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1. 发明授权

US08455183B2 Resist pattern slimming treatment method 有权
标题翻译：抗皱图案减肥治疗方法
公开(公告)号：US08455183B2
公开(公告)日：2013-06-04
申请号：US12662632
申请日：2010-04-27
申请人： Toyohisa Tsuruda , Yoshihiro Kondo , Atsushi Ookouchi , Masahiro Yamamoto
发明人： Toyohisa Tsuruda , Yoshihiro Kondo , Atsushi Ookouchi , Masahiro Yamamoto
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , H01L21/67155
摘要： A resist pattern slimming treatment method includes: a slimming treatment step of performing a slimming treatment on a resist pattern by applying a solution containing an acid onto a substrate having the resist pattern formed thereon, then performing a heat treatment, and then performing a developing treatment. A database storing kinds of resist material for the resist pattern, concentrations of acid contained in a solution to be applied onto the substrate having the resist pattern formed thereon, and line widths of the resist pattern corresponding to the kinds of resist material and the concentrations of acid is prepared in advance. The concentration of the acid contained in the solution used in the slimming treatment step is based on a concentration of the acid obtained from the database, using, as search keys, the kind of resist material and a target value of the line width of the resist pattern.
摘要翻译：抗蚀剂图案减肥处理方法包括：减肥处理步骤，通过将含有酸的溶液涂布在其上形成有抗蚀剂图案的基材上，然后进行热处理，然后进行显影处理，对抗蚀剂图案进行减肥处理。存储抗蚀剂图案的各种抗蚀剂材料的数据库，涂布在其上形成有抗蚀剂图案的基板上的溶液中所含的酸的浓度，以及与抗蚀剂材料的种类对应的抗蚀剂图案的线宽度预先准备酸。在减肥处理步骤中使用的溶液中所含的酸的浓度基于从数据库中获得的酸的浓度，使用作为搜索关键字的抗蚀剂材料的种类和抗蚀剂的线宽度的目标值模式。

2. 发明申请

US20100291491A1 Resist pattern slimming treatment method 审中-公开
标题翻译：抗皱图案减肥治疗方法
公开(公告)号：US20100291491A1
公开(公告)日：2010-11-18
申请号：US12662343
申请日：2010-04-13
申请人： Masahiro Yamamoto , Yoshihiro Kondo , Atsushi Ookouchi , Toyohisa Tsuruda
发明人： Masahiro Yamamoto , Yoshihiro Kondo , Atsushi Ookouchi , Toyohisa Tsuruda
IPC分类号： G03F7/38
CPC分类号： G03F7/38 , H01L21/0273
摘要： A resist pattern slimming treatment method of performing a slimming treatment on a resist pattern formed on a substrate includes: a slimming treatment step of performing a slimming treatment on the resist pattern by applying a reactant solubilizing the resist pattern onto the resist pattern, then performing a heat treatment on the resist pattern under a heat treatment condition determined in advance, and then performing a developing treatment on the resist pattern; and a first line width measurement step of measuring a line width of the resist pattern before the slimming treatment step. The heat treatment condition is determined based on a measurement value of the line width measured in the first line width measurement step.
摘要翻译：对形成在基板上的抗蚀剂图案进行减肥处理的抗蚀剂图案减肥处理方法包括：减肥处理步骤，通过将抗蚀剂图案溶解在抗蚀剂图案上来进行抗蚀剂图案的减肥处理，然后进行在预先确定的热处理条件下对抗蚀剂图案进行热处理，然后对抗蚀剂图案进行显影处理; 以及第一线宽测量步骤，用于在减肥处理步骤之前测量抗蚀剂图案的线宽。基于在第一线宽测量步骤中测量的线宽的测量值来确定热处理条件。

3. 发明申请

US20100291490A1 Resist pattern slimming treatment method 有权
标题翻译：抗皱图案减肥治疗方法
公开(公告)号：US20100291490A1
公开(公告)日：2010-11-18
申请号：US12662632
申请日：2010-04-27
申请人： Toyohisa Tsuruda , Yoshihiro Kondo , Atsushi Ookouchi , Masahiro Yamamoto
发明人： Toyohisa Tsuruda , Yoshihiro Kondo , Atsushi Ookouchi , Masahiro Yamamoto
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/67155
摘要： A resist pattern slimming treatment method includes: a slimming treatment step of performing a slimming treatment on a resist pattern by applying a solution containing an acid onto a substrate having the resist pattern formed thereon, then performing a heat treatment, and then performing a developing treatment. A database storing kinds of resist material for the resist pattern, concentrations of acid contained in a solution to be applied onto the substrate having the resist pattern formed thereon, and line widths of the resist pattern corresponding to the kinds of resist material and the concentrations of acid is prepared in advance. The concentration of the acid contained in the solution used in the slimming treatment step is based on a concentration of the acid obtained from the database, using, as search keys, the kind of resist material and a target value of the line width of the resist pattern.
摘要翻译：抗蚀剂图案减肥处理方法包括：减肥处理步骤，通过将含有酸的溶液涂布在其上形成有抗蚀剂图案的基材上，然后进行热处理，然后进行显影处理，对抗蚀剂图案进行减肥处理。存储抗蚀剂图案的各种抗蚀剂材料的数据库，涂布在其上形成有抗蚀剂图案的基板上的溶液中所含的酸的浓度，以及与抗蚀剂材料的种类对应的抗蚀剂图案的线宽度预先准备酸。在减肥处理步骤中使用的溶液中所含的酸的浓度基于从数据库中获得的酸的浓度，使用作为搜索关键字的抗蚀剂材料的种类和抗蚀剂的线宽度的目标值模式。

