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    • 5. 发明授权
    • Thin film transistor substrate and method for manufacturing the same
    • 薄膜晶体管基板及其制造方法
    • US08598581B2
    • 2013-12-03
    • US12434907
    • 2009-05-04
    • Jang-Soo KimJae-Hyoung YounSang-Soo KimDong-Gyu Kim
    • Jang-Soo KimJae-Hyoung YounSang-Soo KimDong-Gyu Kim
    • H01L33/00
    • H01L29/78633H01L27/124H01L27/1248
    • A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member.
    • 薄膜晶体管阵列板的制造方法包括: 在基板上形成包括栅电极和高度增加部件的栅极线,在栅极线和高度增加部件上形成栅绝缘层,形成半导体,包括源电极和漏电极的数据线, 并且在所述栅极绝缘层上与所述高度增加部件的至少一部分重叠,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成阻挡部件,在所述第一 对应于栅极线和数据线的绝缘层,在由阻光构件限定的区域中形成滤色器,在遮光构件和滤色器上形成第二绝缘层,并对第二绝缘层进行构图, 遮光构件或滤色器,以及第一绝缘层,以形成暴露与高度增加构件对准的漏电极的一部分的接触孔。