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1. 发明授权

US06444394B1 Positive-working photoresist composition 有权
标题翻译：正光刻胶组合物
公开(公告)号：US06444394B1
公开(公告)日：2002-09-03
申请号：US09521205
申请日：2000-03-08
申请人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
发明人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , Y10S430/106
摘要： Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which a combination of a first resin of which from 30 to 60% the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin a weight proportion of 1.9 to 9:1.
摘要翻译：公开了一种新颖的化学放大正性光致抗蚀剂组合物，其能够赋予具有优异性能的图案化抗蚀剂层，例如图案化抗蚀剂层的光敏性，图案分辨率，耐热性和横截面轮廓。该组合物的特征在于使用含羟基的树脂成分作为成膜树脂成分，其中第一树脂的30-60％的羟基被酸解离的溶解性降低基团取代其中5〜20％的羟基被第一树脂中相同种类的酸解离基取代的第二树脂的重量比为1.9-9:1。

2. 发明授权

US06677103B2 Positive-working photoresist composition 有权
标题翻译：正光刻胶组合物
公开(公告)号：US06677103B2
公开(公告)日：2004-01-13
申请号：US10114258
申请日：2002-04-03
申请人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
发明人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , Y10S430/106
摘要： Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which is a combination of a first resin of which from 30 to 60% of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin in a weight proportion of 1.9 to 9:1.
摘要翻译：公开了一种新颖的化学放大正性光致抗蚀剂组合物，其能够赋予具有优异性能的图案化抗蚀剂层，例如图案化抗蚀剂层的光敏性，图案分辨率，耐热性和横截面轮廓。该组合物的特征在于使用含羟基的树脂成分作为成膜树脂成分，该含羟基的树脂成分是其中30-60％的羟基被酸解离溶解度代替的第一树脂，还原基团，其中5〜20％的羟基被第一树脂中相同种类的酸解离基团以1.9至9:1的重量比取代的第二树脂。

3. 发明授权

US06605417B2 Method for decreasing surface defects of patterned resist layer 有权
标题翻译：降低图案化抗蚀剂层表面缺陷的方法
公开(公告)号：US06605417B2
公开(公告)日：2003-08-12
申请号：US09771563
申请日：2001-01-30
申请人： Kazuyuki Nitta , Taku Nakao , Satoshi Maemori , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Taku Nakao , Satoshi Maemori , Tatsuya Matsumi
IPC分类号： G03F700
CPC分类号： G03F7/38
摘要： Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether)disulfonic acids.
摘要翻译：公开了一种通过以下步骤获得的用于减小基板表面上的图案化光致抗蚀剂层的表面缺陷的方法，所述方法包括以下步骤：（a）在基板表面上形成正性化学扩增光致抗蚀剂组合物的光致抗蚀剂层，（b ）将光致抗蚀剂层图案化地曝光到光化射线，（c）对图案曝光的光致抗蚀剂层进行后曝光烘烤处理和（d）显影处理。可以通过使后曝光烘烤处理后的光致抗蚀剂层与pH为3.5以下的酸性水溶液接触1〜90秒来实现。酸性水溶液中所含的酸优选为芳香族磺酸，更优选为二苯基醚磺酸，例如十二烷基（二苯基醚）二磺酸。

4. 发明授权

US07094924B2 Method for decreasing surface defects of patterned resist layer 有权
公开(公告)号：US07094924B2
公开(公告)日：2006-08-22
申请号：US10354973
申请日：2003-01-31
申请人： Kazuyuki Nitta , Taku Nakao , Satoshi Maemori , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Taku Nakao , Satoshi Maemori , Tatsuya Matsumi
IPC分类号： C07C309/00
CPC分类号： G03F7/38
摘要： Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether) disulfonic acids.

5. 发明授权

US06777158B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06777158B2
公开(公告)日：2004-08-17
申请号：US09939842
申请日：2001-08-28
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

