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1. 发明授权

US08455183B2 Resist pattern slimming treatment method 有权
标题翻译：抗皱图案减肥治疗方法
公开(公告)号：US08455183B2
公开(公告)日：2013-06-04
申请号：US12662632
申请日：2010-04-27
申请人： Toyohisa Tsuruda , Yoshihiro Kondo , Atsushi Ookouchi , Masahiro Yamamoto
发明人： Toyohisa Tsuruda , Yoshihiro Kondo , Atsushi Ookouchi , Masahiro Yamamoto
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , H01L21/67155
摘要： A resist pattern slimming treatment method includes: a slimming treatment step of performing a slimming treatment on a resist pattern by applying a solution containing an acid onto a substrate having the resist pattern formed thereon, then performing a heat treatment, and then performing a developing treatment. A database storing kinds of resist material for the resist pattern, concentrations of acid contained in a solution to be applied onto the substrate having the resist pattern formed thereon, and line widths of the resist pattern corresponding to the kinds of resist material and the concentrations of acid is prepared in advance. The concentration of the acid contained in the solution used in the slimming treatment step is based on a concentration of the acid obtained from the database, using, as search keys, the kind of resist material and a target value of the line width of the resist pattern.
摘要翻译：抗蚀剂图案减肥处理方法包括：减肥处理步骤，通过将含有酸的溶液涂布在其上形成有抗蚀剂图案的基材上，然后进行热处理，然后进行显影处理，对抗蚀剂图案进行减肥处理。存储抗蚀剂图案的各种抗蚀剂材料的数据库，涂布在其上形成有抗蚀剂图案的基板上的溶液中所含的酸的浓度，以及与抗蚀剂材料的种类对应的抗蚀剂图案的线宽度预先准备酸。在减肥处理步骤中使用的溶液中所含的酸的浓度基于从数据库中获得的酸的浓度，使用作为搜索关键字的抗蚀剂材料的种类和抗蚀剂的线宽度的目标值模式。

2. 发明申请

US20100291491A1 Resist pattern slimming treatment method 审中-公开
标题翻译：抗皱图案减肥治疗方法
公开(公告)号：US20100291491A1
公开(公告)日：2010-11-18
申请号：US12662343
申请日：2010-04-13
申请人： Masahiro Yamamoto , Yoshihiro Kondo , Atsushi Ookouchi , Toyohisa Tsuruda
发明人： Masahiro Yamamoto , Yoshihiro Kondo , Atsushi Ookouchi , Toyohisa Tsuruda
IPC分类号： G03F7/38
CPC分类号： G03F7/38 , H01L21/0273
摘要： A resist pattern slimming treatment method of performing a slimming treatment on a resist pattern formed on a substrate includes: a slimming treatment step of performing a slimming treatment on the resist pattern by applying a reactant solubilizing the resist pattern onto the resist pattern, then performing a heat treatment on the resist pattern under a heat treatment condition determined in advance, and then performing a developing treatment on the resist pattern; and a first line width measurement step of measuring a line width of the resist pattern before the slimming treatment step. The heat treatment condition is determined based on a measurement value of the line width measured in the first line width measurement step.
摘要翻译：对形成在基板上的抗蚀剂图案进行减肥处理的抗蚀剂图案减肥处理方法包括：减肥处理步骤，通过将抗蚀剂图案溶解在抗蚀剂图案上来进行抗蚀剂图案的减肥处理，然后进行在预先确定的热处理条件下对抗蚀剂图案进行热处理，然后对抗蚀剂图案进行显影处理; 以及第一线宽测量步骤，用于在减肥处理步骤之前测量抗蚀剂图案的线宽。基于在第一线宽测量步骤中测量的线宽的测量值来确定热处理条件。

3. 发明申请

US20100291490A1 Resist pattern slimming treatment method 有权
标题翻译：抗皱图案减肥治疗方法
公开(公告)号：US20100291490A1
公开(公告)日：2010-11-18
申请号：US12662632
申请日：2010-04-27
申请人： Toyohisa Tsuruda , Yoshihiro Kondo , Atsushi Ookouchi , Masahiro Yamamoto
发明人： Toyohisa Tsuruda , Yoshihiro Kondo , Atsushi Ookouchi , Masahiro Yamamoto
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/67155
摘要： A resist pattern slimming treatment method includes: a slimming treatment step of performing a slimming treatment on a resist pattern by applying a solution containing an acid onto a substrate having the resist pattern formed thereon, then performing a heat treatment, and then performing a developing treatment. A database storing kinds of resist material for the resist pattern, concentrations of acid contained in a solution to be applied onto the substrate having the resist pattern formed thereon, and line widths of the resist pattern corresponding to the kinds of resist material and the concentrations of acid is prepared in advance. The concentration of the acid contained in the solution used in the slimming treatment step is based on a concentration of the acid obtained from the database, using, as search keys, the kind of resist material and a target value of the line width of the resist pattern.
摘要翻译：抗蚀剂图案减肥处理方法包括：减肥处理步骤，通过将含有酸的溶液涂布在其上形成有抗蚀剂图案的基材上，然后进行热处理，然后进行显影处理，对抗蚀剂图案进行减肥处理。存储抗蚀剂图案的各种抗蚀剂材料的数据库，涂布在其上形成有抗蚀剂图案的基板上的溶液中所含的酸的浓度，以及与抗蚀剂材料的种类对应的抗蚀剂图案的线宽度预先准备酸。在减肥处理步骤中使用的溶液中所含的酸的浓度基于从数据库中获得的酸的浓度，使用作为搜索关键字的抗蚀剂材料的种类和抗蚀剂的线宽度的目标值模式。

