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1. 发明授权

US10009008B2 Bulk acoustic wave (BAW) device having roughened bottom side 有权
公开(公告)号：US10009008B2
公开(公告)日：2018-06-26
申请号：US15291230
申请日：2016-10-12
申请人： Texas Instruments Incorporated
发明人： Stuart M. Jacobsen , Brian Goodlin
IPC分类号： H03H9/17 , H01L41/08 , H01L41/047 , H03B28/00 , H03H9/02 , H03B5/32 , H03H9/13
CPC分类号： H03H9/17 , H01L41/047 , H01L41/0805 , H03B5/326 , H03B28/00 , H03B2200/0022 , H03H9/02055 , H03H9/131 , H03H9/175
摘要： A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 μm root mean square (RMS).

2. 发明申请

US20170250633A1 TRANSMITTING DEVICE AND METHOD FOR WIRELESS TRANSMISSION OF MEASURED PARAMETERS 审中-公开
公开(公告)号：US20170250633A1
公开(公告)日：2017-08-31
申请号：US15512032
申请日：2014-09-17
申请人： STE INDUSTRIES S.R.L.
发明人： Paolo Maria MOIRAGHI , Mauro CORTESE
IPC分类号： H02P6/16 , H03B5/32 , H03L7/16 , B60C23/04
CPC分类号： H02P6/16 , B60C23/0447 , B60C23/0454 , B60C23/0457 , B60C23/0493 , H03B5/326 , H03L7/16
摘要： A transmitting device for wireless transmission of measured parameters comprising a microcontroller and pulse generating elements connected to the microcontroller, the microcontroller being configured to receive at least one detection signal representative of at least one measured parameter value and being also configured to control the pulse generating elements so that the pulse generating elements generate at least one pulse position modulation (PPM) signal comprising information corresponding to the at least one measured parameter value, the transmitting device further comprising or being connectable to an antenna for the wireless transmission of the PPM signal, the pulse generating elements comprising an oscillator and a power amplifier connected to the oscillator in order to amplify the pulses output from the oscillator and to output the PPM signal.

3. 发明申请

US20170194908A1 VARIABLE GAIN ELECTRO-MECHANICAL OSCILLATOR AND METHOD FOR STARTING BALANCED OSCILLATIONS 审中-公开
公开(公告)号：US20170194908A1
公开(公告)日：2017-07-06
申请号：US15369490
申请日：2016-12-05
申请人： Srinivasa Rao Madala , Hormoz Djahanshahi , Bharath Kumar Singareddy , Stanley Ho
发明人： Srinivasa Rao Madala , Hormoz Djahanshahi , Bharath Kumar Singareddy , Stanley Ho
IPC分类号： H03B5/32 , H03B5/12
CPC分类号： H03B5/32 , H03B5/1212 , H03B5/326 , H03B5/368 , H03B2200/0012 , H03B2200/009
摘要： Methods and systems are provided for generating balanced oscillations in oscillators. An oscillator comprises a resonator input configured to receive, from an electro-mechanical resonator, a resonator signal; and an oscillator core comprising a first and a second complementary inverters forming a first loop and a second loop with the resonator input, respectively. The inverters are programmable to contribute to the resonator signal a first gain or a second gain to generate balanced oscillations in the oscillator, with the first gain being less than an upper threshold gain required to generate parasitic-mode oscillations when starting balanced oscillations, and the second gain being equal to or greater than a lower threshold, gain required to generate resonator-mode oscillations. Each inverter is configured to regulate gain contributed by the inventor based on regulating amount of power received to control the gain.

