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1. 发明授权

US07758841B2 Reductive functionalization of carbon nanotubes 有权
标题翻译：碳纳米管的还原官能化
公开(公告)号：US07758841B2
公开(公告)日：2010-07-20
申请号：US10592463
申请日：2005-03-11
申请人： W. Edward Billups , Anil K. Sadana , Feng Liang , Robert H. Hauge
发明人： W. Edward Billups , Anil K. Sadana , Feng Liang , Robert H. Hauge
IPC分类号： D01F9/12
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/05 , C01B32/152 , C01B32/174 , C01B2202/02 , C01B2202/36 , C01P2002/82 , C01P2002/88 , C01P2004/03 , C01P2004/04 , C01P2004/13
摘要： The present invention is directed to novel processes for the functionalization (derivatization) of carbon nanotubes and, as an extension, to fullerenes and other carbon surfaces. Generally, such processes involve reductive pathways. In some embodiments, carbon nanotubes are reacted with alkali metal and organic halides in anhydrous liquid ammonia. In other embodiments, polymers are grown from carbon nanotube sidewalls by reacting carbon nanotubes with alkali metal and monomer species in anhydrous liquid ammonia.
摘要翻译：本发明涉及用于碳纳米管的功能化（衍生化）和作为对富勒烯和其它碳表面的延伸的新方法。通常，这些方法涉及还原途径。在一些实施方案中，碳纳米管与碱金属和有机卤化物在无水液态氨中反应。在其它实施方案中，通过使碳纳米管与碱金属和单体物质在无水液态氨中反应，从碳纳米管侧壁生长聚合物。

2. 发明授权

US08562935B2 Amplification of carbon nanotubes via seeded-growth methods 失效
标题翻译：通过种子生长方法扩增碳纳米管
公开(公告)号：US08562935B2
公开(公告)日：2013-10-22
申请号：US10575352
申请日：2004-10-14
申请人： Robert H. Hauge , Andrew R. Barron , James M. Tour , Howard K. Schmidt , W. Edward Billups , Christopher A. Dyke , Valerie C. Moore , Elizabeth Whitsitt , Robin E. Anderson , Ramon Colorado, Jr. , Michael P. Stewart , Douglas C. Ogrin , Irene M. Marek
发明人： Richard E. Smalley , Robert H. Hauge , Andrew R. Barron , James M. Tour , Howard K. Schmidt , W. Edward Billups , Christopher A. Dyke , Valerie C. Moore , Elizabeth Whitsitt , Robin E. Anderson , Ramon Colorado, Jr. , Michael P. Stewart , Douglas C. Ogrin
IPC分类号： D01F9/127
CPC分类号： B82Y40/00 , B01J23/881 , B01J27/22 , B82Y30/00 , C01B3/0021 , C01B32/162 , C01B32/172 , C01B32/176 , C01B2202/02 , C01B2202/04 , C01B2202/06 , C01B2202/36 , Y02E60/325
摘要： The present invention is directed towards methods (processes) of providing large quantities of carbon nanotubes (CNTs) of defined diameter and chirality (i.e., precise populations). In such processes, CNT seeds of a pre-selected diameter and chirality are grown to many (e.g., hundreds) times their original length. This is optionally followed by cycling some of the newly grown material back as seed material for regrowth. Thus, the present invention provides for the large-scale production of precise populations of CNTs, the precise composition of such populations capable of being optimized for a particular application (e.g., hydrogen storage). The present invention is also directed to complexes of CNTs and transition metal catalyst precurors, such complexes typically being formed en route to forming CNT seeds.
摘要翻译：本发明涉及提供大量具有规定直径和手性（即精确群体）的碳纳米管（CNT）的方法（方法）。在这种方法中，预先选择的直径和手性的CNT种子生长到其原始长度的许多（例如，数百）倍。随后可以将一些新生成的材料循环回种子材料再生。因此，本发明提供了大规模生产精确的碳纳米管群体，能够针对特定应用（例如，氢存储）优化的这些群体的精确组成。本发明还涉及CNT和过渡金属催化剂前体的复合物，这些络合物通常在形成CNT晶种途中形成。

