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    • 4. 发明申请
    • INK JET HEAD AND METHOD OF MANUFACTURING THE INK JET HEAD
    • 喷墨头和制造喷墨头的方法
    • US20120229579A1
    • 2012-09-13
    • US13409317
    • 2012-03-01
    • Hiroyuki KushidaNobuaki Murochi
    • Hiroyuki KushidaNobuaki Murochi
    • B41J2/045H01L41/24
    • B41J2/14209B41J2/1609B41J2/162B41J2/1623B41J2/1632B41J2/1634
    • According to one embodiment, an ink jet head includes: a nozzle plate including plural nozzles; a piezoelectric element including plural pressure chambers corresponding to the nozzles and sidewalls provided adjacent to the pressure chambers and functioning as driving elements that press the pressure chambers to eject liquid from the nozzles; a substrate to which the piezoelectric element is bonded; a frame member placed on the substrate to surround the piezoelectric element; and electrodes for driving the piezoelectric element. The piezoelectric element includes slopes continuous to the upper end of the piezoelectric element and not in contact with the nozzle plate. The substrate has a surface layer formed on the surface thereof and includes recess continuous to the slopes in the surface layer. The electrodes are formed on the slopes and the recess.
    • 根据一个实施例,喷墨头包括:包括多个喷嘴的喷嘴板; 压电元件,包括与喷嘴相对应的多个压力室和邻近压力室设置的侧壁,并且用作按压压力室以从喷嘴喷出液体的驱动元件; 键合有压电元件的基板; 放置在所述基板上以围绕所述压电元件的框架构件; 以及用于驱动压电元件的电极。 压电元件包括​​与压电元件的上端连续并且不与喷嘴板接触的斜面。 基板的表面形成有表层,并且包括与表面层中的斜面连续的凹部。 电极形成在斜面和凹部上。
    • 6. 发明申请
    • DRY ETCHING APPARATUS AND METHOD OF DRY ETCHING
    • 干蚀刻设备和干蚀刻方法
    • US20110303635A1
    • 2011-12-15
    • US13157470
    • 2011-06-10
    • Shuji TAKAHASHI
    • Shuji TAKAHASHI
    • H01L41/24C23F1/08
    • H01J37/32972H01J37/32082H01J37/32165H01J37/32174H01J37/32183H01J37/3299
    • A dry etching apparatus includes: a vacuum chamber which includes therein a stage on which a member to be etched is mounted; a process gas supply device which supplies a process gas into the vacuum chamber; a plasma generating device which includes an electrode for generating a plasma in the vacuum chamber; a plasma generating power source which supplies high-frequency power for plasma generation to the electrode of the plasma generating device; a bias power source which is a single bias power source for controlling a self-bias potential of the stage and from which output frequency is variable; a matching box which is a single matching box connected electrically between the stage and the bias power source and which matches impedances between a load of the bias power source and the bias power source; a frequency setting device which sets an output frequency of the bias power source; and a control device which controls an impedance of the matching box according to the set output frequency of the bias power source.
    • 干蚀刻装置包括:真空室,其中包括安装待蚀刻部件的台阶; 处理气体供给装置,其将处理气体供给到真空室中; 等离子体产生装置,其包括用于在真空室中产生等离子体的电极; 等离子体发生电源,其将等离子体产生的高频电力提供给等离子体发生装置的电极; 偏置电源,其是用于控制级的自偏置电位并且输出频率可变的单个偏置电源; 匹配箱,其是在所述级和所述偏置电源之间电连接并匹配所述偏置电源的负载与所述偏置电源之间的阻抗的单个匹配盒; 频率设定装置,其设定偏置电源的输出频率; 以及控制装置,其根据偏置电源的设定输出频率来控制匹配盒的阻抗。