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1. 发明授权

US4893161A Quantum-well acoustic charge transport device 失效
标题翻译：量子阱声电荷传输装置
公开(公告)号：US4893161A
公开(公告)日：1990-01-09
申请号：US100795
申请日：1987-09-24
申请人： William J. Tanski , Sears W. Merritt , Robert N. Sacks
发明人： William J. Tanski , Sears W. Merritt , Robert N. Sacks
IPC分类号： H01L29/737 , H03H9/02
CPC分类号： H01L29/7371 , H03H9/02976
摘要： An improved acoustic charge transport device having an acoustic wave passing through a piezoelectric semiconductor is improved by utilizing heterostructure Quantum-wells for confining charge packets.
摘要翻译：具有通过压电半导体的声波的改进的声电荷传输装置通过利用用于限制电荷分组的异质结构量子阱来改进。

2. 发明授权

US5128734A Surface channel hact 失效
标题翻译：表面通道
公开(公告)号：US5128734A
公开(公告)日：1992-07-07
申请号：US591656
申请日：1990-10-02
申请人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte , Robert N. Sacks , Roger D. Carroll
发明人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte , Robert N. Sacks , Roger D. Carroll
IPC分类号： H01L29/765 , H03H9/02
CPC分类号： H01L29/765 , H03H9/02976
摘要： A simplified heterostructure charge transport device has a GaAs transport layer that is the top layer of the device, deposited on an (Al,Ga) As barrier layer for vertical confinement of charge packets. Confinement at the top surface is provided by pinning of the conduction band surface states.
摘要翻译：简化的异质结电荷传输器件具有作为器件顶层的GaAs传输层，其沉积在用于垂直限制电荷包的（Al，Ga）As阻挡层上。顶表面的限制是通过固定导带表面状态来提供的。

3. 发明授权

US4980596A Acoustic charge transport device having direct optical input 失效
标题翻译：具有直接光输入的声电荷传输装置
公开(公告)号：US4980596A
公开(公告)日：1990-12-25
申请号：US283618
申请日：1988-12-13
申请人： Robert N. Sacks , Sears W. Merritt
发明人： Robert N. Sacks , Sears W. Merritt
IPC分类号： H01L41/08 , H03H9/02
CPC分类号： H03H9/02976
摘要： A novel heterostructure acoustic charge transport (HACT) device is capable of direct optical modulation. The device includes a transducer fabricated on a substrate structure that launches surface acoustic waves. A reflector is formed in the substrate structure at an end portion adjacent to the transducer for reflecting the surface acoustic waves. Also included is an electrode configured with the transport channel at an end thereof distal to the transducer for generating electrical signal equivalents of the propagating electrode charge. The device is characterized by a transport channel with an intrinsic vertical electrical potential such that electron-hole pairs created by incident electromagnetic radiation are separated from one another before recombination, with electrical charges therefrom provided to the surface acoustic waves.

4. 发明授权

US4926083A Optically modulated acoustic charge transport device 失效
标题翻译：光调制声电荷传输装置
公开(公告)号：US4926083A
公开(公告)日：1990-05-15
申请号：US283624
申请日：1988-12-13
申请人： Sears W. Merritt , Robert N. Sacks , Arthur G. Foyt
发明人： Sears W. Merritt , Robert N. Sacks , Arthur G. Foyt
IPC分类号： H01L27/14 , H01L21/339 , H01L27/20 , H01L29/762 , H03H9/02
CPC分类号： H01L27/20 , H03H9/02968
摘要： A novel heterojunction acoustic charge transport device includes a transducer fabricated on a GaAs/AlGaAs heterojunction material that launches surface acoustic waver (SAW) along a transport channel. The device is characterized by a photodiode configured adjacent to the channel on the substrate to receive a modulated optical beam. An electrical signal equivalent is provided to a Schottky electrode at the end of the transport channel modulating the charge propagated by the surface acoustic wave. The modulated signal is output at a distal end of the transport channel.

