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1. 发明授权

US06638684B2 Photosensitive laminate, process for forming resist pattern using same and positive resist composition 失效
标题翻译：感光层压板，使用其形成抗蚀剂图案的方法和正性抗蚀剂组合物
公开(公告)号：US06638684B2
公开(公告)日：2003-10-28
申请号：US09799549
申请日：2001-03-07
申请人： Waki Okubo , Kazufumi Sato , Kazuyuki Nitta , Toshiyuki Ogata
发明人： Waki Okubo , Kazufumi Sato , Kazuyuki Nitta , Toshiyuki Ogata
IPC分类号： G03F7039
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/111
摘要： A photosensitive laminate includes a substrate and a resist layer 500 to 5800 angstroms thick formed on the substrate. A composition for the resist layer includes (A) a compound which generates an acid upon irradiation with radioactive ray, (B) an alkali-soluble novolak resin, and (C) a compound having at least one acid-decomposable dissolution-inhibiting group, and the dissolution-inhibiting group is decomposable by action of an acid generated from the ingredient (A) to yield an organic carboxylic acid. This photosensitive laminate is sequentially subjected to selective exposure to KrF excimer laser light or to light having a short wavelength equal to or less than that of F2 laser, post-exposure baking, and developing with an alkali to yield a resist pattern.
摘要翻译：感光层压板包括基材和形成在基材上的500至5800埃的抗蚀剂层。抗蚀层的组合物包括（A）在放射线照射时产生酸的化合物，（B）碱溶性酚醛清漆树脂，（C）具有至少一个可酸分解溶解抑制基团的化合物，并且溶解抑制基团可以通过由成分（A）产生的酸的作用而分解，得到有机羧酸。依次对该感光性层叠体进行KrF准分子激光的选择性曝光或者等于或小于F2激光的短波长，曝光后烘烤和用碱显影以产生抗蚀剂图案的光。

2. 发明授权

US06444394B1 Positive-working photoresist composition 有权
标题翻译：正光刻胶组合物
公开(公告)号：US06444394B1
公开(公告)日：2002-09-03
申请号：US09521205
申请日：2000-03-08
申请人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
发明人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , Y10S430/106
摘要： Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which a combination of a first resin of which from 30 to 60% the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin a weight proportion of 1.9 to 9:1.
摘要翻译：公开了一种新颖的化学放大正性光致抗蚀剂组合物，其能够赋予具有优异性能的图案化抗蚀剂层，例如图案化抗蚀剂层的光敏性，图案分辨率，耐热性和横截面轮廓。该组合物的特征在于使用含羟基的树脂成分作为成膜树脂成分，其中第一树脂的30-60％的羟基被酸解离的溶解性降低基团取代其中5〜20％的羟基被第一树脂中相同种类的酸解离基取代的第二树脂的重量比为1.9-9:1。

3. 发明授权

US5736296A Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound 失效
标题翻译：包含两种具有不同的酸可分解基团的聚羟基苯乙烯和产酸化合物的混合物的正性抗蚀剂组合物
公开(公告)号：US5736296A
公开(公告)日：1998-04-07
申请号：US625931
申请日：1996-04-01
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms; and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B）酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代式（I）：其中R 1表示氢原子或甲基，R 2表示甲基或乙基，R 3表示碳原子数1〜4的低级烷基。和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧羰基氧基取代。该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

4. 发明授权

US06818380B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06818380B2
公开(公告)日：2004-11-16
申请号：US10678259
申请日：2003-10-06
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photolithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

5. 发明授权

US06787290B2 Positive-working photoresist composition and resist patterning method using same 有权
标题翻译：正性光致抗蚀剂组合物和使用其的抗蚀剂图案化方法
公开(公告)号：US06787290B2
公开(公告)日：2004-09-07
申请号：US09928430
申请日：2001-08-14
申请人： Kazuyuki Nitta , Kazufumi Sato , Daisuke Kawana , Satoshi Shimatani
发明人： Kazuyuki Nitta , Kazufumi Sato , Daisuke Kawana , Satoshi Shimatani
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/115
摘要： The invention discloses a crosslinked chemical-amplification positive-working photoresist composition of good pattern resolution and storage stability, which is suitable for pattern size diminution by the thermal flow process after development. The composition comprises: (A) a polyhydroxystyrene resin substituted for a part of the hydroxyl hydrogen atoms by acid-dissociable solubility-reducing groups; (B) a radiation-sensitive acid-generating compound; (C) a polyvinyl ether compound as a crosslinking agent; (D) a carboxylic acid; and (E) an amine compound.
摘要翻译：本发明公开了一种具有良好的图案分辨率和储存稳定性的交联化学增幅正性光致抗蚀剂组合物，适用于显影后热流程图形尺寸的减小。该组合物包含：（A）通过酸解离的溶解性降低基团取代部分羟基氢原子的多羟基苯乙烯树脂; （B）辐射敏感的产酸化合物; （C）作为交联剂的聚乙烯醚化合物; （D）羧酸; 和（E）胺化合物。