4. 发明授权

US09391560B2 Semiconductor integrated circuit, oscillator, electronic apparatus, and moving object 有权
标题翻译：半导体集成电路，振荡器，电子设备和移动物体
公开(公告)号：US09391560B2
公开(公告)日：2016-07-12
申请号：US14689404
申请日：2015-04-17
申请人： Seiko Epson Corporation
发明人： Yuichi Takebayashi , Mikio Shigemori , Takuya Owaki , Kunihito Yamanaka
IPC分类号： H03B5/32 , H03B19/00 , G06F1/06 , G06F1/08 , G06F1/10
CPC分类号： H03B5/326 , G06F1/06 , G06F1/08 , G06F1/10 , H03B19/00
摘要： A semiconductor integrated circuit includes a semiconductor substrate on which an oscillation circuit that generates an oscillation signal by oscillating a resonation element, and a plurality of output circuits that outputs signals based on the oscillation signal, are integrated. A package contains the semiconductor integrated circuit and the resonation element. In the semiconductor integrated circuit, an operation of a first output circuit and an operation of a second output circuit, among a plurality of output circuits, are controlled independently from each other.
摘要翻译：半导体集成电路包括半导体衬底，其上通过振荡谐振元件产生振荡信号的振荡电路和基于振荡信号输出信号的多个输出电路被集成。封装包含半导体集成电路和谐振元件。在半导体集成电路中，多个输出电路中的第一输出电路的动作和第二输出电路的动作被彼此独立地控制。

5. 发明申请

US20150318461A1 BULK ACOUSTIC WAVE (BAW) DEVICE HAVING ROUGHENED BOTTOM SIDE 有权
标题翻译：带有粗糙底边的BULK ACOUSTIC WAVE（BAW）装置
公开(公告)号：US20150318461A1
公开(公告)日：2015-11-05
申请号：US14692481
申请日：2015-04-21
申请人： Texas Instruments Incorporated
发明人： STUART M. JACOBSEN , BRIAN GOODLIN
IPC分类号： H01L41/08 , H03B28/00 , H01L41/047
CPC分类号： H03H9/17 , H01L41/047 , H01L41/0805 , H03B5/326 , H03B28/00 , H03B2200/0022 , H03H9/02055 , H03H9/131 , H03H9/175
摘要： A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 μm root mean square (RMS).
摘要翻译：体声波（BAW）谐振器包括具有顶侧表面和底侧表面的基底。布拉格反射镜位于基板的顶侧表面。底部电极层位于布拉格反射镜上，压电层位于底部电极层上。顶部电介质层位于压电层上，顶部电极层位于顶部电介质层上。基板的底面具有至少1μm的均方根（RMS）的表面粗糙度。

6. 发明申请

US20150303872A1 SEMICONDUCTOR INTEGRATED CIRCUIT, OSCILLATOR, ELECTRONIC APPARATUS, AND MOVING OBJECT 有权
标题翻译：半导体集成电路，振荡器，电子设备和移动对象
公开(公告)号：US20150303872A1
公开(公告)日：2015-10-22
申请号：US14689404
申请日：2015-04-17
申请人： Seiko Epson Corporation
发明人： Yuichi TAKEBAYASHI , Mikio SHIGEMORI , Takuya OWAKI , Kunihito YAMANAKA
IPC分类号： H03B5/32
CPC分类号： H03B5/326 , G06F1/06 , G06F1/08 , G06F1/10 , H03B19/00
摘要： A semiconductor integrated circuit includes a semiconductor substrate on which an oscillation circuit that generates an oscillation signal by oscillating a resonation element, and a plurality of output circuits that outputs signals based on the oscillation signal, are integrated. A package contains the semiconductor integrated circuit and the resonation element. In the semiconductor integrated circuit, an operation of a first output circuit and an operation of a second output circuit, among a plurality of output circuits, are controlled independently from each other.
摘要翻译：半导体集成电路包括半导体衬底，其上通过振荡谐振元件产生振荡信号的振荡电路和基于振荡信号输出信号的多个输出电路被集成。封装包含半导体集成电路和谐振元件。在半导体集成电路中，多个输出电路中的第一输出电路的动作和第二输出电路的动作被彼此独立地控制。

