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1. 发明授权

US5128734A Surface channel hact 失效
标题翻译：表面通道
公开(公告)号：US5128734A
公开(公告)日：1992-07-07
申请号：US591656
申请日：1990-10-02
申请人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte , Robert N. Sacks , Roger D. Carroll
发明人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte , Robert N. Sacks , Roger D. Carroll
IPC分类号： H01L29/765 , H03H9/02
CPC分类号： H01L29/765 , H03H9/02976
摘要： A simplified heterostructure charge transport device has a GaAs transport layer that is the top layer of the device, deposited on an (Al,Ga) As barrier layer for vertical confinement of charge packets. Confinement at the top surface is provided by pinning of the conduction band surface states.
摘要翻译：简化的异质结电荷传输器件具有作为器件顶层的GaAs传输层，其沉积在用于垂直限制电荷包的（Al，Ga）As阻挡层上。顶表面的限制是通过固定导带表面状态来提供的。

2. 发明授权

US5128579A Act electrode configuration for linear readout 失效
标题翻译：用于线性读数的电极配置
公开(公告)号：US5128579A
公开(公告)日：1992-07-07
申请号：US591581
申请日：1990-10-02
申请人： Roger D. Carroll , Sears W. Merritt , Donald E. Cullen , Emilio J. Branciforte , William J. Tanski
发明人： Roger D. Carroll , Sears W. Merritt , Donald E. Cullen , Emilio J. Branciforte , William J. Tanski
IPC分类号： H03H9/02
CPC分类号： H03H9/02976
摘要： An acoustic charge transport device having a number of signal tap electrodes has revealed unexpected insensitivity to electrode spacing and unexpected sensitivity to electrode width. Spacing of one-half SAW wavelength between consecutive electrodes and an electrode width of .lambda./20 are preferred for low frequency response.
摘要翻译：具有多个信号抽头电极的声电荷传输装置显示出对电极间隔的意外不敏感性和对电极宽度的意想不到的敏感性。对于低频响应，优选连续电极之间的一半SAW波长和λ/ 20的电极宽度的间隔。

3. 发明授权

US5159299A HACT electrode configuration 失效
标题翻译： HACT电极配置
公开(公告)号：US5159299A
公开(公告)日：1992-10-27
申请号：US591653
申请日：1990-10-02
申请人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte
发明人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte
IPC分类号： H03H9/02
CPC分类号： H03H9/02976
摘要： A heterostructure acoustic charge transport (HACT) device having a number of signal tap electrodes has revealed unexpected insensitivity to electrode spacing and unexpected sensitivity to electrode width. Spacing of one SAW wavelength between consecutive electrodes and an electrode width of .lambda./20 are preferred.
摘要翻译：具有多个信号抽头电极的异质结构声电荷传输（HACT）器件已经显示出对电极间隔的意外不敏感性和对电极宽度的意想不到的敏感性。在连续电极之间的一个SAW波长的间隔和λ/ 20的电极宽度是优选的。

4. 发明授权

US4893161A Quantum-well acoustic charge transport device 失效
标题翻译：量子阱声电荷传输装置
公开(公告)号：US4893161A
公开(公告)日：1990-01-09
申请号：US100795
申请日：1987-09-24
申请人： William J. Tanski , Sears W. Merritt , Robert N. Sacks
发明人： William J. Tanski , Sears W. Merritt , Robert N. Sacks
IPC分类号： H01L29/737 , H03H9/02
CPC分类号： H01L29/7371 , H03H9/02976
摘要： An improved acoustic charge transport device having an acoustic wave passing through a piezoelectric semiconductor is improved by utilizing heterostructure Quantum-wells for confining charge packets.
摘要翻译：具有通过压电半导体的声波的改进的声电荷传输装置通过利用用于限制电荷分组的异质结构量子阱来改进。

