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1. 发明授权

US07141806B1 EUV light source collector erosion mitigation 有权
标题翻译： EUV光源收集器侵蚀减轻
公开(公告)号：US07141806B1
公开(公告)日：2006-11-28
申请号：US11237649
申请日：2005-09-27
申请人： William N. Partlo , Alexander I. Ershov , Igor V. Fomenkov , David W. Myers , William Oldham
发明人： William N. Partlo , Alexander I. Ershov , Igor V. Fomenkov , David W. Myers , William Oldham
IPC分类号： G01J1/00
CPC分类号： G21K1/062 , B82Y10/00 , H05G2/003 , H05G2/005
摘要： An EUV light source collector erosion mitigation method and apparatus for a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma, is disclosed which may comprise including within an EUV plasma source material a replacement material. The replacement material may comprise the same material as the capping material of the multilayered mirror. The replacement material may comprise a material that is essentially transparent to light in a selected band of EUV light, e.g., a spectrum of EUV light generated in a plasma of a plasma source material. The replacement material may comprise a material not susceptible to being etched by an etching material used to remove deposited plasma source material from the collector, e.g., a halogen etchant.
摘要翻译：公开了一种用于收集器的EUV光源收集器侵蚀缓解方法和装置，其包括多层反射镜收集器，其包括由由与在EUV发光等离子体中产生的材料的去除相互作用而被去除的封盖材料组成的收集器外表面。可以包括在EUV等离子体源材料内包括替换材料。替代材料可以包括与多层反射镜的封盖材料相同的材料。替代材料可以包括对EUV光的选定频带中的光基本上透明的材料，例如在等离子体源材料的等离子体中产生的EUV光的光谱。替代材料可以包括不易被蚀刻材料蚀刻的材料，用于从集电体例如卤素蚀刻剂去除沉积的等离子体源材料。

2. 发明授权

US6128323A Reliable modular production quality narrow-band high REP rate excimer laser 有权
标题翻译：可靠的模块化生产质量窄带高REP率准分子激光器
公开(公告)号：US6128323A
公开(公告)日：2000-10-03
申请号：US157067
申请日：1998-09-18
申请人： David W. Myers , Herve A. Besaucele , Palash P. Das , Thomas P. Duffey , Alexander I. Ershov , Igor V. Fomenkov , Thomas Hofmann , Richard G. Morton , Richard M. Ness , Peter C. Newman , Robert G. Ozarski , Gamaralalage G. Padmabandu , William N. Partlo , Daniel A. Rothweil , Richard L. Sandstrom , Paul S. Thompson , Richard C. Ujazdowski , Tom A. Watson , R. Kyle Webb , Paolo Zambon
发明人： David W. Myers , Herve A. Besaucele , Palash P. Das , Thomas P. Duffey , Alexander I. Ershov , Igor V. Fomenkov , Thomas Hofmann , Richard G. Morton , Richard M. Ness , Peter C. Newman , Robert G. Ozarski , Gamaralalage G. Padmabandu , William N. Partlo , Daniel A. Rothweil , Richard L. Sandstrom , Paul S. Thompson , Richard C. Ujazdowski , Tom A. Watson , R. Kyle Webb , Paolo Zambon
IPC分类号： G03F7/20 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/041 , H01S3/08 , H01S3/081 , H01S3/097 , H01S3/0971 , H01S3/1055 , H01S3/134 , H01S3/139 , H01S3/225 , H03K3/57 , H03K17/80 , H01S3/00
CPC分类号： G03F7/70025 , G03F7/70041 , G03F7/70358 , G03F7/70558 , G03F7/70575 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/041 , H01S3/097 , H01S3/0971 , H01S3/1055 , H01S3/134 , H01S3/225 , H03K17/80 , H03K3/57 , H01S3/08009 , H01S3/0812 , H01S3/1392 , H01S3/2251 , H01S3/2256
摘要： The present invention provides a reliable modular production quality excimer laser capable of producing 10 mJ laser pulses at 2000 Hz with a full width half, maximum bandwidth of about 0.6 pm or less. Replaceable modules include a laser chamber; a pulse power system comprised of three modules; an optical resonator comprised of a line narrowing module and an output coupler module; a wavemeter module, an electrical control module, a cooling water module and a gas control module. Improvements in the laser chamber permitting the higher pulse rates and improved bandwidth performance include a single upstream preionizer tube and a high efficiency chamber. The chamber is designed for operation at lower fluorine concentration. Important improvements have been provided in the pulse power unit to produce faster rise time and improved pulse energy control. These improvements include an increased capacity high voltage power supply with a voltage bleed-down circuit for precise voltage trimming, an improved commutation module that generates a high voltage pulse from the capacitors charged by the high voltage power supply and amplifies the pulse voltage 23 times with a very fast voltage transformer having a secondary winding consisting of a single four-segment stainless steel rod. A novel design for the compression head saturable inductor greatly reduces the quantity of transformer oil required and virtually eliminates the possibility of oil leakage which in the past has posed a hazard.
摘要翻译：本发明提供了一种可靠的模块化生产质量准分子激光器，其能够在2000Hz下产生10mJ激光脉冲，全宽度为一半，最大带宽为约0.6μm或更小。可更换模块包括激光室; 由三个模块组成的脉冲电源系统; 光学谐振器，包括线窄模块和输出耦合器模块; 波形计模块，电气控制模块，冷却水模块和气体控制模块。允许更高脉冲速率和改进的带宽性能的激光室的改进包括单个上游预分解器管和高效室。该室设计用于在较低的氟浓度下运行。在脉冲功率单元中已经提供了重要的改进，以产生更快的上升时间和改进的脉冲能量控制。这些改进包括增加容量的高压电源，具有用于精确电压调整的电压降低电路，改进的换向模块，其从由高压电源充电的电容器产生高电压脉冲，并用脉冲电压放大23次具有由单个四段不锈钢棒组成的次级绕组的非常快速的电压互感器。用于压缩头可饱和电感器的新颖设计大大减少了所需的变压器油的数量，并且几乎消除了过去漏油的可能性。