4. 发明申请

US20120014689A1 SUBSTRATE CLEANING APPARATUS, COATING AND DEVELOPING APPARATUS HAVING THE SAME AND SUBSTRATE CLEANING METHOD 有权
标题翻译：基板清洗装置，具有相同的涂层和显影装置和基板清洁方法
公开(公告)号：US20120014689A1
公开(公告)日：2012-01-19
申请号：US13181832
申请日：2011-07-13
申请人： Atsushi Ookouchi , Junji Kume
发明人： Atsushi Ookouchi , Junji Kume
IPC分类号： G03D5/00 , B08B1/00 , G03D15/00
CPC分类号： H01L21/67051 , H01L21/02087
摘要： A substrate cleaning apparatus includes a substrate holding and rotating unit for holding a center of a rear surface of a substrate and rotating the substrate; a cleaning unit including a first cleaning member, a second cleaning member provided around the first cleaning member and a base to which the first and second cleaning members are secured; an elevating unit for moving the substrate holding and rotating unit and the cleaning unit relative to each other so as to allow the first and second cleaning members to come into contact with the rear surface of the substrate held by the substrate holding and rotating unit; and a driving unit for driving the substrate and the cleaning unit relative to each other in a direction along the rear surface of the substrate so as to allow part of the second cleaning member to be exposed to the outside of the substrate.
摘要翻译：基板清洗装置包括用于保持基板的后表面的中心并旋转基板的基板保持和旋转单元; 清洁单元，包括第一清洁构件，设置在第一清洁构件周围的第二清洁构件和固定有第一和第二清洁构件的基座; 升降单元，用于相对于彼此移动所述基板保持旋转单元和所述清洁单元，以使得所述第一和第二清洁构件与由所述基板保持旋转单元保持的所述基板的后表面接触; 以及用于在沿着基板的后表面的方向上相对于彼此驱动基板和清洁单元的驱动单元，以允许第二清洁部件的一部分暴露于基板的外部。

5. 发明申请

US20110127236A1 DEVELOPING DEVICE AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20110127236A1
公开(公告)日：2011-06-02
申请号：US13024939
申请日：2011-02-10
申请人： Taro YAMAMOTO , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Taro YAMAMOTO , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： C23F1/04
CPC分类号： G03F7/3028 , G03F7/3021
摘要： The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
摘要翻译：显影液的温度根据抗蚀剂的种类或抗蚀剂图案而变化。当扫描具有与衬底的有效面积的宽度匹配的长度的狭缝形喷射口的显影剂喷嘴时，施加显影溶液。在将其上涂覆有显影液的基板离开预定时间后，在扫描稀释剂喷嘴的同时供给稀释剂，从而基本上停止显影反应并使溶解的抗蚀剂组分扩散。可以通过控制显影液温度来快速溶解所需量的抗蚀剂，同时可以通过在预定时间内提供稀释剂而使溶解的抗蚀剂组分显示出不利影响之前，可以停止显影，从而获得具有均匀线的图案宽度和提高吞吐量。

6. 发明授权

US06991385B2 Method for developing processing and apparatus for supplying developing solution 失效
公开(公告)号：US06991385B2
公开(公告)日：2006-01-31
申请号：US10943840
申请日：2004-09-20
申请人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： G03D5/00 , G03D5/04
CPC分类号： H01L21/6715 , G03D3/06 , G03F7/3021
摘要： In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