5. 发明授权

US5283444A Increased well depth hact using a strained layer superlattice 失效
标题翻译：使用应变层超晶格增加深度深度
公开(公告)号：US5283444A
公开(公告)日：1994-02-01
申请号：US918830
申请日：1992-07-24
申请人： Robert N. Sacks , Thomas W. Grudkowski , Donald E. Cullen , William J. Tanski
发明人： Robert N. Sacks , Thomas W. Grudkowski , Donald E. Cullen , William J. Tanski
IPC分类号： H01L29/15 , H03H9/02 , H01L29/161 , H01L29/205
CPC分类号： H03H9/02976 , H01L29/155
摘要： A heterojunction acoustic charge transport device (HACT) having a charge transport channel 39 which is sandwiched between upper and lower charge confinement layers, 14,20, has the charge transport channel 39 made of a Strained Layer Superlattice (SLS) comprising alternating deep-well semiconductor layers 40, that provide a deep quantum well depth, and strain relief layers 42 that provide strain relief to prevent dislocations from occurring due to lattice mismatches between the InGaAs layers within the channel 39 and the charge confinement layers 14,20, thereby allowing the overall thickness of the channel 39 to be at least as wide as conventional HACT devices that use a GaAs channel. The strain relief layers 42 may be narrowly sized to allow tunneling of electrons across the entire channel 39 thereby allowing the charge to move as a single group, or alternatively, widely sized to provide separate isolated channels thereby allowing the charge to move in separate groups. Both embodiments provide increased quantum well depth in the channel 39 over conventional HACT devices.
摘要翻译：具有夹在上电荷限制层14和下电荷限制层14,20之间的电荷传输通道39的异质结声电荷输送装置（HACT）具有由包含交替深阱的应变层超晶格（SLS）制成的电荷传输通道39 提供深量子阱深度的半导体层40和应变消除层42，其提供应变消除以防止由于沟道39内的InGaAs层与电荷限制层14,20之间的晶格失配而发生位错，从而允许通道39的总厚度至少与使用GaAs通道的常规HACT器件一样宽。应变消除层42的尺寸可以窄，以允许电子穿过整个通道39，从而允许电荷作为单个组移动，或者可选地被广泛地设置以提供单独的隔离通道，从而允许电荷以分开的组移动。两个实施例相对于传统的HACT装置在通道39中提供增加的量子阱深度。

6. 发明授权

US5445711A Low resistance, thermally stable electrode structure for electroluminescent displays 失效
标题翻译：用于电致发光显示器的低电阻，热稳定的电极结构
公开(公告)号：US5445711A
公开(公告)日：1995-08-29
申请号：US250969
申请日：1994-05-31
申请人： William J. Tanski , Roger Carroll , Emilio J. Branciforte
发明人： William J. Tanski , Roger Carroll , Emilio J. Branciforte
IPC分类号： H05B33/22 , H05B33/12 , H05B33/26 , H05B33/28 , B44C1/22 , C23F1/02
CPC分类号： H05B33/28
摘要： An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).
摘要翻译：电致发光显示器包括在透明电极（6）的一部分上形成的透明电极（4）和金属辅助结构（6），使得金属辅助结构（6）与透明电极（4）电接触。金属辅助结构（6）包括第一耐火金属层（10），形成在第一耐火金属层（10）上的主导体层（12）和形成在主导体层上的第二难熔金属层（14）（12）。当电致发光显示器被退火以激活磷光体层（18）时，第一和第二难熔金属层（10,14）能够保护主导体层（12）不被氧化。在替代实施例中，电致发光显示器包括基板（2）和形成在基板（2）上的金属电极（22）。金属电极（22）包括形成在第一难熔金属层（10）上的第一耐火金属层（10），主导体层（12）和形成在主导体层（10）上的第二耐火金属层（14） 12）。

7. 发明授权

US5320977A Method and apparatus for selecting the resistivity of epitaxial layers in III-V devices 失效
标题翻译：用于选择III-V器件中外延层电阻率的方法和装置
公开(公告)号：US5320977A
公开(公告)日：1994-06-14
申请号：US821239
申请日：1992-01-10
申请人： William J. Tanski , Emilio J. Branciforte
发明人： William J. Tanski , Emilio J. Branciforte
IPC分类号： H03H9/02 , H01G7/00
CPC分类号： H03H9/02976 , Y10S438/934
摘要： A novel heterostructure acoustic charge transport (HACT) device is disclosed having an optimized charge density. The device includes a transducer fabricated on a substrate structure that launches surface acoustic waves. A reflector is formed in the substrate structure at an end portion adjacent to the transducer for reflecting the surface acoustic Waves. Also included is an electrode configured with the transport channel at an end thereof distal to the transducer for generating electrical signal equivalents of the propagating electrode charge. During fabrication, the resistivity of the layers initially configured at a lower than desired value. The layer is subsequently etched to raise the resistivity to the desired value.
摘要翻译：公开了具有优化的电荷密度的新颖的异质结构声电荷传输（HACT）器件。该装置包括在发射表面声波的基板结构上制造的换能器。反射器在基板结构中在与换能器相邻的端部处形成，用于反射表面声波。还包括一个电极，其配置有在传感器远端的一端的传输通道，用于产生传播电极电荷的电信号。在制造期间，最初配置在低于期望值的层的电阻率。随后蚀刻该层以将电阻率提高到所需值。

