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1. 发明授权

US08724977B2 System for non radial temperature control for rotating substrates 有权
标题翻译：用于旋转基板的非径向温度控制系统
公开(公告)号：US08724977B2
公开(公告)日：2014-05-13
申请号：US13548858
申请日：2012-07-13
申请人： Wolfgang R. Aderhold , Aaron Muir Hunter , Joseph M. Ranish
发明人： Wolfgang R. Aderhold , Aaron Muir Hunter , Joseph M. Ranish
IPC分类号： A21B2/00
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译：本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。

2. 发明申请

US20130206362A1 SPIKE ANNEAL RESIDENCE TIME REDUCTION IN RAPID THERMAL PROCESSING CHAMBERS 有权
标题翻译：快速热处理炉中SPIKE ANNEAL RESIDENCE TIME减少
公开(公告)号：US20130206362A1
公开(公告)日：2013-08-15
申请号：US13370164
申请日：2012-02-09
申请人： Jiping Li , Blake Koelmel , Aaron Muir Hunter , Wolfgang R. Aderhold
发明人： Jiping Li , Blake Koelmel , Aaron Muir Hunter , Wolfgang R. Aderhold
IPC分类号： F25B29/00 , F27B5/14 , A21B2/00 , F28D15/00
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67115
摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.
摘要翻译：本发明一般涉及在快速热处理期间冷却衬底的方法。所述方法通常包括将基底定位在腔室中并向基底施加热量。在将衬底的温度升高到所需温度之后，快速冷却衬底。通过增加通过室的气体的流速来促进衬底的快速冷却。通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。冷却板通过由位于其间的气体促进的传导从衬底去除热量。可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。在衬底充分冷却之后，将衬底从腔室中取出。

3. 发明授权

US08939760B2 Spike anneal residence time reduction in rapid thermal processing chambers 有权
标题翻译：快速热处理室中尖峰退火停留时间的减少
公开(公告)号：US08939760B2
公开(公告)日：2015-01-27
申请号：US13370164
申请日：2012-02-09
申请人： Jiping Li , Blake Koelmel , Aaron Muir Hunter , Wolfgang R. Aderhold
发明人： Jiping Li , Blake Koelmel , Aaron Muir Hunter , Wolfgang R. Aderhold
IPC分类号： F27D15/02
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67115
摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.
摘要翻译：本发明一般涉及在快速热处理期间冷却衬底的方法。所述方法通常包括将基底定位在腔室中并向基底施加热量。在将衬底的温度升高到所需温度之后，快速冷却衬底。通过增加通过室的气体的流速来促进衬底的快速冷却。通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。冷却板通过由位于其间的气体促进的传导从衬底去除热量。可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。在衬底充分冷却之后，将衬底从腔室中取出。

4. 发明授权

US08979087B2 Substrate supporting edge ring with coating for improved soak performance 有权
公开(公告)号：US08979087B2
公开(公告)日：2015-03-17
申请号：US13486807
申请日：2012-06-01
申请人： Joseph M. Ranish , Aaron Muir Hunter
发明人： Joseph M. Ranish , Aaron Muir Hunter
IPC分类号： B23Q3/00 , H01L21/687 , H01L21/67
CPC分类号： H01L21/68757 , H01L21/67115 , H01L21/68735 , Y10S269/909
摘要： Embodiments of the present invention provide a substrate supporting edge ring for supporting a substrate. In one embodiment, a substrate support ring is provided. The substrate support ring comprises an annular body. The annular body comprises an outer band extending radially inward from an outer annular sidewall; and a substrate supporting region extending inward from an inner portion of the outer band, wherein the annular body comprises a first material that is exposed and at least a portion of the substrate supporting region is covered with a coating comprising a second material that is different than the first material.

5. 发明授权

US08765618B2 Annealing apparatus using two wavelengths of continuous wave laser radiation 有权
公开(公告)号：US08765618B2
公开(公告)日：2014-07-01
申请号：US13485699
申请日：2012-05-31
申请人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
发明人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
IPC分类号： H01L21/268
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , B23K26/352 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

6. 发明授权

US07860379B2 Temperature measurement and control of wafer support in thermal processing chamber 有权
标题翻译：热处理室中晶片支架的温度测量和控制
公开(公告)号：US07860379B2
公开(公告)日：2010-12-28
申请号：US11623238
申请日：2007-01-15
申请人： Aaron Muir Hunter , Bruce E. Adams , Mehran Behdjat , Rajesh S. Ramanujam , Joseph M. Ranish
发明人： Aaron Muir Hunter , Bruce E. Adams , Mehran Behdjat , Rajesh S. Ramanujam , Joseph M. Ranish
IPC分类号： A21B2/00 , A21B1/00 , C23C16/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.
摘要翻译：本发明提供了用于在快速热处理期间实现对衬底的均匀加热的装置和方法。更具体地，本发明提供了用于在快速热处理期间控制支撑衬底的边缘环的温度的装置和方法，以改善穿过衬底的温度均匀性。

