有权
标题翻译：在硅基体上形成III / V族一体层的方法
公开(公告)号：US20130256760A1
公开(公告)日：2013-10-03
申请号：US13436644
申请日：2012-03-30
申请人： Xinyu Bao , Errol Antonio C. Sanchez , David K. Carlson , Zhiyuan Ye
发明人： Xinyu Bao , Errol Antonio C. Sanchez , David K. Carlson , Zhiyuan Ye
IPC分类号： H01L29/267 , H01L21/20
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02455 , H01L21/02538 , H01L21/0262 , H01L21/02694 , H01L29/267 , Y10T117/1008
摘要： A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.
摘要翻译：一种在硅衬底上形成保形III / V层的方法，其上形成有III / V层的所得衬底。该方法包括从衬底去除原生氧化物，将衬底定位在处理室内，将衬底加热至第一温度，将衬底冷却至第二温度，将III族前体流入处理室，保持第二温度，同时将III族前体和V族前体流入处理室，直到形成共形层，同时停止III族前体的流动，将处理室加热至退火温度，并将处理室冷却至第二温度。可以通过使用优先蚀刻电介质区域的卤化物气蚀刻来选择性地制备III / V层的沉积。

3. 发明申请

US20120202338A1 EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS 有权
标题翻译：用于拉伸应变应变的高强度硅合金外延
公开(公告)号：US20120202338A1
公开(公告)日：2012-08-09
申请号：US13193576
申请日：2011-07-28
申请人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/0257 , H01L21/02576 , H01L21/0262 , H01L29/1054 , H01L29/78
摘要： Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.
摘要翻译：本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

4. 发明申请

US20110277934A1 METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER 审中-公开
标题翻译：选择沉积外延层的方法
公开(公告)号：US20110277934A1
公开(公告)日：2011-11-17
申请号：US13191020
申请日：2011-07-26
申请人： Zhiyuan Ye , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Saurabh Chopra , Yihwan Kim
IPC分类号： C23F1/08 , C23C16/00
CPC分类号： H01L21/02532 , C23C16/325 , C23C16/56 , C30B25/04 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/02381 , H01L21/02538 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L21/3065 , Y10S438/929
摘要： Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; an etching gas source coupled to the process chamber, the etching gas source including a hydrogen and halogen gas source and a germanium gas source; an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and an exhaust system coupled to the process chamber to control the pressure in the process chamber.
摘要翻译：本文提供了用于选择性沉积外延层的设备。在一些实施例中，用于处理衬底的设备可以包括其中设置有衬底支撑件的处理室; 耦合到处理室的沉积气体源; 耦合到所述处理室的蚀刻气体源，所述蚀刻气体源包括氢和卤素气体源和锗气体源; 能量控制源，以将基底保持在高达600摄氏度的温度; 以及联接到处理室的排气系统，以控制处理室中的压力。

5. 发明授权

US07960256B2 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US07960256B2
公开(公告)日：2011-06-14
申请号：US12779022
申请日：2010-05-12
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

6. 发明申请

US20110124169A1 METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER 有权
标题翻译：选择沉积外延层的方法
公开(公告)号：US20110124169A1
公开(公告)日：2011-05-26
申请号：US12849387
申请日：2010-08-03
申请人： ZHIYUAN YE , SAURABH CHOPRA , YIHWAN KIM
发明人： ZHIYUAN YE , SAURABH CHOPRA , YIHWAN KIM
IPC分类号： H01L21/336 , H01L21/20 , H01L21/306
CPC分类号： H01L21/02532 , C23C16/325 , C23C16/56 , C30B25/04 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/02381 , H01L21/02538 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L21/3065 , Y10S438/929
摘要： Methods for selectively depositing an epitaxial layer are provided herein. In some embodiments, providing a substrate having a monocrystalline first surface and a non-monocrystalline second surface; exposing the substrate to a deposition gas to deposit a layer on the first and second surfaces, the layer comprising a first portion deposited on the first surfaces and a second portion deposited on the second surfaces; and exposing the substrate to an etching gas comprising a first gas comprising hydrogen and a halogen and a second gas comprising at least one of a Group III, IV, or V element to selectively etch the first portion of the layer at a slower rate than the second portion of the layer. In some embodiments, the etching gas comprises hydrogen chloride (HCl) and germane (GeH4).
摘要翻译：本文提供了选择性沉积外延层的方法。在一些实施方案中，提供具有单晶第一表面和非单晶第二表面的基材; 将衬底暴露于沉积气体以在第一和第二表面上沉积层，该层包括沉积在第一表面上的第一部分和沉积在第二表面上的第二部分; 以及将所述衬底暴露于包括包含氢和卤素的第一气体和包含III，IV或V族元素中的至少一种的第二气体的蚀刻气体，以选择性地蚀刻所述层的所述第一部分，第二部分的层。在一些实施方案中，蚀刻气体包括氯化氢（HCl）和锗烷（GeH 4）。

7. 发明申请

US20100221902A1 USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION 有权
标题翻译：在硅胶膜形成过程中使用CL2和/或HCL
公开(公告)号：US20100221902A1
公开(公告)日：2010-09-02
申请号：US12779022
申请日：2010-05-12
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

8. 发明申请

US20090215249A1 METHOD OF FORMING AN EMBEDDED SILICON CARBON EPITAXIAL LAYER 有权
标题翻译：嵌入硅碳外延层的方法
公开(公告)号：US20090215249A1
公开(公告)日：2009-08-27
申请号：US12038288
申请日：2008-02-27
申请人： John Boland , Zhiyuan Ye , Yihwan Kim
发明人： John Boland , Zhiyuan Ye , Yihwan Kim
IPC分类号： H01L21/36
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02639 , H01L29/165 , H01L29/78 , H01L29/7848
摘要： Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.
摘要翻译：公开了用于形成包含硅和碳的嵌入式外延层的方法。具体实施方案涉及在硅晶片上形成包含硅和碳的嵌入式外延层的形成。在具体实施方案中，在衬底或硅晶片上非选择性地形成硅和碳的外延层，去除该层的部分以暴露下面的衬底或硅晶片，并且在暴露的衬底上形成包含硅的外延层，硅片。在具体实施例中，在所得到的含硅外延层上形成栅极。

9. 发明申请

US20060260538A1 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US20060260538A1
公开(公告)日：2006-11-23
申请号：US11494903
申请日：2006-07-28
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

10. 发明授权

US08927066B2 Method and apparatus for gas delivery 有权
标题翻译：气体输送方法和装置
公开(公告)号：US08927066B2
公开(公告)日：2015-01-06
申请号：US13097831
申请日：2011-04-29
申请人： Zhiyuan Ye , Yihwan Kim
发明人： Zhiyuan Ye , Yihwan Kim
IPC分类号： C23C16/448 , C23C16/455
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.
摘要翻译：本文公开了气体输送的方法和装置。在一些实施方案中，气体输送系统包括用于将固体或液体形式的前体储存的安瓿，连接到安瓿的第一导管，并且具有联接到第一气体源的第一端，以将前体的蒸汽从安瓿吸入，第一管道，第二管道，其在位于安瓿下游的第一连接处联接到第一管道，并且具有联接到第二气体源的第一端和联接到处理室的第二端，以及被配置为加热安瓿和至少第一管道的从安瓿到第二管道的第一部分，并仅加热第二管道的第二部分，其中第二管道的第二部分包括第一连接部。

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