5. 发明授权

US5159420A Dual medium heterojunction acoustic charge transport multiple quantum well spatial light modulator 失效
标题翻译：双介质异质结声电荷传输多量子阱空间光调制器
公开(公告)号：US5159420A
公开(公告)日：1992-10-27
申请号：US777883
申请日：1991-10-15
申请人： Thomas W. Grudkowski , Glen W. Drake , Frederick J. Leonberger , Robert N. Sacks , William J. Tanski
发明人： Thomas W. Grudkowski , Glen W. Drake , Frederick J. Leonberger , Robert N. Sacks , William J. Tanski
IPC分类号： G02F1/017 , G02F1/11
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/11
摘要： A one-dimensional or two-dimensional transmission mode spatial light modulator (SLM) includes two different mediums, one medium being a semiconductor comprising one or more heterojunction acoustic charge transport (HACT) channels 28 with surrounding layers 26, 30 vertically adjacent to a multiple quantum well (MQW) region 22, and the other being a transparent piezoelectric insulating substrate 10 thick enough to allow a surface acoustic wave (SAW) 13 to propagate therein. The SAW 13 is launched in the substrate 10 by a transducer 12 and generates electric fields which propagate the charge along the HACT channel 28 in the semiconductor medium 18. Electrodes 32, 34, 36 carry charge to and from the HACT channel 28, and light 40 is applied to a surface 44 perpendicular to the MQW region 22. Charge packets 19 in the HACT channel 28 invoke electric fields within the MQW region 22 which determines the optical absorption and/or index-of-refraction thereof, thereby determining the intensity and/or phase of each output light beam 46. Light modulation is achieved by modulating the amount of charge injected and/or the characteristics of the SAW 11. Various different materials for the substrate 10 may be used to provide desired efects.
摘要翻译：一维或二维透射模式空间光调制器（SLM）包括两种不同介质，一种介质是包括一个或多个异质结声电荷传输（HACT）通道28的半导体，其中周围层26,30垂直相邻于多个量子阱（MQW）区域22，另一个是透明压电绝缘基板10，该透明压电绝缘基板10足够厚以允许表面声波（SAW）13在其中传播。 SAW 13通过换能器12在衬底10中发射，并产生沿着半导体介质18中的HACT通道28传播电荷的电场。电极32,34,36向HCC通道28和/ 40被施加到垂直于MQW区域22的表面44.HACT通道28中的充电包19调用MQW区域22内的电场，该电场确定光学吸收和/或其折射率，由此确定强度和 /或每个输出光束的相位46.通过调制注入的电荷量和/或SAW 11的特性来实现光调制。可以使用用于衬底10的各种不同的材料来提供期望的效果。

6. 发明授权

US4884001A Monolithic electro-acoustic device having an acoustic charge transport device integrated with a transistor 失效
标题翻译：具有与晶体管集成的声电荷传输装置的单片电声装置
公开(公告)号：US4884001A
公开(公告)日：1989-11-28
申请号：US283625
申请日：1988-12-13
申请人： Robert N. Sacks , William J. Tanski
发明人： Robert N. Sacks , William J. Tanski
IPC分类号： H01L27/00 , H01L27/20 , H03H9/02 , H03H9/145 , H03H9/25
CPC分类号： H03H9/02976 , Y10T29/42
摘要： A novel heterojunction acoustic charge transport device (HACT) includes a modulation doped field effect transistor (MODFET) on the same substrate. The device is characterized by a sequence of epitaxial layers such that the MODFET is fabricated in a first portion of the uppermost layers while the HACT device is fabricated in an adjacent second portion using a partially overlapping subset of the lower layers after selected upper ones have been removed to form a single integrated electro-acoustic device.

7. 发明授权

US5298772A Integrated heterostructure acoustic charge transport (HACT) and heterostructure insulated gate field effects transistor (HIGFET) devices 失效
标题翻译：集成异质结构声电荷传输（HACT）和异质结构绝缘栅场效应晶体管（HIGFET）器件
公开(公告)号：US5298772A
公开(公告)日：1994-03-29
申请号：US843470
申请日：1992-02-28
申请人： Andrzej Peczalski , David E. Grider , James F. Detry , George A. Kilgore , William J. Tanski , Thomas W. Grudkowski , Robert N. Sacks
发明人： Andrzej Peczalski , David E. Grider , James F. Detry , George A. Kilgore , William J. Tanski , Thomas W. Grudkowski , Robert N. Sacks
IPC分类号： H01L27/06 , H03H9/02 , H01L41/08 , H01L29/84
CPC分类号： H03H9/02976 , H01L27/0605
摘要： A monolithic integrated circuit device combines integrated heterostructure acoustic charge transport (HACT) devices and heterostructure insulated gate field effect transistor (HIGFET) devices in a single structure in which the HACT and HIGFET layers are grown in as a contiguous composite heterostructure.
摘要翻译：单片集成电路器件将集成的异质结构声电荷传输（HACT）器件和异质结构绝缘栅场效应晶体管（HIGFET）器件结合在一起，其中HACT和HIGFET层作为连续的复合异质结构生长。

