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1. 发明授权

US09340445B2 Optical fibers produced in microgravity environments and method of production 有权
标题翻译：在微重力环境中生产的光纤和生产方法
公开(公告)号：US09340445B2
公开(公告)日：2016-05-17
申请号：US13840987
申请日：2013-03-15
申请人： Richard L. Glover , William F. Seng
发明人： Richard L. Glover , William F. Seng
IPC分类号： G02B6/02 , G02B6/00 , C03B37/023 , C03B37/014 , F27B1/26 , F27B1/28 , C03B37/025 , C03B37/012 , C03B37/03 , C03B37/029 , C03C13/04 , C03C25/10 , C03B37/027
CPC分类号： C03B37/0253 , C03B37/01211 , C03B37/0126 , C03B37/027 , C03B37/029 , C03B37/032 , C03B2201/78 , C03B2201/82 , C03B2201/86 , C03B2205/00 , C03B2205/30 , C03B2205/40 , C03C13/04 , C03C13/042 , C03C13/043 , C03C25/106 , C03C2218/32 , G02B6/00 , G02B6/02
摘要： Optical fibers with previously unattainable characteristics and the method of producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to produce ZBLAN, Indium Fluoride, Germanate and Chalcogenide optical fibers and other similar optical fibers in a microgravity environment. The resulting optical fibers have unique molecular structures not attainable when optical fibers with the identical chemical composition are produced in a standard 1 gravity environment.The method of the invention requires a novel draw tower and modified preform, which are specifically designed to operate in microgravity environments. A lead wire is inserted into the preform that, when wound onto a spool in the draw tower, causes a fiber to form. The pull rate of the lead wire controls the diameter of the fiber.
摘要翻译：具有先前无法实现的特性的光纤及其制造方法在此公开和要求保护。具体地，本申请公开了一种在微重力环境中生产ZBLAN，氟化铟，德国酸盐和硫族化物光纤和其他类似光纤的方法。当在标准1重力环境中产生具有相同化学成分的光纤时，所得到的光纤具有不可获得的独特的分子结构。本发明的方法需要一种新颖的拉制塔和改进的预制件，其被专门设计成在微重力环境中操作。将引线插入预成型件中，当将其引导到拉制塔中的线轴上时，导致形成纤维。引线的拉伸速度控制纤维的直径。

2. 发明申请

US20150266767A1 Optical Fibers Produced in Microgravity Environments and Method of Production 有权
标题翻译：微重力环境中生产的光纤和生产方法
公开(公告)号：US20150266767A1
公开(公告)日：2015-09-24
申请号：US13840987
申请日：2013-03-15
申请人： Richard L. Glover , William F. Seng
发明人： Richard L. Glover , William F. Seng
IPC分类号： C03B37/025 , G02B1/00 , C03C25/10 , C03B37/012 , C03B37/026 , C03B37/03 , G02B6/02 , C03C13/04
CPC分类号： C03B37/0253 , C03B37/01211 , C03B37/0126 , C03B37/027 , C03B37/029 , C03B37/032 , C03B2201/78 , C03B2201/82 , C03B2201/86 , C03B2205/00 , C03B2205/30 , C03B2205/40 , C03C13/04 , C03C13/042 , C03C13/043 , C03C25/106 , C03C2218/32 , G02B6/00 , G02B6/02
摘要： Optical fibers with previously unattainable characteristics and the method of producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to produce ZBLAN, Indium Fluoride, Germanate and Chalcogenide optical fibers and other similar optical fibers in a microgravity environment. The resulting optical fibers have unique molecular structures not attainable when optical fibers with the identical chemical composition are produced in a standard 1 gravity environment.The method of the invention requires a novel draw tower and modified preform, which are specifically designed to operate in microgravity environments. A lead wire is inserted into the preform that, when wound onto a spool in the draw tower, causes a fiber to form. The pull rate of the lead wire controls the diameter of the fiber.
摘要翻译：具有先前无法实现的特性的光纤及其制造方法在此公开和要求保护。具体地，本申请公开了一种在微重力环境中生产ZBLAN，氟化铟，德国酸盐和硫族化物光纤和其他类似光纤的方法。当在标准1重力环境中产生具有相同化学成分的光纤时，所得到的光纤具有不可获得的独特的分子结构。本发明的方法需要一种新颖的拉制塔和改进的预制件，其被专门设计成在微重力环境中操作。将引线插入预成型件中，当将其引导到拉制塔中的线轴上时，导致形成纤维。引线的拉伸速度控制纤维的直径。