7. 发明申请

US20130280824A1 APPARATUS AND METHOD FOR MEASURING RADIATION ENERGY DURING THERMAL PROCESSING 有权
标题翻译：用于在热处理过程中测量辐射能量的装置和方法
公开(公告)号：US20130280824A1
公开(公告)日：2013-10-24
申请号：US13903387
申请日：2013-05-28
申请人： Joseph M. Ranish , Blake Koelmel , Aaron Muir Hunter
发明人： Joseph M. Ranish , Blake Koelmel , Aaron Muir Hunter
IPC分类号： H01L21/66
CPC分类号： H01L22/10 , H01L21/67115 , H01L21/67248
摘要： Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.
摘要翻译：本发明的实施例提供了用于在热处理期间减少加热源辐射对温度测量的影响的装置和方法。在本发明的一个实施例中，将背景辐射能（例如热处理室的能量源）标记在所选择的光谱内，然后通过测量所选光谱内的参考波长的辐射能来确定背景的特性以及刚好在所选频谱之外的比较波长。

8. 发明申请

US20130026693A1 SUBSTRATE SUPPORTING EDGE RING WITH COATING FOR IMPROVED SOAK PERFORMANCE 有权
公开(公告)号：US20130026693A1
公开(公告)日：2013-01-31
申请号：US13486807
申请日：2012-06-01
申请人： Joseph M. Ranish , Aaron Muir Hunter
发明人： Joseph M. Ranish , Aaron Muir Hunter
IPC分类号： H01L21/683
CPC分类号： H01L21/68757 , H01L21/67115 , H01L21/68735 , Y10S269/909
摘要： Embodiments of the present invention provide a substrate supporting edge ring for supporting a substrate. In one embodiment, a substrate support ring is provided. The substrate support ring comprises an annular body. The annular body comprises an outer band extending radially inward from an outer annular sidewall; and a substrate supporting region extending inward from an inner portion of the outer band, wherein the annular body comprises a first material that is exposed and at least a portion of the substrate supporting region is covered with a coating comprising a second material that is different than the first material.

9. 发明授权

US06888104B1 Thermally matched support ring for substrate processing chamber 有权
标题翻译：用于衬底加工室的热匹配支撑环
公开(公告)号：US06888104B1
公开(公告)日：2005-05-03
申请号：US10773650
申请日：2004-02-05
申请人： Joseph M. Ranish , Aaron Muir Hunter , Balasubramanian Ramachandran , Jallepally Ravi , Sundar Ramamurthy , Vedapuram S. Achutharaman , Khurshed Sorabji
发明人： Joseph M. Ranish , Aaron Muir Hunter , Balasubramanian Ramachandran , Jallepally Ravi , Sundar Ramamurthy , Vedapuram S. Achutharaman , Khurshed Sorabji
IPC分类号： F27B5/14 , F27B17/00 , F27D5/00 , F27D19/00 , F27D21/00 , H01L21/687
CPC分类号： H01L21/68735 , F27B17/0025 , F27D5/0037 , F27D19/00 , F27D21/00 , H01L21/68757
摘要： A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10−5 m2K/J to about 9×10−4 m2K/J.
摘要翻译：衬底支撑环具有带子，该带具有至少部分地围绕衬底周边的内周边。带具有辐射吸收表面。唇缘从带的内周向径向向内延伸以支撑基底。带和唇缘可以由碳化硅形成，并且辐射吸收表面可以是碳化硅的氧化层。在一个版本中，带和唇具有组合的热质量T m，并且辐射吸收表面具有吸收率A和表面积S SUB，使得比率（AxS a）/ T m是约4×10 -5 / 2K / J至约9×10 9 / SUP> -4 / 2K / J。

10. 发明授权

US10421151B2 Laser noise elimination in transmission thermometry 有权
公开(公告)号：US10421151B2
公开(公告)日：2019-09-24
申请号：US13789982
申请日：2013-03-08
申请人： Jiping Li , Aaron Muir Hunter , Thomas Haw
发明人： Jiping Li , Aaron Muir Hunter , Thomas Haw
IPC分类号： B23K26/00 , G01N21/59 , G01J5/02 , G01J5/08 , G01J1/04 , G01J5/00 , G01J5/06 , G01J5/58
摘要： Apparatus and methods for measuring the temperature of a substrate are disclosed. The apparatus includes a source of temperature-indicating radiation, a detector for the temperature-indicating radiation, and a decorrelator disposed in an optical path between the source of temperature-indicating radiation and the detector for the temperature-indicating radiation. The decorrelator may be a broadband amplifier and/or a mode scrambler. A broadband amplifier may be a broadband laser, Bragg grating, a fiber Bragg grating, a Raman amplifier, a Brillouin amplifier, or combinations thereof. The decorrelator is selected to emit radiation that is transmitted, at least in part, by the substrate being monitored. The source is matched to the decorrelator such that the emission spectrum of the source is within the gain bandwidth of the decorrelator, if the decorrelator is a gain-driven device.

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