3. 发明申请

US20080213162A1 Amplification of Carbon Nanotubes Via Seeded-Growth Methods 失效
标题翻译：通过种子生长方法扩增碳纳米管
公开(公告)号：US20080213162A1
公开(公告)日：2008-09-04
申请号：US10575352
申请日：2004-10-14
申请人： Richard E. Smalley , Irene M. Marek , Robert H. Hauge , Andrew R. Barron , James M. Tour , Howard K. Schmidt , W. Edward Billups , Christopher A. Dyke , Valerie C. Moore , Elizabeth Whitsitt , Robin E. Anderson , Ramon Colorado , Michael P. Stewart , Douglas C. Ogrin
发明人： Richard E. Smalley , Irene M. Marek , Robert H. Hauge , Andrew R. Barron , James M. Tour , Howard K. Schmidt , W. Edward Billups , Christopher A. Dyke , Valerie C. Moore , Elizabeth Whitsitt , Robin E. Anderson , Ramon Colorado , Michael P. Stewart , Douglas C. Ogrin
IPC分类号： C09C1/44
CPC分类号： B82Y40/00 , B01J23/881 , B01J27/22 , B82Y30/00 , C01B3/0021 , C01B32/162 , C01B32/172 , C01B32/176 , C01B2202/02 , C01B2202/04 , C01B2202/06 , C01B2202/36 , Y02E60/325
摘要： The present invention is directed towards methods (processes) of providing large quantities of carbon nanotubes (CNTs) of defined diameter and chirality (i.e., precise populations). In such processes, CNT seeds of a pre-selected diameter and chirality are grown to many (e.g., hundreds) times their original length. This is optionally followed by cycling some of the newly grown material back as seed material for regrowth. Thus, the present invention provides for the large-scale production of precise populations of CNTs, the precise composition of such populations capable of being optimized for a particular application (e.g., hydrogen storage). The present invention is also directed to complexes of CNTs and transition metal catalyst precurors, such complexes typically being formed en route to forming CNT seeds.
摘要翻译：本发明涉及提供大量具有规定直径和手性（即，精确群体）的大量碳纳米管（CNT）的方法（方法）。在这种方法中，预先选择的直径和手性的CNT种子生长到其原始长度的许多（例如，数百）倍。随后可以将一些新生成的材料循环回种子材料再生。因此，本发明提供了大规模生产精确的碳纳米管群体，能够针对特定应用（例如，氢存储）优化的这些群体的精确组成。本发明还涉及CNT和过渡金属催化剂前体的复合物，这些络合物通常在形成CNT晶种途中形成。

4. 发明申请

US20120145997A1 PRODUCTION OF VERTICAL ARRAYS OF SMALL DIAMETER SINGLE-WALLED CARBON NANOTUBES 失效
标题翻译：生产小直径单壁碳纳米管的垂直阵列
公开(公告)号：US20120145997A1
公开(公告)日：2012-06-14
申请号：US12278736
申请日：2007-02-06
申请人： Robert H. Hauge , Ya-Qiong Xu
发明人： Robert H. Hauge , Ya-Qiong Xu
IPC分类号： H01L29/15 , B01J19/08 , H01L21/18 , D01F9/127
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/02 , C01B2202/36 , C23C16/26 , C30B11/12 , C30B29/602
摘要： A hot filament chemical vapor deposition method has been developed to grow at least one vertical single-walled carbon nanotube (SWNT). In general, various embodiments of the present invention disclose novel processes for growing and/or producing enhanced nanotube carpets with decreased diameters as compared to the prior art.
摘要翻译：已经开发了热丝化学气相沉积方法来生长至少一个垂直单壁碳纳米管（SWNT）。通常，与现有技术相比，本发明的各种实施方案公开了用于生长和/或生产具有降低的直径的增强型纳米管地毯的新方法。

5. 发明申请

US20100284898A1 BULK CUTTING OF CARBON NANOTUBES USING ELECTRON BEAM IRRADIATION 失效
标题翻译：使用电子束辐照的碳纳米管的切割
公开(公告)号：US20100284898A1
公开(公告)日：2010-11-11
申请号：US12299634
申请日：2007-05-07
申请人： Kirk J. Ziegler , Urs Rauwald , Robert H. Hauge , Howard K. Schmidt , Irene Morin Marek , Zhenning Gu , W. Carter Kittrell
发明人： Kirk J. Ziegler , Urs Rauwald , Robert H. Hauge , Howard K. Schmidt , Irene Morin Marek , Zhenning Gu , W. Carter Kittrell
IPC分类号： D01F9/12
CPC分类号： C01B32/176 , C01B32/174 , C01B2202/02 , C01B2202/28 , C01B2202/34
摘要： According to some embodiments, the present invention provides a method for attaining short carbon nanotubes utilizing electron beam irradiation, for example, of a carbon nanotube sample. The sample may be pretreated, for example by oxonation. The pretreatment may introduce defects to the sidewalls of the nanotubes. The method is shown to produces nanotubes with a distribution of lengths, with the majority of lengths shorter than 100 tun. Further, the median length of the nanotubes is between about 20 nm and about 100 nm.
摘要翻译：根据一些实施方案，本发明提供了利用电子束照射来获得例如碳纳米管样品的短碳纳米管的方法。样品可以进行预处理，例如通过氧化。预处理可能在纳米管的侧壁上引入缺陷。该方法显示产生具有长度分布的纳米管，其大部分长度短于100μm。此外，纳米管的中值长度在约20nm和约100nm之间。