8. 发明授权

US5559399A Low resistance, thermally stable electrode structure for electroluminescent displays 失效
公开(公告)号：US5559399A
公开(公告)日：1996-09-24
申请号：US897201
申请日：1992-06-11
申请人： William J. Tanski , Roger Carroll , Emilio J. Branciforte
发明人： William J. Tanski , Roger Carroll , Emilio J. Branciforte
IPC分类号： H05B33/22 , H05B33/12 , H05B33/26 , H05B33/28 , H01J1/62
CPC分类号： H05B33/28
摘要： An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).

9. 发明授权

US5159420A Dual medium heterojunction acoustic charge transport multiple quantum well spatial light modulator 失效
标题翻译：双介质异质结声电荷传输多量子阱空间光调制器
公开(公告)号：US5159420A
公开(公告)日：1992-10-27
申请号：US777883
申请日：1991-10-15
申请人： Thomas W. Grudkowski , Glen W. Drake , Frederick J. Leonberger , Robert N. Sacks , William J. Tanski
发明人： Thomas W. Grudkowski , Glen W. Drake , Frederick J. Leonberger , Robert N. Sacks , William J. Tanski
IPC分类号： G02F1/017 , G02F1/11
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/11
摘要： A one-dimensional or two-dimensional transmission mode spatial light modulator (SLM) includes two different mediums, one medium being a semiconductor comprising one or more heterojunction acoustic charge transport (HACT) channels 28 with surrounding layers 26, 30 vertically adjacent to a multiple quantum well (MQW) region 22, and the other being a transparent piezoelectric insulating substrate 10 thick enough to allow a surface acoustic wave (SAW) 13 to propagate therein. The SAW 13 is launched in the substrate 10 by a transducer 12 and generates electric fields which propagate the charge along the HACT channel 28 in the semiconductor medium 18. Electrodes 32, 34, 36 carry charge to and from the HACT channel 28, and light 40 is applied to a surface 44 perpendicular to the MQW region 22. Charge packets 19 in the HACT channel 28 invoke electric fields within the MQW region 22 which determines the optical absorption and/or index-of-refraction thereof, thereby determining the intensity and/or phase of each output light beam 46. Light modulation is achieved by modulating the amount of charge injected and/or the characteristics of the SAW 11. Various different materials for the substrate 10 may be used to provide desired efects.
摘要翻译：一维或二维透射模式空间光调制器（SLM）包括两种不同介质，一种介质是包括一个或多个异质结声电荷传输（HACT）通道28的半导体，其中周围层26,30垂直相邻于多个量子阱（MQW）区域22，另一个是透明压电绝缘基板10，该透明压电绝缘基板10足够厚以允许表面声波（SAW）13在其中传播。 SAW 13通过换能器12在衬底10中发射，并产生沿着半导体介质18中的HACT通道28传播电荷的电场。电极32,34,36向HCC通道28和/ 40被施加到垂直于MQW区域22的表面44.HACT通道28中的充电包19调用MQW区域22内的电场，该电场确定光学吸收和/或其折射率，由此确定强度和 /或每个输出光束的相位46.通过调制注入的电荷量和/或SAW 11的特性来实现光调制。可以使用用于衬底10的各种不同的材料来提供期望的效果。

10. 发明授权

US4884001A Monolithic electro-acoustic device having an acoustic charge transport device integrated with a transistor 失效
标题翻译：具有与晶体管集成的声电荷传输装置的单片电声装置
公开(公告)号：US4884001A
公开(公告)日：1989-11-28
申请号：US283625
申请日：1988-12-13
申请人： Robert N. Sacks , William J. Tanski
发明人： Robert N. Sacks , William J. Tanski
IPC分类号： H01L27/00 , H01L27/20 , H03H9/02 , H03H9/145 , H03H9/25
CPC分类号： H03H9/02976 , Y10T29/42
摘要： A novel heterojunction acoustic charge transport device (HACT) includes a modulation doped field effect transistor (MODFET) on the same substrate. The device is characterized by a sequence of epitaxial layers such that the MODFET is fabricated in a first portion of the uppermost layers while the HACT device is fabricated in an adjacent second portion using a partially overlapping subset of the lower layers after selected upper ones have been removed to form a single integrated electro-acoustic device.

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