7. 发明授权

US08474396B2 Developing apparatus, resist pattern forming method and storage medium 有权
标题翻译：显影装置，抗蚀剂图案形成方法和存储介质
公开(公告)号：US08474396B2
公开(公告)日：2013-07-02
申请号：US12836137
申请日：2010-07-14
申请人： Masahiro Fukuda , Atsushi Ookouchi , Taro Yamamoto
发明人： Masahiro Fukuda , Atsushi Ookouchi , Taro Yamamoto
IPC分类号： B05B7/16
CPC分类号： H01L21/6715 , G03F7/3021 , H01L21/67173 , H01L21/6719 , H01L21/68771
摘要： Provided is a developing apparatus configured to slim the resist pattern while reducing the number of developing modules. A room temperature developing liquid and a high temperature developing liquid to modify the surface layer of a resist pattern can be supplied from a common nozzle to a substrate disposed on a mount table. Although both developing liquids may be sequentially discharged by switching between the supply line for the room temperature developing liquid and the supply line for the high temperature developing liquid, it is also possible to join these supply lines for supplying the room temperature developing liquid from the former supply line, and then adjust the ratio of the flow rates between both supply lines, and then supply the mixed liquid of the developing liquids as a high temperature developing liquid.
摘要翻译：提供了一种显影装置，其被配置为在减少显影模块的数量的同时使抗蚀剂图案变薄。室温显影液和高温显影液可以从公共喷嘴供给到设置在安装台上的基板上。虽然通过在室温显影液的供给线和高温显影液的供给路之间切换来顺序地排出显影液，但是也可以将这些供给管线从前者供给室温显影液供应线，然后调整两条供应线之间的流量比，然后将显影液体的混合液体作为高温显影液供应。

8. 发明授权

US08026048B2 Developing apparatus and developing method 有权
标题翻译：开发设备和开发方法
公开(公告)号：US08026048B2
公开(公告)日：2011-09-27
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
发明人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
IPC分类号： G03F7/00 , G03F7/26 , G03F7/30 , B05C5/02
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

9. 发明授权

US07896562B2 Developing method, developing apparatus and storage medium 有权
标题翻译：显影方法，显影装置和存储介质
公开(公告)号：US07896562B2
公开(公告)日：2011-03-01
申请号：US12173285
申请日：2008-07-15
申请人： Taro Yamamoto , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
发明人： Taro Yamamoto , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03B27/32 , B05C11/02
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A method of supplying a developing solution is provided. The method includes supplying a developing solution onto a substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part. The method further includes shifting a position of the ribbon-like region in which the developing solution is supplied. Developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force.
摘要翻译：提供了提供显影液的方法。该方法包括从第一显影液喷嘴将显影液供给到基板上，以便在基板表面上形成带状区域，同时通过基板保持部件绕垂直轴线旋转基板。该方法还包括移动其中供应显影液的带状区域的位置。显影溶液由第二显影剂溶液喷嘴提供，以在基材的中心部分上形成圆形区域，或形成比从第一显影剂供应的显影溶液的带状区域的长度短的带状区域喷嘴。同时，基板经由基板保持部围绕垂直轴线旋转，从而通过离心力将显影液向基板的周边部分扩散。

10. 发明申请

US20090035021A1 DEVELOPING METHOD, DEVELOPING APPARATUS AND STORAGE MEDIUM 有权
标题翻译：开发方法，开发设备和存储介质
公开(公告)号：US20090035021A1
公开(公告)日：2009-02-05
申请号：US12173285
申请日：2008-07-15
申请人： Taro YAMAMOTO , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
发明人： Taro YAMAMOTO , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
IPC分类号： G03G15/08
CPC分类号： H01L21/6715 , G03F7/3021
摘要： The present invention provides a method of supplying a developing solution, stably, onto a substrate, upon providing a developing process to the substrate which has been coated with a resist and subjected to an exposure process. In this method, the developing solution is supplied onto the substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part, wherein one end of the ribbon-like region is oriented toward a central portion of the substrate. At this time, by shifting a position of the ribbon-like region in which the developing solution is supplied, a liquid film of the developing solution can be formed on the surface of the substrate. Subsequently, in order to prevent the liquid film of the developing solution from being dried up, the developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force. In this manner, the developing nozzles are selected, corresponding to the process to be performed.
摘要翻译：本发明提供一种向已经涂覆有抗蚀剂并进行曝光处理的基板提供显影处理时将显影液稳定地供给到基板上的方法。在该方法中，将显影液从第一显影液喷嘴供给到基板上，以在基板的表面上形成带状区域，同时经由基板保持部使基板绕垂直轴旋转，其中带状区域的一端朝向基板的中心部分。此时，通过移动供给显影液的带状区域的位置，可以在基板的表面上形成显影液的液膜。接下来，为了防止显影液的液膜干燥，从第二显影液喷嘴供给显影液，以在基板的中心部分形成圆形区域，或形成带状区域的长度比从第一显影喷嘴供给的显影液的带状区域短。同时，基板经由基板保持部围绕垂直轴线旋转，从而通过离心力将显影液向基板的周边部分扩散。以这种方式，根据要执行的处理来选择显影喷嘴。

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