3. 发明授权

US07567607B2 Very narrow band, two chamber, high rep-rate gas discharge laser system 有权
标题翻译：非常窄带，二室，高倍率气体放电激光系统
公开(公告)号：US07567607B2
公开(公告)日：2009-07-28
申请号：US11346519
申请日：2006-02-01
申请人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scot T. Smith , William G. Hulburd , Jeffrey Oicles
发明人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scot T. Smith , William G. Hulburd , Jeffrey Oicles
IPC分类号： H01S3/22 , H01S3/223
CPC分类号： G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要： An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.
摘要翻译：公开了一种振荡放大器气体放电激光器系统和方法，其可以包括第一激光器单元，该第一激光器单元可以包括可包含受激准分子或分子氟激光气体介质的第一放电区域; 限定含有激光气体介质的第一放电区域的第一对电极，用于使在所述第一放电区域中产生的输出激光脉冲光束脉冲的光谱带宽变窄的线窄化单元; 第二激光单元，其可以包括可包含受激准分子或分子氟激光气体介质的第二放电室; 限定包含所述激光气体介质的所述第二放电区域的第二对电极; 脉冲功率系统，其向所述第一对电极和所述第二对电极提供电脉冲，在所述相应的第一和第二对电极之间的所述激光气体介质中产生气体放电，以及激光参数控制机构修改所选择的所选择的参数通过控制第一对电极之间的气体放电的发生时间和第二对电极之间的气体放电的发生的时间，由所述气体放电激光系统产生的激光输出光脉冲束脉冲。

4. 发明授权

US07323703B2 EUV light source 有权
标题翻译： EUV光源
公开(公告)号：US07323703B2
公开(公告)日：2008-01-29
申请号：US11647007
申请日：2006-12-27
申请人： I. Roger Oliver , William N. Partlo , Igor V. Fomenkov , Alexander I. Ershov , Norbert Bowering , John Viatella , David W. Myers
发明人： I. Roger Oliver , William N. Partlo , Igor V. Fomenkov , Alexander I. Ershov , Norbert Bowering , John Viatella , David W. Myers
IPC分类号： H01J35/20
CPC分类号： G03F7/70033 , B82Y10/00 , G03F7/70175 , G03F7/70916 , G21K1/062 , G21K2201/061 , G21K2201/065 , G21K2201/067 , H05G2/003 , H05G2/005 , H05G2/006 , H05G2/008
摘要： An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.
摘要翻译：描述了可以包括可以包括等离子体形成室的等离子体产生的极紫外（“EUV”）光源多层收集器的装置和方法; 等离子体形成室内的壳体，具有焦点的收集器形状; 壳体具有足够的尺寸和热质量以将工作热量从多层反射器散开，并且在壳体的与焦点相对的一侧上从壳体的表面辐射热量。壳的材料可以包括选自可以包括碳化硅，硅，Zerodur或ULE玻璃，铝，铍，钼，铜和镍的组的材料。装置和方法可以包括指向壳体的至少一个辐射加热器，以将壳体的稳态温度维持在所选择的工作温度范围内。