3. 发明申请

US20140353682A1 Wide Band Gap Semiconductor Wafers Grown and processed in a Microgravity Environment and Method of Production 审中-公开
标题翻译：宽带隙半导体晶片在微重力环境和生产方法中生长和加工
公开(公告)号：US20140353682A1
公开(公告)日：2014-12-04
申请号：US13904918
申请日：2013-05-29
申请人： William F. Seng , Richard L. Glover
发明人： William F. Seng , Richard L. Glover
IPC分类号： C30B30/08 , C30B9/00 , C30B7/00 , H01L21/02 , H01L29/16
CPC分类号： C30B30/08 , C30B9/10 , C30B19/02 , C30B19/10 , C30B29/36 , C30B29/40 , C30B33/02 , H01L21/0237 , H01L21/02378 , H01L21/02529 , H01L21/02546 , H01L21/02625 , H01L21/02628 , H01L29/1075 , H01L29/1608 , H01L29/2003 , H01L29/66053 , H01L29/872
摘要： Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.
摘要翻译：具有先前无法实现的特性的宽带隙半导体晶片及其加工和制造方法在此公开和要求保护。具体地，该申请公开了一种在微重力环境中处理碳化硅和其它类似的宽带隙半导体的方法。将晶片放置在可堆叠的容纳系统上，其在每个晶片之间产生适当的间隙，以允许均匀的加热和加工。当在标准1重力环境中产生具有相同化学成分的宽带隙半导体时，所得到的宽带隙半导体具有不可获得的独特的分子结构。

4. 发明授权

US09041010B2 Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production 有权
标题翻译：在微重力环境中生长和加工的宽带隙半导体晶片和生产方法
公开(公告)号：US09041010B2
公开(公告)日：2015-05-26
申请号：US13904918
申请日：2013-05-29
申请人： William F. Seng , Richard L. Glover
发明人： William F. Seng , Richard L. Glover
IPC分类号： H01L21/02 , H01L29/20 , H01L29/66 , H01L29/16 , H01L29/40 , C30B30/08 , C30B9/10 , C30B19/02 , C30B19/10 , C30B29/36 , C30B33/02 , H01L29/10 , C30B29/40 , H01L29/872
CPC分类号： C30B30/08 , C30B9/10 , C30B19/02 , C30B19/10 , C30B29/36 , C30B29/40 , C30B33/02 , H01L21/0237 , H01L21/02378 , H01L21/02529 , H01L21/02546 , H01L21/02625 , H01L21/02628 , H01L29/1075 , H01L29/1608 , H01L29/2003 , H01L29/66053 , H01L29/872
摘要： Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.
摘要翻译：具有先前无法实现的特性的宽带隙半导体晶片及其加工和制造方法在此公开和要求保护。具体地，该申请公开了一种在微重力环境中处理碳化硅和其它类似宽带隙半导体的方法。将晶片放置在可堆叠的容纳系统上，其在每个晶片之间产生适当的间隙，以允许均匀的加热和加工。当在标准1重力环境中产生具有相同化学成分的宽带隙半导体时，所得到的宽带隙半导体具有不可获得的独特的分子结构。

5. 发明申请

US20080227275A1 METHOD AND DEVICE WITH DURABLE CONTACT ON SILICON CARBIDE 有权
标题翻译：在碳化硅上具有耐久接触的方法和装置
公开(公告)号：US20080227275A1
公开(公告)日：2008-09-18
申请号：US12106646
申请日：2008-04-21
申请人： William F. Seng , Richard L. Woodin , Carl Anthony Witt
发明人： William F. Seng , Richard L. Woodin , Carl Anthony Witt
IPC分类号： H01L21/329
CPC分类号： H01L21/0495 , H01L29/1608 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/812 , H01L29/872 , Y10S438/931
摘要： A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
摘要翻译：肖特基势垒碳化硅器件具有肖特基金属触点。 Re触点27厚于250埃，可以在2000和4000埃之间。通过离子铣削肖特基接触周围的环形区域提供端接结构。

6. 发明授权

US07411218B2 Method and device with durable contact on silicon carbide 有权
标题翻译：在碳化硅上具有耐久接触的方法和装置
公开(公告)号：US07411218B2
公开(公告)日：2008-08-12
申请号：US11083560
申请日：2005-03-18
申请人： William F. Seng , Richard L. Woodin , Carl Anthony Witt
发明人： William F. Seng , Richard L. Woodin , Carl Anthony Witt
IPC分类号： H01L29/15
CPC分类号： H01L21/0495 , H01L29/1608 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/812 , H01L29/872 , Y10S438/931
摘要： A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
摘要翻译：肖特基势垒碳化硅器件具有肖特基金属触点。 Re触点27厚于250埃，可以在2000和4000埃之间。通过离子铣削肖特基接触周围的环形区域提供端接结构。

