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1. 发明授权

US5445711A Low resistance, thermally stable electrode structure for electroluminescent displays 失效
标题翻译：用于电致发光显示器的低电阻，热稳定的电极结构
公开(公告)号：US5445711A
公开(公告)日：1995-08-29
申请号：US250969
申请日：1994-05-31
申请人： William J. Tanski , Roger Carroll , Emilio J. Branciforte
发明人： William J. Tanski , Roger Carroll , Emilio J. Branciforte
IPC分类号： H05B33/22 , H05B33/12 , H05B33/26 , H05B33/28 , B44C1/22 , C23F1/02
CPC分类号： H05B33/28
摘要： An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).
摘要翻译：电致发光显示器包括在透明电极（6）的一部分上形成的透明电极（4）和金属辅助结构（6），使得金属辅助结构（6）与透明电极（4）电接触。金属辅助结构（6）包括第一耐火金属层（10），形成在第一耐火金属层（10）上的主导体层（12）和形成在主导体层上的第二难熔金属层（14）（12）。当电致发光显示器被退火以激活磷光体层（18）时，第一和第二难熔金属层（10,14）能够保护主导体层（12）不被氧化。在替代实施例中，电致发光显示器包括基板（2）和形成在基板（2）上的金属电极（22）。金属电极（22）包括形成在第一难熔金属层（10）上的第一耐火金属层（10），主导体层（12）和形成在主导体层（10）上的第二耐火金属层（14） 12）。

2. 发明授权

US5559399A Low resistance, thermally stable electrode structure for electroluminescent displays 失效
公开(公告)号：US5559399A
公开(公告)日：1996-09-24
申请号：US897201
申请日：1992-06-11
申请人： William J. Tanski , Roger Carroll , Emilio J. Branciforte
发明人： William J. Tanski , Roger Carroll , Emilio J. Branciforte
IPC分类号： H05B33/22 , H05B33/12 , H05B33/26 , H05B33/28 , H01J1/62
CPC分类号： H05B33/28
摘要： An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).

3. 发明授权

US5128734A Surface channel hact 失效
标题翻译：表面通道
公开(公告)号：US5128734A
公开(公告)日：1992-07-07
申请号：US591656
申请日：1990-10-02
申请人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte , Robert N. Sacks , Roger D. Carroll
发明人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte , Robert N. Sacks , Roger D. Carroll
IPC分类号： H01L29/765 , H03H9/02
CPC分类号： H01L29/765 , H03H9/02976
摘要： A simplified heterostructure charge transport device has a GaAs transport layer that is the top layer of the device, deposited on an (Al,Ga) As barrier layer for vertical confinement of charge packets. Confinement at the top surface is provided by pinning of the conduction band surface states.
摘要翻译：简化的异质结电荷传输器件具有作为器件顶层的GaAs传输层，其沉积在用于垂直限制电荷包的（Al，Ga）As阻挡层上。顶表面的限制是通过固定导带表面状态来提供的。

4. 发明授权

US5320977A Method and apparatus for selecting the resistivity of epitaxial layers in III-V devices 失效
标题翻译：用于选择III-V器件中外延层电阻率的方法和装置
公开(公告)号：US5320977A
公开(公告)日：1994-06-14
申请号：US821239
申请日：1992-01-10
申请人： William J. Tanski , Emilio J. Branciforte
发明人： William J. Tanski , Emilio J. Branciforte
IPC分类号： H03H9/02 , H01G7/00
CPC分类号： H03H9/02976 , Y10S438/934
摘要： A novel heterostructure acoustic charge transport (HACT) device is disclosed having an optimized charge density. The device includes a transducer fabricated on a substrate structure that launches surface acoustic waves. A reflector is formed in the substrate structure at an end portion adjacent to the transducer for reflecting the surface acoustic Waves. Also included is an electrode configured with the transport channel at an end thereof distal to the transducer for generating electrical signal equivalents of the propagating electrode charge. During fabrication, the resistivity of the layers initially configured at a lower than desired value. The layer is subsequently etched to raise the resistivity to the desired value.
摘要翻译：公开了具有优化的电荷密度的新颖的异质结构声电荷传输（HACT）器件。该装置包括在发射表面声波的基板结构上制造的换能器。反射器在基板结构中在与换能器相邻的端部处形成，用于反射表面声波。还包括一个电极，其配置有在传感器远端的一端的传输通道，用于产生传播电极电荷的电信号。在制造期间，最初配置在低于期望值的层的电阻率。随后蚀刻该层以将电阻率提高到所需值。

5. 发明授权

US5159299A HACT electrode configuration 失效
标题翻译： HACT电极配置
公开(公告)号：US5159299A
公开(公告)日：1992-10-27
申请号：US591653
申请日：1990-10-02
申请人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte
发明人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte
IPC分类号： H03H9/02
CPC分类号： H03H9/02976
摘要： A heterostructure acoustic charge transport (HACT) device having a number of signal tap electrodes has revealed unexpected insensitivity to electrode spacing and unexpected sensitivity to electrode width. Spacing of one SAW wavelength between consecutive electrodes and an electrode width of .lambda./20 are preferred.
摘要翻译：具有多个信号抽头电极的异质结构声电荷传输（HACT）器件已经显示出对电极间隔的意外不敏感性和对电极宽度的意想不到的敏感性。在连续电极之间的一个SAW波长的间隔和λ/ 20的电极宽度是优选的。

