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1. 发明申请

US20070108368A1 Focus masking structures, focus patterns and measurements thereof 审中-公开
公开(公告)号：US20070108368A1
公开(公告)日：2007-05-17
申请号：US11647793
申请日：2006-12-28
申请人： Walter Mieher , Daniel Wack , Ady Levy
发明人： Walter Mieher , Daniel Wack , Ady Levy
IPC分类号： G02B27/40
CPC分类号： B22D11/10 , B22D11/064 , B22D39/003 , F27D3/14 , F27D19/00 , H02K44/00 , H02K44/04
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.

2. 发明申请

US20050208391A1 Focus masking structures, focus patterns and measurements thereof 有权
公开(公告)号：US20050208391A1
公开(公告)日：2005-09-22
申请号：US11084556
申请日：2005-03-16
申请人： Walter Mieher , Daniel Wack , Ady Levy
发明人： Walter Mieher , Daniel Wack , Ady Levy
IPC分类号： G02B7/28 , G03F1/28 , G03F7/20 , G03F7/207 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.

3. 发明申请

US20090135416A1 Parametric Profiling Using Optical Spectroscopic Systems 有权
标题翻译：使用光谱系统进行参数分析
公开(公告)号：US20090135416A1
公开(公告)日：2009-05-28
申请号：US11868740
申请日：2007-10-08
申请人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
发明人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
IPC分类号： G01B11/28 , G01J3/00 , G01B11/00
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

4. 发明申请

US20080094630A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20080094630A1
公开(公告)日：2008-04-24
申请号：US11963730
申请日：2007-12-21
申请人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher Bevis , John Fielden , Noah Bareket , Kenneth Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus Dziura , Mark Ghinovker
发明人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher Bevis , John Fielden , Noah Bareket , Kenneth Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus Dziura , Mark Ghinovker
IPC分类号： G01B11/00 , G01N21/55 , G01B9/02
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。提供了各自包括第一和第二结构的一部分的目标A，B，C和D。目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。目标A，B，C和D用电磁辐射照射，以获得光谱S A，B，C，S和S，分别来自目标A，B，C和D的SUB> D

5. 发明申请

US20080049226A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20080049226A1
公开(公告)日：2008-02-28
申请号：US11926603
申请日：2007-10-29
申请人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant
发明人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.
摘要翻译： Disclose是一个组合的散点图标记，包括能够被测量以确定CD或轮廓信息的散射关键维度（CD）或轮廓目标，以及布置在散射测量CD或轮廓目标上的散射测绘覆盖目标，散射测绘覆盖目标与散射光谱CD协调或轮廓目标以形成能够被测量以确定覆盖的散射测量标记。

6. 发明申请

US20120281275A1 Systems and Methods for Determining One or More Characteristics of a Specimen Using Radiation in the Terahertz Range 审中-公开
标题翻译：用于确定在太赫兹范围内使用辐射的样品的一个或多个特性的系统和方法
公开(公告)号：US20120281275A1
公开(公告)日：2012-11-08
申请号：US13552642
申请日：2012-07-19
申请人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
发明人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
IPC分类号： G06K7/10 , B05C11/00 , B05C9/00 , B05C11/02 , B05C5/02 , C23C16/44
CPC分类号： G01N21/9505 , G01N21/3581 , H01L22/12
摘要： Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.
摘要翻译：提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。一个系统包括被配置为用辐射照射样本的照明子系统。该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。检测到的辐射包括太赫兹范围内的辐射。另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

7. 发明授权

US07280230B2 Parametric profiling using optical spectroscopic systems 有权
标题翻译：使用光谱系统进行参数分析
公开(公告)号：US07280230B2
公开(公告)日：2007-10-09
申请号：US10327466
申请日：2002-12-19
申请人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
发明人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
IPC分类号： G01B11/28
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。不同的辐射参数，例如反射率R S，R P和椭偏参数可用于测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

8. 发明授权

US07382447B2 Method for determining lithographic focus and exposure 有权
标题翻译：确定光刻焦点和曝光的方法
公开(公告)号：US07382447B2
公开(公告)日：2008-06-03
申请号：US10186294
申请日：2002-06-26
申请人： Walter Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
发明人： Walter Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
IPC分类号： G01B9/00 , G01B11/24 , G01B11/30 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/70641
摘要： A method for determining one or more process parameter settings of a photolithographic system is disclosed.
摘要翻译：公开了一种用于确定光刻系统的一个或多个工艺参数设置的方法。

9. 发明申请

US20060204073A1 Overlay marks, methods of overlay mark design and methods of overlay measurements 有权
公开(公告)号：US20060204073A1
公开(公告)日：2006-09-14
申请号：US11432947
申请日：2006-05-12
申请人： Mark Ghinovker , Michael Adel , Walter Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Mieher , Ady Levy , Dan Wack
IPC分类号： G06K9/00
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.

10. 发明授权

US07826071B2 Parametric profiling using optical spectroscopic systems 有权
标题翻译：使用光谱系统进行参数分析
公开(公告)号：US07826071B2
公开(公告)日：2010-11-02
申请号：US11868740
申请日：2007-10-08
申请人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
发明人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
IPC分类号： G01B11/14
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

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