7. 发明授权

US06955978B1 Uniform contact 失效
公开(公告)号：US06955978B1
公开(公告)日：2005-10-18
申请号：US10029101
申请日：2001-12-20
申请人： Richard L. Woodin , William F. Seng
发明人： Richard L. Woodin , William F. Seng
IPC分类号： H01L21/28 , H01L21/04 , H01L29/24 , H01L29/45 , H01L21/44
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/1608 , H01L29/456 , Y10S438/931
摘要： A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap material may comprise silicon carbide and a low melting point contact material may comprise aluminum. In another embodiment a substantially uniform ohmic contact may be formed between a contact material and a semiconductor material by annealing the contact at a temperature less than the melting point of the contact material. In an embodiment, the contact may be annealed for more than five hours.

8. 发明申请

US20110318920A1 LOW TEMPERATURE, LONG TERM ANNEALING OF NICKEL CONTACTS TO LOWER INTERFACIAL RESISTANCE 审中-公开
标题翻译：低温，长期退火镍接触降低界面电阻
公开(公告)号：US20110318920A1
公开(公告)日：2011-12-29
申请号：US13038126
申请日：2011-03-01
申请人： William F. Seng , Richard L. Woodin
发明人： William F. Seng , Richard L. Woodin
IPC分类号： H01L21/28
CPC分类号： H01L29/45 , H01L21/0485
摘要： A method of annealing semiconductor devices to form substantially ohmic contact regions between a layer of wide band-gap semiconductor material and contact areas disposed thereon includes exposing the semiconductor devices to an annealing temperature less than approximately 900 degrees Celsius for an annealing duration of greater than approximately two hours.
摘要翻译：退火半导体器件以在宽带隙半导体材料层和其上设置的接触区域之间形成基本欧姆接触区域的方法包括将半导体器件暴露于小于约900摄氏度的退火温度，其退火持续时间大于约两个小时

9. 发明授权

US07618884B2 Method and device with durable contact on silicon carbide 有权
标题翻译：在碳化硅上具有耐久接触的方法和装置
公开(公告)号：US07618884B2
公开(公告)日：2009-11-17
申请号：US12106646
申请日：2008-04-21
申请人： William F. Seng , Richard L. Woodin , Carl Anthony Witt
发明人： William F. Seng , Richard L. Woodin , Carl Anthony Witt
IPC分类号： H01L29/47 , H01L21/44 , H01L21/441
CPC分类号： H01L21/0495 , H01L29/1608 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/812 , H01L29/872 , Y10S438/931
摘要： A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
摘要翻译：肖特基势垒碳化硅器件具有肖特基金属触点。 Re触点27厚于250埃，可以在2000和4000埃之间。通过离子铣削肖特基接触周围的环形区域提供端接结构。

10. 发明授权

US07433391B2 Spread-spectrum receiver with fast M-sequence transform 有权
标题翻译：具有快速M序列变换的扩频接收机
公开(公告)号：US07433391B2
公开(公告)日：2008-10-07
申请号：US11681759
申请日：2007-03-03
申请人： James F. Stafford , Scott A. McDermott , William F. Seng
发明人： James F. Stafford , Scott A. McDermott , William F. Seng
IPC分类号： H04B1/69 , H04B1/707 , H04B1/713
CPC分类号： H04B1/7093 , H04B2001/70935
摘要： A receiving system dynamically searches a communications band for transmissions of messages having the same nominal communications parameters, including the use of the same spreading code, but having potentially different specific frequencies and code-phases. The receiver samples the communications band at each code-phase of the spreading code over a span of down-converted transmission frequencies. When a message element is detected at a particular code-phase and frequency, it is forwarded to a demodulator that demodulates the message and sends it to its intended destination. This technique allows each transmitter to be independent of the receiver. In a preferred embodiment of this invention, a Fast M-Sequence Transform (a Walsh-Hadamard Transform) is used to determine the power level at multiple code-phases at a given frequency in parallel, thereby substantially reducing the time required to search for transmissions at each discrete code-phase.
摘要翻译：接收系统动态地搜索通信频带中具有相同标称通信参数的消息的传输，包括使用相同的扩展码，但具有潜在不同的特定频率和码相位。接收机在扩展码的每个代码阶段通过下变频传输频率的跨度对通信频带进行采样。当在特定码相和频率处检测到消息元素时，它被转发到解调器，解调器将其发送到其预定的目的地。这种技术允许每个发射机独立于接收机。在本发明的优选实施例中，使用快速M序列变换（沃尔什 - 哈达马夫变换）来以给定频率并行确定多个码相的功率电平，从而大大减少搜索传输所需的时间在每个离散代码阶段。

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