4. 发明授权

US08992687B2 Substrate processing apparatus, method for processing substrate, and storage medium 有权
标题翻译：基板处理装置，基板处理方法和存储介质
公开(公告)号：US08992687B2
公开(公告)日：2015-03-31
申请号：US13218983
申请日：2011-08-26
申请人： Hiroyuki Kudoh , Hideto Mori , Shinji Okada , Toyohisa Tsuruda
发明人： Hiroyuki Kudoh , Hideto Mori , Shinji Okada , Toyohisa Tsuruda
IPC分类号： C23C16/455 , C23C16/52 , C23C16/458 , H01L21/67
CPC分类号： H01L21/67017
摘要： Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.
摘要翻译：处理气体从处理室的中央上部供应到安装板上的晶片，同时处理室从在晶片外部的区域处理气体排出通道排出。此外，净化气体从吹扫气体供给通道供应到形成在容器主体的周边部分与盖体的周边部分之间的缓冲室。处理气体的供给流量比处理气体排出通道中的排气流量低。因此，缓冲室中的净化气体由于流体之间的差异而由于处理室内部的负压而经由由容器主体和盖体之间的间隙形成的吹扫气体供给孔而被吸入处理室价格。

5. 发明申请

US20110308464A1 SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理装置，处理基板的方法和存储介质
公开(公告)号：US20110308464A1
公开(公告)日：2011-12-22
申请号：US13218983
申请日：2011-08-26
申请人： Hiroyuki KUDOH , Hideto Mori , Shinji Okada , Toyohisa Tsuruda
发明人： Hiroyuki KUDOH , Hideto Mori , Shinji Okada , Toyohisa Tsuruda
IPC分类号： C23C16/455 , C23C16/52 , C23C16/458
CPC分类号： H01L21/67017
摘要： Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.
摘要翻译：处理气体从处理室的中央上部供应到安装板上的晶片，同时处理室从在晶片外部的区域处理气体排出通道排出。此外，净化气体从吹扫气体供给通道供应到形成在容器主体的周边部分与盖体的周边部分之间的缓冲室。处理气体的供给流量比处理气体排出通道中的排气流量低。因此，缓冲室中的净化气体由于流体之间的差异而由于处理室内部的负压而经由由容器主体和盖体之间的间隙形成的吹扫气体供给孔而被吸入处理室价格。

6. 发明申请

US20090029046A1 SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理装置，处理基板的方法和存储介质
公开(公告)号：US20090029046A1
公开(公告)日：2009-01-29
申请号：US12163163
申请日：2008-06-27
申请人： Hiroyuki Kudoh , Hideto Mori , Shinji Okada , Toyohisa Tsuruda
发明人： Hiroyuki Kudoh , Hideto Mori , Shinji Okada , Toyohisa Tsuruda
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： H01L21/67017
摘要： Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part or a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.
摘要翻译：处理气体从处理室的中央上部供应到安装板上的晶片，同时处理室从在晶片外部的区域处理气体排出通道排出。此外，净化气体从净化气体供给通道供给到形成在周边部分或容器主体与盖体之间的缓冲室。处理气体的供给流量比处理气体排出通道中的排气流量低。因此，缓冲室中的净化气体由于流体之间的差异而由于处理室内部的负压而经由由容器主体和盖体之间的间隙形成的吹扫气体供给孔而被吸入处理室价格。

7. 发明授权

US08801891B2 Substrate warpage removal apparatus and substrate processing apparatus 有权
标题翻译：基板翘曲去除装置和基板处理装置
公开(公告)号：US08801891B2
公开(公告)日：2014-08-12
申请号：US13479673
申请日：2012-05-24
申请人： Toyohisa Tsuruda
发明人： Toyohisa Tsuruda
IPC分类号： B32B38/10 , G03F7/20 , B44C1/22
CPC分类号： B32B38/10 , B32B41/00 , B32B2457/20 , H01L21/67288 , H01L21/68735 , H01L21/6875 , Y10T156/1105 , Y10T156/1906
摘要： There is provided a substrate warpage removal apparatus and method which can remove warpage of a substrate which has a patterned surface having a film with a pattern, and a non-patterned surface having a film without a pattern. The substrate warpage removal apparatus includes: a holding plate configured to hold a substrate; a processing liquid supply pipe, provided on the side of the non-patterned surface of the substrate, configured to supply an etching liquid to the surface to remove a surface film; and a first laser displacement meter and a second laser displacement meter configured to detect warpage of the substrate. When the controller, based on signals from the first laser displacement meter and the second laser displacement meter, determines that warpage of the substrate has been eliminated, the controller stops the supply of an etching liquid from the processing liquid supply pipe.
摘要翻译：提供了一种基板翘曲去除装置和方法，其可以消除具有带图案的膜的图案化表面的基板和具有无图案的膜的非图案化表面的翘曲。基板翘曲去除装置包括：保持板，其构造成保持基板; 设置在所述基板的非图案化表面侧的处理液供给管，被配置为向所述表面供给蚀刻液以除去表面膜; 以及配置成检测所述基板的翘曲的第一激光位移计和第二激光位移计。当控制器基于来自第一激光位移计和第二激光位移计的信号确定基板的翘曲已被消除时，控制器停止从处理液体供给管供应蚀刻液。

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