6. 发明授权

US5071677A Halogen-assisted chemical vapor deposition of diamond 失效
标题翻译：金属辅助化学气相沉积金刚石
公开(公告)号：US5071677A
公开(公告)日：1991-12-10
申请号：US528804
申请日：1990-05-24
申请人： Donald E. Patterson , Robert H. Hauge , C. Judith Chu , John L. Margrave
发明人： Donald E. Patterson , Robert H. Hauge , C. Judith Chu , John L. Margrave
IPC分类号： C23C16/26 , C23C16/27
CPC分类号： C23C16/27 , C23C16/277 , Y10S427/103
摘要： The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen and (3) a halogen through a reactor over the substrate material. The reactant gases may be pre-mixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pre-treatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.The reactant gas mixture preferably is passed through a reactor, a first portion of which is heated to a temperature of from about 400.degree. C. to about 920.degree. C. and more preferably from about 800.degree. C. to about 920.degree. C. The substrate on which the diamond is to be grown is placed in the reactor in a zone that is maintained at a lower temperature of from about 250.degree. C. to about 750.degree. C., which is the preferred diamond growth temperature range. The process preferably is practiced at ambient pressures, although lower or higher pressures may be used. Significant amounts of pure diamond films and particles have been obtained in as little as eight hours. The purity of the diamond films and particles has been verified by Raman spectroscopy and powder x-ray diffraction techniques.
摘要翻译：本发明涉及通过使能够（1）碳，（2）氢和（3）卤素的气体或气体混合物通过反应器流过衬底的方式将金刚石膜和颗粒沉积在各种衬底上的方法材料。反应物气体可以与惰性气体预混合，以便使总体气体混合物组合物的碳体积百分比低并富含氢气。不需要将反应物气体预处理至高能量状态，如在金刚石的化学气相沉积的大多数现有技术方法中。由于不需要预处理，所以该方法可以应用于几乎任何所需尺寸，形状或构型的基底。反应气体混合物优选通过反应器，其第一部分被加热到约400℃至约920℃，更优选约800℃至约920℃的温度。将金刚石生长在其上的底物置于反应器中，该区域保持在约250℃至约750℃的较低温度，这是优选的金刚石生长温度范围。该方法优选在环境压力下实施，尽管可以使用更低或更高的压力。在短短8小时内就已经获得了大量的纯金刚石膜和颗粒。通过拉曼光谱和粉末X射线衍射技术验证了金刚石膜和颗粒的纯度。

7. 发明授权

US08540959B2 Bulk cutting of carbon nanotubes using electron beam irradiation 失效
标题翻译：使用电子束照射大量切割碳纳米管
公开(公告)号：US08540959B2
公开(公告)日：2013-09-24
申请号：US12299634
申请日：2007-05-07
申请人： Kirk J. Ziegler , Urs Rauwald , Robert H. Hauge , Howard K. Schmidt , W. Carter Kittrell , Zhenning Gu , Irene Morin Marek
发明人： Kirk J. Ziegler , Urs Rauwald , Robert H. Hauge , Howard K. Schmidt , Richard E. Smalley , W. Carter Kittrell , Zhenning Gu
IPC分类号： D01F9/12
CPC分类号： C01B32/176 , C01B32/174 , C01B2202/02 , C01B2202/28 , C01B2202/34
摘要： According to some embodiments, the present invention provides a method for attaining short carbon nanotubes utilizing electron beam irradiation, for example, of a carbon nanotube sample. The sample may be pretreated, for example by oxonation. The pretreatment may introduce defects to the sidewalls of the nanotubes. The method is shown to produces nanotubes with a distribution of lengths, with the majority of lengths shorter than 100 tun. Further, the median length of the nanotubes is between about 20 nm and about 100 nm.
摘要翻译：根据一些实施方案，本发明提供了利用电子束照射来获得例如碳纳米管样品的短碳纳米管的方法。样品可以进行预处理，例如通过氧化。预处理可能在纳米管的侧壁上引入缺陷。该方法显示产生具有长度分布的纳米管，其大部分长度短于100μm。此外，纳米管的中值长度在约20nm和约100nm之间。