7. 发明授权

US09088263B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子设备
公开(公告)号：US09088263B2
公开(公告)日：2015-07-21
申请号：US13162162
申请日：2011-06-16
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/25 , H03H9/125 , H03B5/32 , H03H9/02 , H03H9/00
CPC分类号： H03H9/02551 , H03B5/326 , H03H9/02653 , H03H9/02661 , H03H9/02669 , H03H9/02677 , H03H9/64 , H03H2009/0019
摘要： A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°); one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is λ, and a depth of the grooves is G, “0.01λ≦G” is satisfied.
摘要翻译：提供表面声波（SAW）谐振器和SAW振荡器以及包括谐振器的电子设备。一种SAW谐振器包括：使用欧拉角（-1.5°＆amp; nlE; 1.5°，117°＆nlE;＆amp; Thetas;＆nlE; 142°，42.79°＆nlE; |ψ|＆nlE的石英晶体基板激励SAW的IDT ; 49.57°）; 一对反射单元布置成允许IDT设置在其间; 以及通过按压位于电极指之间的石英晶体衬底获得的凹槽。当SAW的波长为λ，凹槽的深度为G时，满足“0.01λ＆nlE; G”。

8. 发明申请

US20140125422A1 SELF-OSCILLATION CIRCUIT 审中-公开
标题翻译：自振荡电路
公开(公告)号：US20140125422A1
公开(公告)日：2014-05-08
申请号：US14072807
申请日：2013-11-06
申请人： NIHON DEMPA KOGYO CO., LTD.
发明人： MITSUAKI KOYAMA , TAKERU MUTOH , MANABU ISHIKAWA
IPC分类号： H03B5/36
CPC分类号： H03B5/362 , H03B5/326 , H03B2201/02
摘要： A self-oscillation circuit includes an oscillating unit, an amplifying unit, and a resonator. The oscillating unit is configured to self-oscillate. The amplifying unit is configured to amplify a frequency signal oscillated at the oscillating unit and to feed back the amplified frequency signal to the oscillating unit. The resonator is disposed in an oscillation loop that includes the oscillating unit and the amplifying unit. The resonator has a resonant frequency near an oscillation frequency of the oscillating unit and has a higher Q-value than a Q-value of the oscillating unit.
摘要翻译：自振荡电路包括振荡单元，放大单元和谐振器。振荡单元被配置为自振荡。放大单元被配置为放大在振荡单元处振荡的频率信号，并将放大的频率信号反馈到振荡单元。谐振器设置在包括振荡单元和放大单元的振荡环路中。谐振器具有接近振荡单元的振荡频率的谐振频率，并且具有比振荡单元的Q值更高的Q值。

9. 发明授权

US08648431B2 Acoustic semiconductor device 失效
标题翻译：声学半导体器件
公开(公告)号：US08648431B2
公开(公告)日：2014-02-11
申请号：US13220116
申请日：2011-08-29
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L29/84
CPC分类号： H03J3/20 , H03B5/326 , H03H9/02566
摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
摘要翻译：根据一个实施例，声学半导体器件包括元件单元和第一端子。元件单元包括声共振单元。声共振单元包括半导体晶体。声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。第一端子电连接到元件单元。从输出和输入电信号中选出的至少一个可经由第一终端实现。电信号与电荷密度耦合。输出电信号来自声共振单元，并且输入电信号进入声共振单元。

10. 发明申请

US20120212301A1 SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC INSTRUMENT 审中-公开
标题翻译：表面声波谐振器，表面声波振荡器和电子仪器
公开(公告)号：US20120212301A1
公开(公告)日：2012-08-23
申请号：US13460149
申请日：2012-04-30
申请人： Kunihito YAMANAKA
发明人： Kunihito YAMANAKA
IPC分类号： H03B5/32 , H02N1/00
CPC分类号： H03H9/25 , H03B5/326 , H03H9/02551 , H03H9/0296 , H03H9/02992 , H03H9/14538 , H03H9/14594
摘要： A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 41.9°≦|ψ|≦49.57°), includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is λ, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is η, and an electrode film thickness of the IDT is H, λ, G, η and H satisfy the relationship of 0
摘要翻译：一种SAW谐振器，其使用具有欧拉角（-1.5°＆nlE;＆amp;＆ll; 1.5°，117°＆nlE;＆Thetas;＆nlE; 142°和41.9°＆nlE; |ψ|＆nlE; 49.57°）的石英晶体衬底包括激励停止带上端模式SAW的IDT以及设置在构成IDT的电极指之间的电极间槽指槽。当SAW的波长为λ时，电极指槽的第一深度为G，IDT的线占有率为eEgr，IDT的电极膜厚度为H，λ，G，eegr; 和H满足0

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