6. 发明授权

US5128579A Act electrode configuration for linear readout 失效
标题翻译：用于线性读数的电极配置
公开(公告)号：US5128579A
公开(公告)日：1992-07-07
申请号：US591581
申请日：1990-10-02
申请人： Roger D. Carroll , Sears W. Merritt , Donald E. Cullen , Emilio J. Branciforte , William J. Tanski
发明人： Roger D. Carroll , Sears W. Merritt , Donald E. Cullen , Emilio J. Branciforte , William J. Tanski
IPC分类号： H03H9/02
CPC分类号： H03H9/02976
摘要： An acoustic charge transport device having a number of signal tap electrodes has revealed unexpected insensitivity to electrode spacing and unexpected sensitivity to electrode width. Spacing of one-half SAW wavelength between consecutive electrodes and an electrode width of .lambda./20 are preferred for low frequency response.
摘要翻译：具有多个信号抽头电极的声电荷传输装置显示出对电极间隔的意外不敏感性和对电极宽度的意想不到的敏感性。对于低频响应，优选连续电极之间的一半SAW波长和λ/ 20的电极宽度的间隔。

7. 发明授权

US5214338A Energy coupler for a surface acoustic wave (SAW) resonator 失效
标题翻译：表面声波（SAW）谐振器的能量耦合器
公开(公告)号：US5214338A
公开(公告)日：1993-05-25
申请号：US438667
申请日：1989-11-17
申请人： William J. Tanski
发明人： William J. Tanski
IPC分类号： H03B5/32 , H03H9/25
CPC分类号： H03H9/25 , H03B5/326
摘要： A novel surface acoustic wave (SAW) element for use in a stabilized oscillator circuit capable of coupling directly to external circuitry includes a pair of opposed transducers formed on a surface of a piezoelectric crystal for launching surface acoustic waves into a resonant cavity formed by opposed reflectors on the crystal surface. The element is characterized by a supplemental transducer coupled to the cavity for directly providing external circuitry with signals corresponding to the resonant surface acoustic waves.
摘要翻译：用于能够直接耦合到外部电路的稳定振荡器电路中的新型表面声波（SAW）元件包括形成在压电晶体表面上的一对相对的换能器，用于将表面声波发射到由相对的反射器形成的谐振腔中在水晶面上。元件的特征在于耦合到空腔的补充换能器，用于直接向外部电路提供与谐振表面声波相对应的信号。

8. 发明授权

US4267534A Surface acoustic wave reflectors with weighted arrays of segmented and non-segmented lineal elements 失效
标题翻译：具有分段和非分段线性元素的加权阵列的表面声波反射器
公开(公告)号：US4267534A
公开(公告)日：1981-05-12
申请号：US152463
申请日：1980-05-23
申请人： William J. Tanski
发明人： William J. Tanski
IPC分类号： H03H9/02 , H03H9/64 , H03H9/68
CPC分类号： H03H9/6493 , H03H9/02771
摘要： Preferred reflective surface wave processors employ cooperating serially disposed reflector sections. At least one reflecting section comprises an array of non-segmented reflecting grooves in which certain grooves are omitted to form a withdrawal array. Cooperatively coupled to this non-segmented array is an array of segmented grooves. The elements of the segmented array may be made up of progressively fewer segments in regularly spaced lines. The segments in any one segmented line may selectively be of equal lengths randomly spaced within a given line.
摘要翻译：优选的反射表面波处理器采用配合的串联布置的反射器部分。至少一个反射部分包括非分段反射槽的阵列，其中省略了某些凹槽以形成取出阵列。与该非分段阵列协同耦合是分段凹槽的阵列。分段阵列的元素可以由规则间隔的线中逐渐减少的段组成。任何一个分段行中的段可以选择性地具有在给定行内随机间隔的相等长度。

9. 发明授权

US4893161A Quantum-well acoustic charge transport device 失效
标题翻译：量子阱声电荷传输装置
公开(公告)号：US4893161A
公开(公告)日：1990-01-09
申请号：US100795
申请日：1987-09-24
申请人： William J. Tanski , Sears W. Merritt , Robert N. Sacks
发明人： William J. Tanski , Sears W. Merritt , Robert N. Sacks
IPC分类号： H01L29/737 , H03H9/02
CPC分类号： H01L29/7371 , H03H9/02976
摘要： An improved acoustic charge transport device having an acoustic wave passing through a piezoelectric semiconductor is improved by utilizing heterostructure Quantum-wells for confining charge packets.
摘要翻译：具有通过压电半导体的声波的改进的声电荷传输装置通过利用用于限制电荷分组的异质结构量子阱来改进。

10. 发明授权

US4890369A Method of manufacturing saw devices 失效
标题翻译：制造锯装置的方法
公开(公告)号：US4890369A
公开(公告)日：1990-01-02
申请号：US263933
申请日：1988-10-28
申请人： William J. Tanski
发明人： William J. Tanski
IPC分类号： H03H3/08 , H01L41/24 , H03H9/145
CPC分类号： H03H3/08 , H01L41/332 , Y10T29/42 , Y10T29/49004
摘要： A method of manufacturing surface acoustic wave devices includes providing a dielectric substrate with a plurality of channels which open onto a substrate surface region and each of which accommodates a metallic electrode, the electrodes being recessed below the substrate surface region by an actual distance which at least equals a desired distance at which the electrodes have a minimum acoustic reflectivity, testing the performance of the device to ascertain at least the acoustic reflectivity of the electrodes, and etching at least the dielectric substrate, when it is ascertained during the testing that the acoustic electrode reflectivity is excessive, at least at the substrate surface region to a predetermined etching depth. The use of this method results in a device having reduced post-etching acoustic electrode reflectivity as a result of the thus obtained reduction in the difference between the actual and desired distances.

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