6. 发明申请

US20070122744A1 Positive-working photoresist composition and photosensitive material using same 审中-公开
标题翻译：正性光致抗蚀剂组合物和使用其的感光材料
公开(公告)号：US20070122744A1
公开(公告)日：2007-05-31
申请号：US11644940
申请日：2006-12-26
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta
IPC分类号： G03C1/00
CPC分类号： G03F7/0048 , G03F7/0392 , G03F7/0757
摘要： The invention discloses a chemical-amplification positive-working photoresist composition in the form of a solution which is particularly suitable for the formation, on the surface of a substrate, of a photoresist layer having a thickness of 100 to 650 nm to be in compliance with the trend toward increasing fineness of photolithographic patterning in the manufacture of semiconductor devices. The photoresist composition comprises an organic compound capable of generating an acid by exposure to actinic rays, and a film-forming resinous compound having acid-dissociable substituent groups and capable of being imparted with increased solubility in an aqueous alkaline solution by interacting with an acid and a surface active agent in an amount not exceeding 50 ppm by weight based on the resinous compound, optionally, in combination with a tertiary aliphatic amine compound and/or a carboxylic acid.
摘要翻译：本发明公开了一种溶液形式的化学扩增正性光致抗蚀剂组合物，其特别适用于在基材表面上形成厚度为100至650nm的光致抗蚀剂层以符合在制造半导体器件时增加光刻图案细度的趋势。光致抗蚀剂组合物包括能够通过暴露于光化射线产生酸的有机化合物和具有酸解离性取代基的成膜树脂化合物，并且能够通过与酸相互作用赋予在碱性水溶液中更高的溶解度，基于树脂化合物，任选地与叔脂族胺化合物和/或羧酸组合的量不超过50重量ppm的表面活性剂。

7. 发明授权

US06818380B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06818380B2
公开(公告)日：2004-11-16
申请号：US10678259
申请日：2003-10-06
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photolithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

8. 发明申请

US20100129758A1 Resist surface modifying liquid, and method for formation of resist pattern using the same 有权
标题翻译：抗表面改性液体，以及使用其形成抗蚀剂图案的方法
公开(公告)号：US20100129758A1
公开(公告)日：2010-05-27
申请号：US12591585
申请日：2009-11-24
申请人： Satoshi Maemori , Tomoya Kumagai
发明人： Satoshi Maemori , Tomoya Kumagai
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/38 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/2041
摘要： Provided are: a resist surface modifying liquid which is used as a surface treatment liquid of a resist film prior to a post exposure baking (PEB) step, and which can inhibit occurrence of defects of the resist film by reducing water repellency; and a method for forming a resist pattern using the same. A resist surface modifying liquid which is used as a surface treatment liquid prior to a post exposure baking (PEB) step of a resist film, the resist surface modifying liquid containing an acidic compound, and at least one of an alcohol-based solvent represented by a certain general formula and an ether-based solvent represented by a certain general formula.
摘要翻译：提供：在曝光后烘烤（PEB）步骤之前用作抗蚀剂膜的表面处理液的抗蚀剂表面改性液体，并且可以通过降低拒水性来抑制抗蚀剂膜的缺陷的发生; 以及使用其形成抗蚀剂图案的方法。一种抗蚀剂表面改性液体，其在抗蚀剂膜的后曝光烘烤（PEB）步骤之前用作表面处理液，所述抗蚀剂表面改性液体含有酸性化合物，以及至少一种由一定的通式和由一种通式表示的醚系溶剂。

9. 发明申请

US20060210916A1 Positive photoresist composition and method of forming resist pattern 有权
公开(公告)号：US20060210916A1
公开(公告)日：2006-09-21
申请号：US10566425
申请日：2004-09-17
申请人： Akiyoshi Yamazaki , Kazuo Tani , Naoto Motoike , Satoshi Maemori , Sachiko Yoshizawa
发明人： Akiyoshi Yamazaki , Kazuo Tani , Naoto Motoike , Satoshi Maemori , Sachiko Yoshizawa
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid generated from the component (B).

10. 发明授权

US09012125B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US09012125B2
公开(公告)日：2015-04-21
申请号：US13343481
申请日：2012-01-04
申请人： Shinji Kumada , Satoshi Maemori , Masatoshi Arai , Daiju Shiono
发明人： Shinji Kumada , Satoshi Maemori , Masatoshi Arai , Daiju Shiono
IPC分类号： G03F7/004 , G03F7/20 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/20
摘要： A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在显影液中溶解度变化的碱成分（A），可以用于使用波长为193nm以下的光作为曝光光源的光刻工序，暴露时产生酸的酸产生剂组分（B）和具有如下所示的通式（c0）表示的结构单元（c0）的聚合化合物（C），其中聚合化合物（C）的量小于25 相对于100质量份的基础成分（A）为质量份。在该式中，R表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基，R1表示具有一个或多个伯或仲醇羟基的有机基团，或链状叔醇羟基。

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