8. 发明授权

US5283444A Increased well depth hact using a strained layer superlattice 失效
标题翻译：使用应变层超晶格增加深度深度
公开(公告)号：US5283444A
公开(公告)日：1994-02-01
申请号：US918830
申请日：1992-07-24
申请人： Robert N. Sacks , Thomas W. Grudkowski , Donald E. Cullen , William J. Tanski
发明人： Robert N. Sacks , Thomas W. Grudkowski , Donald E. Cullen , William J. Tanski
IPC分类号： H01L29/15 , H03H9/02 , H01L29/161 , H01L29/205
CPC分类号： H03H9/02976 , H01L29/155
摘要： A heterojunction acoustic charge transport device (HACT) having a charge transport channel 39 which is sandwiched between upper and lower charge confinement layers, 14,20, has the charge transport channel 39 made of a Strained Layer Superlattice (SLS) comprising alternating deep-well semiconductor layers 40, that provide a deep quantum well depth, and strain relief layers 42 that provide strain relief to prevent dislocations from occurring due to lattice mismatches between the InGaAs layers within the channel 39 and the charge confinement layers 14,20, thereby allowing the overall thickness of the channel 39 to be at least as wide as conventional HACT devices that use a GaAs channel. The strain relief layers 42 may be narrowly sized to allow tunneling of electrons across the entire channel 39 thereby allowing the charge to move as a single group, or alternatively, widely sized to provide separate isolated channels thereby allowing the charge to move in separate groups. Both embodiments provide increased quantum well depth in the channel 39 over conventional HACT devices.
摘要翻译：具有夹在上电荷限制层14和下电荷限制层14,20之间的电荷传输通道39的异质结声电荷输送装置（HACT）具有由包含交替深阱的应变层超晶格（SLS）制成的电荷传输通道39 提供深量子阱深度的半导体层40和应变消除层42，其提供应变消除以防止由于沟道39内的InGaAs层与电荷限制层14,20之间的晶格失配而发生位错，从而允许通道39的总厚度至少与使用GaAs通道的常规HACT器件一样宽。应变消除层42的尺寸可以窄，以允许电子穿过整个通道39，从而允许电荷作为单个组移动，或者可选地被广泛地设置以提供单独的隔离通道，从而允许电荷以分开的组移动。两个实施例相对于传统的HACT装置在通道39中提供增加的量子阱深度。

9. 发明授权

US5264717A HACT structure with reduced surface state effects 失效
标题翻译： HACT结构具有降低的表面状态效应
公开(公告)号：US5264717A
公开(公告)日：1993-11-23
申请号：US894141
申请日：1992-06-04
申请人： Thomas W. Grudkowski , Robert N. Sacks
发明人： Thomas W. Grudkowski , Robert N. Sacks
IPC分类号： H01L29/205 , H01L29/765 , H03H9/02 , H01L29/161 , H01L29/84 , H01L29/96
CPC分类号： H03H9/02976 , H01L29/205 , H01L29/765
摘要： A heterojunction acoustic charge transport (HACT) device having a charge transport layer 16 surrounded by upper and lower charge confinement layers 14,30, respectively, and having a cap layer 36 at the outer surface, above the upper confinement layer 30, is provided with a P-N junction to minimize the effects of surface states. An intermediate layer 34 is disposed between the cap layer 36 and upper charge confinement layer 30. The upper confinement layer 30 and intermediate layer 34 are doped with opposite polarities to provide a P-N junction which creates a built-in electric field having sufficient strength to keep mobile charge carriers, transported by a SAW along the charge transport channel, from being trapped by or recombined with surface states at the external interface of the cap layer 36. Alternatively, the intermediate layer is not present and a cap layer 42 is doped to provide one side of the P-N junction.
摘要翻译：具有分别由上部和下部电荷限制层14,30围绕的电荷传输层16的异质结声电荷传输（HACT）器件，并且在上限制层30上方在外表面具有覆盖层36，具有盖层36。 PN结以最小化表面状态的影响。中间层34设置在盖层36和上电荷限制层30之间。上约束层30和中间层34以相反的极性掺杂以提供PN结，其产生具有足够强度的内置电场以保持通过SAW沿着电荷传输通道传输的移动电荷载流子在盖层36的外部界面处被捕获或与表面状态重新组合。或者，中间层不存在并且覆盖层42被掺杂以提供 PN结的一侧。

10. 发明授权

US09136419B2 Photoconductive device 有权
标题翻译：感光元件
公开(公告)号：US09136419B2
公开(公告)日：2015-09-15
申请号：US11718959
申请日：2005-12-07
申请人： Robert N. Sacks , Matthew M. Jazwiecki , Steven Williamson
发明人： Robert N. Sacks , Matthew M. Jazwiecki , Steven Williamson
IPC分类号： H01L31/09 , H01L31/0304 , H01L29/737
CPC分类号： H01L31/09 , H01L29/7371 , H01L31/03046
摘要： A semiconductor structure includes a GaAs or InP substrate, an InxGa1-xAs epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the InxGa1-xAs epitaxial layer.
摘要翻译：半导体结构包括GaAs或InP衬底，在衬底上生长的In x Ga 1-x As外延层，其中x大于约0.01且小于约0.53，并且在In x Ga 1的顶部上生长为盖层的较宽带隙外延层 -xAs外延层。

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