6. 发明授权

US06677103B2 Positive-working photoresist composition 有权
标题翻译：正光刻胶组合物
公开(公告)号：US06677103B2
公开(公告)日：2004-01-13
申请号：US10114258
申请日：2002-04-03
申请人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
发明人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , Y10S430/106
摘要： Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which is a combination of a first resin of which from 30 to 60% of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin in a weight proportion of 1.9 to 9:1.
摘要翻译：公开了一种新颖的化学放大正性光致抗蚀剂组合物，其能够赋予具有优异性能的图案化抗蚀剂层，例如图案化抗蚀剂层的光敏性，图案分辨率，耐热性和横截面轮廓。该组合物的特征在于使用含羟基的树脂成分作为成膜树脂成分，该含羟基的树脂成分是其中30-60％的羟基被酸解离溶解度代替的第一树脂，还原基团，其中5〜20％的羟基被第一树脂中相同种类的酸解离基团以1.9至9:1的重量比取代的第二树脂。

7. 发明授权

US6159652A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US6159652A
公开(公告)日：2000-12-12
申请号：US20408
申请日：1998-02-09
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B）酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代式（I）：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示碳原子数1〜4的低级烷基。和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧基 - 羰基氧基取代。该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

8. 发明授权

US5908730A Chemical-sensitization photoresist composition 失效
标题翻译：化学增感光刻胶组合物
公开(公告)号：US5908730A
公开(公告)日：1999-06-01
申请号：US898320
申请日：1997-07-22
申请人： Kazuyuki Nitta , Kazufumi Sato , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
发明人： Kazuyuki Nitta , Kazufumi Sato , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039
摘要： Proposed is a positive- or negative-working chemical-sensitization photoresist composition having advantages in respect of the contrast and resolution of patterning, photosensitivity and cross sectional profile of the patterned resist layer as well as in respect of stability of the latent image formed by pattern-wise exposure to light before post-exposure baking treatment. The composition comprises: (A) 100 parts by weight of a film-forming resinous ingredient which causes a change, i.e. increase or decrease, of solubility in an aqueous alkaline solution by the interaction with an acid; and (B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a diazomethane compound represented by the general formulaR.sup.1 --SO.sub.2 --C(.dbd.N.sub.2)--SO.sub.2 --R.sup.2,in which R.sup.1 and R.sup.2 are each, independently from the other, a monovalent cyclic group substituted on the cyclic nucleus by an acid-dissociable group such as a tert-butoxycarbonyl and acetal groups.
摘要翻译：提出了一种正性或负性的化学增感光致抗蚀剂组合物，其在图案化抗蚀剂层的图案的对比度和分辨率，光敏性和横截面轮廓方面以及关于通过图案形成的潜像的稳定性方面具有优势在曝光前烘烤处理下曝光。该组合物包含：（A）100重量份成膜树脂成分，其通过与酸的相互作用而引起在碱性水溶液中的溶解度的改变，即增加或减少; 和（B）0.5〜20重量份的辐射敏感性酸产生剂，其为通式R 1 -SO 2 -C（= N 2）-SO 2 -R 2表示的重氮甲烷化合物，其中R 1和R 2为各自独立地是通过酸解离基团如叔丁氧基羰基和缩醛基在环状核上取代的一价环状基团。

9. 发明授权

US06777158B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06777158B2
公开(公告)日：2004-08-17
申请号：US09939842
申请日：2001-08-28
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

10. 发明授权

US5948589A Positive-working photoresist composition 失效
标题翻译：正光刻胶组合物
公开(公告)号：US5948589A
公开(公告)日：1999-09-07
申请号：US658234
申请日：1996-06-04
申请人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
发明人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Proposed is an improved chemical sensitization-type positive-working photoresist composition of high sensitivity and high pattern resolution for the photolithographic patterning works in the manufacture of semiconductor devices, which exhibits excellent post-exposure stability of the latent image formed by the pattern-wise exposure of the resist layer to actinic rays not to be affected relative to the fidelity of pattern reproduction and sensitivity even by standing for a length of time after the exposure to actinic rays before the subsequent processing treatment. The composition is characterized by the formulation of, in addition to an acid generating compound to release an acid by the irradiation with actinic rays and a resinous ingredient capable of being imparted with increased solubility in an aqueous alkaline developer solution by the presence of an acid, an amine compound such as triethylamine and a carboxylic acid such as salicylic acid in combination.
摘要翻译：提出了一种用于半导体器件制造中的光刻图案化工艺的高灵敏度和高图案分辨率的改进的化学增感型正性光致抗蚀剂组合物，其显示出通过图案曝光形成的潜像的优异的后曝光稳定性的抗蚀剂层相对于图案再现和灵敏度的保真度而不受影响的光化射线，即使在随后的处理处理之后暴露于光化射线之后静置一段时间。该组合物的特征在于除了通过光化射线照射释放酸的酸产生化合物和能够通过存在酸在碱性显影剂水溶液中赋予增加的溶解性的树脂成分之外，胺化合物如三乙胺和羧酸如水杨酸组合。

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