5. 发明授权

US07218661B2 Line selected F2 two chamber laser system 失效
标题翻译：线选F2双腔激光系统
公开(公告)号：US07218661B2
公开(公告)日：2007-05-15
申请号：US10854614
申请日：2004-05-25
申请人： David S. Knowles , Daniel J. W. Brown , Richard L. Sandstrom , German E. Rylov , Eckehard D. Onkels , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Richard C. Ujazdowski , Richard M. Ness , Scot T. Smith , William G. Hulburd
发明人： David S. Knowles , Daniel J. W. Brown , Richard L. Sandstrom , German E. Rylov , Eckehard D. Onkels , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Richard C. Ujazdowski , Richard M. Ness , Scot T. Smith , William G. Hulburd
IPC分类号： H01S3/22
CPC分类号： H01S3/2366 , G01J9/00 , G03F7/70025 , G03F7/70041 , G03F7/70575 , G03F7/70933 , H01S3/0057 , H01S3/0071 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1305 , H01S3/134 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333
摘要： An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
摘要翻译：一种注射种子模块化气体放电激光系统，其能够以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。提供两个单独的放电室，其中之一是主振荡器的一部分，其产生在第二放电室中放大的非常窄的带状晶体束。可以单独控制室，允许主振荡器中的波长参数的单独优化和放大室中的脉冲能量参数的优化。配置为MOPA并被专门设计用作集成电路光刻的光源的F 2 N 2激光系统中的优选实施例。在优选的MOPA实施例中，每个腔室包括单个切向风扇，其通过在比脉冲之间的大约0.25毫秒更短的时间内清除来自放电区域的碎屑来提供足够的气流以允许以4000Hz或更高的脉冲速率操作。主振荡器配备有用于选择最强的F 2/2谱线的线选择包。

6. 发明授权

US06567450B2 Very narrow band, two chamber, high rep rate gas discharge laser system 有权
公开(公告)号：US06567450B2
公开(公告)日：2003-05-20
申请号：US09943343
申请日：2001-08-29
申请人： David W. Myers , Herve A. Besaucele , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Xiaojiang J. Pan , Eckehard D. Onkels , Richard M. Ness , Daniel J. W. Brown
发明人： David W. Myers , Herve A. Besaucele , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Xiaojiang J. Pan , Eckehard D. Onkels , Richard M. Ness , Daniel J. W. Brown
IPC分类号： H01S322
CPC分类号： H01S3/2366 , G01J9/00 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333
摘要： An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

7. 发明授权

US07061961B2 Very narrow band, two chamber, high rep-rate gas discharge laser system 有权
公开(公告)号：US07061961B2
公开(公告)日：2006-06-13
申请号：US11199691
申请日：2005-08-09
申请人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scot T. Smith , William G. Hulburd , Jeffrey Oicles
发明人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scot T. Smith , William G. Hulburd , Jeffrey Oicles
IPC分类号： H01S3/22
CPC分类号： G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要： An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.

8. 发明授权

US06625191B2 Very narrow band, two chamber, high rep rate gas discharge laser system 有权
公开(公告)号：US06625191B2
公开(公告)日：2003-09-23
申请号：US10012002
申请日：2001-11-30
申请人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scott T. Smith , William G. Hulburd , Jeffrey Oicles
发明人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scott T. Smith , William G. Hulburd , Jeffrey Oicles
IPC分类号： H01S322
CPC分类号： G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要： An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

9. 发明授权

US08075732B2 EUV collector debris management 失效
标题翻译： EUV收集器碎片管理
公开(公告)号：US08075732B2
公开(公告)日：2011-12-13
申请号：US10979945
申请日：2004-11-01
申请人： William N. Partlo , Richard L. Sandstrom , Igor V. Fomenkov , Alexander I. Ershov , William Oldham , William F. Marx , Oscar Hemberg
发明人： William N. Partlo , Richard L. Sandstrom , Igor V. Fomenkov , Alexander I. Ershov , William Oldham , William F. Marx , Oscar Hemberg
IPC分类号： C23F1/00
CPC分类号： B08B7/00
摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
摘要翻译：可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。蚀刻剂源材料可以包含卤素或卤素化合物。蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。还可以存在离子加速剂将离子朝向反射表面加速。离子可以包括蚀刻剂源材料。该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

10. 发明授权

US07317196B2 LPP EUV light source 失效
标题翻译： LPP EUV光源
公开(公告)号：US07317196B2
公开(公告)日：2008-01-08
申请号：US10979919
申请日：2004-11-01
申请人： William N. Partlo , Daniel J. W. Brown , Igor V. Fomenkov , Alexander I. Ershov , David W. Myers
发明人： William N. Partlo , Daniel J. W. Brown , Igor V. Fomenkov , Alexander I. Ershov , David W. Myers
IPC分类号： H01J35/20
CPC分类号： B82Y10/00 , G03F7/70033 , H05G2/003 , H05G2/008
摘要： An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.
摘要翻译：描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法，其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体，以将等离子体中的发射材料压缩到等离子体的发射区域。等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲，以具有相关联的较低的临界密度，从而在由等离子体的波长定义的等离子体的区域内的等离子体内发生吸收等离子体照射脉冲从初始目标照射位置充分分离，以实现发射材料的压缩，并且可以压缩发射区域。激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。可以从初始目标表面去除等离子体照射脉冲的沉积区域，以确保有利地发射等离子体的压缩。高转换效率的激光产生的等离子体极紫外（“EUV”）光源可以包括激光初始靶照射脉冲发生机构，用目标照射脉冲照射等离子体引发目标，以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。

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