8. 发明授权

US08506921B2 Production of vertical arrays of small diameter single-walled carbon nanotubes 失效
标题翻译：生产小直径单壁碳纳米管的垂直阵列
公开(公告)号：US08506921B2
公开(公告)日：2013-08-13
申请号：US12278736
申请日：2007-02-06
申请人： Robert H. Hauge , Ya-Qiong Xu
发明人： Robert H. Hauge , Ya-Qiong Xu
IPC分类号： D01C5/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/02 , C01B2202/36 , C23C16/26 , C30B11/12 , C30B29/602
摘要： A hot filament chemical vapor deposition method has been developed to grow at least one vertical single-walled carbon nanotube (SWNT). In general, various embodiments of the present invention disclose novel processes for growing and/or producing enhanced nanotube carpets with decreased diameters as compared to the prior art.
摘要翻译：已经开发了热丝化学气相沉积方法来生长至少一个垂直单壁碳纳米管（SWNT）。通常，与现有技术相比，本发明的各种实施方案公开了用于生长和/或生产具有降低的直径的增强型纳米管地毯的新方法。

9. 发明授权

US08124503B2 Carbon nanotube diameter selection by pretreatment of metal catalysts on surfaces 有权
标题翻译：通过在表面上预处理金属催化剂的碳纳米管直径选择
公开(公告)号：US08124503B2
公开(公告)日：2012-02-28
申请号：US12281611
申请日：2007-03-05
申请人： Robert H. Hauge , Ya-Qiong Xu , Hongwei Shan , Nolan Walker Nicholas , Myung Jong Kim , Howard K. Schmidt , W. Carter Kittrell
发明人： Robert H. Hauge , Ya-Qiong Xu , Hongwei Shan , Nolan Walker Nicholas , Myung Jong Kim , Howard K. Schmidt , W. Carter Kittrell
IPC分类号： H01L21/20
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/02 , C01B2202/08 , C01B2202/36
摘要： A new and useful nanotube growth substrate conditioning processes is herein disclosed that allows the growth of vertical arrays of carbon nanotubes where the average diameter of the nanotubes can be selected and/or controlled as compared to the prior art.
摘要翻译：本文公开了一种新的有用的纳米管生长衬底调理方法，其允许碳纳米管的垂直阵列的生长，其中与现有技术相比，可以选择和/或控制纳米管的平均直径。

10. 发明授权

US07727504B2 Fibers comprised of epitaxially grown single-wall carbon nanotubes, and a method for added catalyst and continuous growth at the tip 失效
标题翻译：由外延生长的单壁碳纳米管组成的纤维，以及在尖端处添加催化剂和连续生长的方法
公开(公告)号：US07727504B2
公开(公告)日：2010-06-01
申请号：US11291449
申请日：2005-12-01
申请人： W. Carter Kittrell , Yuhuang Wang , Myung Jong Kim , Robert H. Hauge , Richard E. Smalley , Irene Morin Marek, legal representative
发明人： W. Carter Kittrell , Yuhuang Wang , Myung Jong Kim , Robert H. Hauge , Richard E. Smalley
IPC分类号： D01F9/12 , B82B3/00
CPC分类号： D01F9/127 , B82Y30/00 , Y10S977/843 , Y10S977/848
摘要： The present invention is directed to fibers of epitaxially grown single-wall carbon nanotubes (SWNTs) and methods of making same. Such methods generally comprise the steps of: (a) providing a spun SWNT fiber; (b) cutting the fiber substantially perpendicular to the fiber axis to yield a cut fiber; (c) etching the cut fiber at its end with a plasma to yield an etched cut fiber; (d) depositing metal catalyst on the etched cut fiber end to form a continuous SWNT fiber precursor; and (e) introducing feedstock gases under SWNT growth conditions to grow the continuous SWNT fiber precursor into a continuous SWNT fiber.
摘要翻译：本发明涉及外延生长的单壁碳纳米管（SWNT）的纤维及其制造方法。这样的方法通常包括以下步骤：（a）提供纺丝的SWNT纤维; （b）切割基本垂直于纤维轴线的纤维以产生切割的纤维; （c）用等离子体在其端部蚀刻切割的纤维，得到蚀刻的切割纤维; （d）将金属催化剂沉积在蚀刻的切割的纤维端上以形成连续的SWNT纤维前体; 和（e）在SWNT生长条件下引入原料气体以将连续的SWNT纤维前体生长成连续的SWNT纤维。

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